KR100401086B1 - 반도체기억장치 - Google Patents

반도체기억장치 Download PDF

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Publication number
KR100401086B1
KR100401086B1 KR1019950051275A KR19950051275A KR100401086B1 KR 100401086 B1 KR100401086 B1 KR 100401086B1 KR 1019950051275 A KR1019950051275 A KR 1019950051275A KR 19950051275 A KR19950051275 A KR 19950051275A KR 100401086 B1 KR100401086 B1 KR 100401086B1
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South Korea
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main
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Expired - Lifetime
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KR1019950051275A
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English (en)
Korean (ko)
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KR960025724A (ko
Inventor
쯔기오 다까하시
고로 기쯔까와
다께사다 아끼바
야스시 가와세
마사유끼 나까무라
Original Assignee
히다찌디바이스엔지니어링 가부시기가이샤
가부시끼가이샤 히다치 세이사꾸쇼
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Publication of KR960025724A publication Critical patent/KR960025724A/ko
Application granted granted Critical
Publication of KR100401086B1 publication Critical patent/KR100401086B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
KR1019950051275A 1994-12-20 1995-12-18 반도체기억장치 Expired - Lifetime KR100401086B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP33495094A JP3666671B2 (ja) 1994-12-20 1994-12-20 半導体装置
JP94-334950 1994-12-20

Publications (2)

Publication Number Publication Date
KR960025724A KR960025724A (ko) 1996-07-20
KR100401086B1 true KR100401086B1 (ko) 2004-03-06

Family

ID=18283056

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950051275A Expired - Lifetime KR100401086B1 (ko) 1994-12-20 1995-12-18 반도체기억장치

Country Status (4)

Country Link
US (7) US5604697A (enExample)
JP (1) JP3666671B2 (enExample)
KR (1) KR100401086B1 (enExample)
TW (1) TW301726B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170109692A (ko) * 2011-07-29 2017-09-29 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 반도체 장치의 제조 방법

