TWI514441B - A substrate substrate, a composite substrate for a semiconductor, a semiconductor circuit substrate, and a method of manufacturing the same - Google Patents

A substrate substrate, a composite substrate for a semiconductor, a semiconductor circuit substrate, and a method of manufacturing the same Download PDF

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Publication number
TWI514441B
TWI514441B TW103144719A TW103144719A TWI514441B TW I514441 B TWI514441 B TW I514441B TW 103144719 A TW103144719 A TW 103144719A TW 103144719 A TW103144719 A TW 103144719A TW I514441 B TWI514441 B TW I514441B
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Taiwan
Prior art keywords
substrate
semiconductor
alumina
composite
curable resin
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TW103144719A
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English (en)
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TW201537617A (zh
Inventor
Sugio Miyazawa
Yasunori Iwasaki
Tatsuro Takagaki
Akiyoshi Ide
Hirokazu Nakanishi
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Ngk Insulators Ltd
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Publication of TW201537617A publication Critical patent/TW201537617A/zh
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Publication of TWI514441B publication Critical patent/TWI514441B/zh

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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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    • C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
    • C01F7/00—Compounds of aluminium
    • C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
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Description

襯底基板、半導體用複合基板、半導體電路基板以及其製造方法
本發明係關於襯底基板、半導體用複合基板、半導體電路基板以及其製造方法。
以往，已知有將被稱為石英上覆矽(Silicon on Quartz(SOQ))、玻璃上覆矽(Silicon on Glass(SOG))、藍寶石上覆矽(Silicon on Sapphire(SOS))之襯底基板貼合於透明．絕緣基板所構成之SOI或藉由將GaN、ZnO、鑽石、AlN等之透明寬能隙半導體接合於矽等之施子基板所得到之貼合晶圓。SOQ、SOG、SOS等，從襯底基板之絕緣性‧透明性等，被期待對於投影機、高頻元件等之應用。又，將寬能隙之薄膜與襯底基板複合化之貼合晶圓，被期待對於高性能雷射或功率元件等之應用。
如此之半導體用之複合基板，係由襯底基板與施子基板所形成，一般而言襯底基板或施子基板係由單結晶材料所形成。以往，係以在基底基板上藉由磊晶成長來形成矽層之方法為主流，但近年藉由直接接合而形成之方法被開發，對於半導體元件之性能改善有所貢獻(專利文獻1、2、3)。亦即，如此之襯底基板與施子基板，係介在接合層或接著層而接合， 或是直接接合。
然而，由於藍寶石價格昂貴，為了節省成本，以使用藍寶石以外的材料之基板做為襯底基板為佳。伴隨著上述接合技術的進步，各種石英、玻璃、氧化鋁等藍寶石以外的材質所形成之襯底基板也被提案(專利文獻4、5、6、7)。
如此之半導體元件，隨著所搭載之機器的高性能化或小型化，低背化變得必須，藉由研削、研磨、蝕刻等將由貼合而形成之複合基板之構成了半導體元件側的主面(電路側之主面)之反對側的主面(對向面)，來薄型化。若複合基板之厚度變薄，則容易發生基板的彎曲，對於操作會造成影響。因此，已知藉由在複合基板之電路側之主面接著另一個體的支持基板，而使操作變得可能之方法(專利文獻8)。
【先前技術文獻】 【專利文獻】
專利文獻1：日本專利特開平08-512432號公報
專利文獻2：日本專利特開2003-224042號公報
專利文獻3：日本專利特開2010-278341號公報
專利文獻4：WO2010/128666 A1
專利文獻5：日本專利特開平05-160240號公報
專利文獻6：日本專利特開平05-160240號公報
專利文獻7：日本專利特開2008-288556號公報
專利文獻8：日本專利特開2005-191550號公報
專利文獻9：PCT/JP2013/069284
專利文獻10：日本專利特開2010-258341號公報
在複合基板之電路側之主面接著另一個體的支持基板時，考慮到之後會將複合基板從支持基板剝離，因此具有：藉由紫外線硬化而失去黏著性之物、藉由熱固化而失去黏著性之物、或是可溶解於特定的溶劑之特徵的接著劑被提案。然而，若考慮到由於熱或溶劑對於元件所造成之損傷，紫外線硬化接著劑，不會由於熱或溶劑造成損傷而可將支持基板剝離，因此較佳。
藉由在複合基板與另一個體之支持基板之間使紫外線硬化型樹脂介在之狀態，對於紫外線熱硬化型樹脂照射紫外線時，應可將紫外線從支持基板側照射，也可從複合基板側照射。
然而，從支持基板側照射紫外線的情況，支持基板的材質必須是透過紫外線的材料。對於支持基板，根據接著後之反面加工製程，機械強度、耐藥品性、與所接著之基板之熱膨脹匹配性等之特性是必須的，若對於紫外線之透過性也變得需要的情況，則材質的選擇範圍變窄，從生產性的觀點來看不佳。從此觀點來看，可以說從複合基板側照射紫外線為佳。
然而，根據本發明者之檢討，若對於複合基板以紫外線硬化型樹脂接著支持基板，從襯底基板側照射紫外線而使樹脂硬化，之後將複合基板從支持基板剝離時，會產生複合基板之破裂或剝離不良，而有良率低下的情況。
本發明之課題，為在從襯底基板側照射紫外線使紫外線硬化型樹脂硬化，接著使複合基板從支持基板剝離時，抑制複合基板的破裂或剝離不良。
