JP5525975B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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JP5525975B2
JP5525975B2 JP2010201897A JP2010201897A JP5525975B2 JP 5525975 B2 JP5525975 B2 JP 5525975B2 JP 2010201897 A JP2010201897 A JP 2010201897A JP 2010201897 A JP2010201897 A JP 2010201897A JP 5525975 B2 JP5525975 B2 JP 5525975B2
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transistor
wiring
signal
circuit
potential
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JP2011082967A (ja
JP2011082967A5 (enExample
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肇 木村
敦司 梅崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
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    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
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    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1368Active matrix addressed cells in which the switching element is a three-electrode device
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    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
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    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
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    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
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    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
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    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • G02F1/134309Electrodes characterised by their geometrical arrangement
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00Command of the display device
    • G09G2310/02Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0243Details of the generation of driving signals
    • G09G2310/0251Precharge or discharge of pixel before applying new pixel voltage
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00Command of the display device
    • G09G2310/08Details of timing specific for flat panels, other than clock recovery
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00Control of display operating conditions
    • G09G2320/04Maintaining the quality of display appearance
    • G09G2320/043Preventing or counteracting the effects of ageing
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02Details of power systems and of start or stop of display operation
    • G09G2330/021Power management, e.g. power saving
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/34Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
    • G09G3/36Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
    • G09G3/3611Control of matrices with row and column drivers
    • G09G3/3674Details of drivers for scan electrodes
    • G09G3/3677Details of drivers for scan electrodes suitable for active matrices only

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Power Engineering (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal (AREA)
  • Liquid Crystal Display Device Control (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Shift Register Type Memory (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electronic Switches (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of El Displays (AREA)
  • Led Device Packages (AREA)
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Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9153341B2 (en) * 2005-10-18 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Shift register, semiconductor device, display device, and electronic device
JP5540430B2 (ja) * 2009-04-14 2014-07-02 Nltテクノロジー株式会社 走査線駆動回路、表示装置及び走査線駆動方法
TWI783356B (zh) 2009-09-10 2022-11-11 日商半導體能源研究所股份有限公司 半導體裝置和顯示裝置
CN102024410B (zh) * 2009-09-16 2014-10-22 株式会社半导体能源研究所 半导体装置及电子设备
US8854867B2 (en) 2011-04-13 2014-10-07 Semiconductor Energy Laboratory Co., Ltd. Memory device and driving method of the memory device
US8471249B2 (en) * 2011-05-10 2013-06-25 International Business Machines Corporation Carbon field effect transistors having charged monolayers to reduce parasitic resistance
TWI562156B (en) * 2011-05-13 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device
