JP5025781B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5025781B2 JP5025781B2 JP2010241878A JP2010241878A JP5025781B2 JP 5025781 B2 JP5025781 B2 JP 5025781B2 JP 2010241878 A JP2010241878 A JP 2010241878A JP 2010241878 A JP2010241878 A JP 2010241878A JP 5025781 B2 JP5025781 B2 JP 5025781B2
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- Prior art keywords
- insulating film
- film
- region
- gate
- conductive film
- Prior art date
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- Expired - Lifetime
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- 239000004065 semiconductor Substances 0.000 title claims description 77
- 239000004973 liquid crystal related substance Substances 0.000 claims description 52
- 230000015572 biosynthetic process Effects 0.000 claims description 41
- 229910010272 inorganic material Inorganic materials 0.000 claims description 12
- 239000011147 inorganic material Substances 0.000 claims description 12
- 239000011368 organic material Substances 0.000 claims 3
- 239000010408 film Substances 0.000 description 481
- 239000011229 interlayer Substances 0.000 description 133
- 239000010410 layer Substances 0.000 description 111
- 239000012535 impurity Substances 0.000 description 86
- 238000000034 method Methods 0.000 description 58
- 239000000758 substrate Substances 0.000 description 53
- 239000013078 crystal Substances 0.000 description 49
- 238000005530 etching Methods 0.000 description 42
- 239000011159 matrix material Substances 0.000 description 34
- 239000000463 material Substances 0.000 description 31
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 25
- 229910052698 phosphorus Inorganic materials 0.000 description 25
- 239000011574 phosphorus Substances 0.000 description 25
- 239000003990 capacitor Substances 0.000 description 24
- 238000004519 manufacturing process Methods 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 23
- 125000004429 atom Chemical group 0.000 description 23
- 229910052710 silicon Inorganic materials 0.000 description 23
- 239000010703 silicon Substances 0.000 description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 20
- 229910052581 Si3N4 Inorganic materials 0.000 description 20
- 229910021419 crystalline silicon Inorganic materials 0.000 description 20
- 238000010438 heat treatment Methods 0.000 description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 20
- 230000003071 parasitic effect Effects 0.000 description 19
- 239000012298 atmosphere Substances 0.000 description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 16
- 230000008569 process Effects 0.000 description 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 229910052796 boron Inorganic materials 0.000 description 15
- 238000002425 crystallisation Methods 0.000 description 15
- 230000008025 crystallization Effects 0.000 description 15
- 238000007254 oxidation reaction Methods 0.000 description 15
- 230000003647 oxidation Effects 0.000 description 14