本發明，係一種半導體用複合基板之襯底基板，其特徵在於：前述襯底基板係由多結晶透光性氧化鋁所形成，多結晶透光性氧化鋁之氧化鋁純度為99.9%以上，多結晶透光性氧化鋁之在200~400nm的波長範圍內之前方全光線透過率之平均值為60%以上，多結晶透光性氧化鋁之在200~400nm的波長範圍內之直線透過率之平均值為15%以下。
又，本發明，係關於具有襯底基板、以及對於襯底基板之接合面接合之施子基板為特徵之半導體用複合基板。
又，本發明，係關於具有前述半導體用複合基板以及設置在前述施子基板上之電路為特徵之半導體電路基板。
又，本發明，係製造襯底基板、對於襯底基板之接合面接合之施子基板、以及設置在施子基板上之具有電路之半導體電路基板之方法，其特徵在於：係為了得到由多結晶透光性氧化鋁所形成之具有接合面與對向面之基材，對於此基材之接合面接合之施子基板，以及設置在前述施子基板上之電路之零件的工程，前述多結晶透光性氧化鋁之氧化鋁純度為99.9%以上，前述多結晶透光性氧化鋁之在200~400nm的波長範圍內之前方全光線透過率之平均值為60%以上，前述多結晶透光性氧化鋁之在200~400nm的波長範圍內之直線透過率之平均值為15%以下之工程；由前述對向面側將前述基材加工， 藉由使前述基材的厚度變小而形成前述襯底基板之工程；以及在使前述施子基板與支持基板之間介在紫外線硬化型樹脂之狀態下，藉由從前述襯底基板側往前述紫外線硬化型樹脂照射200~400nm之波長範圍之紫外線而使前述紫外線硬化型樹脂硬化。
根據本發明，從襯底基板側照射紫外線使紫外線硬化型樹脂硬化，接著使複合基板從支持基板剝離時，可抑制複合基板之破裂或剝離不良。
1‧‧‧零件
1A‧‧‧零件
2‧‧‧基板
2A‧‧‧襯底基板
2a‧‧‧接合面
2b‧‧‧對向面
2c‧‧‧薄板化加工後之對向面
3‧‧‧施子基板
4‧‧‧電路
5‧‧‧紫外線硬化型樹脂
6‧‧‧支持基板
7B‧‧‧複合基板
9‧‧‧切割溝
10‧‧‧半導體電路基板
16‧‧‧間隙
17‧‧‧陰影領域
41‧‧‧積分球
42‧‧‧薄板
44‧‧‧光通過孔
46‧‧‧光源
第1圖(a)係表示襯底基板之基材2、施子基板3、紫外線硬化型樹脂5及支持基板6所形成之零件1之模式圖，第1圖(b)係表示使第1圖(a)之基材2變薄之狀態之模式圖。
第2圖(a)係表示對於第1圖(b)之部品形成切割溝9之狀態之模式圖，第2圖(b)係表示切斷後之半導體電路基板10。
第3圖(a)係表示在本發明中之紫外線的照射狀態之模式圖，第3圖(b)係表示在比較例中之紫外線之照射狀態之模式圖。
第4圖係為了說明前方全光線透過率之測定法之模式圖。
第5圖係為了說明直線透過率之測定法之模式圖。
第6圖係為了說明結晶粒徑之測定方法之模式圖。
以下，一邊適當參照圖式，而更詳細說明本發明。 如第1圖(a)所示，準備由多結晶透光性氧化鋁所形成之基材2。基材2之一對的主面之中，一方為接合面2a，另一方為對向面2b。對於基材2之接合面2a接合施子基板3，在施子基板3上形成電路4。接著，藉由使施子基板3與另一個體之支持基板6之間介在紫外線硬化型樹脂5，使兩者黏著，製作零件1。
接著，如第1圖(b)所示，將基材2加工使其薄板化，得到襯底基板2A。藉由此而可製作照射前之零件1A。又，在第1圖(b)中，虛線的領域8，係表示從基材2除去之領域，2c係表示薄板化加工後之對向面。
接著，如第2圖(a)所示，在零件1A上形成切割溝9，將大尺寸之複合基板7A分割成多數的複合基板7B。在此，切割溝9，係將複合基板7B分離，但以更分割至紫外線硬化性樹脂5為佳。
接著，如第3圖(a)所示，從襯底基板2A之對象面2c側，如箭號A所示照射紫外線。紫外線，係透過襯底基板2A，施子基板3，照射於紫外線硬化型樹脂5，而使樹脂5硬化。
