KR970060527A - 탄화규소 반도체소자 및 이의 제조를 위한 공정 - Google Patents
탄화규소 반도체소자 및 이의 제조를 위한 공정 Download PDFInfo
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- KR970060527A KR970060527A KR1019970001912A KR19970001912A KR970060527A KR 970060527 A KR970060527 A KR 970060527A KR 1019970001912 A KR1019970001912 A KR 1019970001912A KR 19970001912 A KR19970001912 A KR 19970001912A KR 970060527 A KR970060527 A KR 970060527A
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- 239000004065 semiconductor Substances 0.000 title claims abstract 53
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract 9
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract 6
- 238000004519 manufacturing process Methods 0.000 title description 2
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract 3
- 229910052799 carbon Inorganic materials 0.000 claims abstract 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract 3
- 239000013078 crystal Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 238000003475 lamination Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract 11
- 229920000742 Cotton Polymers 0.000 abstract 1
- 239000010408 film Substances 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
- H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
n+-형 기판(1), n--형 탄화규소 반도체층(2) 및 p-형 탄화규소 반도체층(3)으로 구성되는 반도체기판(4)이 (0001)방향에 면 방위를 가지는 탄소면을 가지는 육방정계 단결정 탄화규소로 만들어졌다. n+-형 소오스영역(5)이 반도체층(3)의 표면층에 형성되고, 트렌치(7)는 주 표면에서 시작해 영역(5)과 반도체층(3)을 통과해 반도체층(2)에 도달하과, 그리고 〔110〕방향으로 연장한다. n-형 탄화규소 반도체박막층(8)이 영역(5), 반도체층(3) 및 트렌치(7)의 측벽상의 반도체층(2)위에 제공되고, 게이트전극층(10)이 게이트 절연막(9)의 내측에 형성되고, 소오스 전극층(12)이 반도체영역(5)의 표면위에 형성되고, 그리고 드레인전극층(13)이 n+-형기판(1)의 표면위에 형성된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제5도는 기판의 단면도.
제6도 내지 제12도는 n-채널 트렌치 게이트-형 전력 MOSFET의 제조공정을 설명하기 위한 단면도.
Claims (4)
- 제1전도형의 제1반도체층, 상기 제1반도체층의 전기적 저항보다 높은 전기적 저항을 가지는 제1전도형의 제2반도체층 및 거의 (0001)의 면 방위를 가지는 탄소면의 주 표면을 가지는 제2전도형의 제3반도체층의 순서의 적층을 포함하는 단결정 육방정계 탄화규소 반도체기판; 상기 제3반도체층의 상기 주 표면에 인접한 층에서 상기 제3반도체층의 사전 결정된 영역에 형성된 제1전도형의 반도체영역; 상기 주 표면에서 시작해 상기 반도체영역과 상기 제3반도체층을 통과해 상기 제2반도체층에 도달하는, 〔110〕의 방향으로 연장하는 측벽을 가지는 트렌치; 상기 제3반체층과 상기 제2반도체층은 트랜치내에 있으며, 상기 반도체영역의 상기 측벽상에서 연장하는, 표면을 가지는 제4반도체층; 상기 제4반도체층의 상기 표면에 형성되는 게이트절연막; 상기 트렌치내 상기 게이트절연막 내측에 형성되는 게이트전극층; 상기 반도체영역의 적어도 일부상에 형성되는 제1전극층; 및 상기 제1반도체층의 표면에 형성되는 제2전극층을 포함하는 탄화규소 반도체소자.
- 제1항에 있어서, 상기 트렌치는 트렌치의 측벽에 의해 형성되는 거의 동일한 내측각을 가지는 평면육각형 형태를 가지는 것을 특징으로 하는 반도체소자.
- 제1항에 있어서, 상기 제4반도체층은 상기 제1 및 제3반도체층의 불순물농도보다 낮은 불순물농도를 가지는 것을 특징으로 하는 반도체소자.