US9030837B2 (en) 2011-06-10 2015-05-12 Scott Moncrieff Injection molded control panel with in-molded decorated plastic film that includes an internal connector
WO2013054823A1 (en) * 2011-10-14 2013-04-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102072244B1 (ko) * 2011-11-30 2020-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP6285150B2 (ja) * 2012-11-16 2018-02-28 株式会社半導体エネルギー研究所 半導体装置
US10199006B2 (en) 2014-04-24 2019-02-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display module, and electronic device
KR102223438B1 (ko) * 2014-07-03 2021-03-05 엘지디스플레이 주식회사 터치스크린 패널 일체형 표시장치 및 표시패널
KR102397388B1 (ko) * 2014-07-24 2022-05-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 모듈 및 전자 기기
JP6521794B2 (ja) 2014-09-03 2019-05-29 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
KR102770262B1 (ko) * 2014-09-12 2025-02-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
JP6618779B2 (ja) * 2014-11-28 2019-12-11 株式会社半導体エネルギー研究所 半導体装置
US20160155849A1 (en) 2014-12-02 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, module, and electronic device
CN104575425B (zh) * 2015-01-09 2017-04-12 深圳市华星光电技术有限公司 扫描驱动电路及其与非门逻辑运算电路
US20160358566A1 (en) * 2015-06-08 2016-12-08 Boe Technology Group Co., Ltd. Shift register unit and driving method thereof, gate driving circuit and display device
US10332446B2 (en) * 2015-12-03 2019-06-25 Innolux Corporation Driving circuit of active-matrix organic light-emitting diode with hybrid transistors
CN205621414U (zh) * 2016-04-26 2016-10-05 京东方科技集团股份有限公司 静电放电电路、阵列基板和显示装置
JP6903476B2 (ja) 2017-04-20 2021-07-14 株式会社ジャパンディスプレイ 表示装置
CN106950775A (zh) * 2017-05-16 2017-07-14 京东方科技集团股份有限公司 一种阵列基板和显示装置
JP6872795B2 (ja) * 2017-10-05 2021-05-19 株式会社Joled 表示装置
KR20200087854A (ko) * 2017-11-27 2020-07-21 선전 로욜 테크놀로지스 컴퍼니 리미티드 Tft 기판, esd 보호 회로 및 tft 기판의 제조 방법
CN112334867B (zh) 2018-05-24 2025-11-11 纽约州立大学研究基金会 电容传感器
TWI723470B (zh) 2018-07-31 2021-04-01 台灣積體電路製造股份有限公司 驅動電路、積體電路、及操作驅動電路的方法
US11201613B2 (en) 2018-07-31 2021-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. Driver circuit and method of operating the same
JP7383623B2 (ja) * 2018-09-21 2023-11-20 株式会社半導体エネルギー研究所 フリップ・フロップ回路、駆動回路、表示パネル、表示装置、入出力装置、情報処理装置
CN111754948A (zh) * 2019-03-29 2020-10-09 鸿富锦精密工业(深圳)有限公司 栅极扫描单元电路、栅极扫描电路及显示面板
CN110690228B (zh) * 2019-09-06 2022-03-08 深圳市华星光电半导体显示技术有限公司 阵列基板及显示面板
CN110707100B (zh) * 2019-10-16 2021-12-31 友达光电(昆山)有限公司 显示面板
EP4053833A4 (en) * 2019-10-28 2022-10-12 BOE Technology Group Co., Ltd. SLIDER REGISTER UNIT AND DRIVE METHOD THEREOF, GATE DRIVER CIRCUIT AND DISPLAY DEVICE
TWI739629B (zh) * 2019-11-01 2021-09-11 立積電子股份有限公司 具有靜電放電保護機制的積體電路
US11705725B2 (en) 2019-11-01 2023-07-18 Richwave Technology Corp. Integrated circuit with electrostatic discharge protection
CN111276952B (zh) * 2020-01-19 2022-03-08 上海华虹宏力半导体制造有限公司 一种esd保护电路
CN115885389A (zh) 2020-08-27 2023-03-31 株式会社半导体能源研究所 半导体装置、显示装置以及电子设备
US11810918B2 (en) * 2020-12-07 2023-11-07 International Business Machines Corporation Stacked vertical transport field-effect transistor logic gate structures with shared epitaxial layers
US11699391B2 (en) 2021-05-13 2023-07-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display apparatus, and electronic device
TWI775635B (zh) * 2021-10-07 2022-08-21 世界先進積體電路股份有限公司 電子裝置
US11728644B2 (en) 2021-11-16 2023-08-15 Vanguard International Semiconductor Corporation Electronic device and electrostatic discharge protection circuit
CN115938324B (zh) * 2022-11-22 2025-07-25 武汉华星光电半导体显示技术有限公司 Goa电路及显示面板

Family Cites Families (109)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3506851A (en) 1966-12-14 1970-04-14 North American Rockwell Field effect transistor driver using capacitor feedback
JPS52119160A (en) 1976-03-31 1977-10-06 Nec Corp Semiconductor circuit with insulating gate type field dffect transisto r
JPS55156427A (en) 1979-05-23 1980-12-05 Sharp Corp Bootstrap buffer circuit
JPS58151719A (ja) 1982-03-05 1983-09-09 Sony Corp パルス発生回路
JPS61265798A (ja) 1985-05-20 1986-11-25 Fujitsu Ltd 半導体記憶装置
FR2720185B1 (fr) 1994-05-17 1996-07-05 Thomson Lcd Registre à décalage utilisant des transistors M.I.S. de même polarité.