在此，在以往，係如第3圖(b)所示，透過襯底基板12之紫外線，係如箭號B所示直接經過電路4之間隙16，而使紫外線硬化型樹脂5硬化。另一方面，對於電路如箭號A所示射入之紫外線無法透過電路，而在電路的上方產生陰影領域17。此結果，在領域17，紫外線硬化型樹脂之硬化不會進行，而仍然維持著黏著性，另一方面，在間隙16上的領域， 樹脂之硬化進行，喪失黏著性。若在此狀態將複合基板從支持基板剝離，間隙16上之領域可簡單得剝離，但在陰影領域17黏著性殘留，因此剝離時之應力不會均等地施加於複合基板。此結果，使複合基板從支持基板剝離時，被認為容易發生複合基板之破裂或剝離不良。
相對於此，在本發明，藉由使構成襯底基板之多結晶透光性氧化鋁之在200~400nm的波長範圍內之前方全光線透過率之平均值在60%以上，可有效率地如箭號B所示一邊將紫外線對於樹脂5照射，同時藉由使其直線透過率低至15%以下，而可如箭號C所示使紫外線散射於襯底基板內。由於施子基板3很薄，因此在襯底基板散射之紫外線，也有效率地照射於電路4之上方，而不容易產生陰影。此結果，紫外線照射後之樹脂5均等地硬化，因此使複合基板從支持基板剝離時，複合基板之破裂或剝離不良被抑制。
以下，對於本發明之各構成要素更詳細敘述。
(半導體用複合基板)
本發明之複合基板，可利用於投影機用發光元件、高頻元件、高性能雷射、功率元件、邏輯IC等。
(施子基板)
複合基板，係含有本發明之襯底基板與施子基板。
施子基板的材質，雖沒有特別限定，但以從矽、氮化鋁、氮化鎵、氧化鋅及鑽石所形成之群選擇為佳。施子基板之厚度，並沒有特別限定，但在通常之SEMI/JEITA規格附近者從操作性的關係來看容易使用。
施子基板，係具有上述材質，也可在表面具有氧化膜。這是由於若透過氧化膜進行離子植入，則可得到植入離子之通道效應之效果之故。氧化膜，以具有50~500nm之厚度為佳。具有氧化膜之施子基板也包含在施子基板中，若沒有特別區別，則稱為施子基板。
(襯底基板)
襯底基板之厚度，雖沒有特別限定，但在通常之SEMI/JEITA規格附近者從操作性的關係來看容易使用。具體而言，襯底基板之厚度，較佳的情況為，在直徑為100mm之晶圓的情況為525μm，直徑150mm之情況為625μm，直徑200mm之情況為725μm，直徑300mm之情況為775μm。又，也可在襯底基板設置空腔。
襯底基板之材質，為上述之多結晶透光性氧化鋁，多結晶透光性氧化鋁之在200~400nm的波長範圍內之前方全光線透過率之平均值為60%以上。藉由此可使對於紫外線硬化型樹脂之照射光亮增大。從此觀點來看，多結晶透光性氧化鋁之在200~400nm的波長範圍內之前方全光線透過率之平均值在65%以上更佳。
又，構成基板之多結晶透光性氧化鋁之在200~400nm的波長範圍內之直線透過率之平均值為15%以下。藉由此，透過襯底基板之光散射而可使紫外線硬化型樹脂之硬化均一。從此觀點來看，前述多結晶透光性氧化鋁之在200~400nm的波長範圍內之直線透過率之平均值在10%以下更佳。
前述前方全光線透過率，係基於藉由第4圖之測定裝置40而得到之測定值而算出。第4圖之測定裝置，係以試料S(厚度1mm)將積分球41之開口部塞住，將具有孔44(直徑φ3mm)之薄板42載置於試料S的上面，在該狀態將從光源46的光通過孔44而對試料S照射，使用積分球41而收集通過試料S之光，藉由檢出器48來測定該光的強度。前方全光線透過率，係藉由以下式求得。
前方全光線透過率=100×(所測定之光的強度)/(光源的強度)
前述直線透過率係如以下而求得之值。
基本上係同於前方全光線透過率而測定。但是，如第5圖所示，將試料S與積分球41之距離隔開約80mm，積分球41之開口部的尺寸為φ10mm，收集從試料S在直線方向通過開口部之光，測定該光強度。
又，在本說明書中之紫外線，係意味著波長200以上、400nm以下之光線。
前述多結晶透光性氧化鋁之氧化鋁純度為99.9%以上。
又，前述多結晶透光性氧化鋁之相對密度，從對於半導體之後處理之耐久性及防止汙染的觀點來看，以98%以上為佳，更以99%以上為佳。
