TWI447780B - A substrate holding device, an exposure apparatus provided therewith, an exposure method, an element manufacturing method, and a liquid transfer sheet - Google Patents

A substrate holding device, an exposure apparatus provided therewith, an exposure method, an element manufacturing method, and a liquid transfer sheet Download PDF

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Publication number
TWI447780B
TWI447780B TW094118986A TW94118986A TWI447780B TW I447780 B TWI447780 B TW I447780B TW 094118986 A TW094118986 A TW 094118986A TW 94118986 A TW94118986 A TW 94118986A TW I447780 B TWI447780 B TW I447780B
Authority
TW
Taiwan
Prior art keywords
substrate
liquid
plate member
holding
wall portion
Prior art date
Application number
TW094118986A
Other languages
English (en)
Chinese (zh)
Other versions
TW200610029A (en
Inventor
柴崎祐一
Original Assignee
尼康股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 尼康股份有限公司 filed Critical 尼康股份有限公司
Publication of TW200610029A publication Critical patent/TW200610029A/zh
Application granted granted Critical
Publication of TWI447780B publication Critical patent/TWI447780B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW094118986A 2004-06-09 2005-06-09 A substrate holding device, an exposure apparatus provided therewith, an exposure method, an element manufacturing method, and a liquid transfer sheet TWI447780B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004171116 2004-06-09
JP2004205008 2004-07-12

Publications (2)

Publication Number Publication Date
TW200610029A TW200610029A (en) 2006-03-16
TWI447780B true TWI447780B (zh) 2014-08-01

Family

ID=35503355

Family Applications (2)

Application Number Title Priority Date Filing Date
TW094118986A TWI447780B (zh) 2004-06-09 2005-06-09 A substrate holding device, an exposure apparatus provided therewith, an exposure method, an element manufacturing method, and a liquid transfer sheet
TW102120665A TWI574300B (zh) 2004-06-09 2005-06-09 Exposure apparatus, exposure method, and device manufacturing method

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW102120665A TWI574300B (zh) 2004-06-09 2005-06-09 Exposure apparatus, exposure method, and device manufacturing method

Country Status (10)

Country Link
US (2) US8705008B2 (https=)
EP (3) EP3318928A1 (https=)
JP (8) JP5170228B2 (https=)
KR (7) KR101227290B1 (https=)
CN (4) CN103558737A (https=)
HK (1) HK1249935A1 (https=)
IL (2) IL179937A (https=)
SG (3) SG153813A1 (https=)
TW (2) TWI447780B (https=)
WO (1) WO2005122219A1 (https=)

