SG116611A1 - Lithographic apparatus and device manufacturing method. - Google Patents

Lithographic apparatus and device manufacturing method.

Info

Publication number
SG116611A1
SG116611A1 SG200502259A SG200502259A SG116611A1 SG 116611 A1 SG116611 A1 SG 116611A1 SG 200502259 A SG200502259 A SG 200502259A SG 200502259 A SG200502259 A SG 200502259A SG 116611 A1 SG116611 A1 SG 116611A1
Authority
SG
Singapore
Prior art keywords
device manufacturing
lithographic apparatus
lithographic
manufacturing
Prior art date
Application number
SG200502259A
Other languages
English (en)
Inventor
Yurievich Kolesnychenk Aleksey
Jacobus Matheus Basel Johannes
Nicolaas Lambertus Dond Sjoerd
Alexander Hoogendam Christiaan
Jansen Hans
Johannes Sophia Maria M Jeroen
Catharinus Hubertus M Johannes
Godfried Peter Peeters Felix
Streefkerk Bob
Johannes Herman Mar Franciscus
Van Santen Helmar
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG116611A1 publication Critical patent/SG116611A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG200502259A 2004-04-14 2005-04-13 Lithographic apparatus and device manufacturing method. SG116611A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/823,777 US7898642B2 (en) 2004-04-14 2004-04-14 Lithographic apparatus and device manufacturing method

Publications (1)

Publication Number Publication Date
SG116611A1 true SG116611A1 (en) 2005-11-28

Family

ID=34940711

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200502259A SG116611A1 (en) 2004-04-14 2005-04-13 Lithographic apparatus and device manufacturing method.

Country Status (8)

Country Link
US (9) US7898642B2 (fr)
EP (1) EP1586948B1 (fr)
JP (8) JP4376203B2 (fr)
KR (1) KR100695554B1 (fr)
CN (2) CN101520611B (fr)
DE (1) DE602005000696T2 (fr)
SG (1) SG116611A1 (fr)
TW (2) TWI427427B (fr)