前述多結晶透光性氧化鋁之平均結晶粒徑為5~60μm為佳，藉由此，容易確保接合面之平滑性。從此觀點來看，前述多結晶透光性氧化鋁之平均結晶粒徑以在10~50μm 更佳。
又，結晶粒子之平均粒徑係如以下所測定。
(1)將燒結體之剖面鏡面研磨，熱蝕刻使粒界凸顯之後，以顯微鏡照片(100~200倍)攝影，計數單位長度之直線橫越之粒子數。對於3處不同的地方實施。又，單位長度為500μm~1000μm之範圍。
(2)取所實施之3處的粒子個數之平均。
(3)藉由下式，算出平均粒徑。
[算出式] D=(4/π)×(L/n)
[D：平均粒徑、L：直線的單位長度、n：3處粒子個數的平均]
平均粒徑之算出例係如第6圖所示。在不同的3處位置，單位長度(例如500μm)之直線分別橫越之粒子個數為22、23、19時，平均粒徑，藉由上述算出式，成為D=(4/π)×(500/{(22+23+19)/3})=29.9μm。
襯底基板之成形方法並沒有特別限定，可為刮刀法、擠壓法、凝膠鑄法等任意的方法。特別以使用刮刀法來製造基板為佳。在較佳的實施形態中，將含有陶瓷粉末、分散溶劑及結合劑之懸浮液藉由刮刀法而成形成帶狀，將此帶狀物切出既定形狀後，重疊複數片藉由使其加壓層積而得到成形體，將此成形體燒結。
對於較佳情況純度為99.9%以上(或是以99.95%以上更佳)之高純度氧化鋁粉末，添加100ppm以上，300ppm以 下之氧化鎂粉末。做為如此之高純度氧化鋁粉末，可舉例大明化學工業股份公司製之高純度氧化鋁粉體。又，此氧化鎂粉末之純度以在99.9%以上為佳，平均粒徑在0.3μm以下為佳。
原料粉末之平均粒徑(一次粒子徑)雖沒有特別限定，但從在低溫燒結之緻密化的觀點來看，以在0.6μm以下為佳，0.4μm以下更佳，更佳的情況為，原料粉末之平均粒子徑在0.3μm以下。此平均粒徑之下限並沒有特別限定。原料粉末之平均粒子徑，可藉由SEM(掃描式電子顯微鏡)之原料粉末之直接觀察來決定。
又，在此所說的平均粒徑係在SEM照片(倍率：×30000。任意的2個視野)上，除了2次凝集粒子之1次粒子的(最長軸長+最短軸長)/2的值之n=500之平均值。
刮刀法，可舉例以下的方法。
(1)將陶瓷粉體，與成為結合劑之聚乙烯醛縮丁醇樹脂(PVB樹脂)，或是丙烯酸樹脂，與可塑劑、分散劑一起分散於分散溶劑中調製，以刮刀法，成形成帶狀後，使分散溶劑乾燥而使懸浮液固化。
(2)將所得到之帶狀物重疊複數片，藉由加壓層積或CIP層積而得到所希望之厚度的基板形狀之成形體。
為得到本發明之襯底基板，燒結溫度，從燒結體之緻密化的觀點來看，以1700~1900℃為佳，1750~1850℃更佳。更以使在1400~1600℃之升溫速度為50~150℃/hr為佳。
又，燒成時使充分緻密的燒結體生成後，更藉由追加在燒成溫度實施退火處理而達成。此退火溫度，從一邊防 止變形或異常粒成長發生，且促進鎂的排出之觀點來看，以在燒成時之最高溫度±100℃以內為佳，最高溫度在1900℃以下更佳。又，退火時間，以1~6小時為佳。
更且，退火溫度在燒成時之最高溫度+0~100℃之範圍更佳。
如上述，進行成形、燒結，而得到由氧化鋁燒結體所形成之胚料基板。
藉由精密研磨加工胚料基板，而可使各結晶粒子之表面的微觀的中心線平均表面粗度Ra變小。做為如此之研磨加工，以CMP(化學機械拋光)加工為一般。做為在此所使用之研磨懸浮液，係使用在鹼性或中性的溶液中使具有30nm~200nm之粒徑的研磨粒分散之物。做為研磨粒材質，可舉例二氧化矽、氧化鋁、鑽石、氧化鋯、氧化鈰。這些可單獨或組合使用。又，研磨墊，可使用硬質聚氨酯墊、不織布墊、絨面墊。
又，最終的精密研磨加工實施前之粗研磨加工實施後進行退火處理為佳。退火處理之氣氛氣體可舉例大氣、氫、氮、氬、真空。退火溫度以在1200~1600℃，退火時間以2~12小時為佳。藉由此，不僅不會有損表面的平滑，且可促進鎂的排出。
