JP5089755B2 - 表示装置、及び当該表示装置を具備する電子機器 - Google Patents

表示装置、及び当該表示装置を具備する電子機器 Download PDF

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Publication number
JP5089755B2
JP5089755B2 JP2010250760A JP2010250760A JP5089755B2 JP 5089755 B2 JP5089755 B2 JP 5089755B2 JP 2010250760 A JP2010250760 A JP 2010250760A JP 2010250760 A JP2010250760 A JP 2010250760A JP 5089755 B2 JP5089755 B2 JP 5089755B2
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Prior art keywords
transistor
layer
oxide semiconductor
electrode
gate
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Japanese (ja)
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JP2011141529A5 (enExample
JP2011141529A (ja
Inventor
圭 高橋
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2011141529A5 publication Critical patent/JP2011141529A5/ja
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3266—Details of drivers for scan electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0814—Several active elements per pixel in active matrix panels used for selection purposes, e.g. logical AND for partial update
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809—Several active elements per pixel in active matrix panels
    • G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
    • G09G2310/0264—Details of driving circuits
    • G09G2310/0286—Details of a shift registers arranged for use in a driving circuit
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2310/00—Command of the display device
    • G09G2310/08—Details of timing specific for flat panels, other than clock recovery
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02—Details of power systems and of start or stop of display operation
    • G09G2330/021—Power management, e.g. power saving
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
  • Shift Register Type Memory (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrophonic Musical Instruments (AREA)
JP2010250760A 2009-11-13 2010-11-09 表示装置、及び当該表示装置を具備する電子機器 Active JP5089755B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010250760A JP5089755B2 (ja) 2009-11-13 2010-11-09 表示装置、及び当該表示装置を具備する電子機器

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2009259818 2009-11-13
JP2009259818 2009-11-13
JP2009278995 2009-12-08
JP2009278995 2009-12-08
JP2010250760A JP5089755B2 (ja) 2009-11-13 2010-11-09 表示装置、及び当該表示装置を具備する電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012196743A Division JP2013054357A (ja) 2009-11-13 2012-09-07 表示装置

Publications (3)

Publication Number Publication Date
JP2011141529A JP2011141529A (ja) 2011-07-21
JP2011141529A5 JP2011141529A5 (enExample) 2012-06-07
JP5089755B2 true JP5089755B2 (ja) 2012-12-05

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JP2010250760A Active JP5089755B2 (ja) 2009-11-13 2010-11-09 表示装置、及び当該表示装置を具備する電子機器
JP2012196743A Withdrawn JP2013054357A (ja) 2009-11-13 2012-09-07 表示装置
JP2012265901A Active JP5827613B2 (ja) 2009-11-13 2012-12-05 表示装置
JP2015000892A Withdrawn JP2015111272A (ja) 2009-11-13 2015-01-06 表示装置
JP2016077961A Active JP6313357B2 (ja) 2009-11-13 2016-04-08 表示装置の作製方法
JP2018053709A Withdrawn JP2018124564A (ja) 2009-11-13 2018-03-22 表示装置
JP2019190976A Withdrawn JP2020034926A (ja) 2009-11-13 2019-10-18 表示装置
JP2019206016A Withdrawn JP2020042285A (ja) 2009-11-13 2019-11-14 表示装置
JP2021147575A Active JP7149397B2 (ja) 2009-11-13 2021-09-10 表示装置
JP2022152549A Active JP7315768B2 (ja) 2009-11-13 2022-09-26 表示装置
JP2023115015A Active JP7463602B2 (ja) 2009-11-13 2023-07-13 表示装置
JP2023168367A Active JP7554334B2 (ja) 2009-11-13 2023-09-28 表示装置
JP2023195396A Withdrawn JP2024019186A (ja) 2009-11-13 2023-11-16 表示装置の駆動方法
JP2023195394A Active JP7645342B2 (ja) 2009-11-13 2023-11-16 半導体装置
JP2024052113A Active JP7599598B2 (ja) 2009-11-13 2024-03-27 表示装置
JP2024189857A Active JP7645428B2 (ja) 2009-11-13 2024-10-29 表示装置
JP2025033125A Pending JP2025078728A (ja) 2009-11-13 2025-03-03 表示装置