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG121819A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1571695A4 (fr) * 2002-12-10 2008-10-15 Nikon Corp Appareil d'exposition et son procede de fabrication
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
SG2012087615A (en) 2003-02-26 2015-08-28 Nippon Kogaku Kk Exposure apparatus, exposure method, and method for producing device
SG10201404132YA (en) 2003-04-11 2014-09-26 Nippon Kogaku Kk Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
EP2172809B1 (fr) 2003-04-11 2018-11-07 Nikon Corporation Méthode de nettoyage pour des optiques dans un appareil de lithographie par immersion, et appareil de lithographie par immersion correspondant
JP4552853B2 (ja) * 2003-05-15 2010-09-29 株式会社ニコン 露光装置及びデバイス製造方法
TWI421911B (zh) * 2003-05-23 2014-01-01 尼康股份有限公司 An exposure method, an exposure apparatus, and an element manufacturing method
TWI518742B (zh) 2003-05-23 2016-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
KR101728664B1 (ko) * 2003-05-28 2017-05-02 가부시키가이샤 니콘 노광 방법, 노광 장치, 및 디바이스 제조 방법
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684008B2 (en) 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2738792B1 (fr) * 2003-06-13 2015-08-05 Nikon Corporation Procédé et appareil d'exposition, support de substrat et procédé de fabrication d'un dispositif
KR101134957B1 (ko) 2003-06-19 2012-04-10 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
WO2005006026A2 (fr) * 2003-07-01 2005-01-20 Nikon Corporation Utilisation de fluides specifies isotopiquement comme elements optiques
EP1652003B1 (fr) * 2003-07-08 2015-01-07 Nikon Corporation Table porte-plaquettes pour lithographie par immersion
JP4515385B2 (ja) * 2003-07-09 2010-07-28 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
WO2005006418A1 (fr) * 2003-07-09 2005-01-20 Nikon Corporation Dispositif d'exposition et procede de fabrication
EP1643543B1 (fr) 2003-07-09 2010-11-24 Nikon Corporation Appareil d'exposition, et procede de fabrication d'un dispositif
EP3346485A1 (fr) 2003-07-25 2018-07-11 Nikon Corporation Procédé d'inspection de système optique de projection et appareil d'inspection, et procédé de fabrication de système optique de projection
EP2264534B1 (fr) 2003-07-28 2013-07-17 Nikon Corporation Appareil d'exposition, procédé de fabrication d'un dispositif et procédé de commande de l'appareil
EP1503244A1 (fr) 2003-07-28 2005-02-02 ASML Netherlands B.V. Appareil de projection lithographique et méthode de fabrication d'un dispositif
CN101436001B (zh) * 2003-07-28 2012-04-11 株式会社尼康 曝光装置、器件制造方法
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR101419192B1 (ko) 2003-08-29 2014-07-15 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR20170070264A (ko) 2003-09-03 2017-06-21 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
JP4444920B2 (ja) * 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
SG2014014971A (en) 2003-09-29 2014-04-28 Nippon Kogaku Kk Exposure apparatus, exposure method, and device manufacturing method
EP1672681B8 (fr) 2003-10-08 2011-09-21 Miyagi Nikon Precision Co., Ltd. Appareil d'exposition, procede de transport de substrat, procede d'exposition, et procede de production d'un dispositif
WO2005036623A1 (fr) 2003-10-08 2005-04-21 Zao Nikon Co., Ltd. Appareil et procede de transport de substrat, appareil et procede d'exposition, et procede de production de dispositif
TWI598934B (zh) 2003-10-09 2017-09-11 Nippon Kogaku Kk Exposure apparatus, exposure method, and device manufacturing method
SG148993A1 (en) 2003-12-03 2009-01-29 Nikon Corp Exposure apparatus, exposure method, method for producing device, and optical part
JPWO2005057635A1 (ja) * 2003-12-15 2007-07-05 株式会社ニコン 投影露光装置及びステージ装置、並びに露光方法
JP4720506B2 (ja) 2003-12-15 2011-07-13 株式会社ニコン ステージ装置、露光装置、及び露光方法
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
KR101377815B1 (ko) 2004-02-03 2014-03-26 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8054448B2 (en) 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1774405B1 (fr) 2004-06-04 2014-08-06 Carl Zeiss SMT GmbH Systeme permettant de mesurer la qualite d'une image d'un systeme d'imagerie optique
CN108490741A (zh) 2004-06-09 2018-09-04 株式会社尼康 曝光装置及元件制造方法
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1780772B1 (fr) 2004-07-12 2009-09-02 Nikon Corporation Equipement d'exposition et procede de fabrication de dispositif
WO2006019124A1 (fr) * 2004-08-18 2006-02-23 Nikon Corporation Appareil d’exposition et procédé pour la fabrication du dispositif
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006041091A1 (fr) * 2004-10-12 2006-04-20 Nikon Corporation Procédé d’entretien d’un appareil d’exposition, appareil d’exposition, procédé de fabrication du dispositif et élément de récupération de liquide pour l’entretien d’un appareil d’exposition par immersion