- 제1 내지 제3반도체층을 포함하는 육방정계 단결정 탄화규소 반도체기판을 만들기 위해 제1전도형의 육방정계 단결정 탄화규소의 제1반도체층상에 상기 제1반도체층의 전기적 저항보다 높은 전기적 저항을 가지는 제1전도형의 제2반도체층 및 거의 (0001)의 면 방위를 가지는 탄소면의 주 표면을 가지는 제2전도형의 제3반도체층을 순서대로 에피택셜적으로 성장시키는 단계; 상기 제3반도체층의 주 표면에 인접한 층에서 상기 반도체층의 사전결정된 영역에 제1전도형의 반도체영역을 형성시키는 단계; 상기 주 표면에서 시작해 상기 반도체 영역과 상기 제3반도체층을 통과해 상기 제2반도체층에 도달하는, 〔110〕의 방향으로 연장하는 측벽을 가지는 트레치를 형성시키는 단계; 상기 트렌치의 내측표면을 포함한 모든 표면상에, 다른 영역보다는 상기 프렌티의 측면상에서 두꺼운 두께를 가지는 탄화규소의 제4반도체층을 성장시키는 단계; 상기 트렌치의 상기 측벽상의 영역이외의 상기 제4반도체층을 완전히 산화시키기 위해 상기 제4반도체층을 열적으로 산화시켜 산화된 반도체층이 트렌치의 측벽보다는 트렌치의 하부에서 더 두꺼운 두께를 가지게하고, 상기 트렌치의 측벽사의 상기 제4반도체층을 선택적으로 남겨 상기 트렌치에서 상기 제4반도체층상에 게이트절연층을 형성하는 단계; 상기 트렌치내 상기 게이트 절연막 내측에 게이트 전극층을 형성시키는 단계; 상기 반도체영역의 적어도 일부상에 제1전극층을 형성시키는 단계; 및 상기 제1반도체층의 표면상에 제2전극층을 형성시키는 단계를 포함하는 탄화규소 반도체소자를 제조하기 위한 공정.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP96-9625 | 1996-01-23 | ||
JP00962596A JP3471509B2 (ja) | 1996-01-23 | 1996-01-23 | 炭化珪素半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970060527A true KR970060527A (ko) | 1997-08-12 |
KR100263824B1 KR100263824B1 (ko) | 2000-08-16 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019970001912A KR100263824B1 (ko) | 1996-01-23 | 1997-01-23 | 탄화규소 반도체소자 및 이의 제조를 위한 공정 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5744826A (ko) |
JP (1) | JP3471509B2 (ko) |
KR (1) | KR100263824B1 (ko) |
DE (1) | DE19702110B4 (ko) |
FR (1) | FR2744837B1 (ko) |
Families Citing this family (80)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100199997B1 (ko) * | 1995-09-06 | 1999-07-01 | 오카메 히로무 | 탄화규소 반도체장치 |
US6180958B1 (en) * | 1997-02-07 | 2001-01-30 | James Albert Cooper, Jr. | Structure for increasing the maximum voltage of silicon carbide power transistors |
US6570185B1 (en) * | 1997-02-07 | 2003-05-27 | Purdue Research Foundation | Structure to reduce the on-resistance of power transistors |
US6057558A (en) * | 1997-03-05 | 2000-05-02 | Denson Corporation | Silicon carbide semiconductor device and manufacturing method thereof |
US5831289A (en) * | 1997-10-06 | 1998-11-03 | Northrop Grumman Corporation | Silicon carbide gate turn-off thyristor arrangement |
JP4192281B2 (ja) | 1997-11-28 | 2008-12-10 | 株式会社デンソー | 炭化珪素半導体装置 |
JPH11251592A (ja) * | 1998-01-05 | 1999-09-07 | Denso Corp | 炭化珪素半導体装置 |
KR100342798B1 (ko) * | 1998-03-19 | 2002-07-03 | 가나이 쓰토무 | 탄화 규소 반도체 스위칭 장치 |
US6221700B1 (en) | 1998-07-31 | 2001-04-24 | Denso Corporation | Method of manufacturing silicon carbide semiconductor device with high activation rate of impurities |
KR100564531B1 (ko) * | 1998-10-19 | 2006-05-25 | 페어차일드코리아반도체 주식회사 | 트랜치게이트구조를갖는전력모스펫및그제조방법 |
JP2000208759A (ja) * | 1999-01-12 | 2000-07-28 | Rohm Co Ltd | 半導体装置 |
US6252218B1 (en) | 1999-02-02 | 2001-06-26 | Agilent Technologies, Inc | Amorphous silicon active pixel sensor with rectangular readout layer in a hexagonal grid layout |
US6228720B1 (en) | 1999-02-23 | 2001-05-08 | Matsushita Electric Industrial Co., Ltd. | Method for making insulated-gate semiconductor element |
US6706604B2 (en) * | 1999-03-25 | 2004-03-16 | Hitachi, Ltd. | Method of manufacturing a trench MOS gate device |
