TWI562517B - Voltage regulator circuit and semiconductor device - Google Patents

Voltage regulator circuit and semiconductor device

Info

Publication number
TWI562517B
TWI562517B TW099135742A TW99135742A TWI562517B TW I562517 B TWI562517 B TW I562517B TW 099135742 A TW099135742 A TW 099135742A TW 99135742 A TW99135742 A TW 99135742A TW I562517 B TWI562517 B TW I562517B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
voltage regulator
regulator circuit
circuit
voltage
Prior art date
Application number
TW099135742A
Other languages
English (en)
Chinese (zh)
Other versions
TW201143264A (en
Inventor
Shunpei Yamazaki
Hiroyuki Miyake
Masashi Tsubuku
Kosei Noda
Original Assignee
Semiconductor Energy Lab Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab Co Ltd filed Critical Semiconductor Energy Lab Co Ltd
Publication of TW201143264A publication Critical patent/TW201143264A/zh
Application granted granted Critical
Publication of TWI562517B publication Critical patent/TWI562517B/zh

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/10—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
TW099135742A 2009-10-21 2010-10-20 Voltage regulator circuit and semiconductor device TWI562517B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009242758 2009-10-21
JP2010012617 2010-01-22

Publications (2)

Publication Number Publication Date
TW201143264A TW201143264A (en) 2011-12-01
TWI562517B true TWI562517B (en) 2016-12-11

Family

ID=43878803

Family Applications (3)

Application Number Title Priority Date Filing Date
TW099135742A TWI562517B (en) 2009-10-21 2010-10-20 Voltage regulator circuit and semiconductor device
TW106136959A TWI649882B (zh) 2009-10-21 2010-10-20 電壓調整器電路及半導體裝置
TW105128483A TWI611588B (zh) 2009-10-21 2010-10-20 電壓調整器電路及半導體裝置

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW106136959A TWI649882B (zh) 2009-10-21 2010-10-20 電壓調整器電路及半導體裝置
TW105128483A TWI611588B (zh) 2009-10-21 2010-10-20 電壓調整器電路及半導體裝置

Country Status (5)

