JP5727859B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5727859B2 JP5727859B2 JP2011110948A JP2011110948A JP5727859B2 JP 5727859 B2 JP5727859 B2 JP 5727859B2 JP 2011110948 A JP2011110948 A JP 2011110948A JP 2011110948 A JP2011110948 A JP 2011110948A JP 5727859 B2 JP5727859 B2 JP 5727859B2
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- transistor
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- conductive film
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H—ELECTRICITY
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- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/18—Circuits for erasing optically
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
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Description
図1(A)に、本発明の一態様に係る記憶装置のメモリセルの構成を、一例として回路図で示す。図1(A)に示す回路図では、メモリセル101が、記憶素子として機能するトランジスタ102と、スイッチング素子として機能するトランジスタ103と、容量素子104とを有する。記憶素子として機能するトランジスタ102は、ゲート電極と活性層の間に形成されるゲート容量に、電荷を蓄積させることで、データを記憶する。
本実施の形態では、本発明の一態様に係る記憶装置が有するメモリセルの、具体的な構成の一例について説明する。なお、本実施の形態では、図2(C)に示す回路構成を有したメモリセルを例に挙げて、その構造について説明する。
本実施の形態では、スイッチング素子として機能するトランジスタ103の、図1(D)と異なる構成の一例について説明する。
本実施の形態では、記憶部の具体的な構成と、その動作について説明する。
本実施の形態では、記憶部の具体的な構成と、その動作について説明する。
図9に、本発明の一態様に係る記憶装置の構成を、一例としてブロック図で示す。図9に示す記憶装置300は、メモリセルが複数設けられている記憶部301と、記憶部301の動作を制御する駆動回路302とを有する。
本実施の形態では、読み出し回路の具体的な構成の一例について説明する。
本実施の形態では、トランジスタのオフ電流の算出例について説明する。
本実施の形態では、本発明の半導体装置の一つであるRFタグの、構成の一例について説明する。
本実施の形態では、本発明の一態様に係る記憶装置を用いた半導体装置の一つである、携帯型の記憶媒体の一例について説明する。
102 トランジスタ
103 トランジスタ
104 容量素子
105 容量素子
106 トランジスタ
110 基板
111 絶縁膜
112 電極
113 絶縁膜
114 電極
115 ゲート電極
116 絶縁膜
117 活性層
118 ソース電極
119 ドレイン電極
120 絶縁膜
121 絶縁膜
122 絶縁膜
123 配線
130 導電膜
131 導電膜
132 活性層
133 絶縁膜
134 ゲート電極
135 導電膜
136 活性層
137 ゲート電極
138 コンタクトホール
139 絶縁膜
140 コンタクトホール
141 導電膜
142 コンタクトホール
143 コンタクトホール
144 導電膜
150 ゲート電極
151 絶縁膜
152 活性層
153 チャネル保護膜
154 ソース電極
155 ドレイン電極
156 絶縁膜
160 ゲート電極
161 絶縁膜
162 活性層
164 ソース電極
165 ドレイン電極
166 絶縁膜
200 記憶部
201 記憶部
260 トランジスタ
261 トランジスタ
262 オペアンプ
300 記憶装置
301 記憶部
302 駆動回路
303 読み出し回路
304 ワード線駆動回路
305 データ線駆動回路
306 制御回路
307 デコーダ
308 レベルシフタ
309 バッファ
310 デコーダ
311 レベルシフタ
312 セレクタ
550 RFタグ
551 アンテナ回路
552 集積回路
553 電源回路
554 復調回路
555 変調回路
556 レギュレータ
557 演算回路
558 記憶装置
559 昇圧回路
701 記憶装置
702 コネクタ
703 インターフェース
704 発光ダイオード
705 コントローラ
706 プリント配線基板
707 カバー材
801 測定系
811 トランジスタ
812 トランジスタ
813 容量素子
814 トランジスタ
815 トランジスタ
7031 筐体
7032 筐体
7033 表示部
7034 表示部
7035 マイクロホン
7036 スピーカー
7037 操作キー
7038 スタイラス
7041 筐体
7042 表示部
7043 音声入力部
7044 音声出力部
7045 操作キー
7046 受光部
7051 筐体
7052 表示部
7053 操作キー
Claims (4)
- 第1の半導体と、第2の半導体と、第1の導電膜と、第2の導電膜と、第3の導電膜と、第4の導電膜と、第5の導電膜と、第6の導電膜と、第7の導電膜と、第8の導電膜と、第9の導電膜と、を有し、
前記第1の半導体は、第1のトランジスタのチャネルとして機能する領域を有し、
前記第1の導電膜は、前記第1のトランジスタのゲートとして機能する領域を有し、
前記第2の導電膜は、前記第1のトランジスタのソースまたはドレインの一方として機能する領域を有し、
前記第3の導電膜は、前記第1のトランジスタのソースまたはドレインの他方として機能する領域を有し、
前記第2の半導体は、第2のトランジスタのチャネルとして機能する領域を有し、
前記第4の導電膜は、前記第2のトランジスタのゲートとして機能する領域を有し、
前記第5の導電膜は、容量素子の第1の電極として機能する領域を有し、
前記第5の導電膜は、遮光性を有し、
前記第5の導電膜は、前記第1のトランジスタのチャネルとして機能する領域と重なる領域を有し、
前記第6の導電膜は、前記容量素子の第2の電極として機能する領域を有し、
前記第7の導電膜は、遮光性を有し、
前記第7の導電膜は、前記第1のトランジスタのチャネルとして機能する領域と重なる領域を有し、
前記第8の導電膜は、前記第2のトランジスタのソースまたはドレインの一方として機能する領域を有し、
前記第9の導電膜は、前記第2のトランジスタのソースまたはドレインの他方として機能する領域を有し、
前記第4の導電膜は、前記第2の導電膜と電気的に接続されており、
前記第4の導電膜は、前記第5の導電膜と電気的に接続されており、
前記第1の半導体は、酸化物半導体を含み、
前記第2の半導体は、シリコンを含むことを特徴とする半導体装置。 - 請求項1において、
前記第5の導電膜及び前記第6の導電膜は、前記第1のトランジスタのチャネルとして機能する領域の下方に設けられることを特徴とする半導体装置。 - 請求項1又は2において、
前記第1の半導体は、前記第1の半導体の表面に対して略垂直方向にc軸配向した結晶を有することを特徴とする半導体装置。 - 請求項1乃至3のいずれか一項において、
前記第1の半導体の下方に絶縁膜を有し、
前記絶縁膜は、平坦な表面を有することを特徴とする半導体装置。
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WO2011145468A1 (en) | 2011-11-24 |
JP2014207472A (ja) | 2014-10-30 |
JP2017195398A (ja) | 2017-10-26 |
JP2019204966A (ja) | 2019-11-28 |
TW201214629A (en) | 2012-04-01 |
JP6564814B2 (ja) | 2019-08-21 |
JP2022177063A (ja) | 2022-11-30 |
JP5190556B2 (ja) | 2013-04-24 |
US20110284838A1 (en) | 2011-11-24 |
JP6162776B2 (ja) | 2017-07-12 |
US9299723B2 (en) | 2016-03-29 |
JP2012256941A (ja) | 2012-12-27 |
TWI570846B (zh) | 2017-02-11 |
JP5782165B2 (ja) | 2015-09-24 |
JP2021177560A (ja) | 2021-11-11 |
JP2015195402A (ja) | 2015-11-05 |
JP2023100741A (ja) | 2023-07-19 |
JP2016042591A (ja) | 2016-03-31 |
JP2012009839A (ja) | 2012-01-12 |
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