Family Applications After (16)

Application Number Title Priority Date Filing Date
JP2012196743A Withdrawn JP2013054357A (ja) 2009-11-13 2012-09-07 表示装置
JP2012265901A Active JP5827613B2 (ja) 2009-11-13 2012-12-05 表示装置
JP2015000892A Withdrawn JP2015111272A (ja) 2009-11-13 2015-01-06 表示装置
JP2016077961A Active JP6313357B2 (ja) 2009-11-13 2016-04-08 表示装置の作製方法
JP2018053709A Withdrawn JP2018124564A (ja) 2009-11-13 2018-03-22 表示装置
JP2019190976A Withdrawn JP2020034926A (ja) 2009-11-13 2019-10-18 表示装置
JP2019206016A Withdrawn JP2020042285A (ja) 2009-11-13 2019-11-14 表示装置
JP2021147575A Active JP7149397B2 (ja) 2009-11-13 2021-09-10 表示装置
JP2022152549A Active JP7315768B2 (ja) 2009-11-13 2022-09-26 表示装置
JP2023115015A Active JP7463602B2 (ja) 2009-11-13 2023-07-13 表示装置
JP2023168367A Active JP7554334B2 (ja) 2009-11-13 2023-09-28 表示装置
JP2023195396A Withdrawn JP2024019186A (ja) 2009-11-13 2023-11-16 表示装置の駆動方法
JP2023195394A Active JP7645342B2 (ja) 2009-11-13 2023-11-16 半導体装置
JP2024052113A Active JP7599598B2 (ja) 2009-11-13 2024-03-27 表示装置
JP2024189857A Active JP7645428B2 (ja) 2009-11-13 2024-10-29 表示装置
JP2025033125A Pending JP2025078728A (ja) 2009-11-13 2025-03-03 表示装置

Country Status (6)

Country Link
US (2) US9520411B2 (enExample)
JP (17) JP5089755B2 (enExample)
KR (15) KR102329497B1 (enExample)
CN (2) CN105655351B (enExample)
TW (4) TWI622032B (enExample)
WO (1) WO2011058885A1 (enExample)

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KR101671210B1 (ko) * 2009-03-06 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
CN116343705B (zh) 2009-10-16 2025-08-26 株式会社半导体能源研究所 显示设备
CN102576172B (zh) * 2009-10-30 2016-01-27 株式会社半导体能源研究所 液晶显示设备、其驱动方法以及包括该液晶显示设备的电子电器
KR102329497B1 (ko) * 2009-11-13 2021-11-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 이 표시 장치를 구비한 전자 기기
WO2011065210A1 (en) 2009-11-28 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
KR102089200B1 (ko) * 2009-11-28 2020-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
CN105206514B (zh) 2009-11-28 2018-04-10 株式会社半导体能源研究所 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法
WO2011074379A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and driving method thereof
KR101872678B1 (ko) 2009-12-28 2018-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 기기
KR101842865B1 (ko) * 2009-12-28 2018-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 기기
WO2011081041A1 (en) 2009-12-28 2011-07-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
KR101750126B1 (ko) * 2010-01-20 2017-06-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법 및 액정 표시 장치
KR101842860B1 (ko) 2010-01-20 2018-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법
US9000438B2 (en) 2010-02-26 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
WO2011108346A1 (en) * 2010-03-05 2011-09-09 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of oxide semiconductor film and manufacturing method of transistor
WO2011125455A1 (en) * 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor memory device
CN102213854B (zh) 2010-04-09 2015-08-05 株式会社半导体能源研究所 液晶显示装置及电子设备
US9349325B2 (en) 2010-04-28 2016-05-24 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
US8698852B2 (en) 2010-05-20 2014-04-15 Semiconductor Energy Laboratory Co., Ltd. Display device and method for driving the same
TWI562379B (en) 2010-11-30 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing semiconductor device
TWI614995B (zh) 2011-05-20 2018-02-11 半導體能源研究所股份有限公司 鎖相迴路及使用此鎖相迴路之半導體裝置
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