Country Link
US (3) US8963517B2 (https=)
JP (3) JP5730529B2 (https=)
KR (1) KR101751908B1 (https=)
TW (3) TWI562517B (https=)
WO (1) WO2011049230A1 (https=)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102598280B (zh) 2009-10-21 2016-05-18 株式会社半导体能源研究所 液晶显示器件及包括该液晶显示器件的电子设备
WO2011068025A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Dc converter circuit and power supply circuit
CN102667910B (zh) 2009-12-18 2015-11-25 株式会社半导体能源研究所 液晶显示设备和电子设备
KR102248998B1 (ko) 2010-01-20 2021-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자 기기
KR102008754B1 (ko) 2010-01-24 2019-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
WO2011111505A1 (en) * 2010-03-08 2011-09-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2011145738A1 (en) 2010-05-20 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for driving semiconductor device
US9362820B2 (en) 2010-10-07 2016-06-07 Semiconductor Energy Laboratory Co., Ltd. DCDC converter, semiconductor device, and power generation device
JP5933897B2 (ja) 2011-03-18 2016-06-15 株式会社半導体エネルギー研究所 半導体装置
US9960278B2 (en) * 2011-04-06 2018-05-01 Yuhei Sato Manufacturing method of semiconductor device
KR101919056B1 (ko) 2011-04-28 2018-11-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 회로
US20160277017A1 (en) * 2011-09-13 2016-09-22 Fsp Technology Inc. Snubber circuit
KR102101167B1 (ko) * 2012-02-03 2020-04-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP6100559B2 (ja) 2012-03-05 2017-03-22 株式会社半導体エネルギー研究所 半導体記憶装置
JP2013258895A (ja) * 2012-05-18 2013-12-26 Semiconductor Energy Lab Co Ltd 半導体装置及びその駆動方法
US9048265B2 (en) * 2012-05-31 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device comprising oxide semiconductor layer
KR102141977B1 (ko) * 2012-07-20 2020-08-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9269315B2 (en) 2013-03-08 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Driving method of semiconductor device
TWI643435B (zh) 2013-08-21 2018-12-01 日商半導體能源研究所股份有限公司 電荷泵電路以及具備電荷泵電路的半導體裝置
TWI496398B (zh) * 2013-12-31 2015-08-11 Egalax Empia Technology Inc Use the wiring to change the output voltage of the charge pump
US9817040B2 (en) * 2014-02-21 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Measuring method of low off-state current of transistor
JP6462404B2 (ja) 2014-02-28 2019-01-30 株式会社半導体エネルギー研究所 Ｄｃｄｃコンバータ、半導体装置、及び電子機器
KR102267237B1 (ko) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
JP6487738B2 (ja) 2014-03-31 2019-03-20 株式会社半導体エネルギー研究所 半導体装置、電子部品
JP6616102B2 (ja) 2014-05-23 2019-12-04 株式会社半導体エネルギー研究所 記憶装置及び電子機器
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2016089917A2 (en) * 2014-12-01 2016-06-09 Endura Technologies LLC Switched power stage with integrated passive components
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
US10453404B2 (en) 2016-08-17 2019-10-22 Semiconductor Energy Laboratory Co., Ltd. Display method, display device, display module, and electronic device
CN107026384B (zh) * 2017-05-02 2023-07-21 中国工程物理研究院激光聚变研究中心 一种为固体激光放大器泵浦能量的氙灯装置
WO2019066931A1 (en) * 2017-09-29 2019-04-04 Intel Corporation VOLTAGE REGULATOR CIRCUIT COMPRISING ONE OR MORE THIN FILM TRANSISTORS
JP7305933B2 (ja) * 2018-07-23 2023-07-11 株式会社リコー 金属酸化物膜形成用塗布液、酸化物絶縁体膜、電界効果型トランジスタ、表示素子、画像表示装置、及びシステム
JP7083727B2 (ja) * 2018-08-23 2022-06-13 株式会社半導体エネルギー研究所 半導体装置
KR102826238B1 (ko) 2018-12-28 2025-06-30 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR20220054313A (ko) 2019-08-29 2022-05-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 동작 방법
US11379231B2 (en) 2019-10-25 2022-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing system and operation method of data processing system
JP7195504B2 (ja) * 2020-07-31 2022-12-26 国立研究開発法人日本原子力研究開発機構 真空部品、これを用いた真空排気方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3790935A (en) * 1971-03-26 1974-02-05 Bell Canada Northern Electric Bubble in low coercivity channel
TW200832877A (en) * 2007-01-23 2008-08-01 Etron Technology Inc A new charge pump circuit for high voltage generation

