JP5532303B2 - 半導体デバイスのクリティカルディメンジョンを縮小する方法 - Google Patents
半導体デバイスのクリティカルディメンジョンを縮小する方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0338—Process specially adapted to improve the resolution of the mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3088—Process specially adapted to improve the resolution of the mask
Description
本出願は、2006年11月29日に出願されたUnited States Patent Application Serial No.11/606613, "METHODS TO REDUCE THE CRITICAL DIMENSION OF SEMICONDUCTOR DEVICES AND PARTIALLY FABRICATED SEMICONDUCTOR DEVICES HAVING REDUCED CRITICAL DIMENSIONS" 「半導体デバイスのクリティカルディメンジョンを縮小する方法、及び、部分的に作製される縮小クリティカルディメンジョンを有する半導体デバイス」の出願日の利益を主張する。
本発明の実施形態は、一般的には、半導体デバイスの作製に関し、より詳細には、半導体デバイスのクリティカルディメンジョン(CD)を縮小する方法、及び部分的に作製される縮小クリティカルディメンジョンを有する半導体デバイスに関する。
Claims (16)
- ターゲット層上に複数の加工を形成する方法であって、
前記ターゲット層上に中間層を形成するステップと、
前記中間層上に無反射層を形成するステップと、
前記無反射層上にレジスト層を形成するステップと、
前記レジスト層に複数の開口を形成するステップと、
前記レジスト層の複数部分の複数のサイドウォールに第一組のスペーサを形成するステップと、
前記第一組のスペーサによってマスクされる複数部分を除いて前記ターゲット層の複数部分を露出するステップと、
前記第一組のスペーサの下にある前記中間層の複数部分を露出するステップと、
前記中間層の前記露出された複数部分のサイドウォール上に第二組のスペーサを形成するステップと、
前記中間層の前記露出された複数部分を除去するステップと、
前記ターゲット層の露出された複数部分に複数の加工を形成するステップと、
を含む方法。 - 前記ターゲット層の露出された複数部分に複数の加工を形成するステップは、前記レジスト層内の前記複数の開口のクリティカルディメンジョンよりも小さなクリティカルディメンジョンを有する前記複数の加工を形成するステップを含む、
ことを特徴とする、請求項1に記載の方法。 - 前記レジスト層に複数の開口を形成するステップは、クリティカルディメンジョンとして隣接部分間の間隔xを有する前記複数の開口を形成するステップ、及びクリティカルディメンジョンとして幅xを有する前記レジスト層の複数部分を生成するステップを含む、
ことを特徴とする、請求項1に記載の方法。 - 前記ターゲット層の露出された複数部分に複数の加工を形成するステップは、幅x/3に等しいクリティカルディメンジョンを有する複数の加工を形成するステップを含む、
ことを特徴とする、請求項3に記載の方法。 - 前記レジスト層に複数の開口を形成するステップは、隣接部分間の間隔5x/4のクリティカルディメンジョンを有する前記複数の開口を形成するステップと、幅3x/4のクリティカルディメンジョンを有する前記レジスト層の複数部分を生成するステップとを含む、
ことを特徴とする、請求項1に記載の方法。 - 前記ターゲット層の露出された複数部分に複数の加工を形成するステップは、幅x/4に等しいクリティカルディメンジョンを有する複数の加工を形成するステップを含む、
ことを特徴とする、請求項1に記載の方法。 - 前記第一組のスペーサを形成するステップは、前記ターゲット層上に形成される複数の加工のクリティカルディメンジョンとほぼ等しい厚さにおいてスペーサ材料を堆積するステップを含む、
ことを特徴とする、請求項1に記載の方法。 - 前記第一組のスペーサを形成するステップ、或いは第二組のスペーサを形成するステップは、前記第一組のスペーサ或いは前記第二組のスペーサを酸化シリコン或いは窒化シリコンから形成するステップを含む、
ことを特徴とする、請求項1に記載の方法。 - 前記第一組のスペーサを形成するステップは、前記レジスト層の残る複数部分上にスペーサ材料をコンフォーマルに堆積するステップを含む、
ことを特徴とする、請求項1に記載の方法。 - 前記第一組のスペーサによってマスクされた複数部分を除いて前記ターゲット層の複数部分を露出するステップは、前記第一組のスペーサ間の前記レジスト層の残っている複数部分をエッチングするステップと、前記レジスト層の残っている複数部分の下にある前記無反射層及び前記中間層の複数部分をエッチングするステップとを含む、
ことを特徴とする、請求項1に記載の方法。 - 前記第一組のスペーサの下にある前記中間層の複数部分を露出するステップは、前記第一組のスペーサを除去するステップを含む、
ことを特徴とする、請求項1に記載の方法。 - 前記第一組のスペーサを形成するステップは、前記レジスト層の残る複数部分の前記複数のサイドウォール上に複数の垂直なスペーサを形成するステップを含む、
ことを特徴とする、請求項1に記載の方法。 - 前記ターゲット層の前記複数部分を露出する前に、前記レジスト層の残っている複数部分を除去するステップを更に含む、
ことを特徴とする、請求項1に記載の方法。 - 前記中間層の複数部分を露出する前に、前記第一組のスペーサを除去するステップを更に含む、
ことを特徴とする、請求項1に記載の方法。 - 前記第二組のスペーサを形成するステップは、前記第一組のスペーサと同一の材料から前記第二組のスペーサを形成するステップを含む、
ことを特徴とする、請求項1に記載の方法。 - 前記ターゲット層の露出される複数部分内に複数の加工を形成するステップは、前記第一組のスペーサの厚さとほぼ等しいクリティカルディメンジョンを有する前記複数の加工を形成するステップを含む、
ことを特徴とする、請求項1に記載の方法。
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US11/606,613 | 2006-11-29 | ||
US11/606,613 US7807575B2 (en) | 2006-11-29 | 2006-11-29 | Methods to reduce the critical dimension of semiconductor devices |
PCT/US2007/085371 WO2008067228A1 (en) | 2006-11-29 | 2007-11-21 | Methods to reduce the critical dimension of semiconductor devices and partially fabricated semiconductor devices having reduced critical dimensions |
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JP5532303B2 true JP5532303B2 (ja) | 2014-06-25 |
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EP (1) | EP2095402B1 (ja) |
JP (1) | JP5532303B2 (ja) |
KR (1) | KR101091298B1 (ja) |
CN (1) | CN101542685B (ja) |
TW (1) | TWI356446B (ja) |
WO (1) | WO2008067228A1 (ja) |
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US20110006402A1 (en) | 2011-01-13 |
WO2008067228B1 (en) | 2008-07-24 |
US8338304B2 (en) | 2012-12-25 |
EP2095402B1 (en) | 2016-04-06 |
KR20090090327A (ko) | 2009-08-25 |
EP2095402A1 (en) | 2009-09-02 |
US20080122125A1 (en) | 2008-05-29 |
JP2010511306A (ja) | 2010-04-08 |
CN101542685A (zh) | 2009-09-23 |
TWI356446B (en) | 2012-01-11 |
US8836083B2 (en) | 2014-09-16 |
US7807575B2 (en) | 2010-10-05 |
TW200834660A (en) | 2008-08-16 |
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