US6740555B1 (en) * | 1999-09-29 | 2004-05-25 | Infineon Technologies Ag | Semiconductor structures and manufacturing methods |
JP3551909B2 (ja) | 1999-11-18 | 2004-08-11 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
US6150670A (en) * | 1999-11-30 | 2000-11-21 | International Business Machines Corporation | Process for fabricating a uniform gate oxide of a vertical transistor |
US6372567B1 (en) * | 2000-04-20 | 2002-04-16 | Infineon Technologies Ag | Control of oxide thickness in vertical transistor structures |
JP4240752B2 (ja) * | 2000-05-01 | 2009-03-18 | 富士電機デバイステクノロジー株式会社 | 半導体装置 |
US6432798B1 (en) * | 2000-08-10 | 2002-08-13 | Intel Corporation | Extension of shallow trench isolation by ion implantation |
US6710403B2 (en) * | 2002-07-30 | 2004-03-23 | Fairchild Semiconductor Corporation | Dual trench power MOSFET |
US7291884B2 (en) * | 2001-07-03 | 2007-11-06 | Siliconix Incorporated | Trench MIS device having implanted drain-drift region and thick bottom oxide |
US6781196B2 (en) * | 2002-03-11 | 2004-08-24 | General Semiconductor, Inc. | Trench DMOS transistor having improved trench structure |
DE10393777T5 (de) * | 2002-11-25 | 2005-10-20 | National Institute Of Advanced Industrial Science And Technology | Halbleitervorrichtung und elektrischer Leistungswandler, Ansteuerungsinverter, Mehrzweckinverter und Höchstleistungs-Hochfrequenz-Kommunikationsgerät unter Verwendung der Halbleitervorrichtung |
JP3715971B2 (ja) | 2003-04-02 | 2005-11-16 | ローム株式会社 | 半導体装置 |
KR100471001B1 (ko) * | 2003-07-02 | 2005-03-14 | 삼성전자주식회사 | 리세스형 트랜지스터 및 그의 제조방법 |
SE527205C2 (sv) * | 2004-04-14 | 2006-01-17 | Denso Corp | Förfarande för tillverkning av halvledaranordning med kanal i halvledarsubstrat av kiselkarbid |
JP4899405B2 (ja) * | 2004-11-08 | 2012-03-21 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
JP4830285B2 (ja) * | 2004-11-08 | 2011-12-07 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
JP2006147700A (ja) * | 2004-11-17 | 2006-06-08 | Sanyo Electric Co Ltd | 半導体装置 |
JP5017823B2 (ja) | 2005-09-12 | 2012-09-05 | 富士電機株式会社 | 半導体素子の製造方法 |
JP5068009B2 (ja) * | 2005-09-14 | 2012-11-07 | 三菱電機株式会社 | 炭化ケイ素半導体装置 |
JP5167593B2 (ja) * | 2006-03-23 | 2013-03-21 | 富士電機株式会社 | 半導体装置 |
US20080038890A1 (en) * | 2006-08-10 | 2008-02-14 | General Electric Company | Method for improved trench protection in vertical umosfet devices |
JP4046140B1 (ja) | 2006-11-29 | 2008-02-13 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP2008226914A (ja) * | 2007-03-08 | 2008-09-25 | Rohm Co Ltd | GaN系半導体素子 |
JP4798119B2 (ja) | 2007-11-06 | 2011-10-19 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
EP2091083A3 (en) * | 2008-02-13 | 2009-10-14 | Denso Corporation | Silicon carbide semiconductor device including a deep layer |
US20090246460A1 (en) * | 2008-03-26 | 2009-10-01 | Hans Cho | Structure And Method For Forming Crystalline Material On An Amorphous Structure |
JP4640436B2 (ja) * | 2008-04-14 | 2011-03-02 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
JP4640439B2 (ja) | 2008-04-17 | 2011-03-02 | 株式会社デンソー | 炭化珪素半導体装置 |
JP2009302436A (ja) | 2008-06-17 | 2009-12-24 | Denso Corp | 炭化珪素半導体装置の製造方法 |
WO2011092808A1 (ja) * | 2010-01-27 | 2011-08-04 | 住友電気工業株式会社 | 炭化ケイ素半導体装置およびその製造方法 |