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JP3666671B2 (ja) 1994-12-20 2005-06-29 株式会社日立製作所 半導体装置
JP3869045B2 (ja) * 1995-11-09 2007-01-17 株式会社日立製作所 半導体記憶装置
US5985709A (en) * 1996-04-16 1999-11-16 United Microelectronics Corp. Process for fabricating a triple-well structure for semiconductor integrated circuit devices
KR100203145B1 (ko) * 1996-06-29 1999-06-15 김영환 반도체 메모리 소자의 뱅크 분산 방법
JPH1040685A (ja) * 1996-07-23 1998-02-13 Mitsubishi Electric Corp 同期型記憶装置および同期型記憶装置におけるデータ読み出し方法
WO1998019308A1 (fr) * 1996-10-28 1998-05-07 Mitsubishi Denki Kabushiki Kaisha Dispositif a circuit integre a memoire avec structure compatible avec la logique
US5790467A (en) * 1996-11-25 1998-08-04 Texas Instruments Incorporated Apparatus and method for a direct-sense sense amplifier with a single read/write control line
JPH10162577A (ja) * 1996-12-02 1998-06-19 Toshiba Corp 半導体記憶装置及びデータ書き込み方法
JP2976912B2 (ja) * 1997-01-13 1999-11-10 日本電気株式会社 半導体記憶装置
JP3016373B2 (ja) * 1997-04-24 2000-03-06 日本電気株式会社 半導体記憶装置
AU7706198A (en) * 1997-05-30 1998-12-30 Micron Technology, Inc. 256 meg dynamic random access memory
JP4534163B2 (ja) * 1997-06-16 2010-09-01 エルピーダメモリ株式会社 半導体集積回路装置
JP3722619B2 (ja) * 1997-07-10 2005-11-30 沖電気工業株式会社 メモリ装置及びそのアクセス制御方法
JP3853513B2 (ja) 1998-04-09 2006-12-06 エルピーダメモリ株式会社 ダイナミック型ｒａｍ
KR100283907B1 (ko) * 1998-12-09 2001-03-02 김영환 서브워드라인 구동회로를 구비한 반도체 메모리
JP3838607B2 (ja) * 1999-03-17 2006-10-25 松下電器産業株式会社 半導体集積回路装置
JP3459192B2 (ja) * 1999-03-26 2003-10-20 沖電気工業株式会社 半導体集積回路
JP3633354B2 (ja) * 1999-03-29 2005-03-30 株式会社日立製作所 半導体装置
KR100316713B1 (ko) * 1999-06-26 2001-12-12 윤종용 반도체 메모리 장치 및 이에 적합한 구동신호 발생기
JP2001118999A (ja) * 1999-10-15 2001-04-27 Hitachi Ltd ダイナミック型ｒａｍと半導体装置
JP4427847B2 (ja) * 1999-11-04 2010-03-10 エルピーダメモリ株式会社 ダイナミック型ｒａｍと半導体装置
KR100313087B1 (ko) * 1999-12-21 2001-11-07 박종섭 복합 메모리 소자의 워드라인 구동회로
JP2001357670A (ja) * 2000-04-14 2001-12-26 Mitsubishi Electric Corp 半導体記憶装置
KR100378685B1 (ko) * 2000-12-29 2003-04-07 주식회사 하이닉스반도체 반도체 메모리 장치 및 그의 센스 앰프 제어 회로
DE10132849A1 (de) 2001-07-06 2003-01-23 Infineon Technologies Ag Halbleiterspeichereinrichtung
JP2003197769A (ja) * 2001-12-21 2003-07-11 Mitsubishi Electric Corp 半導体記憶装置
JP4328495B2 (ja) * 2002-05-23 2009-09-09 エルピーダメモリ株式会社 半導体メモリ装置
JP4397166B2 (ja) * 2003-01-28 2010-01-13 株式会社ルネサステクノロジ 半導体記憶装置
KR100620658B1 (ko) * 2004-05-17 2006-09-14 주식회사 하이닉스반도체 나노 튜브 셀 및 그 나노 튜브 셀과 이중 비트라인 센싱구조를 갖는 셀 어레이 회로
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KR100615575B1 (ko) * 2004-09-10 2006-08-25 삼성전자주식회사 반도체 메모리 장치 및 이 장치의 배치 방법
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US7477075B2 (en) * 2006-05-05 2009-01-13 International Business Machines Corporation CMOS output driver using floating wells to prevent leakage current
JP2006270126A (ja) * 2006-06-22 2006-10-05 Matsushita Electric Ind Co Ltd 半導体集積回路装置
JP2006313620A (ja) * 2006-06-22 2006-11-16 Matsushita Electric Ind Co Ltd 半導体集積回路装置の駆動方法
KR100734323B1 (ko) * 2006-06-28 2007-07-02 삼성전자주식회사 분산 배치된 데이터 입출력 라인들을 가지는 반도체 메모리장치
US8558349B2 (en) * 2006-08-11 2013-10-15 System General Corp. Integrated circuit for a high-side transistor driver
US7447071B2 (en) * 2006-11-08 2008-11-04 Atmel Corporation Low voltage column decoder sharing a memory array p-well
JP2009016809A (ja) * 2007-06-07 2009-01-22 Toshiba Corp 半導体記憶装置
KR101330710B1 (ko) * 2007-11-01 2013-11-19 삼성전자주식회사 플래시 메모리 장치
JP2011048876A (ja) * 2009-08-27 2011-03-10 Renesas Electronics Corp 半導体記憶装置及びその制御方法
JP2011096327A (ja) * 2009-10-30 2011-05-12 Elpida Memory Inc 半導体装置
US8737157B2 (en) * 2010-05-05 2014-05-27 Micron Technology, Inc. Memory device word line drivers and methods
KR20110131721A (ko) 2010-05-31 2011-12-07 주식회사 하이닉스반도체 반도체 메모리 장치
US8692333B2 (en) * 2010-08-12 2014-04-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device for word line driver with efficient routing of conductor for decreased gate resistance
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JP2015038801A (ja) * 2014-09-29 2015-02-26 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体記憶装置
US10032505B2 (en) 2015-07-13 2018-07-24 International Business Machines Corporation Dynamic random access memory with pseudo differential sensing
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170109692A (ko) * 2011-07-29 2017-09-29 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치 및 반도체 장치의 제조 방법
US9865604B2 (en) 2011-07-29 2018-01-09 Renesas Electronics Corporation Semiconductor device and method of manufacturing semiconductor device
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Also Published As

Publication number Publication date
JP3666671B2 (ja) 2005-06-29
TW301726B (enExample) 1997-04-01
US5777927A (en) 1998-07-07
JPH08181292A (ja) 1996-07-12
USRE38944E1 (en) 2006-01-24
USRE42659E1 (en) 2011-08-30
USRE41379E1 (en) 2010-06-15
USRE40356E1 (en) 2008-06-03
US5604697A (en) 1997-02-18
US5966341A (en) 1999-10-12
KR960025724A (ko) 1996-07-20

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