KR970060527A - 탄화규소 반도체소자 및 이의 제조를 위한 공정 - Google Patents

탄화규소 반도체소자 및 이의 제조를 위한 공정 Download PDF

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KR970060527A
KR970060527A KR1019970001912A KR19970001912A KR970060527A KR 970060527 A KR970060527 A KR 970060527A KR 1019970001912 A KR1019970001912 A KR 1019970001912A KR 19970001912 A KR19970001912 A KR 19970001912A KR 970060527 A KR970060527 A KR 970060527A
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semiconductor layer
semiconductor
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유이치 다케우치
다케시 미야지마
노리히토 도쿠라
히로오 후마
도시오 무라타
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오카베 히로무
가부시키가이샤 덴소
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
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Abstract

n+-형 기판(1), n--형 탄화규소 반도체층(2) 및 p-형 탄화규소 반도체층(3)으로 구성되는 반도체기판(4)이 (0001)방향에 면 방위를 가지는 탄소면을 가지는 육방정계 단결정 탄화규소로 만들어졌다. n+-형 소오스영역(5)이 반도체층(3)의 표면층에 형성되고, 트렌치(7)는 주 표면에서 시작해 영역(5)과 반도체층(3)을 통과해 반도체층(2)에 도달하과, 그리고 〔110〕방향으로 연장한다. n-형 탄화규소 반도체박막층(8)이 영역(5), 반도체층(3) 및 트렌치(7)의 측벽상의 반도체층(2)위에 제공되고, 게이트전극층(10)이 게이트 절연막(9)의 내측에 형성되고, 소오스 전극층(12)이 반도체영역(5)의 표면위에 형성되고, 그리고 드레인전극층(13)이 n+-형기판(1)의 표면위에 형성된다.

Description

탄화규소 반도체소자 및 이의 제조를 위한 공정
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 기판의 단면도.
제6도 내지 제12도는 n-채널 트렌치 게이트-형 전력 MOSFET의 제조공정을 설명하기 위한 단면도.

Claims (4)

  1. 제1전도형의 제1반도체층, 상기 제1반도체층의 전기적 저항보다 높은 전기적 저항을 가지는 제1전도형의 제2반도체층 및 거의 (0001)의 면 방위를 가지는 탄소면의 주 표면을 가지는 제2전도형의 제3반도체층의 순서의 적층을 포함하는 단결정 육방정계 탄화규소 반도체기판; 상기 제3반도체층의 상기 주 표면에 인접한 층에서 상기 제3반도체층의 사전 결정된 영역에 형성된 제1전도형의 반도체영역; 상기 주 표면에서 시작해 상기 반도체영역과 상기 제3반도체층을 통과해 상기 제2반도체층에 도달하는, 〔110〕의 방향으로 연장하는 측벽을 가지는 트렌치; 상기 제3반체층과 상기 제2반도체층은 트랜치내에 있으며, 상기 반도체영역의 상기 측벽상에서 연장하는, 표면을 가지는 제4반도체층; 상기 제4반도체층의 상기 표면에 형성되는 게이트절연막; 상기 트렌치내 상기 게이트절연막 내측에 형성되는 게이트전극층; 상기 반도체영역의 적어도 일부상에 형성되는 제1전극층; 및 상기 제1반도체층의 표면에 형성되는 제2전극층을 포함하는 탄화규소 반도체소자.
  2. 제1항에 있어서, 상기 트렌치는 트렌치의 측벽에 의해 형성되는 거의 동일한 내측각을 가지는 평면육각형 형태를 가지는 것을 특징으로 하는 반도체소자.
  3. 제1항에 있어서, 상기 제4반도체층은 상기 제1 및 제3반도체층의 불순물농도보다 낮은 불순물농도를 가지는 것을 특징으로 하는 반도체소자.
  4. 제1 내지 제3반도체층을 포함하는 육방정계 단결정 탄화규소 반도체기판을 만들기 위해 제1전도형의 육방정계 단결정 탄화규소의 제1반도체층상에 상기 제1반도체층의 전기적 저항보다 높은 전기적 저항을 가지는 제1전도형의 제2반도체층 및 거의 (0001)의 면 방위를 가지는 탄소면의 주 표면을 가지는 제2전도형의 제3반도체층을 순서대로 에피택셜적으로 성장시키는 단계; 상기 제3반도체층의 주 표면에 인접한 층에서 상기 반도체층의 사전결정된 영역에 제1전도형의 반도체영역을 형성시키는 단계; 상기 주 표면에서 시작해 상기 반도체 영역과 상기 제3반도체층을 통과해 상기 제2반도체층에 도달하는, 〔110〕의 방향으로 연장하는 측벽을 가지는 트레치를 형성시키는 단계; 상기 트렌치의 내측표면을 포함한 모든 표면상에, 다른 영역보다는 상기 프렌티의 측면상에서 두꺼운 두께를 가지는 탄화규소의 제4반도체층을 성장시키는 단계; 상기 트렌치의 상기 측벽상의 영역이외의 상기 제4반도체층을 완전히 산화시키기 위해 상기 제4반도체층을 열적으로 산화시켜 산화된 반도체층이 트렌치의 측벽보다는 트렌치의 하부에서 더 두꺼운 두께를 가지게하고, 상기 트렌치의 측벽사의 상기 제4반도체층을 선택적으로 남겨 상기 트렌치에서 상기 제4반도체층상에 게이트절연층을 형성하는 단계; 상기 트렌치내 상기 게이트 절연막 내측에 게이트 전극층을 형성시키는 단계; 상기 반도체영역의 적어도 일부상에 제1전극층을 형성시키는 단계; 및 상기 제1반도체층의 표면상에 제2전극층을 형성시키는 단계를 포함하는 탄화규소 반도체소자를 제조하기 위한 공정.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970001912A 1996-01-23 1997-01-23 탄화규소 반도체소자 및 이의 제조를 위한 공정 KR100263824B1 (ko)

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JP96-9625 1996-01-23
JP00962596A JP3471509B2 (ja) 1996-01-23 1996-01-23 炭化珪素半導体装置

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DE (1) DE19702110B4 (ko)
FR (1) FR2744837B1 (ko)

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