KR20070097594A - 광전자 및 전자 디바이스용 자립형 (알루미늄, 인듐, 갈륨)질화물 기재 상의 에피택시 품질(표면 조직 및 결함밀도)을 향상시키는 방법 - Google Patents
광전자 및 전자 디바이스용 자립형 (알루미늄, 인듐, 갈륨)질화물 기재 상의 에피택시 품질(표면 조직 및 결함밀도)을 향상시키는 방법 Download PDFInfo
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Abstract
Description
Claims (23)
- FS Ⅲ-Ⅴ 질화물 재료 기재 상의 Ⅲ-Ⅴ 질화물 호모에피택셜층을 포함하는 것인 Ⅲ-Ⅴ 질화물 호모에피택셜 미세 전자 디바이스 구조.
- 제1항에 있어서, 상기 기재는 마무리되어 있는 것인 Ⅲ-Ⅴ 질화물 호모에피택셜 미세 전자 디바이스 구조.
- 제1항에 있어서, 상기 기재는 마무리되어 있지 않은 것인 Ⅲ-Ⅴ 질화물 호모에피택셜 미세 전자 디바이스 구조.
- 제1항에 있어서, 상기 Ⅲ-Ⅴ 질화물 호모에피택셜 에피층은 격자 불일치형 AlInGaN 에피층을 포함하는 것인 Ⅲ-Ⅴ 질화물 호모에피택셜 미세 전자 디바이스 구조.
- 제1항에 있어서, 상기 기재는 그레이딩된 AlGaN층이 위에 형성되어 있는 FS GaN을 포함하는 것인 Ⅲ-Ⅴ 질화물 호모에피택셜 미세 전자 디바이스 구조.
- 제1항에 있어서, 5E8/cm2 미만의 전위 밀도를 갖는 것인 Ⅲ-Ⅴ 질화물 호모에피택셜 미세 전자 디바이스 구조.
- 제1항에 있어서, 5E7/cm2 미만의 전위 밀도를 갖는 것인 Ⅲ-Ⅴ 질화물 호모에피택셜 미세 전자 디바이스 구조.
- 제1항에 있어서, 5E6/cm2 미만의 전위 밀도를 갖는 것인 Ⅲ-Ⅴ 질화물 호모에피택셜 미세 전자 디바이스 구조.
- 제1항에 있어서, 상기 기재는 GaN을 포함하고, 상기 Ⅲ-Ⅴ 질화물 호모에피택셜 에피층은 상기 기재의 Ga면 위에 침적되는 것인 Ⅲ-Ⅴ 질화물 호모에피택셜 미세 전자 디바이스 구조.
- 제1항에 있어서, 상기 Ⅲ-Ⅴ 질화물 호모에피택셜 에피층은 상기 기재의 N면 위에 침적되는 것인 Ⅲ-Ⅴ 질화물 호모에피택셜 미세 전자 디바이스 구조.
- 제1항에 따른 Ⅲ-Ⅴ 질화물 호모에피택셜 미세 전자 디바이스 구조를 포함하는 것인 미세 전자 디바이스.
- 제15항에 있어서, UV LED를 포함하는 것인 미세 전자 디바이스.
- 제15항에 있어서, AlGaN/GaN의 높은 전자 가동성의 트랜지스터(HEMT)를 포함하는 것인 미세 전자 디바이스.
- 제15항에 있어서, 레이저 다이오드를 포함하는 것인 미세 전자 디바이스.
- 제15항의 미세 전자 디바이스를 구비하는 시스템.
- FS Ⅲ-Ⅴ 질화물 재료 기재 상의 Ⅲ-Ⅴ 질화물 호모에피택셜층을 포함하고, 제곱 센티미터 당 1E6 미만의 전위를 갖는 호모에피택셜 Ⅲ-Ⅴ 질화물 물품.
- 제20항에 있어서, 상기 호모에피택셜층과 기재는 각각 AlGaN을 포함하는 것인 물품.
- 제20항에 있어서, 상기 호모에피택셜층과 상기 기재 사이의 계면에 오염이 없는 것인 물품.
- 서셉터의 동작 수명을 연장시키기 위하여 위에 CTE 정합 피막을 갖는 서셉터를 포함하는 것인 에피택셜 성장 반응기.
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Application Number | Priority Date | Filing Date | Title |
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US09/605,195 US6447604B1 (en) | 2000-03-13 | 2000-06-28 | Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices |
US09/605,195 | 2000-06-28 |
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KR1020027017929A Division KR100810554B1 (ko) | 2000-06-28 | 2001-06-27 | 광전자 및 전자 디바이스용 자립형 (알루미늄, 인듐,갈륨) 질화물 기재 상의 에피택시 품질(표면 조직 및 결함밀도)을 향상시키는 방법 |
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KR1020027017929A KR100810554B1 (ko) | 2000-06-28 | 2001-06-27 | 광전자 및 전자 디바이스용 자립형 (알루미늄, 인듐,갈륨) 질화물 기재 상의 에피택시 품질(표면 조직 및 결함밀도)을 향상시키는 방법 |
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KR (2) | KR100856447B1 (ko) |
AU (1) | AU2001268730A1 (ko) |
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KR101504772B1 (ko) * | 2008-01-15 | 2015-03-20 | 스미토모덴키고교가부시키가이샤 | 질화 알루미늄 결정의 성장 방법, 질화 알루미늄 결정의 제조 방법 및 질화 알루미늄 결정 |
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AU2001268730A1 (en) | 2002-01-08 |
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EP1299900B1 (en) | 2012-12-12 |
JP5361107B2 (ja) | 2013-12-04 |
WO2002001608A2 (en) | 2002-01-03 |
TW516102B (en) | 2003-01-01 |
JP2011251905A (ja) | 2011-12-15 |
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