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG135052A1 (en) 2002-11-12 2007-09-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US10503084B2 (en) * 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121819A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP3104396B1 (en) 2003-06-13 2018-03-21 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
EP3370115A1 (en) * 2003-12-03 2018-09-05 Nikon Corporation Exposure apparatus, exposure method and method for producing a device
CN103558737A (zh) * 2004-06-09 2014-02-05 尼康股份有限公司 基板保持装置、具备其之曝光装置、方法
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20070054635A (ko) * 2004-09-17 2007-05-29 가부시키가이샤 니콘 노광용 기판, 노광 방법 및 디바이스 제조 방법
US8102512B2 (en) 2004-09-17 2012-01-24 Nikon Corporation Substrate holding device, exposure apparatus, and device manufacturing method
WO2006064851A1 (ja) * 2004-12-15 2006-06-22 Nikon Corporation 基板保持装置、露光装置、及びデバイス製造方法
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4708876B2 (ja) * 2005-06-21 2011-06-22 キヤノン株式会社 液浸露光装置
JP4968076B2 (ja) * 2005-12-08 2012-07-04 株式会社ニコン 基板保持装置、露光装置、露光方法、及びデバイス製造方法
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JPWO2007083592A1 (ja) * 2006-01-17 2009-06-11 株式会社ニコン 基板保持装置及び露光装置、並びにデバイス製造方法
JPWO2007139017A1 (ja) * 2006-05-29 2009-10-08 株式会社ニコン 液体回収部材、基板保持部材、露光装置、及びデバイス製造方法
US8253922B2 (en) 2006-11-03 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
US8208116B2 (en) * 2006-11-03 2012-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
US8040490B2 (en) * 2006-12-01 2011-10-18 Nikon Corporation Liquid immersion exposure apparatus, exposure method, and method for producing device
JP2008192854A (ja) * 2007-02-05 2008-08-21 Canon Inc 液浸露光装置
US20080198346A1 (en) * 2007-02-16 2008-08-21 Canon Kabushiki Kaisha Exposure apparatus and method for manufacturing device
US20080304025A1 (en) * 2007-06-08 2008-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
TWI450047B (zh) * 2007-07-13 2014-08-21 瑪波微影Ｉｐ公司 微影系統、夾緊方法及晶圓台
US8705010B2 (en) * 2007-07-13 2014-04-22 Mapper Lithography Ip B.V. Lithography system, method of clamping and wafer table
NL1036526A1 (nl) 2008-02-14 2009-08-17 Asml Netherlands Bv Use of a coating, an article having the coating and a lithographic apparatus comprising the coating.
US20100039628A1 (en) * 2008-03-19 2010-02-18 Nikon Corporation Cleaning tool, cleaning method, and device fabricating method
US9176393B2 (en) * 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
EP2131242A1 (en) * 2008-06-02 2009-12-09 ASML Netherlands B.V. Substrate table, lithographic apparatus and device manufacturing method
TW201009895A (en) * 2008-08-11 2010-03-01 Nikon Corp Exposure apparatus, maintaining method and device fabricating method
US20100283979A1 (en) * 2008-10-31 2010-11-11 Nikon Corporation Exposure apparatus, exposing method, and device fabricating method
US8896806B2 (en) 2008-12-29 2014-11-25 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
US20100196832A1 (en) 2009-01-30 2010-08-05 Nikon Corporation Exposure apparatus, exposing method, liquid immersion member and device fabricating method
WO2010103822A1 (ja) 2009-03-10 2010-09-16 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
NL2004305A (en) 2009-03-13 2010-09-14 Asml Netherlands Bv Substrate table, immersion lithographic apparatus and device manufacturing method.
US8953143B2 (en) * 2009-04-24 2015-02-10 Nikon Corporation Liquid immersion member
US20100323303A1 (en) * 2009-05-15 2010-12-23 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, and device fabricating method
US20110199591A1 (en) * 2009-10-14 2011-08-18 Nikon Corporation Exposure apparatus, exposing method, maintenance method and device fabricating method