- 238000003860 storage Methods 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 230000006870 function Effects 0.000 description 11
- 229910052739 hydrogen Inorganic materials 0.000 description 11
- 239000001257 hydrogen Substances 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 10
- 239000010936 titanium Substances 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 238000000137 annealing Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 8
- 229910003437 indium oxide Inorganic materials 0.000 description 8
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 8
- 229910052759 nickel Inorganic materials 0.000 description 8
- 238000000059 patterning Methods 0.000 description 8
- 238000001994 activation Methods 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- 230000003197 catalytic effect Effects 0.000 description 6
- 238000005247 gettering Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 238000002161 passivation Methods 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000945 filler Substances 0.000 description 5
- 238000005984 hydrogenation reaction Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 238000005070 sampling Methods 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 5
- 229910001887 tin oxide Inorganic materials 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 230000004913 activation Effects 0.000 description 4
- 239000010407 anodic oxide Substances 0.000 description 4
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 4
- 239000002585 base Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000001747 exhibiting effect Effects 0.000 description 4
- 238000007667 floating Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000004627 transmission electron microscopy Methods 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005224 laser annealing Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 229920002620 polyvinyl fluoride Polymers 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- -1 tungsten nitride Chemical class 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910020286 SiOxNy Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000011152 fibreglass Substances 0.000 description 2
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000002294 plasma sputter deposition Methods 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 229920000915 polyvinyl chloride Polymers 0.000 description 2
- 239000004800 polyvinyl chloride Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000009751 slip forming Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- IUOOGQJPAJDLFV-UHFFFAOYSA-N 2,3-dihydroxybutanedioic acid;ethane-1,2-diol Chemical compound OCCO.OC(=O)C(O)C(O)C(O)=O IUOOGQJPAJDLFV-UHFFFAOYSA-N 0.000 description 1
- YLYPIBBGWLKELC-RMKNXTFCSA-N 2-[2-[(e)-2-[4-(dimethylamino)phenyl]ethenyl]-6-methylpyran-4-ylidene]propanedinitrile Chemical compound C1=CC(N(C)C)=CC=C1\C=C\C1=CC(=C(C#N)C#N)C=C(C)O1 YLYPIBBGWLKELC-RMKNXTFCSA-N 0.000 description 1
