JP2021044471A - 保持板および基板の研磨方法 - Google Patents
保持板および基板の研磨方法 Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/04—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor involving a rotary work-table
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Abstract
Description
図1(a)は第1の実施形態にかかる保持板及び保持板に接着された基板のA−A線に沿った模式断面図、図1(b)はその模式斜視図、である。
図1(a)に表すように、保持板10には、接着剤40などを用いて研磨したい基板20が接着される。基板20は、サファイヤ、ダイアモンド、SiC、GaN、BN、Si、Geなどとされ、基板20上に、半導体結晶層が形成される。Siの場合、ウェーハサイズは2〜4インチなどとされ、その厚さT1は、たとえば、150〜300μmなどとされる。
図1(a)、(b)に表すように、保持板10の多孔質無機材料層の第1の面10aと、基板20の平坦面20aと、が平行になるように接着剤40を用いて接着する(S200)。接着剤40は、塗布後の平坦性が良好な有機系材料(たとえば、アクリルなど)とするとよい。平坦面20aは、素子が設けられる半導体エピタキシャル結晶層の表面を構成する。(表1)に表したように貫通孔の平均径はμmのオーダーと微細なので、多孔質無機材料層の内部へ接着剤40が入り込むことが抑制され、基板20を保持するための接着強度を保つことができる。
基板20の平坦面20aとは反対の側の裏面20bは研磨装置(図示せず)の研磨面に載置される。基板20の裏面は、研磨装置内での回転により研磨が進行し、図3(a)の例示するように、所定の厚さT2まで薄層化する。所定の厚さT2は、たとえば、50〜100μmなどと薄くされる(S202)。
また、図5(a)は剥離後の基板と保持板の模式断面図、図5(b)はその模式斜視図、である。
有機物質を含む剥離剤50を、液相状態または気相状態で貫通孔を通すことにより接着剤20と反応させて、研磨後の基板20を保持板10から剥離させる(S204)。貫通孔はウェーハ全面に分散している。このため、剥離剤50はウェーハ全面にほぼ均等に供給され、図5(a)、(b)に表すように、接着剤40はウェーハ全面でほぼ均一に剥離される。なお、剥離剤50は、接着剤40を溶解可能な、たとえば、アセトン、トルエン、ベンゼンなどとすることができる。
比較例の保持板(サポートプレート)は、ガラスやセラミックなどの材料からなる。サポートプレートには、上下を貫通するように複数の貫通孔が設けられる。ウェーハとサポートプレートとは接着剤で固定される。ウェーハが接着剤で密着されていない面の貫通孔の開口部がテープを介して真空吸着されてウェーハの研削/研磨が行われる。
保持板13は、多孔質無機材料層11と、多孔質無機材料層11の第2の面11bに隣接する補強層12と、を有する。多孔質無機材料層11の側面11cには、貫通孔の一部が露出する。多孔質無機材料層11が十分の厚さに成形できないなどにより多孔質無機材料層11だけでは、研磨プロセスに耐える強度が得られない場合がある。補強層12を透明にすると剥離の進行状況などを確認できる。このため、たとえば、石英基板、両面ミラー処理されたSiC単結晶基板、サファイヤ基板などとすることができる。
Claims (7)
- 研磨される基板が接着される保持板であって、
貫通孔と細孔とを含む2段階孔構造を有する多孔質無機材料層を備え、
前記多孔質無機材料層は、前記基板の平坦面の側と接着される第1の面を有し、
前記細孔の平均径は前記貫通孔の平均径よりも小さい、保持板。 - 前記貫通孔の前記平均径は、0.5μm以上かつ20μm以下である請求項1記載の保持板。
- 前記多孔質無機材料層は疎水性を有する請求項1または2に記載の保持板。
- 前記多孔質無機材料層は、SiO2、Al2O3、SiC、TiNのいずれかを含む、請求項1〜3のいずれか1つに記載の保持板。
- 前記保持板は、前記多孔質無機材料層のうち前記第1の面とは反対の側の第2の面に隣接する補強層をさらに備え、
前記多孔質無機材料層の側面には、前記貫通孔の一部が露出する、請求項1〜4のいずれか1つに記載の保持板。 - 請求項1〜5のいずれか1つに記載の保持板の前記多孔質無機材料層の前記第1の面と、前記基板の前記平坦面と、が平行になるように接着剤を用いて接着し、
前記基板の前記平坦面とは反対の側の面を研磨装置を用いて所定の厚さに薄層化し、
有機物質を含む剥離剤を、液相状態または気相状態で前記貫通孔を通して前記接着剤と反応させて、前記基板を前記保持板から剥離させる、基板の研磨方法。 - 前記基板は、サファイヤ、ダイアモンド、SiC、GaN、BN、Si、Geのうちのいずれかを含む請求項6記載の基板の研磨方法。
Priority Applications (2)
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JP2019166908A JP7189106B2 (ja) | 2019-09-13 | 2019-09-13 | 保持板および基板の研磨方法 |
US16/803,058 US20210078131A1 (en) | 2019-09-13 | 2020-02-27 | Holding plate and polishing method of substrate |
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JP2019166908A JP7189106B2 (ja) | 2019-09-13 | 2019-09-13 | 保持板および基板の研磨方法 |
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JP2021044471A true JP2021044471A (ja) | 2021-03-18 |
JP7189106B2 JP7189106B2 (ja) | 2022-12-13 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06265534A (ja) * | 1993-01-18 | 1994-09-22 | Naohiro Soga | 無機系多孔質カラム |
JP2000182997A (ja) * | 1998-12-15 | 2000-06-30 | Nec Corp | 半導体装置の製造方法 |
JP2004202684A (ja) * | 2002-12-20 | 2004-07-22 | Infineon Technologies Ag | 加工品の処理方法および加工品キャリア |
JP2016004975A (ja) * | 2014-06-19 | 2016-01-12 | 富士通株式会社 | 積層回路基板の製造方法 |
JP2018142631A (ja) * | 2017-02-28 | 2018-09-13 | 日化精工株式会社 | ウェーハの仮止め用サポート基板及びウェーハの仮止め処理方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7883991B1 (en) * | 2010-02-18 | 2011-02-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Temporary carrier bonding and detaching processes |
KR20160013461A (ko) * | 2014-07-25 | 2016-02-04 | 삼성전자주식회사 | 캐리어 헤드 및 화학적 기계식 연마 장치 |
-
2019
- 2019-09-13 JP JP2019166908A patent/JP7189106B2/ja active Active
-
2020
- 2020-02-27 US US16/803,058 patent/US20210078131A1/en not_active Abandoned
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06265534A (ja) * | 1993-01-18 | 1994-09-22 | Naohiro Soga | 無機系多孔質カラム |
JP2000182997A (ja) * | 1998-12-15 | 2000-06-30 | Nec Corp | 半導体装置の製造方法 |
JP2004202684A (ja) * | 2002-12-20 | 2004-07-22 | Infineon Technologies Ag | 加工品の処理方法および加工品キャリア |
JP2016004975A (ja) * | 2014-06-19 | 2016-01-12 | 富士通株式会社 | 積層回路基板の製造方法 |
JP2018142631A (ja) * | 2017-02-28 | 2018-09-13 | 日化精工株式会社 | ウェーハの仮止め用サポート基板及びウェーハの仮止め処理方法 |
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JP7189106B2 (ja) | 2022-12-13 |
US20210078131A1 (en) | 2021-03-18 |
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