Family Cites Families (240)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6294796B1 (en) 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
US5736751A (en) 1982-04-13 1998-04-07 Seiko Epson Corporation Field effect transistor having thick source and drain regions
FR2527385B1 (fr) 1982-04-13 1987-05-22 Suwa Seikosha Kk Transistor a couche mince et panneau d'affichage a cristaux liquides utilisant ce type de transistor
US5698864A (en) 1982-04-13 1997-12-16 Seiko Epson Corporation Method of manufacturing a liquid crystal device having field effect transistors
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH02156676A (ja) * 1988-12-09 1990-06-15 Fuji Xerox Co Ltd 薄膜半導体装置
US5162901A (en) 1989-05-26 1992-11-10 Sharp Kabushiki Kaisha Active-matrix display device with added capacitance electrode wire and secondary wire connected thereto
US5247375A (en) 1990-03-09 1993-09-21 Hitachi, Ltd. Display device, manufacturing method thereof and display panel
KR940005240B1 (ko) 1990-05-07 1994-06-15 후지스 가부시끼가이샤 고성능 엑티브 매트릭스(active matrix)형 표시장치
KR940008180B1 (ko) 1990-12-27 1994-09-07 가부시끼가이샤 한도다이 에네르기 겐꾸쇼 액정 전기 광학 장치 및 그 구동 방법
TW222345B (en) 1992-02-25 1994-04-11 Semicondustor Energy Res Co Ltd Semiconductor and its manufacturing method
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP3476241B2 (ja) 1994-02-25 2003-12-10 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置の表示方法
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
WO1997006554A2 (en) 1995-08-03 1997-02-20 Philips Electronics N.V. Semiconductor device provided with transparent switching element
KR100215851B1 (ko) * 1995-12-26 1999-08-16 구본준 반도체 소자의 구조
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
JPH10133227A (ja) * 1996-10-28 1998-05-22 Hitachi Ltd 液晶表示装置およびその製造方法
JP3883641B2 (ja) 1997-03-27 2007-02-21 株式会社半導体エネルギー研究所 コンタクト構造およびアクティブマトリクス型表示装置
US7663607B2 (en) 2004-05-06 2010-02-16 Apple Inc. Multipoint touchscreen
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP3462135B2 (ja) 1999-01-14 2003-11-05 シャープ株式会社 二次元画像検出器およびアクティブマトリクス基板並びに表示装置
US7379039B2 (en) 1999-07-14 2008-05-27 Sony Corporation Current drive circuit and display device using same pixel circuit, and drive method
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
US6580127B1 (en) 1999-09-30 2003-06-17 International Business Machines Corporation High performance thin film transistor and active matrix process for flat panel displays
TW468283B (en) 1999-10-12 2001-12-11 Semiconductor Energy Lab EL display device and a method of manufacturing the same
TW480727B (en) 2000-01-11 2002-03-21 Semiconductor Energy Laboratro Semiconductor display device
TW531901B (en) 2000-04-27 2003-05-11 Semiconductor Energy Lab Light emitting device
CN1220098C (zh) 2000-04-28 2005-09-21 夏普株式会社 显示器件、显示器件驱动方法和装有显示器件的电子设备
US7240364B1 (en) 2000-05-20 2007-07-03 Ciena Corporation Network device identity authentication
US20020057018A1 (en) 2000-05-20 2002-05-16 Equipe Communications Corporation Network device power distribution scheme
US7266595B1 (en) 2000-05-20 2007-09-04 Ciena Corporation Accessing network device data through user profiles
US6880086B2 (en) 2000-05-20 2005-04-12 Ciena Corporation Signatures for facilitating hot upgrades of modular software components
US20020001307A1 (en) 2000-05-20 2002-01-03 Equipe Communications Corporation VPI/VCI availability index
US7111053B1 (en) 2000-05-20 2006-09-19 Ciena Corporation Template-driven management of telecommunications network via utilization of operations support services clients
US7143153B1 (en) 2000-11-09 2006-11-28 Ciena Corporation Internal network device dynamic health monitoring
US7222147B1 (en) 2000-05-20 2007-05-22 Ciena Corporation Processing network management data in accordance with metadata files
US20020116485A1 (en) 2001-02-21 2002-08-22 Equipe Communications Corporation Out-of-band network management channels
US7039046B1 (en) 2000-05-20 2006-05-02 Ciena Corporation Network device including central and distributed switch fabric subsystems
US6876652B1 (en) 2000-05-20 2005-04-05 Ciena Corporation Network device with a distributed switch fabric timing system