KR20120101437A (ko) 2009-11-09 2012-09-13 가부시키가이샤 니콘 노광 장치, 노광 방법, 노광 장치의 메인터넌스 방법, 노광 장치의 조정 방법, 및 디바이스 제조 방법
US9223225B2 (en) 2010-01-08 2015-12-29 Nikon Corporation Liquid immersion member, exposure apparatus, exposure method, and device manufacturing method
US20110222031A1 (en) 2010-03-12 2011-09-15 Nikon Corporation Liquid immersion member, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium
US20120013864A1 (en) 2010-07-14 2012-01-19 Nikon Corporation Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium
US20120013863A1 (en) 2010-07-14 2012-01-19 Nikon Corporation Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium
US8937703B2 (en) 2010-07-14 2015-01-20 Nikon Corporation Liquid immersion member, immersion exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium
US20120012191A1 (en) 2010-07-16 2012-01-19 Nikon Corporation Liquid recovery apparatus, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium
US20120019802A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, immersion exposure apparatus, device fabricating method, program, and storage medium
US20120019804A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, cleaning apparatus, device fabricating method, program, and storage medium
US20120019803A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program, and storage medium
NL2007802A (en) 2010-12-21 2012-06-25 Asml Netherlands Bv A substrate table, a lithographic apparatus and a device manufacturing method.
US20120188521A1 (en) 2010-12-27 2012-07-26 Nikon Corporation Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program and storage medium
US20120162619A1 (en) 2010-12-27 2012-06-28 Nikon Corporation Liquid immersion member, immersion exposure apparatus, exposing method, device fabricating method, program, and storage medium
US20130016329A1 (en) 2011-07-12 2013-01-17 Nikon Corporation Exposure apparatus, exposure method, measurement method, and device manufacturing method
US9329496B2 (en) 2011-07-21 2016-05-03 Nikon Corporation Exposure apparatus, exposure method, method of manufacturing device, program, and storage medium
US9256137B2 (en) 2011-08-25 2016-02-09 Nikon Corporation Exposure apparatus, liquid holding method, and device manufacturing method
US20130050666A1 (en) 2011-08-26 2013-02-28 Nikon Corporation Exposure apparatus, liquid holding method, and device manufacturing method
JP2013102126A (ja) * 2011-10-14 2013-05-23 Fuji Electric Co Ltd 半導体装置の製造方法および半導体装置の製造装置
US20130135594A1 (en) 2011-11-25 2013-05-30 Nikon Corporation Liquid immersion member, immersion exposure apparatus, exposure method, device manufacturing method, program, and recording medium
US9323160B2 (en) 2012-04-10 2016-04-26 Nikon Corporation Liquid immersion member, exposure apparatus, exposure method, device fabricating method, program, and recording medium
US9268231B2 (en) 2012-04-10 2016-02-23 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium
JP6006406B2 (ja) * 2012-05-29 2016-10-12 エーエスエムエル ネザーランズ ビー．ブイ． オブジェクトホルダ及びリソグラフィ装置
US9823580B2 (en) 2012-07-20 2017-11-21 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium
JP2014045090A (ja) * 2012-08-27 2014-03-13 Toshiba Corp 液浸露光装置
US9494870B2 (en) 2012-10-12 2016-11-15 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
US9568828B2 (en) 2012-10-12 2017-02-14 Nikon Corporation Exposure apparatus, exposing method, device manufacturing method, program, and recording medium
JP6119242B2 (ja) 2012-12-27 2017-04-26 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
US9720331B2 (en) 2012-12-27 2017-08-01 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
