JP5300945B2 - リソグラフィック装置及びデバイス製造方法 - Google Patents
リソグラフィック装置及びデバイス製造方法 Download PDFInfo
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- JP5300945B2 JP5300945B2 JP2011192774A JP2011192774A JP5300945B2 JP 5300945 B2 JP5300945 B2 JP 5300945B2 JP 2011192774 A JP2011192774 A JP 2011192774A JP 2011192774 A JP2011192774 A JP 2011192774A JP 5300945 B2 JP5300945 B2 JP 5300945B2
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
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- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Description
放射ビームを提供するようになされたイルミネータと、
放射ビームの断面にパターンを付与するようになされたパターン化デバイスを保持するようになされた支持構造と、
基板を保持するようになされた基板テーブルと、
パターン化されたビームを基板の目標部分に投射するようになされた投影システムと、
投影システムと基板、基板テーブル若しくはその両方の間の空間の少なくとも一部を充填するべく、基板、基板テーブル若しくはその両方の局所領域に液体を供給するようになされた液体供給システムと
を備えたリソグラフィック装置であって、
基板テーブルが、液体を収集するようになされた、間隔を隔てて基板を取り囲んでいる障壁を備えたリソグラフィック装置が提供される。
投影システムと基板、基板テーブル若しくはその両方の間の空間の少なくとも一部を充填するべく、基板、基板テーブル若しくはその両方の局部領域に液体を提供するステップと、
パターン化された放射ビームを投影システムを使用して液体を介して基板の目標部分に投射するステップと、
間隔を隔てて基板を取り囲んでいる障壁を使用して液体を収集するステップと
を含むデバイス製造方法が提供される。
−投影放射(たとえばUV放射)ビームPBを提供するための照明システム(イルミネータ)ILと、
−パターン化デバイス(たとえばマスク)MAを支持するための、パターン化デバイスをアイテムPLに対して正確に位置決めするための第1の位置決めデバイスPMに接続された第1の支持構造(たとえばマスク・テーブル)MTと、
−基板(たとえばレジスト被覆ウェハ)Wを保持するための、基板をアイテムPLに対して正確に位置決めするための第2の位置決めデバイスに接続された基板テーブル(たとえばウェハ・テーブル)WTと、
−パターン化デバイスMAによって投影ビームPBに付与されたパターンを基板Wの目標部分C(たとえば1つ又は複数のダイからなる)に画像化するための投影システム(たとえば屈折投影レンズ)PLと
を備えている。
1.ステップ・モードでは、マスク・テーブルMT及び基板テーブルWTが基本的に静止状態に維持され、投影ビームに付与されたパターン全体が目標部分Cに1回で投影される(すなわち単一静止露光)。次に、基板テーブルWTがX及び/又はY方向にシフトされ、異なる目標部分Cが露光される。ステップ・モードでは、露光視野の最大サイズによって、単一静止露光で画像化される目標部分Cのサイズが制限される。
2.走査モードでは、投影ビームに付与されたパターンが目標部分Cに投影されている間、マスク・テーブルMT及び基板テーブルWTが同期走査される(すなわち単一動的露光)。マスク・テーブルMTに対する基板テーブルWTの速度及び方向は、投影システムPLの倍率(縮小率)及び画像反転特性によって決定される。走査モードでは、露光視野の最大サイズによって単一動的露光における目標部分の幅(非走査方向の)が制限され、また、走査運動の長さによって目標部分の高さ(走査方向の)が左右される。
3.その他のモードでは、プログラム可能パターン化デバイスを保持するべくマスク・テーブルMTが基本的に静止状態に維持され、投影ビームに付与されたパターンが目標部分Cに投影されている間、基板テーブルWTが移動若しくは走査される。このモードでは、通常、パルス放射源が使用され、走査中、基板テーブルWTが移動する毎に、或いは連続する放射パルスと放射パルスの間に、必要に応じてプログラム可能パターン化デバイスが更新される。この動作モードは、上で参照したタイプのプログラム可能ミラー・アレイなどのプログラム可能パターン化デバイスを利用しているマスクレス・リソグラフィに容易に適用することができる。
CO コンデンサ
IF 位置センサ
IL イルミネータ
IN インテグレータ
MA マスク
M1、M2 マスク位置合せマーク
MT マスク・テーブル
P1、P2 基板位置合せマーク
PB 投影ビーム
PL 投影システム
W 基板
WT 基板テーブル
Claims (6)
- テーブルと、
パターン化されたビームを投射する投影システムと、
前記投影システムと前記テーブル上に配置された対象、前記テーブル若しくはその両方との間の空間の少なくとも一部を充填するべく、前記対象、前記テーブル若しくはその両方の局所領域に液体を供給する液体供給システムとを備えたリソグラフィック装置であって、
前記テーブルが、
前記テーブルの上面に形成されて間隔を隔てて前記対象を取り囲んで液体を収集する障壁であって、前記対象の外周縁を取り囲んでいる排液溝の外側に配置されている障壁と、
前記テーブル上で前記排液溝と前記障壁との間に配置されている少なくとも1つのセンサとを備える、
リソグラフィック装置。 - 前記障壁は、前記テーブルの上面の直線的な外周縁に平行に直線的に延びる、請求項1に記載のリソグラフィック装置。
- 前記障壁は、前記テーブルの上面に凹所をなした溝を備える、請求項1又は2に記載のリソグラフィック装置。