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000004435 EPR spectroscopy Methods 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004990 Smectic liquid crystal Substances 0.000 description 1
- 241000862969 Stella Species 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- NGPGDYLVALNKEG-UHFFFAOYSA-N azanium;azane;2,3,4-trihydroxy-4-oxobutanoate Chemical compound [NH4+].[NH4+].[O-]C(=O)C(O)C(O)C([O-])=O NGPGDYLVALNKEG-UHFFFAOYSA-N 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000004815 dispersion polymer Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007850 fluorescent dye Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000003550 marker Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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Description
中のA−A’断面が図2(E)に相当する。また、図7(A)中のB−B’断面が図2(E)に相当する。図2(E)でのゲート配線128a、128b、128cは断面では三つに見えるが実際は連続的に繋がった一つのパターンから形成されている。
と定義する。(図3(A))
)
に含まれるボロンの5〜10倍の濃度でリンが添加されるので、この場合もボロンはn型不純物領域(b)の機能には影響を与えないと考えて良い。
なお、オフセット領域とは、チャネル形成領域に接して形成され、チャネル形成領域と同一組成の半導体膜でなるが、ゲート電圧が印加されないため反転層(チャネル領域)を形成しない高抵抗な領域を指す。オフ電流値を下げるためにはLDD領域とゲート配線の重なりを極力抑えることが重要であり、そういう意味でオフセット領域を設けることは有効と言える。
を選択し、膜厚を500nmとした。
第1層間絶縁膜と第2層間絶縁膜との選択比は、1.5以上、好ましくは3〜5有していればよい。(図4(B))
によってスピン密度の差となって現れる。現状では本実施例の結晶質シリコン膜のスピン密度は少なくとも 5×1017spins/cm3以下(好ましくは 3×1017spins/cm3以下)であることが判明している。ただし、この測定値は現存する測定装置の検出限界に近いので、実際のスピン密度はさらに低いと予想される。
を共通ソース配線1512に引き抜くための領域であり消去領域とも言える。なお、図15ではチャネル形成領域1507との間にLDD領域1506を設けているが、形成しなくても良い。また、ドレイン領域1508は電気的に孤立した浮遊ゲート電極1509にキャリアを注入するための領域であり書き込み領域とも言える。さらに、ドレイン領域1508はメモリトランジスタに記憶されたデータをビット配線1511に読み出すための読み出し領域としても機能する。
具体的には、逆スタガ型TFTに用いた場合を図17に示す。本発明の逆スタガ型TFTの場合、実施例1のトップゲート型TFTとはゲート配線と活性層の位置関係が異なる以外、特に大きく異なることはない。従って、本実施例では、図5に示した構造と大きく異なる点に注目して説明を行い、その他の部分は図5と同一であるため説明を省略する。実施例1と同様にして、寄生容量を低減するための第2層間絶縁膜46、47が形成されている。この第2層間絶縁膜は実施例1に示した方法で形成する。
pチャネル型TFT11の活性層には、ソース領域20、ドレイン領域21、チャネル形成領域22が形成される。
即ち、ドライバー回路と画素マトリクス回路を同じ電源電圧で動作させることが可能となり、液晶表示装置全体の低消費電力化を図ることができる。
が設けられる。
これらの有機EL材料や無機材料は公知の材料を用いることができる。
、(B)に示す。なお、本実施例において、4701はスイッチング用TFT4702のソース配線、4703はスイッチング用TFT4702のゲート配線、4704は電流制御用TFT、4705はコンデンサ(省略することも可能)、4706は電流供給線、、4707は電源制御用TFT、4708は電源制御用ゲート配線、4709はEL素子とする。電源制御用TFT4707の動作については特願平11−341272号を参照すると良い。
、(B)に示す。なお、本実施例において、4801はスイッチング用TFT4802のソース配線、4803はスイッチング用TFT4802のゲート配線、4804は電流制御用TFT、4805はコンデンサ(省略することも可能)、4806は電流供給線、、4807は消去用TFT、4808は消去用ゲート配線、4809はEL素子とする。消去用TFT4807の動作については特願平11−338786号を参照すると良い。
Claims (12)
- トランジスタ上の第1の絶縁膜と、
前記第1の絶縁膜上の第2の絶縁膜と、
前記第2の絶縁膜上の導電膜と、を有し、
前記トランジスタは、半導体層、ゲート絶縁膜、及びゲート電極を有し、
前記半導体層は、ソース領域、ドレイン領域、及びチャネル形成領域を有し、
前記ゲート電極は、前記ゲート絶縁膜を介して、前記チャネル形成領域と重なる領域を有し、
前記第1の絶縁膜は、無機材料を有し、
前記第2の絶縁膜は、無機材料を有し、
前記ソース領域又は前記ドレイン領域は、前記第1の絶縁膜と重なり且つ前記第2の絶縁膜と重ならない領域を有し、
前記導電膜は、前記第2の絶縁膜の側面に接する領域と、前記第1の絶縁膜の上面に接する領域と、を有し、
前記導電膜は、前記第1の絶縁膜に設けられた開口を介して前記ソース領域又は前記ドレイン領域に電気的に接続されており、
前記導電膜は、前記ゲート電極の一部又は全部と重なる領域を有することを特徴とする半導体装置。 - トランジスタ上の第1の絶縁膜と、
前記第1の絶縁膜上の第2の絶縁膜と、
前記第2の絶縁膜上の導電膜と、
前記導電膜上の第3の絶縁膜と、を有し、
前記トランジスタは、半導体層、ゲート絶縁膜、及びゲート電極を有し、
前記半導体層は、ソース領域、ドレイン領域、及びチャネル形成領域を有し、
前記ゲート電極は、前記ゲート絶縁膜を介して、前記チャネル形成領域と重なる領域を有し、
前記第1の絶縁膜は、無機材料を有し、
前記第2の絶縁膜は、無機材料を有し、