US7119876B2 (en) 2004-10-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7414699B2 (en) * 2004-11-12 2008-08-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7397533B2 (en) 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7365827B2 (en) * 2004-12-08 2008-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1681597B1 (fr) 2005-01-14 2010-03-10 ASML Netherlands B.V. Appareil lithographique et procédé de fabrication d'un dispositif
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
KR20160135859A (ko) 2005-01-31 2016-11-28 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
US7684010B2 (en) * 2005-03-09 2010-03-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
WO2007029829A1 (fr) * 2005-09-09 2007-03-15 Nikon Corporation Appareil et procédé d’exposition, et procédé de production de dispositif
US7462429B2 (en) * 2005-10-12 2008-12-09 Asml Netherlands B.V. Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate
KR100659451B1 (ko) 2005-11-18 2006-12-19 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 웨이퍼 밀봉 메카니즘을 가지는 개선된 이머전 리소그래피시스템
US7633073B2 (en) 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7420194B2 (en) * 2005-12-27 2008-09-02 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8027019B2 (en) * 2006-03-28 2011-09-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN102298274A (zh) * 2006-05-18 2011-12-28 株式会社尼康 曝光方法及装置、维护方法、以及组件制造方法
US20070273856A1 (en) * 2006-05-25 2007-11-29 Nikon Corporation Apparatus and methods for inhibiting immersion liquid from flowing below a substrate
US7532309B2 (en) * 2006-06-06 2009-05-12 Nikon Corporation Immersion lithography system and method having an immersion fluid containment plate for submerging the substrate to be imaged in immersion fluid
US20080043211A1 (en) * 2006-08-21 2008-02-21 Nikon Corporation Apparatus and methods for recovering fluid in immersion lithography
TWI596444B (zh) 2006-08-31 2017-08-21 尼康股份有限公司 Exposure method and device, and device manufacturing method
CN104375390B (zh) 2006-08-31 2017-10-13 株式会社尼康 移动体驱动系统及方法、图案形成装置及方法、曝光装置及方法、组件制造方法
EP3279738A1 (fr) 2006-08-31 2018-02-07 Nikon Corporation Procédé et système d'entraînement de corps mobile, procédé de formation de motif et appareil, procédé et appareil d'exposition et procédé de fabrication d'un dispositif
TWI574125B (zh) 2006-09-01 2017-03-11 尼康股份有限公司 Mobile body driving method and moving body driving system, pattern forming method and apparatus, exposure method and apparatus, and component manufacturing method
KR101444632B1 (ko) 2006-09-01 2014-09-26 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 디바이스 제조 방법, 그리고 캘리브레이션 방법
JP5089143B2 (ja) * 2006-11-20 2012-12-05 キヤノン株式会社 液浸露光装置
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US8654305B2 (en) 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US8514365B2 (en) * 2007-06-01 2013-08-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8264662B2 (en) * 2007-06-18 2012-09-11 Taiwan Semiconductor Manufacturing Company, Ltd. In-line particle detection for immersion lithography
US8705010B2 (en) 2007-07-13 2014-04-22 Mapper Lithography Ip B.V. Lithography system, method of clamping and wafer table
TWI514090B (zh) * 2007-07-13 2015-12-21 Mapper Lithography Ip Bv 微影系統及用於支撐晶圓的晶圓台
CN105301918B (zh) 2007-07-18 2018-02-16 株式会社尼康 曝光装置、曝光方法、及元件制造方法
KR100956221B1 (ko) * 2007-10-12 2010-05-04 삼성엘이디 주식회사 화학 기상 증착 장치용 서셉터
KR101448152B1 (ko) * 2008-03-26 2014-10-07 삼성전자주식회사 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서
JP5097166B2 (ja) 2008-05-28 2012-12-12 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置の動作方法
EP2131242A1 (fr) * 2008-06-02 2009-12-09 ASML Netherlands B.V. Table de substrat, appareil lithographique et procédé de fabrication d'un dispositif
JP2010140958A (ja) * 2008-12-09 2010-06-24 Canon Inc 露光装置及びデバイス製造方法
US9312159B2 (en) * 2009-06-09 2016-04-12 Nikon Corporation Transport apparatus and exposure apparatus
JP5058305B2 (ja) * 2009-06-19 2012-10-24 エーエスエムエル ネザーランズ ビー．ブイ． 液浸リソグラフィ装置、液体閉じ込め構造体、液浸リソグラフィ装置用の投影システムの最終エレメント、および基板テーブル
JP5507392B2 (ja) * 2009-09-11 2014-05-28 エーエスエムエル ネザーランズ ビー．ブイ． シャッター部材、リソグラフィ装置及びデバイス製造方法
NL2006127A (en) 2010-02-17 2011-08-18 Asml Netherlands Bv A substrate table, a lithographic apparatus and a method for manufacturing a device using a lithographic apparatus.
JP5269128B2 (ja) * 2010-03-12 2013-08-21 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置および方法
US8760630B2 (en) 2011-01-01 2014-06-24 Canon Kabushiki Kaisha Exposure apparatus and method of manufacturing device
CN102736433A (zh) * 2011-04-08 2012-10-17 上海微电子装备有限公司 一种工件台漏水保护装置
JP2018101719A (ja) * 2016-12-21 2018-06-28 株式会社ディスコ 排水機構
JP6473899B1 (ja) 2017-12-29 2019-02-27 株式会社Ｉ・Ｐソリューションズ 複合コードパターン、生成装置、読み取り装置、方法およびプログラム