JP5935821B2 (ja) * | 2008-12-01 | 2016-06-15 | 富士電機株式会社 | 炭化珪素半導体素子の製造方法および炭化珪素半導体素子 |
JP5423069B2 (ja) * | 2009-03-12 | 2014-02-19 | 株式会社デンソー | 炭化珪素半導体装置の製造方法 |
JP2011044513A (ja) * | 2009-08-20 | 2011-03-03 | National Institute Of Advanced Industrial Science & Technology | 炭化珪素半導体装置 |
US8872188B2 (en) * | 2010-01-19 | 2014-10-28 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method of manufacturing thereof |
JP2012038771A (ja) * | 2010-08-03 | 2012-02-23 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
JP5707770B2 (ja) * | 2010-08-03 | 2015-04-30 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
CN102971853B (zh) * | 2010-08-03 | 2016-06-29 | 住友电气工业株式会社 | 半导体器件及其制造方法 |
GB2483702A (en) | 2010-09-17 | 2012-03-21 | Ge Aviat Systems Ltd | Method for the manufacture of a Silicon Carbide, Silicon Oxide interface having reduced interfacial carbon gettering |
JP5568036B2 (ja) | 2011-03-09 | 2014-08-06 | トヨタ自動車株式会社 | Igbt |
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JP2013004636A (ja) * | 2011-06-15 | 2013-01-07 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置およびその製造方法 |
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JP5699878B2 (ja) | 2011-09-14 | 2015-04-15 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP2013069964A (ja) | 2011-09-26 | 2013-04-18 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
KR102052307B1 (ko) * | 2011-11-09 | 2019-12-04 | 스카이워크스 솔루션즈, 인코포레이티드 | 전계 효과 트랜지스터 구조 및 관련된 무선-주파수 스위치 |
JP5764046B2 (ja) | 2011-11-21 | 2015-08-12 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP5751146B2 (ja) * | 2011-11-24 | 2015-07-22 | 住友電気工業株式会社 | 半導体装置およびその製造方法 |
JP2014056913A (ja) | 2012-09-12 | 2014-03-27 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
JP5811973B2 (ja) | 2012-09-12 | 2015-11-11 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP6056292B2 (ja) * | 2012-09-12 | 2017-01-11 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
KR101920717B1 (ko) | 2013-01-14 | 2018-11-21 | 삼성전자주식회사 | 이중 병렬 채널 구조를 갖는 반도체 소자 및 상기 반도체 소자의 제조 방법 |
US9349856B2 (en) | 2013-03-26 | 2016-05-24 | Toyoda Gosei Co., Ltd. | Semiconductor device including first interface and second interface as an upper surface of a convex protruded from first interface and manufacturing device thereof |
JP6048317B2 (ja) | 2013-06-05 | 2016-12-21 | 株式会社デンソー | 炭化珪素半導体装置 |
US9024328B2 (en) * | 2013-07-02 | 2015-05-05 | General Electric Company | Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture |
DE102013217768A1 (de) * | 2013-09-05 | 2015-03-05 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Substrats, Substrat, Metall-Oxid-Halbleiter-Feldeffekttransistor mit einem Substrat, mikroelektromechanisches System mit einem Substrat, und Kraftfahrzeug |
JP2015099845A (ja) * | 2013-11-19 | 2015-05-28 | 住友電気工業株式会社 | 半導体装置 |
JP2016035952A (ja) * | 2014-08-01 | 2016-03-17 | ラピスセミコンダクタ株式会社 | 半導体素子および半導体装置 |
JP6613610B2 (ja) * | 2015-05-14 | 2019-12-04 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6115678B1 (ja) | 2016-02-01 | 2017-04-19 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