US7054272B1 (en) 2000-07-11 2006-05-30 Ciena Corporation Upper layer network device including a physical layer test port
US6930890B1 (en) 2000-05-20 2005-08-16 Ciena Corporation Network device including reverse orientated modules
US6658580B1 (en) 2000-05-20 2003-12-02 Equipe Communications Corporation Redundant, synchronous central timing systems with constant master voltage controls and variable slave voltage controls
US6639910B1 (en) 2000-05-20 2003-10-28 Equipe Communications Corporation Functional separation of internal and external controls in network devices
US6332198B1 (en) 2000-05-20 2001-12-18 Equipe Communications Corporation Network device for supporting multiple redundancy schemes
US6934749B1 (en) 2000-05-20 2005-08-23 Ciena Corporation Tracking distributed data retrieval in a network device
US6658579B1 (en) 2000-05-20 2003-12-02 Equipe Communications Corporation Network device with local timing systems for automatic selection between redundant, synchronous central timing systems
US6654903B1 (en) 2000-05-20 2003-11-25 Equipe Communications Corporation Vertical fault isolation in a computer system
US7280529B1 (en) 2000-05-20 2007-10-09 Ciena Corporation Providing network management access through user profiles
US6868092B1 (en) 2000-05-20 2005-03-15 Ciena Corporation Network device with embedded timing synchronization
US20020118031A1 (en) 2001-02-27 2002-08-29 Equipe Communications Corporation Connector test card
US20030120822A1 (en) 2001-04-19 2003-06-26 Langrind Nicholas A. Isolated control plane addressing
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
JP3666805B2 (ja) 2000-09-19 2005-06-29 ローム株式会社 Ｄｃ／ｄｃコンバータ
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
TWI313059B (https=) 2000-12-08 2009-08-01 Sony Corporatio
JP4789322B2 (ja) * 2000-12-28 2011-10-12 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
TW525216B (en) 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
US7263597B2 (en) 2001-04-19 2007-08-28 Ciena Corporation Network device including dedicated resources control plane
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP2003098538A (ja) 2001-09-20 2003-04-03 Seiko Epson Corp 電気光学装置及びその製造方法
US7061014B2 (en) 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
JP2003158133A (ja) * 2001-11-21 2003-05-30 Fujitsu Display Technologies Corp 薄膜トランジスタ装置及びその製造方法
US6657254B2 (en) * 2001-11-21 2003-12-02 General Semiconductor, Inc. Trench MOSFET device with improved on-resistance
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
JP2004006686A (ja) 2002-03-26 2004-01-08 Sanyo Electric Co Ltd ＺｎＯ半導体層の形成方法、半導体素子の製造方法及び半導体素子
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
CN1666242A (zh) 2002-04-26 2005-09-07 东芝松下显示技术有限公司 用于场致发光显示屏的驱动电路
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
JP4366914B2 (ja) 2002-09-25 2009-11-18 日本電気株式会社 表示装置用駆動回路及びそれを用いた表示装置
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
KR100732106B1 (ko) 2003-01-22 2007-06-27 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 유기 ｅｌ 디스플레이 및 액티브 매트릭스 기판
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
WO2004100118A1 (ja) 2003-05-07 2004-11-18 Toshiba Matsushita Display Technology Co., Ltd. Ｅｌ表示装置およびその駆動方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
JP4524735B2 (ja) 2003-06-20 2010-08-18 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
KR20070116888A (ko) 2004-03-12 2007-12-11 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 아몰퍼스 산화물 및 박막 트랜지스터
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7072193B2 (en) 2004-05-19 2006-07-04 Toppoly Optoelectronics Corp. Integrated charge pump DC/DC conversion circuits using thin film transistors
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
WO2006004139A1 (ja) * 2004-06-30 2006-01-12 Sumitomo Metal Mining Co., Ltd. 導波路型光制御素子とその製造方法
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
JP5138163B2 (ja) 2004-11-10 2013-02-06 キヤノン株式会社 電界効果型トランジスタ
CA2585063C (en) 2004-11-10 2013-01-15 Canon Kabushiki Kaisha Light-emitting device
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
JP5126729B2 (ja) 2004-11-10 2013-01-23 キヤノン株式会社 画像表示装置
JP5118810B2 (ja) 2004-11-10 2013-01-16 キヤノン株式会社 電界効果型トランジスタ
BRPI0517560B8 (pt) 2004-11-10 2018-12-11 Canon Kk transistor de efeito de campo