- 前記溝は非円形である、請求項3に記載のリソグラフィック装置。
- 前記障壁は、前記テーブルの上面から上方に突き出て前記溝の外周縁を連続的に取り囲む突起をさらに備える、請求項3又は4に記載のリソグラフィック装置。
- 投影システムとテーブル上に配置された対象、前記テーブル若しくはその両方との間の空間の少なくとも一部を充填するべく、前記対象、前記テーブル若しくはその両方の局所領域に液体を提供するステップと、
パターン化されたビームを前記投影システムを使用して前記液体を介して前記テーブルに投射するステップと、
前記テーブルの上面に形成されて間隔を隔てて前記対象を取り囲んでいる障壁を使用して液体を収集するステップと、
前記対象の外周縁を取り囲んでいる、前記障壁の内側に配置された排液溝を使用して液体を除去するステップとを含み、
前記テーブルが、当該テーブル上で前記排液溝と前記障壁との間に配置されている少なくとも1つのセンサを備える、
デバイス製造方法。
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US10/823777 | 2004-04-14 | ||
US10/823,777 US7898642B2 (en) | 2004-04-14 | 2004-04-14 | Lithographic apparatus and device manufacturing method |
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JP2008274721A Division JP5202228B2 (ja) | 2004-04-14 | 2008-10-24 | リソグラフィック装置及びデバイス製造方法 |
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JP2011249854A JP2011249854A (ja) | 2011-12-08 |
JP5300945B2 true JP5300945B2 (ja) | 2013-09-25 |
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JP2005115241A Expired - Fee Related JP4376203B2 (ja) | 2004-04-14 | 2005-04-13 | リソグラフィック装置 |
JP2008274716A Pending JP2009044185A (ja) | 2004-04-14 | 2008-10-24 | リソグラフィック装置及びデバイス製造方法 |
JP2008274728A Expired - Fee Related JP5027092B2 (ja) | 2004-04-14 | 2008-10-24 | リソグラフィック装置及びデバイス製造方法 |
JP2008274726A Expired - Fee Related JP5027091B2 (ja) | 2004-04-14 | 2008-10-24 | リソグラフィック装置及びデバイス製造方法 |
JP2008274721A Expired - Fee Related JP5202228B2 (ja) | 2004-04-14 | 2008-10-24 | リソグラフィック装置及びデバイス製造方法 |
JP2008274725A Active JP5179317B2 (ja) | 2004-04-14 | 2008-10-24 | リソグラフィック装置 |
JP2011192774A Active JP5300945B2 (ja) | 2004-04-14 | 2011-09-05 | リソグラフィック装置及びデバイス製造方法 |
JP2012014835A Expired - Fee Related JP5529903B2 (ja) | 2004-04-14 | 2012-01-27 | リソグラフィック装置及びデバイス製造方法 |
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JP2005115241A Expired - Fee Related JP4376203B2 (ja) | 2004-04-14 | 2005-04-13 | リソグラフィック装置 |
JP2008274716A Pending JP2009044185A (ja) | 2004-04-14 | 2008-10-24 | リソグラフィック装置及びデバイス製造方法 |
JP2008274728A Expired - Fee Related JP5027092B2 (ja) | 2004-04-14 | 2008-10-24 | リソグラフィック装置及びデバイス製造方法 |
JP2008274726A Expired - Fee Related JP5027091B2 (ja) | 2004-04-14 | 2008-10-24 | リソグラフィック装置及びデバイス製造方法 |
JP2008274721A Expired - Fee Related JP5202228B2 (ja) | 2004-04-14 | 2008-10-24 | リソグラフィック装置及びデバイス製造方法 |
JP2008274725A Active JP5179317B2 (ja) | 2004-04-14 | 2008-10-24 | リソグラフィック装置 |
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US (9) | US7898642B2 (ja) |
EP (1) | EP1586948B1 (ja) |
JP (8) | JP4376203B2 (ja) |
KR (1) | KR100695554B1 (ja) |
CN (2) | CN101520611B (ja) |
DE (1) | DE602005000696T2 (ja) |
SG (1) | SG116611A1 (ja) |
TW (2) | TWI427427B (ja) |
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