US9651873B2 (en) 2012-12-27 2017-05-16 Nikon Corporation Liquid immersion member, exposure apparatus, exposing method, method of manufacturing device, program, and recording medium
CN103172271B (zh) * 2013-03-15 2015-11-25 京东方科技集团股份有限公司 一种涂布方法
CN103676263B (zh) * 2013-06-06 2016-05-25 凌晖科技股份有限公司 液晶面板的重制方法
CN104425403B (zh) * 2013-09-02 2017-12-12 日月光半导体制造股份有限公司 半导体封装件、其制造方法及其使用的切割冶具
US10586727B2 (en) 2013-09-25 2020-03-10 Shibaura Mechatronics Corporation Suction stage, lamination device, and method for manufacturing laminated substrate
WO2015052781A1 (ja) 2013-10-08 2015-04-16 株式会社ニコン 液浸部材、露光装置及び露光方法、並びにデバイス製造方法
US9760027B2 (en) * 2013-10-17 2017-09-12 United Microelectronics Corp. Scanner routing method for particle removal
CN105374709B (zh) * 2014-08-07 2019-05-03 东京毅力科创株式会社 接合装置、接合系统以及接合方法
EP3304108A1 (en) 2015-05-26 2018-04-11 Rasco GmbH A boat, assembly&method for handling electronic components
KR20170016547A (ko) 2015-08-03 2017-02-14 삼성전자주식회사 척 테이블 및 그를 포함하는 기판 제조 장치
CN105093588B (zh) * 2015-08-24 2018-05-08 京东方科技集团股份有限公司 一种支撑销及吸附机台
JP6639175B2 (ja) * 2015-09-29 2020-02-05 東京エレクトロン株式会社 乾燥装置及び乾燥処理方法
CN105467779A (zh) * 2016-01-04 2016-04-06 京东方科技集团股份有限公司 一种曝光机及曝光方法
NL2018653A (en) * 2016-05-12 2017-11-15 Asml Netherlands Bv Extraction body for lithographic apparatus
JP6758920B2 (ja) * 2016-06-01 2020-09-23 キヤノン株式会社 チャック、基板保持装置、パターン形成装置、及び物品の製造方法
JP6207671B1 (ja) * 2016-06-01 2017-10-04 キヤノン株式会社 パターン形成装置、基板配置方法及び物品の製造方法
KR102450292B1 (ko) * 2017-06-06 2022-10-04 에이에스엠엘 네델란즈 비.브이. 지지 테이블로부터 대상물을 언로딩하는 방법
CN107272351A (zh) * 2017-07-28 2017-10-20 武汉华星光电技术有限公司 承载装置及具有该承载装置的曝光设备
KR102709422B1 (ko) 2017-10-12 2024-09-25 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치에 사용하기 위한 기판 홀더
EP3756215B1 (en) * 2018-02-20 2024-08-07 Applied Materials, Inc. Method using a patterned vacuum chuck for double-sided processing
JP7198629B2 (ja) * 2018-10-26 2023-01-04 日本特殊陶業株式会社 保持装置
DE102018221128A1 (de) 2018-12-06 2020-06-10 Carl Zeiss Smt Gmbh Verfahren zum Tauschen eines Spiegels in einer Projektionsbelichtungsanlage sowie Lagedaten-Messeinrichtung zum Durchführen des Verfahrens
JP7154995B2 (ja) * 2018-12-17 2022-10-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置
US11500298B2 (en) * 2018-12-21 2022-11-15 Asml Holding N.V. Reticle sub-field thermal control
JP7463032B2 (ja) * 2020-05-22 2024-04-08 株式会社ディスコ 被加工物の保持機構及び加工装置
JP2022068575A (ja) * 2020-10-22 2022-05-10 株式会社ディスコ 洗浄装置
US11728204B2 (en) * 2020-10-23 2023-08-15 Kla Corporation High flow vacuum chuck
EP4206635A4 (en) * 2021-05-28 2024-02-28 BOE Technology Group Co., Ltd. PIEZOELECTRIC SENSOR, PRODUCTION METHOD THEREOF AND DEVICE WITH HAPTIC FEEDBACK
JP2023044244A (ja) * 2021-09-17 2023-03-30 キオクシア株式会社 半導体製造装置
CN113727595B (zh) * 2021-11-01 2022-02-15 广东科视光学技术股份有限公司 一种pcb板自动化曝光设备及方法
JP7514815B2 (ja) * 2021-12-22 2024-07-11 日本碍子株式会社 半導体製造装置用部材
TWI838138B (zh) * 2023-02-24 2024-04-01 南茂科技股份有限公司 清潔裝置
CN121399543A (zh) * 2023-06-19 2026-01-23 Asml荷兰有限公司 衬底支撑件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003052804A1 (en) * 2001-12-17 2003-06-26 Nikon Corporation Substrate holding apparatus, exposure apparatus, and device manufacturing method
TW200301319A (en) * 2001-12-27 2003-07-01 Ebara Corp Substrate processing apparatus and method
TW200402828A (en) * 2002-07-17 2004-02-16 Matsushita Electric Industrial Co Ltd Method and apparatus for picking up semiconductor chip and suction and exfoliation tool used therefor
TW200405425A (en) * 2002-08-06 2004-04-01 Nikon Corp Supporting device and the manufacturing method thereof, stage device and exposure device