在較佳的實施形態，襯底基板之表面的微觀的中心線平均表面粗度Ra為5nm以下。若較此大，則由於分子間力，可使施子基板之接合強度減低。此在3nm以下更佳，在1nm以下最佳。又，這是對在表面顯現之各結晶粒子之露出面 藉由原子力電子顯微鏡攝影，根據JIS B0601所算出之數值。
在微觀地觀察各結晶粒表面之面粗度若之情況，係使用藉由AFM(Atomic Force Microscope原子力顯微鏡)在10μm視野範圍之表面形狀觀察。
(接合形態)
做為襯底基板與施子基板之接合所使用之技術，並沒有特別限定，可使用例如藉由表面活性化之直接接合，或使用接著層之基板接合技術。
關於直接接合，藉由界面活性化之低溫接合技術被喜好使用。在10-6 Pa程度之真空狀態，藉由Ar氣體而實施表面活性化後，在常溫可使Si等之單結晶材料介在SiO2 等之接著層而與多結晶材料接合。
做為接著層之例，除了藉由樹脂接著以外，用SiO2 、Al2 O3 、SiN也被使用。
(電路)
施子基板上之電路，可藉由通常之光微影法等而形成。又，電路，除了貴金屬地細線以外，也含有焊料凸塊或印刷電極等之各種電子元件。
(支持基板)
支持基板6之材質可為矽、玻璃、石英、或是氧化鋁、SiC、氧化鋯、氮化鋁等各種陶瓷，從平滑加工的容易度、熱膨脹匹配、成本的觀點來看，以矽、玻璃為佳。
又，在支持基板，也可在厚度方向設置多數的貫通孔。藉由此，紫外線硬化型樹脂地一部分進入灌通孔，不僅 接合變得強固，且在剝離時可從貫通孔供給剝離液。
(紫外線硬化型樹脂)
做為紫外線硬化型樹脂，具體而言，可舉出含有(i)丙烯系黏著劑、飽和共聚酯等之黏著劑(高分子彈性體)，(ii)紫外線硬化性成分，(iii)光聚合開始劑，以及根據必要，交聯劑、增黏劑、可塑劑、充填劑、老化防止劑、著色劑等之慣用的添加劑之組成物。
前述(i)黏著劑中，做為丙烯酸系黏著劑，通常，使用(甲基)丙烯酸酯之單獨聚合體或與共聚合性共聚單體之共聚合物。做為構成這些聚合物之單體或共聚單體，例如，可舉出(甲基)丙烯酸之烷基酯(例如，甲酯、乙酯、丁酯、2-乙基己基酯、辛酯等)、(甲基)丙烯酸之羥烷基酯(例如，羥乙基酯、羥丙基酯等)、(甲基)丙烯酸縮水甘油酯、(甲基)丙烯酸、衣康酸、馬來酸酐、(甲基)丙烯酸酰胺、(甲基)丙烯酸N-羥甲基酰胺、(甲基)丙烯酸烷基氨基烷基酯(例如，二甲氨基乙酯、叔丁基氨基乙酯等)、醋酸乙烯酯、苯乙烯、丙烯腈等。做為主要的單體，通常使用均聚物之玻璃轉換溫度在-50℃以下之丙烯酸烷基酯。
做為前述飽和聚酯，可舉出多元醇與2種以上之多元羧酸之飽和聚酯。做為多元醇，可舉出乙二醇、丙二醇、1,4-丁二醇等之二醇類等。多元羧酸，係含有對苯二甲酸、間苯二甲酸等之芳香族二羧酸；己二酸、癸二酸等之脂肪族二羧酸等。做為多元羧酸，多為併用芳香族二羧酸與脂肪族二羧酸之情況。
做為(ii)紫外線硬化性成分，只要分子中具有碳-碳雙鍵，為可藉由自由基聚合而硬化可能之單體、低聚物、聚合物等即可，例如，可舉出三羥甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、四乙二醇二(甲基)丙烯酸酯、1,6-己二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯等之(甲基)丙烯酸與多元醇之酯；酯丙烯酸酯低聚物；2-丙烯基二-3-丁烯基氰脲酸酯、2-羥乙基雙(2-丙烯酰氧基乙基)異氰脲酸酯、三(2-丙烯酰氧基乙基)異氰脲酸酯、三(2-甲基丙烯酰)異氰脲酸酯等之氰脲酸酯或異氰脲酸酯化合物等。
(iii)做為光聚合開始劑，只要是可成為該聚合反應之引子之藉由照射適當波長的紫外線而分裂生成自由基的物質即可，例如，可舉出苯偶姻甲基醚、苯偶姻異丙醚、苯偶姻異丁基醚等之苯偶姻烷基醚類；苄基、安息香、二苯甲酮、α-羥苯基丁酮等之芳香酮類；苄基二甲基縮醛等的芳香族縮醛類；聚二苯甲酮；氯噻噸酮、十二烷基噻噸酮、二甲基噻噸酮、二乙基噻噸酮等之噻噸酮類等。
