JP5216174B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP5216174B2 JP5216174B2 JP2000322062A JP2000322062A JP5216174B2 JP 5216174 B2 JP5216174 B2 JP 5216174B2 JP 2000322062 A JP2000322062 A JP 2000322062A JP 2000322062 A JP2000322062 A JP 2000322062A JP 5216174 B2 JP5216174 B2 JP 5216174B2
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- H—ELECTRICITY
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Description
複数のEL素子と、
前記複数のEL素子を有する複数の画素と、
を有する発光装置であって、
1フレーム期間内における、前記EL素子が発光する期間と前記EL素子の発光輝度とを制御することによって階調表示を行うことを特徴とする発光装置が提供される。
複数のEL素子と、
前記複数のEL素子を有する複数の画素と、
を有する発光装置であって、
1フレーム期間はn個のサブフレーム期間SF1、SF2、…及びSFnとからなっており、
前記n個のサブフレーム期間SF1、SF2、…及びSFnは、アドレス期間Ta1、Ta2、…及びTanとサステイン期間Ts1、Ts2、…及びTsnとをそれぞれ有しており、
前記アドレス期間Ta1、Ta2、…及びTanにおいてデジタルデータ信号が前記複数の画素に入力され、
前記デジタルデータ信号によって、前記サステイン期間Ts1、Ts2、…及びTsnにおいて前記複数のEL素子が発光するか発光しないかが選択され、
前記サステイン期間Ts1、Ts2、…またはTsnのうち、少なくとも1つのサステイン期間Tsp(pは1以上n以下の自然数)におけるEL素子の発光輝度は、サステイン期間Tsp以外の任意のサステイン期間Tsq(qはp以外の、1以上n以下の任意の自然数)におけるEL素子の発光輝度の1/m(mは正数)であり、
前記サステイン期間Tspの長さは2-(p-1)T×m(Tは正の定数)で表され、
前記サステイン期間Tsqの長さは、2-(q-1)Tで表されることを特徴とする発光装置が提供される。
複数のEL素子と、
前記複数のEL素子を有する複数の画素と、
を有する発光装置であって、
1フレーム期間はn個のサブフレーム期間SF1、SF2、…及びSFnとからなっており、
前記n個のサブフレーム期間SF1、SF2、…及びSFnは、アドレス期間Ta1、Ta2、…及びTanとサステイン期間Ts1、Ts2、…及びTsnとをそれぞれ有しており、
前記アドレス期間Ta1、Ta2、…及びTanにおいてデジタルデータ信号が前記複数の画素に入力され、
前記デジタルデータ信号によって、前記サステイン期間Ts1、Ts2、…及びTsnにおいて前記複数のEL素子が発光するか発光しないかが選択され、
前記サステイン期間Ts1、Ts2、…またはTsnのうち、少なくとも1つのサステイン期間Tsp(pは1以上n以下の自然数)におけるEL素子の発光輝度は、サステイン期間Tsp以外の任意のサステイン期間Tsq(qはp以外の、1以上n以下の任意の自然数)におけるEL素子の発光輝度の1/m(mは正数)であり、
前記サステイン期間Tspの長さは2-(p-1)T×m(Tは正の定数)で表され、
前記サステイン期間Tsqの長さは、2-(q-1)Tで表され、
前記複数のEL素子は、第1の電極と、第2の電極と、前記第1の電極と第2の電極の間に設けられたEL層とをそれぞれ有しており、
前記EL素子の発光輝度は、前記第1の電極と前記第2の電極の間にかかるオンのEL駆動電圧によって制御されていることを特徴とする発光装置が提供される。
本願発明の構成を、デジタル駆動方式の時分割階調表示を行うELディスプレイの例を用いて説明する。図4に本願発明の回路構成の一例を示す。
本実施例では、画素部とその周辺に設けられる駆動回路部のTFTを同時に作製する方法について説明する。但し、説明を簡単にするために、駆動回路に関しては基本単位であるCMOS回路を図示することとする。
このことは、後にTFTが完成した時点において、LDD領域とチャネル形成領域とが非常に良好な接合部を形成しうることを意味する。
本実施例では、本願発明におけるELディスプレイの画素の構成について説明する。
発光装置が画像を表示するのに、必要に応じて様々な補正が必要になる場合がある。例えばガンマ補正や自発光素子の発光強度の補正などである。また、CRT用にガンマ補正をかけた信号を扱う場合、逆のガンマ補正が必要となる場合がある。本実施例では、本願発明に用いられるデジタルのビデオ信号に補正をかけることができる補正システムについて説明する。
本願発明のELディスプレイにおいて、EL素子が有するEL層に用いられる材料は、有機EL材料に限定されず、無機EL材料を用いても実施できる。但し、現在の無機EL材料は非常に駆動電圧が高いため、そのような駆動電圧に耐えうる耐圧特性を有するTFTを用いなければならない。
本願発明において、EL層として用いる有機物質は低分子系有機物質であってもポリマー系(高分子系)有機物質であっても良い。低分子系有機物質はAlq3(トリス−8−キノリライト−アルミニウム)、TPD(トリフェニルアミン誘導体)等を中心とした材料が知られている。ポリマー系有機物質として、π共役ポリマー系の物質が挙げられる。代表的には、PPV(ポリフェニレンビニレン)、PVK(ポリビニルカルバゾール)、ポリカーボネート等が挙げられる。
次に図1に示した本願発明のELディスプレイの、別の駆動方法について説明する。ここではnビットデジタル駆動方式により2n階調の表示を行う場合について説明する。なおタイミングチャートは実施の形態で示した場合と同じであるので、図2を参照する。
(実施例10)
次に本願発明のELディスプレイの、別の駆動方法について説明する。ここでは4ビットのデジタルデータ信号により24階調の表示を行う場合について説明する。なおタイミングチャートは実施例2で示した場合と同じであるので、図6を参照する。
本願発明を実施して形成されたELディスプレイ(ELモジュール)は、自発光型であるため液晶表示装置に比べて明るい場所での視認性に優れている。そのため本願発明は直視型のELディスプレイ(ELモジュールを組み込んだ表示ディスプレイを指す)に対して実施することが可能である。ELディスプレイとしてはパソコンモニタ、TV放送受信用モニタ、広告表示モニタ等が挙げられる。
1501 スイッチング用TFT
1504 EL駆動用TFT
1506 EL素子
1508 コンデンサ
Claims (1)
- EL素子と、EL駆動用TFTと、スイッチング用TFTと、を有する複数の画素と、
複数の電源供給線と、
を有する発光装置であって、
1フレーム期間はn個のサブフレーム期間を有し、
各サブフレーム期間は前記各サブフレーム期間に対応する長さを有するサステイン期間を有し、
デジタルデータ信号によって、前記各サステイン期間において前記EL素子が発光するか発光しないかが選択され、
前記電源供給線の電位または前記EL素子が有する対向電極の電位を変化させることにより、少なくとも1つのサステイン期間における前記EL素子の発光輝度は、他のサステイン期間における前記EL素子の発光輝度よりも低く設定され、
前記少なくとも1つのサステイン期間の長さは、前記発光輝度を低くしない場合に比べて、長く設定され、
前記少なくとも1つのサステイン期間の長さと前記少なくとも一つのサステイン期間における前記EL素子の発光輝度との積は、前記各サステイン期間の長さと前記各サステイン期間における前記EL素子の発光輝度との積の中で最も小さく、
前記複数の画素のうち前記電源供給線と垂直方向に隣り合う2つの画素で1つの前記電源供給線を共有しており、
前記電源供給線は、ゲート信号線と平行に設けられていることを特徴とする発光装置。
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