Family Cites Families (242)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE206607C (fr)
DE224448C (fr)
DE221563C (fr)
DE242880C (fr)
US743119A (en) * 1902-12-16 1903-11-03 James Henry Watson Jr Combined ruler and blotter.
GB1242527A (en) * 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
US3573976A (en) 1967-11-17 1971-04-06 United Carr Inc Method of making coaxial cable
US3573975A (en) * 1968-07-10 1971-04-06 Ibm Photochemical fabrication process
EP0023231B1 (fr) 1979-07-27 1982-08-11 Tabarelli, Werner, Dr. Procédé de lithographic optique et dispositif pour copier un dessin sur une plaquette semiconductrice
FR2474708B1 (fr) 1980-01-24 1987-02-20 Dme Procede de microphotolithographie a haute resolution de traits
JPS5754317A (en) * 1980-09-19 1982-03-31 Hitachi Ltd Method and device for forming pattern
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4390273A (en) * 1981-02-17 1983-06-28 Censor Patent-Und Versuchsanstalt Projection mask as well as a method and apparatus for the embedding thereof and projection printing system
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
DD206607A1 (de) 1982-06-16 1984-02-01 Mikroelektronik Zt Forsch Tech Verfahren und vorrichtung zur beseitigung von interferenzeffekten
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD242880A1 (de) 1983-01-31 1987-02-11 Kuch Karl Heinz Einrichtung zur fotolithografischen strukturuebertragung
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD221583B1 (de) 1984-02-15 1987-08-26 Werk Fernsehelektronik Veb Schaltungsanordnung zur erzeugung einer unsymmetrischen vergleichssaegezahnspannung
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPS6266326A (ja) 1985-09-19 1987-03-25 Fujitsu Ltd 日本語デ−タ整列処理方式
JPS6265326U (fr) 1985-10-16 1987-04-23
JPS62121417A (ja) 1985-11-22 1987-06-02 Hitachi Ltd 液浸対物レンズ装置
JPS62121417U (fr) 1986-01-24 1987-08-01
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPS63157419U (fr) 1987-03-31 1988-10-14
US5040020A (en) * 1988-03-31 1991-08-13 Cornell Research Foundation, Inc. Self-aligned, high resolution resonant dielectric lithography
JPH0652707B2 (ja) * 1988-10-11 1994-07-06 キヤノン株式会社 面位置検出方法
JPH03209479A (ja) 1989-09-06 1991-09-12 Sanee Giken Kk 露光方法
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04306915A (ja) 1991-04-04 1992-10-29 Nec Corp レベル変換回路
US5121258A (en) 1991-08-12 1992-06-09 Eastman Kodak Company Apparatus for anhysteretic duplication of a flexible magnetic disk
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるｌｓｉ製造縮小投影露光装置の光学系
JPH05304072A (ja) 1992-04-08 1993-11-16 Nec Corp 半導体装置の製造方法
JPH06124873A (ja) * 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JPH06181167A (ja) 1992-10-14 1994-06-28 Canon Inc 像形成方法及び該方法を用いてデバイスを製造する方法及び該方法に用いるフォトマスク
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JPH06181157A (ja) 1992-12-15 1994-06-28 Nikon Corp 低発塵性の装置
JP2520833B2 (ja) 1992-12-21 1996-07-31 東京エレクトロン株式会社 浸漬式の液処理装置
KR100300618B1 (ko) * 1992-12-25 2001-11-22 오노 시게오 노광방법,노광장치,및그장치를사용하는디바이스제조방법
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
JPH08316124A (ja) * 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US5826043A (en) 1995-06-07 1998-10-20 Ast Research, Inc. Docking station with serially accessed memory that is powered by a portable computer for identifying the docking station
US6104687A (en) * 1996-08-26 2000-08-15 Digital Papyrus Corporation Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JPH10116760A (ja) 1996-10-08 1998-05-06 Nikon Corp 露光装置及び基板保持装置
JP2872162B2 (ja) 1996-11-28 1999-03-17 埼玉日本電気株式会社 無音報知および可聴報知機能を有する携帯無線機
JP3612920B2 (ja) 1997-02-14 2005-01-26 ソニー株式会社 光学記録媒体の原盤作製用露光装置
JPH10255319A (ja) * 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JPH10258249A (ja) * 1997-03-19 1998-09-29 Dainippon Screen Mfg Co Ltd 回転式基板処理装置
JPH10266319A (ja) 1997-03-19 1998-10-06 Ishida Tekko Kk コンクリート溝開口部の蓋体受け枠構造体
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
US20040221844A1 (en) * 1997-06-17 2004-11-11 Hunt Peter John Humidity controller
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
JPH1140484A (ja) * 1997-07-22 1999-02-12 Dainippon Screen Mfg Co Ltd ノズルキャップ、基板処理装置用カップおよび排液配管
JPH11166990A (ja) 1997-12-04 1999-06-22 Nikon Corp ステージ装置及び露光装置並びに走査型露光装置
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
AU1505699A (en) 1997-12-12 1999-07-05 Nikon Corporation Projection exposure method and projection aligner
DE19813168A1 (de) 1998-03-25 1999-09-30 Siemens Ag Verfahren zur Datenübertragung, Codierer sowie Decodierer
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
WO2000008339A1 (fr) 1998-08-06 2000-02-17 Mannesmann Rexroth Ag Hydrotransformateur
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2000147788A (ja) * 1998-11-11 2000-05-26 Sony Corp 現像装置
TWI242111B (en) * 1999-04-19 2005-10-21 Asml Netherlands Bv Gas bearings for use in vacuum chambers and their application in lithographic projection apparatus