前記第3の絶縁膜は、有機材料を有し、
前記ソース領域又は前記ドレイン領域は、前記第1の絶縁膜と重なり且つ前記第2の絶縁膜と重ならない領域を有し、
前記導電膜は、前記第2の絶縁膜の側面に接する領域と、前記第1の絶縁膜の上面に接する領域と、を有し、
前記導電膜は、前記第1の絶縁膜に設けられた開口を介して前記ソース領域又は前記ドレイン領域に電気的に接続されており、
前記導電膜は、前記ゲート電極の一部又は全部と重なる領域を有することを特徴とする半導体装置。 - トランジスタ上の第1の絶縁膜と、
前記第1の絶縁膜上の第2の絶縁膜と、
前記第2の絶縁膜上の第1の導電膜と、
前記第1の導電膜上の第3の絶縁膜と、
前記第3の絶縁膜上の第2の導電膜と、を有し、
前記トランジスタは、半導体層、ゲート絶縁膜、及びゲート電極を有し、
前記半導体層は、ソース領域、ドレイン領域、及びチャネル形成領域を有し、
前記ゲート電極は、前記ゲート絶縁膜を介して、前記チャネル形成領域と重なる領域を有し、
前記第1の絶縁膜は、無機材料を有し、
前記第2の絶縁膜は、無機材料を有し、
前記第3の絶縁膜は、有機材料を有し、
前記ソース領域又は前記ドレイン領域は、前記第1の絶縁膜と重なり且つ前記第2の絶縁膜と重ならない領域を有し、
前記第1の導電膜は、前記第1の絶縁膜に設けられた開口を介して前記ソース領域又は前記ドレイン領域に電気的に接続されており、
前記第1の導電膜は、前記ゲート電極の一部又は全部と重なる領域を有し、
前記第2の導電膜は、前記第3の絶縁膜に設けられた開口を介して前記第1の導電膜に電気的に接続されていることを特徴とする半導体装置。 - トランジスタ上の第1の絶縁膜と、
前記第1の絶縁膜上の第2の絶縁膜と、
前記第2の絶縁膜上の第1の導電膜と、
前記第1の導電膜上の第3の絶縁膜と、
前記第3の絶縁膜上の第2の導電膜と、を有し、
前記トランジスタは、半導体層、ゲート絶縁膜、及びゲート電極を有し、
前記半導体層は、ソース領域、ドレイン領域、及びチャネル形成領域を有し、
前記ゲート電極は、前記ゲート絶縁膜を介して、前記チャネル形成領域と重なる領域を有し、
前記第1の絶縁膜は、無機材料を有し、
前記第2の絶縁膜は、無機材料を有し、
前記第3の絶縁膜は、有機材料を有し、
前記ソース領域又は前記ドレイン領域は、前記第1の絶縁膜と重なり且つ前記第2の絶縁膜と重ならない領域を有し、
前記第1の導電膜は、前記第2の絶縁膜の側面に接する領域と、前記第1の絶縁膜の上面に接する領域と、を有し、
前記第1の導電膜は、前記第1の絶縁膜に設けられた開口を介して前記ソース領域又は前記ドレイン領域に電気的に接続されており、
前記第1の導電膜は、前記ゲート電極の一部又は全部と重なる領域を有し、
前記第2の導電膜は、前記第3の絶縁膜に設けられた開口を介して前記第1の導電膜に電気的に接続されていることを特徴とする半導体装置。 - 請求項3又は請求項4において、
前記第3の絶縁膜と前記第2の導電膜との間に第4の絶縁膜を有し、
前記第2の導電膜は、前記第4の絶縁膜に接しており、
前記第4の絶縁膜は、無機材料を有することを特徴とする半導体装置。 - 請求項3又は請求項4において、
前記第3の絶縁膜と前記第2の導電膜との間に第3の導電膜を有し、
前記第3の導電膜と前記第2の導電膜との間に第4の絶縁膜を有し、
前記第2の導電膜は、画像信号に応じた電位が供給され、
前記第3の導電膜は、コモン電位が供給され、
前記第4の絶縁膜は、無機材料を有することを特徴とする半導体装置。 - 請求項1乃至請求項6のいずれか一において、
前記第1の絶縁膜は、複数の絶縁膜が積層された構造を有することを特徴とする半導体装置。 - 請求項1乃至請求項7のいずれか一において、
前記第2の絶縁膜は、端部にテーパー形状を有していることを特徴とする半導体装置。 - 請求項1乃至請求項8のいずれか一において、
前記トランジスタは、ボトムゲート型の構造を有することを特徴とする半導体装置。 - 請求項1乃至請求項8のいずれか一において、
前記トランジスタは、トップゲート型の構造を有することを特徴とする半導体装置。 - 請求項1乃至請求項10のいずれか一に記載の前記半導体装置と、液晶と、駆動回路とを有することを特徴とする液晶表示装置。
- 請求項11に記載の前記液晶表示装置と、操作スイッチ、画像入力部、音声入力部、カメラ部、スピーカー部、又は記録媒体とを有することを特徴とする電子機器。
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Also Published As
Publication number | Publication date |
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JP6008999B2 (ja) | 2016-10-19 |
US7601572B2 (en) | 2009-10-13 |
EP2500941A2 (en) | 2012-09-19 |
JP2017098585A (ja) | 2017-06-01 |
US7001801B2 (en) | 2006-02-21 |
JP5719912B2 (ja) | 2015-05-20 |
JP2017146609A (ja) | 2017-08-24 |
JP2016057646A (ja) | 2016-04-21 |
EP2500941A3 (en) | 2017-05-10 |
JP2011119743A (ja) | 2011-06-16 |
JP5668126B2 (ja) | 2015-02-12 |
JP2015109465A (ja) | 2015-06-11 |
JP2018207113A (ja) | 2018-12-27 |
JP5552553B2 (ja) | 2014-07-16 |
JP2011066432A (ja) | 2011-03-31 |
US6583471B1 (en) | 2003-06-24 |
JP6170641B1 (ja) | 2017-07-26 |
JP6262709B2 (ja) | 2018-01-17 |
JP2013211573A (ja) | 2013-10-10 |
JP5548602B2 (ja) | 2014-07-16 |
JP2014081643A (ja) | 2014-05-08 |
US20060086982A1 (en) | 2006-04-27 |
JP2014053640A (ja) | 2014-03-20 |
EP1058310A3 (en) | 2009-11-18 |
EP1058310A2 (en) | 2000-12-06 |
US20030201496A1 (en) | 2003-10-30 |
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