EP2453481B1 (en) 2004-11-10 2017-01-11 Canon Kabushiki Kaisha Field effect transistor with amorphous oxide
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
JP2006189661A (ja) 2005-01-06 2006-07-20 Toshiba Corp 画像表示装置及びその方法
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
US7608531B2 (en) 2005-01-28 2009-10-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device, and method of manufacturing semiconductor device
TWI505473B (zh) 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
WO2006105077A2 (en) 2005-03-28 2006-10-05 Massachusetts Institute Of Technology Low voltage thin film transistor with high-k dielectric material
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR101139529B1 (ko) 2005-06-30 2012-05-02 엘지디스플레이 주식회사 유기전계발광소자 및 유기전계발광 표시장치
KR100547515B1 (ko) 2005-07-27 2006-01-31 실리콘 디스플레이 (주) 유기발광다이오드 표시장치 및 그 구동방법
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4958253B2 (ja) 2005-09-02 2012-06-20 財団法人高知県産業振興センター 薄膜トランジスタ
JP4560502B2 (ja) 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5427340B2 (ja) * 2005-10-14 2014-02-26 株式会社半導体エネルギー研究所 半導体装置
EP1935027B1 (en) 2005-10-14 2017-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR20090115222A (ko) 2005-11-15 2009-11-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
US7998372B2 (en) 2005-11-18 2011-08-16 Idemitsu Kosan Co., Ltd. Semiconductor thin film, method for manufacturing the same, thin film transistor, and active-matrix-driven display panel
US7692610B2 (en) 2005-11-30 2010-04-06 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101333749B1 (ko) 2005-12-27 2013-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 차지 펌프 회로 및 그것을 구비한 반도체장치
JP5036293B2 (ja) 2005-12-27 2012-09-26 株式会社半導体エネルギー研究所 チャージポンプ回路及びそれを有する半導体装置
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
US7443202B2 (en) 2006-06-02 2008-10-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic apparatus having the same
KR101295943B1 (ko) 2006-06-09 2013-08-13 애플 인크. 터치 스크린 액정 디스플레이
US8552989B2 (en) 2006-06-09 2013-10-08 Apple Inc. Integrated display and touch screen
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP5312938B2 (ja) 2006-06-21 2013-10-09 パナソニック株式会社 電界効果トランジスタ
KR101202040B1 (ko) 2006-06-30 2012-11-16 엘지디스플레이 주식회사 유기발광다이오드 표시소자 및 그 구동방법
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP5127183B2 (ja) 2006-08-23 2013-01-23 キヤノン株式会社 アモルファス酸化物半導体膜を用いた薄膜トランジスタの製造方法
JP5227502B2 (ja) 2006-09-15 2013-07-03 株式会社半導体エネルギー研究所 液晶表示装置の駆動方法、液晶表示装置及び電子機器
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7511343B2 (en) 2006-10-12 2009-03-31 Xerox Corporation Thin film transistor
JP4866703B2 (ja) 2006-10-20 2012-02-01 株式会社 日立ディスプレイズ 液晶表示装置
JP2008117739A (ja) 2006-11-02 2008-05-22 Adorinkusu:Kk プリント基板用の信号中継具
US8018428B2 (en) 2006-11-27 2011-09-13 Samsung Electronics Co., Ltd. Electrophoretic display panel, electrophoretic display device having the same and method for driving the same
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
US8143115B2 (en) 2006-12-05 2012-03-27 Canon Kabushiki Kaisha Method for manufacturing thin film transistor using oxide semiconductor and display apparatus
WO2008069255A1 (en) 2006-12-05 2008-06-12 Canon Kabushiki Kaisha Method for manufacturing thin film transistor using oxide semiconductor and display apparatus
JP5305630B2 (ja) 2006-12-05 2013-10-02 キヤノン株式会社 ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法
US8207944B2 (en) 2006-12-19 2012-06-26 3M Innovative Properties Company Capacitance measuring circuit and method
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
KR100787464B1 (ko) * 2007-01-08 2007-12-26 삼성에스디아이 주식회사 박막 트랜지스터, 및 그 제조방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
JP5466939B2 (ja) 2007-03-23 2014-04-09 出光興産株式会社 半導体デバイス、多結晶半導体薄膜、多結晶半導体薄膜の製造方法、電界効果型トランジスタ、及び、電界効果型トランジスタの製造方法
JP5178710B2 (ja) 2007-04-09 2013-04-10 シャープ株式会社 表示装置
JP5197058B2 (ja) 2007-04-09 2013-05-15 キヤノン株式会社 発光装置とその作製方法
WO2008126879A1 (en) 2007-04-09 2008-10-23 Canon Kabushiki Kaisha Light-emitting apparatus and production method thereof
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
JP5043499B2 (ja) 2007-05-02 2012-10-10 財団法人高知県産業振興センター 電子素子及び電子素子の製造方法