JP2001091840A (ja) 1999-09-20 2001-04-06 Olympus Optical Co Ltd 顕微鏡システム
JP4504479B2 (ja) 1999-09-21 2010-07-14 オリンパス株式会社 顕微鏡用液浸対物レンズ
SE518807C2 (sv) * 1999-11-09 2002-11-26 Koncentra Verkst S Ab Förfarande och anordning för att belägga ett kolvringsämne med ett skikt samt kolvring försedd med ett påvärmt beläggningsskikt
US7187503B2 (en) * 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6995930B2 (en) * 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
JP2001272604A (ja) * 2000-03-27 2001-10-05 Olympus Optical Co Ltd 液浸対物レンズおよびそれを用いた光学装置
JP2001320837A (ja) * 2000-05-02 2001-11-16 Tokyo Electron Ltd 電源装置およびそれを用いた液処理装置
US6618209B2 (en) 2000-08-08 2003-09-09 Olympus Optical Co., Ltd. Optical apparatus
TW591653B (en) * 2000-08-08 2004-06-11 Koninkl Philips Electronics Nv Method of manufacturing an optically scannable information carrier
KR100866818B1 (ko) * 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
WO2002091078A1 (fr) 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Procedes et appareil utilisant un support d'adaptation d'indice
US6600547B2 (en) 2001-09-24 2003-07-29 Nikon Corporation Sliding seal
JP2006502558A (ja) * 2001-11-07 2006-01-19 アプライド　マテリアルズ　インコーポレイテッド 光学式スポット格子アレイ印刷装置
JP2003173975A (ja) 2001-12-05 2003-06-20 Sony Corp 反応管のベーキング方法及び気相成長装置
JP3945569B2 (ja) * 2001-12-06 2007-07-18 東京応化工業株式会社 現像装置
DE10210899A1 (de) * 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
DE10229818A1 (de) * 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
US7092069B2 (en) * 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
KR20050035890A (ko) 2002-08-23 2005-04-19 가부시키가이샤 니콘 투영 광학계, 포토리소그래피 방법, 노광 장치 및 그 이용방법
US6954993B1 (en) * 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
US6988326B2 (en) * 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US7093375B2 (en) * 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
US7017017B2 (en) 2002-11-08 2006-03-21 Intel Corporation Memory controllers with interleaved mirrored memory modes
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
EP1420300B1 (fr) 2002-11-12 2015-07-29 ASML Netherlands B.V. Appareil lithographique et méthode de fabrication d'un dispositif
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3977324B2 (ja) * 2002-11-12 2007-09-19 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置
CN101382738B (zh) * 2002-11-12 2011-01-12 Asml荷兰有限公司 光刻投射装置
EP1429188B1 (fr) 2002-11-12 2013-06-19 ASML Netherlands B.V. Appareil lithographique à projection
SG121819A1 (en) * 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG131766A1 (en) * 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10253679A1 (de) * 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
SG121829A1 (en) 2002-11-29 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10258718A1 (de) * 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
EP1571695A4 (fr) * 2002-12-10 2008-10-15 Nikon Corp Appareil d'exposition et son procede de fabrication
AU2003289272A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Surface position detection apparatus, exposure method, and device porducing method
WO2004053950A1 (fr) 2002-12-10 2004-06-24 Nikon Corporation Appareil d'exposition et procede de fabrication du dispositif
FR2848317B1 (fr) 2002-12-10 2007-04-27 France Telecom Procede de controle d'un titre d'autorisation d'acces a un service ou d'acquisition d'un produit
DE10257766A1 (de) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
JP4179283B2 (ja) 2002-12-10 2008-11-12 株式会社ニコン 光学素子及びその光学素子を用いた投影露光装置
AU2003289271A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus, exposure method and method for manufacturing device
JP4529433B2 (ja) * 2002-12-10 2010-08-25 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
KR20130010039A (ko) 2002-12-10 2013-01-24 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
SG171468A1 (en) 2002-12-10 2011-06-29 Nikon Corp Exposure apparatus and method for producing device
JP4232449B2 (ja) 2002-12-10 2009-03-04 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
US6992750B2 (en) * 2002-12-10 2006-01-31 Canon Kabushiki Kaisha Exposure apparatus and method
JP2004193262A (ja) 2002-12-10 2004-07-08 Tokyo Electron Ltd 絶縁性材料および絶縁膜形成方法
JP4352874B2 (ja) 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
WO2004053954A1 (fr) 2002-12-10 2004-06-24 Nikon Corporation Dispositif d'exposition, et procede de fabrication
AU2003302831A1 (en) 2002-12-10 2004-06-30 Nikon Corporation Exposure method, exposure apparatus and method for manufacturing device
JP4235177B2 (ja) 2002-12-11 2009-03-11 富士通株式会社 バックアップシステム，バックアップ制御装置，バックアップデータ管理方法，バックアップ制御プログラムおよび同プログラムを記録したコンピュータ読取可能な記録媒体
ATE424026T1 (de) 2002-12-13 2009-03-15 Koninkl Philips Electronics Nv Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht
US6786579B2 (en) * 2002-12-18 2004-09-07 Xerox Corporation Device for dispensing particulate matter and system using the same
US7010958B2 (en) * 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
DE60314668T2 (de) 2002-12-19 2008-03-06 Koninklijke Philips Electronics N.V. Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
WO2004057590A1 (fr) 2002-12-19 2004-07-08 Koninklijke Philips Electronics N.V. Procede et dispositif d'eclairage de points sur une couche
WO2004063955A2 (fr) 2002-12-26 2004-07-29 Sap Aktiengesellschaft Integration de controle logistique et financier de projets
US6781670B2 (en) * 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
EP1437668B1 (fr) 2003-01-08 2006-11-15 Rolf Krause Procédé pour le paiement de marchandises ou de services sans argent liquide au moyen d'un terminal radio mobile
ES2237256B1 (es) 2003-01-13 2006-02-01 Servicios Tecnologicos Para La Peritacion, S.L. Sistema de peritaje virtual.
JP2004264880A (ja) 2003-01-14 2004-09-24 Hitachi Ltd 受注支援システムおよび受注支援方法
AU2003900153A0 (en) 2003-01-15 2003-01-30 Super Internet Site System Pty Ltd Spatial marketing system
US20050120072A1 (en) 2003-01-15 2005-06-02 Yukihisa Miyazaki Company-to-company data cooperation system
JP4363179B2 (ja) 2003-01-23 2009-11-11 タカタ株式会社 エアバッグ及びエアバッグ装置
US7090964B2 (en) 2003-02-21 2006-08-15 Asml Holding N.V. Lithographic printing with polarized light
US6943941B2 (en) * 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7206059B2 (en) * 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
JP4353179B2 (ja) 2003-03-25 2009-10-28 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
WO2004093159A2 (fr) 2003-04-09 2004-10-28 Nikon Corporation Systeme de regulation des fluides pour lithographie par immersion
KR101369016B1 (ko) 2003-04-10 2014-02-28 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
JP4656057B2 (ja) 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
JP4488005B2 (ja) 2003-04-10 2010-06-23 株式会社ニコン 液浸リソグラフィ装置用の液体を捕集するための流出通路
CN101813892B (zh) * 2003-04-10 2013-09-25 株式会社尼康 沉浸式光刻装置及使用光刻工艺制造微器件的方法
SG10201404132YA (en) 2003-04-11 2014-09-26 Nippon Kogaku Kk Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
EP2172809B1 (fr) 2003-04-11 2018-11-07 Nikon Corporation Méthode de nettoyage pour des optiques dans un appareil de lithographie par immersion, et appareil de lithographie par immersion correspondant
WO2004092830A2 (fr) 2003-04-11 2004-10-28 Nikon Corporation Systeme de projection et de recuperation de liquides pour lithographie par immersion
JP2006523958A (ja) 2003-04-17 2006-10-19 株式会社ニコン 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造
WO2004096135A2 (fr) 2003-04-24 2004-11-11 Merck & Co., Inc. Inhibiteurs de l'activite de l'akt
JP4025683B2 (ja) * 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
JP4146755B2 (ja) * 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
JP4552853B2 (ja) * 2003-05-15 2010-09-29 株式会社ニコン 露光装置及びデバイス製造方法
JP2005277363A (ja) 2003-05-23 2005-10-06 Nikon Corp 露光装置及びデバイス製造方法
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684008B2 (en) 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317504B2 (en) 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4054285B2 (ja) * 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
JP4084710B2 (ja) * 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
EP2738792B1 (fr) 2003-06-13 2015-08-05 Nikon Corporation Procédé et appareil d'exposition, support de substrat et procédé de fabrication d'un dispositif
US6867844B2 (en) * 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4029064B2 (ja) * 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
JP4084712B2 (ja) * 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
WO2005006026A2 (fr) 2003-07-01 2005-01-20 Nikon Corporation Utilisation de fluides specifies isotopiquement comme elements optiques
EP1652003B1 (fr) * 2003-07-08 2015-01-07 Nikon Corporation Table porte-plaquettes pour lithographie par immersion
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
EP2264534B1 (fr) 2003-07-28 2013-07-17 Nikon Corporation Appareil d'exposition, procédé de fabrication d'un dispositif et procédé de commande de l'appareil
JP4492239B2 (ja) * 2003-07-28 2010-06-30 株式会社ニコン 露光装置及びデバイス製造方法、並びに露光装置の制御方法
JP2005057636A (ja) * 2003-08-07 2005-03-03 Matsushita Electric Ind Co Ltd Ｃｒｔ表示装置
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7579135B2 (en) * 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7085075B2 (en) * 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
JP4524670B2 (ja) * 2003-08-21 2010-08-18 株式会社ニコン 露光装置、及びデバイス製造方法
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
KR101419192B1 (ko) * 2003-08-29 2014-07-15 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US6954256B2 (en) * 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
TWI424464B (zh) * 2003-08-29 2014-01-21 尼康股份有限公司 A liquid recovery device, an exposure device, an exposure method, and an element manufacturing method