前述交聯劑中，含有例如距異氰酸樹脂化合物、三聚氰胺、尿素樹脂、環氧樹脂、酸酐、多胺、含羧基高分子等。
更且，若使用將如此之接著成分塗布於薄膜之市售的切割薄片，則可簡便地進行接著作業(例如，如日本專利特開2010-258341所開示)。
【實施例】
(實施例1)
調製混合了以下成分之懸浮液。
(原料粉末)
(分散溶劑)
．2-乙基己醇 45重量分
(結合劑)
．PVB樹脂 4重量分
(分散劑)
．高分子界面活性劑 3重量分
(可塑劑)
．DOP 0.1重量分
將此懸浮液，使用刮刀法，使換算成燒成後之厚度成為0.25mm來成形成帶狀。將此重疊4層加壓層積，得到燒成後之厚度成為1mm之基板狀的粉末成形體。
將所得到之粉末成形體，在大氣中在1100℃預燒(預備燒成)之後，將基板置於鉬製板上，為了進行粒界氣孔的充分排出為目的，在上側開放0.1~0.5mm之間隙之狀態，在氫3：氮1的氣氛中，在1400℃到1600℃之升溫速度為50℃/h， 在1750℃進行燒成。之後，將基板置於鉬製板，在基板上也放置鉬製重錘之狀態，在1750℃進行3小時之退火處理。完成的基板，外徑為ψ 4吋，板厚1mm，表面之平均粒徑為20μm，藉由剖面觀察之氣孔率為0.1%以下。藉由在燒成時在上側開放間隙，進行添加物(主要是鎂等)之排出之同時，藉由放置重錘(施加荷重)在與燒成同等之溫度退火，可促進氣孔的排出。
測定所得到之透光性氧化鋁基板之波長在200~400nm之前方全光線透過率之平均值，為60%，執行透過率之平均值為15%。構成襯底基板之多結晶透光性氧化鋁之氧化鋁純度為99.9%。
接著，將此基板，以GC(生碳)磨石、鑽石磨石、CMP液體之順序使用而研磨至厚0.6mm，得到基材2。
接著，準備直徑ψ 4吋，厚度250μm之單結晶Si基板。然後，將單結晶Si基板與上述的基材2，藉由以電漿活性化而直接接合來貼合。接合所使用之兩基板，係在氮中實施電漿處理，在之後藉由水洗處理將表面的顆粒除去。兩基板，係藉由壓緊端部使其密著，該壓緊之部分接合之同時，其接合傳播至全面。此現象，兩基板係由於互相吸引的力(表面間引力)而自動進行接合，表面研磨至非常平滑之情況時可觀察到。
兩基板之接合結束後，將單結晶Si基板側以磨床研磨至厚度成為20μm，接著使用1μm之鑽石研磨粒與錫面盤精研加工使厚度成為3μm。接著，使用膠體二氧化矽與聚氨酯墊拋光，使厚度成為0.2μm。如此使Si基板變薄後，在300℃施以退火處理，得到基板2與施子基板3之複合基板。
在如此所得到之複合基板之施子基板3，使用曝光機形成細線圖樣4。亦即，首先，在施子基板板上塗布光阻，使用形成了線寬0.4μm之圖樣之遮罩曝光後，顯影。關於曝光，係使用KrF雷射(λ=248nm)。
在如此所得到之半導體電路基板之電路4側地主面上，以紫外線硬化型樹脂接著單結晶Si做為支持基板6。將半導體電路基板之反面2b側以磨床使半導體電路基板之厚度程為120μm為止而研磨。之後，對應所形成之電路4，使成為1mm×1mm之大小，而形成切割溝9。
接著，從襯底基板2A側照射300mJ/cm2 之中心波長365nm之紫外線，使紫外線硬化型樹脂5硬化。接著，從支持基板6，將各半導體電路基板10之個片剝離100個時，其中1個有發現基板10之破裂或剝離不良。
(實施例2)
同於實施例1製作複合基板。但是，測定所得到之透光性氧化鋁基板之在波長200~400nm之前方全光線透過率之平均值，為65%。直線透過率之平均值為10%。構成襯底基板之多結晶透光性氧化鋁之氧化鋁純度為99.9%。但是，為了改變前方全光線透過率、直線透過率，使燒成溫度為1710℃，退火溫度及時間變更為1710℃×12hr。
在此，從襯底基板2A側照射300mJ/cm2 之中心波長365nm之紫外線，使紫外線硬化型樹脂5硬化。接著，從支持基板6，將各半導體電路基板10之個片剝離100個時，沒有觀察到基板10之破裂或剝離不良。
