KR100810554B1 - 광전자 및 전자 디바이스용 자립형 (알루미늄, 인듐,갈륨) 질화물 기재 상의 에피택시 품질(표면 조직 및 결함밀도)을 향상시키는 방법 - Google Patents

광전자 및 전자 디바이스용 자립형 (알루미늄, 인듐,갈륨) 질화물 기재 상의 에피택시 품질(표면 조직 및 결함밀도)을 향상시키는 방법 Download PDF

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KR100810554B1
KR100810554B1 KR1020027017929A KR20027017929A KR100810554B1 KR 100810554 B1 KR100810554 B1 KR 100810554B1 KR 1020027017929 A KR1020027017929 A KR 1020027017929A KR 20027017929 A KR20027017929 A KR 20027017929A KR 100810554 B1 KR100810554 B1 KR 100810554B1
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substrate
iii
nitride
gan
growth
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KR20030017575A (ko
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플린제프리에스
브란데스조지알
바우도로버트피
커프데이비드엠
수수에핑
란디니바바라이
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크리, 인코포레이티드
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • C30B25/02—Epitaxial-layer growth
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
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  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
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KR1020027017929A 2000-06-28 2001-06-27 광전자 및 전자 디바이스용 자립형 (알루미늄, 인듐,갈륨) 질화물 기재 상의 에피택시 품질(표면 조직 및 결함밀도)을 향상시키는 방법 Expired - Lifetime KR100810554B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/605,195 US6447604B1 (en) 2000-03-13 2000-06-28 Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
US09/605,195 2000-06-28
PCT/US2001/020409 WO2002001608A2 (en) 2000-06-28 2001-06-27 METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND DEFECT DENSITY) ON FREE-STANDING (ALUMINUM, INDIUM, GALLIUM) NITRIDE ((Al,In,Ga)N) SUBSTRATES FOR OPTO-ELECTRONIC AND ELECTRONIC DEVICES

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KR1020077019660A Division KR100856447B1 (ko) 2000-06-28 2001-06-27 광전자 및 전자 디바이스용 자립형 (알루미늄, 인듐, 갈륨)질화물 기재 상의 에피택시 품질(표면 조직 및 결함밀도)을 향상시키는 방법

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KR20030017575A KR20030017575A (ko) 2003-03-03
KR100810554B1 true KR100810554B1 (ko) 2008-03-18

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KR1020027017929A Expired - Lifetime KR100810554B1 (ko) 2000-06-28 2001-06-27 광전자 및 전자 디바이스용 자립형 (알루미늄, 인듐,갈륨) 질화물 기재 상의 에피택시 품질(표면 조직 및 결함밀도)을 향상시키는 방법
KR1020077019660A Expired - Lifetime KR100856447B1 (ko) 2000-06-28 2001-06-27 광전자 및 전자 디바이스용 자립형 (알루미늄, 인듐, 갈륨)질화물 기재 상의 에피택시 품질(표면 조직 및 결함밀도)을 향상시키는 방법

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US (1) US6447604B1 (enExample)
EP (4) EP1299900B1 (enExample)
JP (2) JP5361107B2 (enExample)
KR (2) KR100810554B1 (enExample)
AU (1) AU2001268730A1 (enExample)
TW (1) TW516102B (enExample)
WO (1) WO2002001608A2 (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
US12254262B2 (en) 2021-08-31 2025-03-18 Taiwan Semiconductor Manufacturing Company Ltd. Calibration method for emulating group III-V semiconductor device and method for manufacturing group III-V semiconductor device

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US6958093B2 (en) * 1994-01-27 2005-10-25 Cree, Inc. Free-standing (Al, Ga, In)N and parting method for forming same
JP2001168388A (ja) * 1999-09-30 2001-06-22 Sharp Corp 窒化ガリウム系化合物半導体チップ及びその製造方法ならびに窒化ガリウム系化合物半導体ウエハー
JP4556300B2 (ja) * 2000-07-18 2010-10-06 ソニー株式会社 結晶成長方法
JP2002075965A (ja) * 2000-08-25 2002-03-15 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体素子
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
US6706119B2 (en) * 2001-03-30 2004-03-16 Technologies And Devices International, Inc. Apparatus for epitaxially growing semiconductor device structures with submicron group III nitride layer utilizing HVPE
US6958497B2 (en) * 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
PL219109B1 (pl) * 2001-06-06 2015-03-31 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal oraz urządzenie do otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
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