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
EP1513032A1 (fr) 2003-09-02 2005-03-09 The Swatch Group Management Services AG Objet à carcasse métallique comprenant un module électronique pour la mémorisation d'informations, et module électronique pour un tel objet
KR20170070264A (ko) 2003-09-03 2017-06-21 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
JP3870182B2 (ja) * 2003-09-09 2007-01-17 キヤノン株式会社 露光装置及びデバイス製造方法
JP4444920B2 (ja) * 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
US6961186B2 (en) * 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
JP4513299B2 (ja) * 2003-10-02 2010-07-28 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
JP4515209B2 (ja) * 2003-10-02 2010-07-28 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US7369217B2 (en) * 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
US7678527B2 (en) * 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
WO2005043607A1 (fr) 2003-10-31 2005-05-12 Nikon Corporation Appareil d'expostion et procede de production de dispositif
JP2005159322A (ja) * 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
TWI361450B (en) 2003-10-31 2012-04-01 Nikon Corp Platen, stage device, exposure device and exposure method
US7924397B2 (en) * 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005054953A2 (fr) 2003-11-24 2005-06-16 Carl-Zeiss Smt Ag Dispositif de support d'element optique dans un objectif
WO2005054963A1 (fr) 2003-12-02 2005-06-16 Fujitsu Limited Procede de commande d'heure de generation d'alarme, appareil electronique et programme informatique
US7125652B2 (en) * 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
JP4513534B2 (ja) * 2003-12-03 2010-07-28 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
EP1691980A4 (fr) * 2003-12-03 2009-05-27 Commw Scient Ind Res Org Procedes de production de materiau d'emballage servant au transport et au stockage de marchandises perissables
SG148993A1 (en) 2003-12-03 2009-01-29 Nikon Corp Exposure apparatus, exposure method, method for producing device, and optical part
US20050123856A1 (en) 2003-12-05 2005-06-09 Roberts David H. Process for the manufacture of flexographic printing plates
JP4720506B2 (ja) 2003-12-15 2011-07-13 株式会社ニコン ステージ装置、露光装置、及び露光方法
WO2005059977A1 (fr) * 2003-12-16 2005-06-30 Nikon Corporation Appareil a etage, appareil et procede d'exposition
JP4106017B2 (ja) * 2003-12-19 2008-06-25 東京エレクトロン株式会社 現像装置及び現像方法
JP2005183656A (ja) * 2003-12-19 2005-07-07 Canon Inc 露光装置
US7394521B2 (en) * 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
FR2864743B1 (fr) 2003-12-24 2006-03-03 Sagem Procede de generation de base de temps dans un telephone mobile
JP2005191394A (ja) * 2003-12-26 2005-07-14 Canon Inc 露光方法及び装置
KR101748504B1 (ko) * 2004-01-05 2017-06-16 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP2005209705A (ja) * 2004-01-20 2005-08-04 Nikon Corp 露光装置及びデバイス製造方法
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4513590B2 (ja) * 2004-02-19 2010-07-28 株式会社ニコン 光学部品及び露光装置
JP2005243686A (ja) * 2004-02-24 2005-09-08 Ebara Corp 露光装置および露光方法
JP2005242080A (ja) 2004-02-27 2005-09-08 Victor Co Of Japan Ltd ワイヤグリッドポラライザ
JP2005259870A (ja) * 2004-03-10 2005-09-22 Nikon Corp 基板保持装置、ステージ装置及び露光装置並びに露光方法
JP2005268700A (ja) * 2004-03-22 2005-09-29 Nikon Corp ステージ装置及び露光装置
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2005302880A (ja) * 2004-04-08 2005-10-27 Canon Inc 液浸式露光装置
JP2005302860A (ja) 2004-04-08 2005-10-27 Nikon Corp 極短紫外線光学系用光学素子及び極短紫外線露光装置
US7898642B2 (en) * 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
BRPI0418960B1 (pt) 2004-07-21 2020-11-03 Alltech, Inc. composição formulada para administração oral para redução dos efeitos prejudiciais de uma infecção em um animal aviário causada por um organismo protozoário de uma espécie de eimeria
WO2006015283A2 (fr) 2004-07-29 2006-02-09 Threshold Pharmaceuticals, Inc. Traitement de l'hyperplasie prostatique benigne
US20060026755A1 (en) 2004-08-05 2006-02-09 Bain Colin C Patient lift with integrated foot push pad
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2006022266A1 (fr) 2004-08-25 2006-03-02 Kureha Corporation Film multicouche rétrecissable et son procédé de production
PE20060653A1 (es) 2004-08-31 2006-09-27 Glaxo Group Ltd Derivados triciclicos condensados como moduladores del receptor 5-ht1
US20090171646A1 (en) 2004-08-31 2009-07-02 Freescale Semiconductor , Inc. Method for estimating power consumption
JP4667025B2 (ja) 2004-12-03 2011-04-06 日本ミクロコーティング株式会社 研磨スラリー及び方法
JP2006173527A (ja) 2004-12-20 2006-06-29 Sony Corp 露光装置
JP4381317B2 (ja) 2005-01-31 2009-12-09 株式会社東芝 コンテンツ再生装置、コンテンツ再生方法及びプログラム
JP2006243686A (ja) 2005-02-04 2006-09-14 Ricoh Co Ltd 画像形成装置
JP4655718B2 (ja) 2005-03-25 2011-03-23 日本電気株式会社 コンピュータシステム及びその制御方法
CN101452103B (zh) 2007-11-30 2011-03-23 鸿富锦精密工业（深圳）有限公司 镜头模组