US5949398A (en) 1996-04-12 1999-09-07 Thomson Multimedia S.A. Select line driver for a display matrix with toggling backplane
KR100242244B1 (ko) 1997-08-09 2000-02-01 구본준 스캐닝 회로
KR100438525B1 (ko) 1999-02-09 2004-07-03 엘지.필립스 엘시디 주식회사 쉬프트 레지스터 회로
GB2343068B (en) 1998-10-21 2000-12-13 Lg Philips Lcd Co Ltd Shift register
KR100281336B1 (ko) 1998-10-21 2001-03-02 구본준 쉬프트 레지스터 회로
JP3823614B2 (ja) * 1999-07-01 2006-09-20 カシオ計算機株式会社 シフトレジスタ及び電子装置
JP2001273785A (ja) * 2000-03-29 2001-10-05 Casio Comput Co Ltd シフトレジスタ及び電子装置
TW525139B (en) 2001-02-13 2003-03-21 Samsung Electronics Co Ltd Shift register, liquid crystal display using the same and method for driving gate line and data line blocks thereof
KR100752602B1 (ko) 2001-02-13 2007-08-29 삼성전자주식회사 쉬프트 레지스터와, 이를 이용한 액정 표시 장치
JP4761643B2 (ja) 2001-04-13 2011-08-31 東芝モバイルディスプレイ株式会社 シフトレジスタ、駆動回路、電極基板及び平面表示装置
JP4785271B2 (ja) 2001-04-27 2011-10-05 株式会社半導体エネルギー研究所 液晶表示装置、電子機器
JP4439761B2 (ja) 2001-05-11 2010-03-24 株式会社半導体エネルギー研究所 液晶表示装置、電子機器
TW582005B (en) 2001-05-29 2004-04-01 Semiconductor Energy Lab Pulse output circuit, shift register, and display device
SG119161A1 (en) 2001-07-16 2006-02-28 Semiconductor Energy Lab Light emitting device
US6788108B2 (en) 2001-07-30 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4831895B2 (ja) 2001-08-03 2011-12-07 株式会社半導体エネルギー研究所 半導体装置
JP4397555B2 (ja) 2001-11-30 2010-01-13 株式会社半導体エネルギー研究所 半導体装置、電子機器
JP4069648B2 (ja) 2002-03-15 2008-04-02 カシオ計算機株式会社 半導体装置および表示駆動装置
TWI293444B (en) * 2002-04-08 2008-02-11 Samsung Electronics Co Ltd Liquid crystal display device
JP4302535B2 (ja) 2002-04-08 2009-07-29 サムスン エレクトロニクス カンパニー リミテッド ゲート駆動回路及びこれを有する液晶表示装置
TWI298478B (en) 2002-06-15 2008-07-01 Samsung Electronics Co Ltd Method of driving a shift register, a shift register, a liquid crystal display device having the shift register
JP2006054499A (ja) 2002-07-09 2006-02-23 Renesas Technology Corp 半導体集積回路装置及びそれを用いた半導体システム
JP3764135B2 (ja) 2002-10-31 2006-04-05 Necエレクトロニクス株式会社 レベルシフタ
JP4460822B2 (ja) 2002-11-29 2010-05-12 東芝モバイルディスプレイ株式会社 双方向シフトレジスタ、これを用いた駆動回路、平面表示装置
JP4339103B2 (ja) 2002-12-25 2009-10-07 株式会社半導体エネルギー研究所 半導体装置及び表示装置
JP4425547B2 (ja) 2003-01-17 2010-03-03 株式会社半導体エネルギー研究所 パルス出力回路、シフトレジスタ、および電子機器
KR100917009B1 (ko) * 2003-02-10 2009-09-10 삼성전자주식회사 트랜지스터의 구동 방법과 쉬프트 레지스터의 구동 방법및 이를 수행하기 위한 쉬프트 레지스터
US7369111B2 (en) * 2003-04-29 2008-05-06 Samsung Electronics Co., Ltd. Gate driving circuit and display apparatus having the same
US7486269B2 (en) 2003-07-09 2009-02-03 Samsung Electronics Co., Ltd. Shift register, scan driving circuit and display apparatus having the same
KR101012972B1 (ko) * 2003-12-30 2011-02-10 엘지디스플레이 주식회사 액티브 매트릭스 표시장치
KR20050079718A (ko) 2004-02-06 2005-08-11 삼성전자주식회사 시프트 레지스터와 이를 갖는 표시 장치
KR101023726B1 (ko) 2004-03-31 2011-03-25 엘지디스플레이 주식회사 쉬프트 레지스터
KR20050114850A (ko) 2004-06-02 2005-12-07 엘지.필립스 엘시디 주식회사 쉬프트 레지스터와 이를 이용한 액정표시장치
KR101026807B1 (ko) 2004-06-09 2011-04-04 삼성전자주식회사 표시 장치용 구동 장치 및 표시판
KR101034780B1 (ko) 2004-06-30 2011-05-17 삼성전자주식회사 시프트 레지스터와, 이를 갖는 표시 장치 및 시프트레지스터 구동방법
US8605027B2 (en) * 2004-06-30 2013-12-10 Samsung Display Co., Ltd. Shift register, display device having the same and method of driving the same
JP2006107807A (ja) * 2004-10-01 2006-04-20 Matsushita Electric Ind Co Ltd 加熱調理器
JP2006164477A (ja) 2004-12-10 2006-06-22 Casio Comput Co Ltd シフトレジスタ、該シフトレジスタの駆動制御方法及び該シフトレジスタを備えた表示駆動装置
KR101127813B1 (ko) 2004-12-29 2012-03-26 엘지디스플레이 주식회사 쉬프트 레지스터와 이를 이용한 액정 표시장치
KR101246023B1 (ko) 2005-01-06 2013-03-26 삼성디스플레이 주식회사 어레이 기판 및 이를 갖는 표시장치
JP5190722B2 (ja) 2005-05-20 2013-04-24 Nltテクノロジー株式会社 ブートストラップ回路並びにこれを用いたシフトレジスタ、走査回路及び表示装置
KR101107703B1 (ko) 2005-05-26 2012-01-25 엘지디스플레이 주식회사 쉬프트 레지스터
KR101143004B1 (ko) 2005-06-13 2012-05-11 삼성전자주식회사 시프트 레지스터 및 이를 포함하는 표시 장치
US7203264B2 (en) 2005-06-28 2007-04-10 Wintek Corporation High-stability shift circuit using amorphous silicon thin film transistors
KR101182323B1 (ko) * 2005-06-30 2012-09-20 엘지디스플레이 주식회사 쉬프트 레지스터
JP5100993B2 (ja) 2005-09-09 2012-12-19 ティーピーオー、ホンコン、ホールディング、リミテッド 液晶駆動回路およびこれを有する液晶表示装置
KR100658269B1 (ko) 2005-09-20 2006-12-14 삼성에스디아이 주식회사 주사 구동회로와 이를 이용한 유기 전계발광 장치
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5064747B2 (ja) 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
US9153341B2 (en) 2005-10-18 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Shift register, semiconductor device, display device, and electronic device
US7663592B2 (en) 2005-10-19 2010-02-16 Tpo Displays Corp. Systems involving signal driving circuits for driving displays
KR101437086B1 (ko) 2006-01-07 2014-09-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치와, 이 반도체장치를 구비한 표시장치 및 전자기기
CN100520895C (zh) * 2006-02-07 2009-07-29 友达光电股份有限公司 根据后一级信号开启反馈电路的移位寄存器
JP5128102B2 (ja) 2006-02-23 2013-01-23 三菱電機株式会社 シフトレジスタ回路およびそれを備える画像表示装置
JP4277874B2 (ja) 2006-05-23 2009-06-10 エプソンイメージングデバイス株式会社 電気光学装置の製造方法
JP5386069B2 (ja) 2006-06-02 2014-01-15 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
US8154493B2 (en) 2006-06-02 2012-04-10 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device, driving method of the same, and electronic device using the same
JP5210546B2 (ja) 2006-06-02 2013-06-12 株式会社半導体エネルギー研究所 液晶表示装置
US8330492B2 (en) 2006-06-02 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US7936332B2 (en) 2006-06-21 2011-05-03 Samsung Electronics Co., Ltd. Gate driving circuit having reduced ripple effect and display apparatus having the same
EP1895545B1 (en) 2006-08-31 2014-04-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
JP5079425B2 (ja) 2006-08-31 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器
TWI585730B (zh) 2006-09-29 2017-06-01 半導體能源研究所股份有限公司 顯示裝置和電子裝置
JP5468196B2 (ja) * 2006-09-29 2014-04-09 株式会社半導体エネルギー研究所 半導体装置、表示装置及び液晶表示装置
JP4932415B2 (ja) 2006-09-29 2012-05-16 株式会社半導体エネルギー研究所 半導体装置
JP5079301B2 (ja) 2006-10-26 2012-11-21 三菱電機株式会社 シフトレジスタ回路およびそれを備える画像表示装置
JP4970004B2 (ja) 2006-11-20 2012-07-04 三菱電機株式会社 シフトレジスタ回路およびそれを備える画像表示装置、並びに信号生成回路