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CN108735795B (zh) * | 2017-04-21 | 2021-09-03 | 苏州能屋电子科技有限公司 | (0001)面外延的六方相SiC晶圆、UMOSFET器件及其制作方法 |
TWI663725B (zh) | 2017-04-26 | 2019-06-21 | 國立清華大學 | 溝槽式閘極功率金氧半場效電晶體之結構 |
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US20220130998A1 (en) * | 2020-10-28 | 2022-04-28 | Cree, Inc. | Power semiconductor devices including angled gate trenches |
JP2022112246A (ja) * | 2021-01-21 | 2022-08-02 | 富士電機株式会社 | 炭化珪素半導体装置および炭化珪素半導体装置の製造方法 |
CN113078050B (zh) * | 2021-03-30 | 2023-03-10 | 安徽长飞先进半导体有限公司 | 一种C面SiC外延结构及外延沟槽的填充方法 |
US20230006049A1 (en) * | 2021-06-30 | 2023-01-05 | Hunan Sanan Semiconductor Co., Ltd. | Silicon carbide power device with an enhanced junction field effect transistor region |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4859621A (en) * | 1988-02-01 | 1989-08-22 | General Instrument Corp. | Method for setting the threshold voltage of a vertical power MOSFET |
JPH0291976A (ja) * | 1988-09-29 | 1990-03-30 | Oki Electric Ind Co Ltd | 縦型溝型mos fetの製造方法 |
JP2542448B2 (ja) * | 1990-05-24 | 1996-10-09 | シャープ株式会社 | 電界効果トランジスタおよびその製造方法 |
JP2917532B2 (ja) * | 1991-01-24 | 1999-07-12 | 富士電機株式会社 | 電界効果トランジスタ |
JP3321189B2 (ja) * | 1991-10-04 | 2002-09-03 | 株式会社東芝 | 電力用半導体素子 |
US5233215A (en) * | 1992-06-08 | 1993-08-03 | North Carolina State University At Raleigh | Silicon carbide power MOSFET with floating field ring and floating field plate |
US5389799A (en) * | 1992-06-12 | 1995-02-14 | Kabushiki Kaisha Toshiba | Semiconductor device |
US5506421A (en) * | 1992-11-24 | 1996-04-09 | Cree Research, Inc. | Power MOSFET in silicon carbide |
US5399515A (en) * | 1993-07-12 | 1995-03-21 | Motorola, Inc. | Method of fabricating a silicon carbide vertical MOSFET and device |
JP2910573B2 (ja) * | 1993-09-10 | 1999-06-23 | 株式会社日立製作所 | 電界効果トランジスタ及びその製造方法 |
US5323040A (en) * | 1993-09-27 | 1994-06-21 | North Carolina State University At Raleigh | Silicon carbide field effect device |
JP3334290B2 (ja) * | 1993-11-12 | 2002-10-15 | 株式会社デンソー | 半導体装置 |
EP0778662A1 (en) * | 1993-12-07 | 1997-06-11 | Nippondenso Co., Ltd. | Alternating current generator for motor vehicles |
JP3223671B2 (ja) * | 1993-12-07 | 2001-10-29 | 株式会社デンソー | 車両用交流発電機の三相全波整流器 |
DE69534888T2 (de) * | 1994-04-06 | 2006-11-02 | Denso Corp., Kariya | Herstellungsverfahren für Halbleiterbauelement mit Graben |
US5736753A (en) * | 1994-09-12 | 1998-04-07 | Hitachi, Ltd. | Semiconductor device for improved power conversion having a hexagonal-system single-crystal silicon carbide |
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1997
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- 1997-01-22 DE DE19702110A patent/DE19702110B4/de not_active Expired - Lifetime
- 1997-01-23 KR KR1019970001912A patent/KR100263824B1/ko not_active IP Right Cessation
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JP3471509B2 (ja) | 2003-12-02 |
DE19702110B4 (de) | 2007-03-08 |
DE19702110A1 (de) | 1997-07-24 |
FR2744837A1 (fr) | 1997-08-14 |
FR2744837B1 (fr) | 1999-05-28 |
KR100263824B1 (ko) | 2000-08-16 |
US5744826A (en) | 1998-04-28 |
JPH09199724A (ja) | 1997-07-31 |
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