Also Published As

Publication number Publication date
US10234768B2 (en) 2019-03-19
CN1684001A (zh) 2005-10-19
JP2009060127A (ja) 2009-03-19
CN101520611A (zh) 2009-09-02
US7898642B2 (en) 2011-03-01
DE602005000696D1 (de) 2007-04-26
US20140253890A1 (en) 2014-09-11
JP5202228B2 (ja) 2013-06-05
EP1586948A1 (fr) 2005-10-19
CN101520611B (zh) 2013-06-05
JP5529903B2 (ja) 2014-06-25
EP1586948B1 (fr) 2007-03-14
TW200604755A (en) 2006-02-01
US20160085161A1 (en) 2016-03-24
JP4376203B2 (ja) 2009-12-02
TWI427427B (zh) 2014-02-21
US20190212662A1 (en) 2019-07-11
JP2009033200A (ja) 2009-02-12
US20120013867A1 (en) 2012-01-19
CN100495214C (zh) 2009-06-03
US8704998B2 (en) 2014-04-22
JP2009044186A (ja) 2009-02-26
US20180246418A1 (en) 2018-08-30
JP5300945B2 (ja) 2013-09-25
JP2009044185A (ja) 2009-02-26
JP2011249854A (ja) 2011-12-08
TWI312911B (en) 2009-08-01
KR100695554B1 (ko) 2007-03-14
US10705432B2 (en) 2020-07-07
JP5027091B2 (ja) 2012-09-19
JP2012084926A (ja) 2012-04-26
JP5027092B2 (ja) 2012-09-19
JP5179317B2 (ja) 2013-04-10
US9829799B2 (en) 2017-11-28
US9568840B2 (en) 2017-02-14
KR20060045679A (ko) 2006-05-17
JP2005303316A (ja) 2005-10-27
US9207543B2 (en) 2015-12-08
US20050231694A1 (en) 2005-10-20
US20170153557A1 (en) 2017-06-01
US9989861B2 (en) 2018-06-05
US20110116061A1 (en) 2011-05-19
TW200921295A (en) 2009-05-16
US20180081282A1 (en) 2018-03-22
JP2009033201A (ja) 2009-02-12
US8755033B2 (en) 2014-06-17
DE602005000696T2 (de) 2008-01-24

Similar Documents

Publication Publication Date Title
SG116611A1 (en) Lithographic apparatus and device manufacturing method.
TWI318725B (en) Lithographic apparatus and device manufacturing method
TWI319126B (en) Lithographic apparatus and device manufacturing method
SG139771A1 (en) Lithographic apparatus and device manufacturing method
SG114712A1 (en) Lithographic apparatus and device manufacturing method
SG120255A1 (en) Lithographic apparatus and device manufacturing method
SG117565A1 (en) Lithographic apparatus and device manufacturing method
SG117591A1 (en) Lithographic apparatus and device manufacturing method
SG115816A1 (en) Lithographic apparatus and device manufacturing method
SG118329A1 (en) Lithographic apparatus and device manufacturing method
SG138618A1 (en) Lithographic apparatus and device manufacturing method
SG121969A1 (en) Lithographic apparatus and device manufacturing method
SG116555A1 (en) Lithographic apparatus and device manufacturing method.
SG116549A1 (en) Lithographic apparatus and device manufacturing method.
SG123749A1 (en) Lithographic apparatus and device manufacturing method
SG121967A1 (en) Lithographic apparatus and device manufacturing method
SG123713A1 (en) Lithographic apparatus and device manufacturing method
SG123752A1 (en) Lithographic apparatus and device manufacturing method
SG123687A1 (en) Lithographic apparatus and device manufacturing method
SG118419A1 (en) Lithographic apparatus and device manufacturing method
SG115813A1 (en) Lithographic apparatus and device manufacturing method
SG123688A1 (en) Lithographic apparatus and device manufacturing method
SG123690A1 (en) Lithographic apparatus and device manufacturing method
SG122045A1 (en) Lithographic apparatus and device manufacturing method
TWI315451B (en) Lithographic apparatus and device manufacturing method