KR20080099084A (ko) 2007-05-08 2008-11-12 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법
JP2009003437A (ja) 2007-05-18 2009-01-08 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその作製方法
US8803781B2 (en) 2007-05-18 2014-08-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
JP5406449B2 (ja) 2007-05-30 2014-02-05 キヤノン株式会社 酸化物半導体を用いた薄膜トランジスタの製造方法および表示装置
EP2153468B1 (en) 2007-05-31 2010-12-01 Canon Kabushiki Kaisha Manufacturing method of thin film transistor using oxide semiconductor
KR101376073B1 (ko) 2007-06-14 2014-03-21 삼성디스플레이 주식회사 박막 트랜지스터, 이를 포함하는 어레이 기판 및 이의 제조방법
US20090015536A1 (en) 2007-07-06 2009-01-15 Toshiba Matsushita Display Technology Co., Ltd. Liquid crystal display apparatus
JP2009060702A (ja) 2007-08-30 2009-03-19 Sanyo Electric Co Ltd チャージポンプ式昇圧回路
US20090086511A1 (en) 2007-09-27 2009-04-02 Phison Electronics Corp. Converter circuit with pulse width frequency modulation and method thereof
TWI350474B (en) 2007-09-29 2011-10-11 Au Optronics Corp Capacitive touch panel with low impedance and method of manufacturing capacitive touch panels with low impedance
JP2009099847A (ja) 2007-10-18 2009-05-07 Canon Inc 薄膜トランジスタとその製造方法及び表示装置
JP5213422B2 (ja) 2007-12-04 2013-06-19 キヤノン株式会社 絶縁層を有する酸化物半導体素子およびそれを用いた表示装置
WO2009081885A1 (ja) * 2007-12-25 2009-07-02 Idemitsu Kosan Co., Ltd. 酸化物半導体電界効果型トランジスタ及びその製造方法
CN103258857B (zh) * 2007-12-13 2016-05-11 出光兴产株式会社 使用了氧化物半导体的场效应晶体管及其制造方法
JP5215158B2 (ja) 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
KR100936874B1 (ko) 2007-12-18 2010-01-14 삼성모바일디스플레이주식회사 박막 트랜지스터의 제조 방법 및 박막 트랜지스터를구비하는 유기전계발광 표시 장치의 제조 방법
TWI374379B (en) 2007-12-24 2012-10-11 Wintek Corp Transparent capacitive touch panel and manufacturing method thereof
JP5439723B2 (ja) 2008-01-22 2014-03-12 セイコーエプソン株式会社 薄膜トランジスタ、マトリクス基板、電気泳動表示装置および電子機器
US8586979B2 (en) * 2008-02-01 2013-11-19 Samsung Electronics Co., Ltd. Oxide semiconductor transistor and method of manufacturing the same
JP2009276744A (ja) 2008-02-13 2009-11-26 Toshiba Mobile Display Co Ltd Ｅｌ表示装置
JP2009267399A (ja) 2008-04-04 2009-11-12 Fujifilm Corp 半導体装置，半導体装置の製造方法，表示装置及び表示装置の製造方法
JP5325446B2 (ja) 2008-04-16 2013-10-23 株式会社日立製作所 半導体装置及びその製造方法
JP5305731B2 (ja) 2008-05-12 2013-10-02 キヤノン株式会社 半導体素子の閾値電圧の制御方法
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
KR101515468B1 (ko) 2008-12-12 2015-05-06 삼성전자주식회사 표시장치 및 그 동작방법
US8217913B2 (en) 2009-02-02 2012-07-10 Apple Inc. Integrated touch screen
JP5185155B2 (ja) 2009-02-24 2013-04-17 株式会社ジャパンディスプレイセントラル 液晶表示装置
JP5195650B2 (ja) 2009-06-03 2013-05-08 セイコーエプソン株式会社 液晶表示装置、制御方法および電子機器
TWI494828B (zh) 2009-07-29 2015-08-01 Cando Corp 具降低感測結構可視性之電容式觸控面板
US8614654B2 (en) 2009-07-30 2013-12-24 Apple Inc. Crosstalk reduction in LCD panels
KR101865546B1 (ko) 2009-10-16 2018-06-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 액정 표시 장치를 포함한 전자 기기
KR20260036405A (ko) 2009-10-29 2026-03-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011052366A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
WO2011070929A1 (en) 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
CN102667910B (zh) 2009-12-18 2015-11-25 株式会社半导体能源研究所 液晶显示设备和电子设备
KR102329671B1 (ko) 2009-12-18 2021-11-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101763660B1 (ko) 2009-12-18 2017-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 그 구동 방법
US9057758B2 (en) 2009-12-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for measuring current, method for inspecting semiconductor device, semiconductor device, and test element group
WO2011081010A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
WO2011089843A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device
KR101747421B1 (ko) 2010-01-20 2017-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 구동 방법
KR102008754B1 (ko) 2010-01-24 2019-08-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
US8879010B2 (en) 2010-01-24 2014-11-04 Semiconductor Energy Laboratory Co., Ltd. Display device
KR102135326B1 (ko) 2010-01-24 2020-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US20110267303A1 (en) 2010-05-02 2011-11-03 Acer Incorporated Capacitive touch panel
JP5248653B2 (ja) 2010-05-27 2013-07-31 富士フイルム株式会社 導電シート及び静電容量方式タッチパネル