(比較例1)
同於實施例1，將半導體電路基板與支持基板藉由紫外線硬化型樹脂接著，使紫外線硬化型樹脂硬化，而將100個半導體電路基板10從支持基板剝離。但是，在本例中，襯底基板為單結晶藍寶石，在200~400nm之波長範圍之前方全光線透過率之平均值為85%。在200~400nm之波長範圍之直線透過率之平均值為80%。
然後，從襯底基板2A側照射300mJ/cm2 之中心波長365nm之紫外線，使紫外線硬化型樹脂5硬化。接著，從支持基板6，將被切斷之各半導體電路基板10之個片剝離100個時，9個有發現基板10之破裂或剝離不良。
(比較例2)
同於實施例1，將半導體電路基板與支持基板藉由紫外線硬化型樹脂接著，使紫外線硬化型樹脂硬化，而將100個半導體電路基板10從支持基板剝離。但是，在本例中，襯底基板為氧化鋁(99.5%純度)，在200~400nm之波長範圍之前方全光線透過率之平均值為50%。在200~400nm之波長範圍之直線透過率之平均值為1%以下。
然後，雖然從襯底基板2A側照射了300mJ/cm2 之中心波長365nm之紫外線，但紫外線硬化型樹脂5沒有硬化而無法從切斷之各半導體電路基板10之個片從基板6剝離。
(比較例3)
延長在比較例2中紫外線的照射時間。亦即，雖然從襯底基板2A側照射了900mJ/cm2 之中心波長365nm之紫外線，但 紫外線硬化型數之5無法硬化，而無法將切斷之各半導體電路基板10之各片剝離。上述結果彙整於表1。
1‧‧‧零件
1A‧‧‧零件
2‧‧‧基板
2A‧‧‧襯底基板
2a‧‧‧接合面
2b‧‧‧對向面
2c‧‧‧薄板化加工後之對向面
3‧‧‧施子基板
4‧‧‧電路
5‧‧‧紫外線硬化型樹脂
6‧‧‧支持基板

Claims (7)

  1. 一種襯底基板，係半導體用複合基板之襯底基板，其特徵在於：前述襯底基板係由多結晶透光性氧化鋁所形成，前述多結晶透光性氧化鋁之氧化鋁純度為99.9%以上，前述多結晶透光性氧化鋁之在200~400nm的波長範圍內之前方全光線透過率之平均值為60%以上，前述多結晶透光性氧化鋁之在200~400nm的波長範圍內之直線透過率之平均值為15%以下。
  2. 一種半導體用複合基板，其特徵在於：具有申請專利範圍第1項之襯底基板、以及對於前述襯底基板之接合面接合之施子基板。
  3. 根據申請專利範圍第2項之複合基板，其中，前述施子基板係由單結晶矽所形成。
  4. 一種半導體電路基板，其特徵在於：具有申請專利範圍第2或第3項之半導體用複合基板，以及設置在前述施子基板上之電路。
  5. 一種半導體電路基板之製造方法，係製造襯底基板、對於襯底基板之接合面接合之施子基板、以及設置在施子基板上之具有電路之半導體電路基板之方法，其特徵在於：為了得到由多結晶透光性氧化鋁所形成之具有接合面與對向面之基材，對於此基材之接合面接合之施子基板，以及設置在前述施子基板上之電路之零件的工程，前述多結晶 透光性氧化鋁之氧化鋁純度為99.9%以上，前述多結晶透光性氧化鋁之在200~400nm的波長範圍內之前方全光線透過率之平均值為60%以上，前述多結晶透光性氧化鋁之在200~400nm的波長範圍內之直線透過率之平均值為15%以下之工程；由前述對向面側將前述基材加工，藉由使前述基材的厚度變小而形成前述襯底基板之工程；以及在使前述施子基板與支持基板之間介在紫外線硬化型樹脂之狀態下，藉由從前述襯底基板側往前述紫外線硬化型樹脂照射200~400nm之波長範圍之紫外線而使前述紫外線硬化型樹脂硬化。
  6. 根據申請專利範圍第5項之方法，其中，使前述紫外線硬化型樹脂硬化後，具有將支持基板從前述半導體電路基板剝離之剝離工程。
  7. 根據申請專利範圍第5或6項之方法，其中，前述施子基板係由單結晶矽所形成。
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