Family Cites Families (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
NL8204450A (nl) 1982-11-17 1984-06-18 Philips Nv Verplaatsingsinrichting, in het bijzonder voor het stralingslithografisch behandelen van een substraat.
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DE3340079A1 (de) * 1983-11-05 1985-05-15 Brown, Boveri & Cie Ag, 6800 Mannheim Speicherzellenverbindung
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6144429A (ja) 1984-08-09 1986-03-04 Nippon Kogaku Kk <Nikon> 位置合わせ方法、及び位置合せ装置
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JP2587953B2 (ja) * 1987-09-30 1997-03-05 日立電子エンジニアリング株式会社 レジスト塗布装置
JPH01303720A (ja) * 1988-06-01 1989-12-07 Toshiba Corp チャッキング装置
JP2897355B2 (ja) 1990-07-05 1999-05-31 株式会社ニコン アライメント方法，露光装置，並びに位置検出方法及び装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JP3203719B2 (ja) * 1991-12-26 2001-08-27 株式会社ニコン 露光装置、その露光装置により製造されるデバイス、露光方法、およびその露光方法を用いたデバイス製造方法
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JP3173928B2 (ja) * 1992-09-25 2001-06-04 キヤノン株式会社 基板保持装置、基板保持方法および露光装置
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JP3412704B2 (ja) 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
JP3555230B2 (ja) 1994-05-18 2004-08-18 株式会社ニコン 投影露光装置
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JP3940823B2 (ja) 1994-12-26 2007-07-04 株式会社ニコン ステージ装置及びその制御方法
JPH09306802A (ja) * 1996-05-10 1997-11-28 Nikon Corp 投影露光装置
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JP3709896B2 (ja) 1995-06-15 2005-10-26 株式会社ニコン ステージ装置
KR970072024A (ko) 1996-04-09 1997-11-07 오노 시게오 투영노광장치
JP3709904B2 (ja) 1996-11-14 2005-10-26 株式会社ニコン 投影露光装置
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JPH10135115A (ja) 1996-11-01 1998-05-22 Nikon Corp 露光方法及び基準プレート
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
EP1944654A3 (en) 1996-11-28 2010-06-02 Nikon Corporation An exposure apparatus and an exposure method
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
WO1998028665A1 (en) 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
JP3276601B2 (ja) * 1997-01-22 2002-04-22 東京エレクトロン株式会社 洗浄処理方法及び洗浄処理装置
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
IL136037A0 (en) * 1997-11-12 2001-05-20 Nikon Corp Exposure apparatus, apparatus for manufacturing devices, and method of manufacturing exposure apparatuses
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
US6897963B1 (en) * 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2001044097A (ja) 1999-07-26 2001-02-16 Matsushita Electric Ind Co Ltd 露光装置
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
JP2001183844A (ja) * 1999-12-22 2001-07-06 Sharp Corp 露光方法
JP4700819B2 (ja) * 2000-03-10 2011-06-15 キヤノン株式会社 基板保持装置、半導体製造装置および半導体デバイス製造方法
DE10011130A1 (de) 2000-03-10 2001-09-13 Mannesmann Vdo Ag Entlüftungseinrichtung für einen Kraftstoffbehälter
JP2001332609A (ja) 2000-03-13 2001-11-30 Nikon Corp 基板保持装置及び露光装置
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
JP2001319865A (ja) 2000-05-11 2001-11-16 Canon Inc 基板ステージ装置、露光装置および半導体デバイス製造方法
JP2002231622A (ja) 2000-11-29 2002-08-16 Nikon Corp ステージ装置及び露光装置
JP2002200453A (ja) * 2000-12-28 2002-07-16 Matsushita Electric Ind Co Ltd 塗布装置および塗布方法
US6513796B2 (en) * 2001-02-23 2003-02-04 International Business Machines Corporation Wafer chuck having a removable insert
JP3704064B2 (ja) * 2001-07-05 2005-10-05 東京エレクトロン株式会社 液処理装置および液処理方法
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
US6801301B2 (en) * 2001-10-12 2004-10-05 Canon Kabushiki Kaisha Exposure apparatus
JP4288694B2 (ja) 2001-12-20 2009-07-01 株式会社ニコン 基板保持装置、露光装置及びデバイス製造方法
JP4205054B2 (ja) * 2002-04-24 2009-01-07 株式会社ニコン 露光システム及びデバイス製造方法
KR20050035890A (ko) * 2002-08-23 2005-04-19 가부시키가이샤 니콘 투영 광학계, 포토리소그래피 방법, 노광 장치 및 그 이용방법
JP2004119497A (ja) * 2002-09-24 2004-04-15 Huabang Electronic Co Ltd 半導体製造設備と方法
JP4020741B2 (ja) * 2002-10-01 2007-12-12 東京エレクトロン株式会社 液処理装置における気液分離回収装置
JP4040423B2 (ja) * 2002-10-16 2008-01-30 キヤノン株式会社 基板保持装置
SG121819A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
CN101470360B (zh) * 2002-11-12 2013-07-24 Asml荷兰有限公司 光刻装置和器件制造方法
EP1429188B1 (en) * 2002-11-12 2013-06-19 ASML Netherlands B.V. Lithographic projection apparatus
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
EP1420299B1 (en) * 2002-11-12 2011-01-05 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
SG157962A1 (en) 2002-12-10 2010-01-29 Nikon Corp Exposure apparatus and method for producing device
EP1571697A4 (en) 2002-12-10 2007-07-04 Nikon Corp EXPOSURE SYSTEM AND COMPONENT MANUFACTURING METHOD
SG139733A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486828B1 (en) * 2003-06-09 2013-10-09 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP3104396B1 (en) * 2003-06-13 2018-03-21 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP2843472B1 (en) 2003-07-08 2016-12-07 Nikon Corporation Wafer table for immersion lithography
KR101419192B1 (ko) * 2003-08-29 2014-07-15 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4378136B2 (ja) * 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
WO2005043607A1 (ja) 2003-10-31 2005-05-12 Nikon Corporation 露光装置及びデバイス製造方法
EP3370115A1 (en) 2003-12-03 2018-09-05 Nikon Corporation Exposure apparatus, exposure method and method for producing a device
KR101281397B1 (ko) 2003-12-15 2013-07-02 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
KR101440743B1 (ko) * 2004-01-05 2014-09-17 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP4506674B2 (ja) * 2004-02-03 2010-07-21 株式会社ニコン 露光装置及びデバイス製造方法
US7557900B2 (en) * 2004-02-10 2009-07-07 Nikon Corporation Exposure apparatus, device manufacturing method, maintenance method, and exposure method
CN103558737A (zh) * 2004-06-09 2014-02-05 尼康股份有限公司 基板保持装置、具备其之曝光装置、方法
US8102512B2 (en) * 2004-09-17 2012-01-24 Nikon Corporation Substrate holding device, exposure apparatus, and device manufacturing method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003052804A1 (en) * 2001-12-17 2003-06-26 Nikon Corporation Substrate holding apparatus, exposure apparatus, and device manufacturing method
TW200301319A (en) * 2001-12-27 2003-07-01 Ebara Corp Substrate processing apparatus and method
TW200402828A (en) * 2002-07-17 2004-02-16 Matsushita Electric Industrial Co Ltd Method and apparatus for picking up semiconductor chip and suction and exfoliation tool used therefor
TW200405425A (en) * 2002-08-06 2004-04-01 Nikon Corp Supporting device and the manufacturing method thereof, stage device and exposure device

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