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3790935A (en) * 1971-03-26 1974-02-05 Bell Canada Northern Electric Bubble in low coercivity channel
TW200832877A (en) * 2007-01-23 2008-08-01 Etron Technology Inc A new charge pump circuit for high voltage generation

Also Published As

Publication number Publication date
JP2015156505A (ja) 2015-08-27
KR101751908B1 (ko) 2017-06-28
US20170054034A1 (en) 2017-02-23
US9929281B2 (en) 2018-03-27
TW201705493A (zh) 2017-02-01
TW201143264A (en) 2011-12-01
US20150236163A1 (en) 2015-08-20
JP6363235B2 (ja) 2018-07-25
US9431546B2 (en) 2016-08-30
TWI649882B (zh) 2019-02-01
US20110089927A1 (en) 2011-04-21
US8963517B2 (en) 2015-02-24
KR20120089719A (ko) 2012-08-13
JP2011171700A (ja) 2011-09-01
TWI611588B (zh) 2018-01-11
JP5730529B2 (ja) 2015-06-10
TW201810687A (zh) 2018-03-16
WO2011049230A1 (en) 2011-04-28
JP2017069589A (ja) 2017-04-06

Similar Documents

Publication Publication Date Title
TWI562517B (en) Voltage regulator circuit and semiconductor device
TWI562115B (en) Logic circuit and semiconductor device
TWI442589B (en) Semiconductor device and electronic apparatus
GB2474312B (en) Electrical power outlet device and module thereof
TWI562330B (en) Semiconductor device
TWI562381B (en) Semiconductor device
EP2494427A4 (en) DISPLAY DEVICE AND SEMICONDUCTOR ELEMENT
SG10201408329SA (en) Memory device, semiconductor device, and electronic device
TWI562365B (en) Oxide semiconductor film and semiconductor device
EP2497114A4 (en) SEMICONDUCTOR DEVICE
BRPI1006225A2 (pt) circuito de alimentação e dispositivo
SG10201500353WA (en) Semiconductor device
IL217818A (en) Methods and sensors for electric current
EP2599112A4 (en) Semiconductor device and structure
EP3920237C0 (en) SEMICONDUCTOR COMPONENT
EP2591546A4 (en) EXCITATION CIRCUIT, SEMICONDUCTOR DEVICE WITH EXCITATION CIRCUIT AND CUTTING REGULATOR, AND ELECTRONIC EQUIPMENT USING EXCITATION CIRCUIT AND SEMICONDUCTOR DEVICE
GB2496067B (en) Power semiconductor device
EP2413495A4 (en) Semiconductor integrated circuit device
EP2580755A4 (en) CALIBRATION OF SYNCHRONIZATION OF AN INTEGRATED CIRCUIT DEVICE
GB201214411D0 (en) Switching control circuit and switching power supply device
IL224986A (en) High current regulator circuit and high voltage
TWM372040U (en) Power supply device and power switch component
SG10201500542TA (en) Semiconductor device
GB2482479B (en) Semiconductor device
EP2385424A4 (en) DISPLAY ELEMENT AND ELECTRICAL DEVICE

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees