JP5096511B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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JP5096511B2
JP5096511B2 JP2010048937A JP2010048937A JP5096511B2 JP 5096511 B2 JP5096511 B2 JP 5096511B2 JP 2010048937 A JP2010048937 A JP 2010048937A JP 2010048937 A JP2010048937 A JP 2010048937A JP 5096511 B2 JP5096511 B2 JP 5096511B2
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layer
insulating layer
semiconductor
heat treatment
conductive layer
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JP2011009697A5 (https=
JP2011009697A (ja
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宏樹 大原
俊成 佐々木
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
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    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
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  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Optical Filters (AREA)
  • Recrystallisation Techniques (AREA)
  • Dram (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
JP2010048937A 2009-03-12 2010-03-05 半導体装置の作製方法 Expired - Fee Related JP5096511B2 (ja)

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JP2010048937A JP5096511B2 (ja) 2009-03-12 2010-03-05 半導体装置の作製方法

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JP2009058929 2009-03-12
JP2009058929 2009-03-12
JP2009131059 2009-05-29
JP2009131059 2009-05-29
JP2010048937A JP5096511B2 (ja) 2009-03-12 2010-03-05 半導体装置の作製方法

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JP2012206923A Division JP5635050B2 (ja) 2009-03-12 2012-09-20 半導体装置

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JP2011009697A JP2011009697A (ja) 2011-01-13
JP2011009697A5 JP2011009697A5 (https=) 2012-09-13
JP5096511B2 true JP5096511B2 (ja) 2012-12-12

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JP2010048937A Expired - Fee Related JP5096511B2 (ja) 2009-03-12 2010-03-05 半導体装置の作製方法
JP2012206923A Active JP5635050B2 (ja) 2009-03-12 2012-09-20 半導体装置
JP2014210369A Withdrawn JP2015029146A (ja) 2009-03-12 2014-10-15 半導体装置
JP2015175305A Active JP6226927B2 (ja) 2009-03-12 2015-09-07 半導体装置
JP2017149564A Active JP6345853B2 (ja) 2009-03-12 2017-08-02 半導体装置
JP2018098879A Active JP6525426B2 (ja) 2009-03-12 2018-05-23 半導体装置
JP2019087004A Active JP6685450B2 (ja) 2009-03-12 2019-04-29 半導体装置
JP2020063636A Active JP6738980B2 (ja) 2009-03-12 2020-03-31 半導体装置
JP2020123773A Active JP6913215B2 (ja) 2009-03-12 2020-07-20 半導体装置
JP2021113976A Active JP7108753B2 (ja) 2009-03-12 2021-07-09 表示装置
JP2022113628A Active JP7335395B2 (ja) 2009-03-12 2022-07-15 表示装置
JP2023132792A Active JP7576668B2 (ja) 2009-03-12 2023-08-17 表示装置
JP2024185142A Withdrawn JP2025003549A (ja) 2009-03-12 2024-10-21 半導体装置の作製方法

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JP2012206923A Active JP5635050B2 (ja) 2009-03-12 2012-09-20 半導体装置
JP2014210369A Withdrawn JP2015029146A (ja) 2009-03-12 2014-10-15 半導体装置
JP2015175305A Active JP6226927B2 (ja) 2009-03-12 2015-09-07 半導体装置
JP2017149564A Active JP6345853B2 (ja) 2009-03-12 2017-08-02 半導体装置
JP2018098879A Active JP6525426B2 (ja) 2009-03-12 2018-05-23 半導体装置
JP2019087004A Active JP6685450B2 (ja) 2009-03-12 2019-04-29 半導体装置
JP2020063636A Active JP6738980B2 (ja) 2009-03-12 2020-03-31 半導体装置
JP2020123773A Active JP6913215B2 (ja) 2009-03-12 2020-07-20 半導体装置
JP2021113976A Active JP7108753B2 (ja) 2009-03-12 2021-07-09 表示装置
JP2022113628A Active JP7335395B2 (ja) 2009-03-12 2022-07-15 表示装置
JP2023132792A Active JP7576668B2 (ja) 2009-03-12 2023-08-17 表示装置
JP2024185142A Withdrawn JP2025003549A (ja) 2009-03-12 2024-10-21 半導体装置の作製方法

Country Status (7)

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US (2) US8993386B2 (https=)
EP (1) EP2406826B1 (https=)
JP (13) JP5096511B2 (https=)
KR (7) KR102068632B1 (https=)
CN (1) CN102349158B (https=)
TW (1) TWI525707B (https=)
WO (1) WO2010103935A1 (https=)

Cited By (1)

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KR101753974B1 (ko) 2015-08-26 2017-07-19 충북대학교 산학협력단 프리어닐링 공정을 이용한 산화물 트랜지스터 및 그 제조 방법

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TWI556323B (zh) 2009-03-13 2016-11-01 半導體能源研究所股份有限公司 半導體裝置及該半導體裝置的製造方法
KR101809759B1 (ko) 2009-09-24 2018-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자 및 그 제조 방법
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JP5888990B2 (ja) * 2011-01-12 2016-03-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI535032B (zh) * 2011-01-12 2016-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
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TWI624878B (zh) * 2011-03-11 2018-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
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JP2016001712A (ja) * 2013-11-29 2016-01-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
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