US7920668B2 (en) 2007-01-05 2011-04-05 Chimei Innolux Corporation Systems for displaying images by utilizing vertical shift register circuit to generate non-overlapped output signals
KR101326075B1 (ko) 2007-01-12 2013-11-07 삼성디스플레이 주식회사 액정 표시 장치 및 이의 구동 방법
CN101568954B (zh) 2007-01-31 2012-05-30 夏普株式会社 显示装置
JP5090008B2 (ja) 2007-02-07 2012-12-05 三菱電機株式会社 半導体装置およびシフトレジスタ回路
JP4912186B2 (ja) 2007-03-05 2012-04-11 三菱電機株式会社 シフトレジスタ回路およびそれを備える画像表示装置
KR20080083480A (ko) * 2007-03-12 2008-09-18 삼성전자주식회사 인버터 및 이를 갖는 백라이트 장치
JP5042077B2 (ja) 2007-04-06 2012-10-03 株式会社半導体エネルギー研究所 表示装置
TWI360094B (en) * 2007-04-25 2012-03-11 Wintek Corp Shift register and liquid crystal display
US8013633B2 (en) 2007-06-20 2011-09-06 Hewlett-Packard Development Company, L.P. Thin film transistor logic
TWI335599B (en) * 2007-07-06 2011-01-01 Chimei Innolux Corp Shift register and liquid crystal display device having same
TW200915290A (en) * 2007-07-24 2009-04-01 Koninkl Philips Electronics Nv A shift register circuit
CN101377956B (zh) * 2007-08-31 2010-12-29 群康科技(深圳)有限公司 移位寄存器及液晶显示器
CN101785065B (zh) * 2007-09-12 2013-05-15 夏普株式会社 移位寄存器
JP2009116206A (ja) 2007-11-09 2009-05-28 Sony Corp El表示パネル及び電子機器
KR101329288B1 (ko) 2007-11-13 2013-11-14 삼성디스플레이 주식회사 게이트 구동용 박막 트랜지스터 및 이를 포함하는 액정표시 장치
KR101451575B1 (ko) 2007-11-15 2014-10-16 엘지디스플레이 주식회사 쉬프트 레지스터
US7910929B2 (en) 2007-12-18 2011-03-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5496500B2 (ja) * 2007-12-18 2014-05-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI383353B (zh) * 2007-12-27 2013-01-21 Chimei Innolux Corp 平面顯示器及其驅動方法
CN101849358A (zh) 2007-12-28 2010-09-29 夏普株式会社 半导体装置和显示装置
JP2009188749A (ja) 2008-02-06 2009-08-20 Sony Corp インバータ回路、シフトレジスタ回路、否定論理和回路、否定論理積回路
TWI380274B (en) 2008-02-21 2012-12-21 Chunghwa Picture Tubes Ltd Shift register and liquid crystal display (lcd)
JP4555358B2 (ja) 2008-03-24 2010-09-29 富士フイルム株式会社 薄膜電界効果型トランジスタおよび表示装置
US8314765B2 (en) 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
KR100963027B1 (ko) 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
KR100963026B1 (ko) 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP4582216B2 (ja) * 2008-07-12 2010-11-17 ソニー株式会社 半導体デバイス、表示パネル及び電子機器
JP5345456B2 (ja) 2008-08-14 2013-11-20 富士フイルム株式会社 薄膜電界効果型トランジスタ
KR101901542B1 (ko) 2008-11-28 2018-09-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치 및 표시 장치를 포함하는 전자 장치
KR101536218B1 (ko) 2008-12-26 2015-07-13 삼성디스플레이 주식회사 게이트 구동회로, 이를 갖는 표시 장치 및 이 게이트 구동회로의 제조 방법
US9741309B2 (en) 2009-01-22 2017-08-22 Semiconductor Energy Laboratory Co., Ltd. Method for driving display device including first to fourth switches
TWI783356B (zh) 2009-09-10 2022-11-11 日商半導體能源研究所股份有限公司 半導體裝置和顯示裝置
JP7721550B2 (ja) 2020-02-26 2025-08-12 ソリューションメディカル,インク. 注射装置
KR20210116754A (ko) 2020-03-13 2021-09-28 삼성디스플레이 주식회사 표시 장치
KR20230014112A (ko) 2021-07-20 2023-01-30 삼성디스플레이 주식회사 전자 장치
KR20230167178A (ko) 2022-05-30 2023-12-08 삼성디스플레이 주식회사 표시 장치

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