JP2021508946A5 - - Google Patents

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JP2021508946A5
JP2021508946A5 JP2020535594A JP2020535594A JP2021508946A5 JP 2021508946 A5 JP2021508946 A5 JP 2021508946A5 JP 2020535594 A JP2020535594 A JP 2020535594A JP 2020535594 A JP2020535594 A JP 2020535594A JP 2021508946 A5 JP2021508946 A5 JP 2021508946A5
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JP2020535594A 2017-12-28 2018-12-21 超微細ピッチを有する3次元nor型メモリアレイ:デバイスと方法 Active JP7072658B2 (ja)

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US201762611205P 2017-12-28 2017-12-28
US62/611,205 2017-12-28
US201862752092P 2018-10-29 2018-10-29
US62/752,092 2018-10-29
PCT/US2018/067338 WO2019133534A1 (en) 2017-12-28 2018-12-21 3-dimensional nor memory array with very fine pitch: device and method

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JP2021508946A5 true JP2021508946A5 (https=) 2021-11-25
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Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12537057B2 (en) 2015-09-30 2026-01-27 Sunrise Memory Corporation Three-dimensional vertical nor flash thin film transistor strings
US9842651B2 (en) 2015-11-25 2017-12-12 Sunrise Memory Corporation Three-dimensional vertical NOR flash thin film transistor strings
US11120884B2 (en) 2015-09-30 2021-09-14 Sunrise Memory Corporation Implementing logic function and generating analog signals using NOR memory strings
US9892800B2 (en) 2015-09-30 2018-02-13 Sunrise Memory Corporation Multi-gate NOR flash thin-film transistor strings arranged in stacked horizontal active strips with vertical control gates
US10121553B2 (en) 2015-09-30 2018-11-06 Sunrise Memory Corporation Capacitive-coupled non-volatile thin-film transistor NOR strings in three-dimensional arrays
US10608008B2 (en) 2017-06-20 2020-03-31 Sunrise Memory Corporation 3-dimensional nor strings with segmented shared source regions
US10692874B2 (en) 2017-06-20 2020-06-23 Sunrise Memory Corporation 3-dimensional NOR string arrays in segmented stacks
US10608011B2 (en) * 2017-06-20 2020-03-31 Sunrise Memory Corporation 3-dimensional NOR memory array architecture and methods for fabrication thereof
US10896916B2 (en) 2017-11-17 2021-01-19 Sunrise Memory Corporation Reverse memory cell
WO2019133534A1 (en) * 2017-12-28 2019-07-04 Sunrise Memory Corporation 3-dimensional nor memory array with very fine pitch: device and method
US10475812B2 (en) 2018-02-02 2019-11-12 Sunrise Memory Corporation Three-dimensional vertical NOR flash thin-film transistor strings
US11751391B2 (en) 2018-07-12 2023-09-05 Sunrise Memory Corporation Methods for fabricating a 3-dimensional memory structure of nor memory strings
WO2020014655A1 (en) 2018-07-12 2020-01-16 Sunrise Memory Corporation Fabrication method for a 3-dimensional nor memory array
TWI713195B (zh) 2018-09-24 2020-12-11 美商森恩萊斯記憶體公司 三維nor記憶電路製程中之晶圓接合及其形成之積體電路
US11282855B2 (en) 2018-12-07 2022-03-22 Sunrise Memory Corporation Methods for forming multi-layer vertical NOR-type memory string arrays
JP7425069B2 (ja) 2019-01-30 2024-01-30 サンライズ メモリー コーポレイション 基板接合を用いた高帯域幅・大容量メモリ組み込み型電子デバイス
JP7655853B2 (ja) 2019-02-11 2025-04-02 サンライズ メモリー コーポレイション 垂直型薄膜トランジスタ、及び、垂直型薄膜トランジスタの、3次元メモリアレイのためのビット線コネクタとしての応用メモリ回路方法
TWI743784B (zh) * 2019-05-17 2021-10-21 美商森恩萊斯記憶體公司 形成三維水平nor記憶陣列之製程
CN114026676B (zh) * 2019-07-09 2023-05-26 日升存储公司 水平反或型存储器串的三维阵列制程
US11917821B2 (en) 2019-07-09 2024-02-27 Sunrise Memory Corporation Process for a 3-dimensional array of horizontal nor-type memory strings
US11515309B2 (en) 2019-12-19 2022-11-29 Sunrise Memory Corporation Process for preparing a channel region of a thin-film transistor in a 3-dimensional thin-film transistor array
KR102670304B1 (ko) * 2020-01-17 2024-05-30 양쯔 메모리 테크놀로지스 씨오., 엘티디. 이중 데크 3차원 nand 메모리 및 그 형성 방법
TWI767512B (zh) 2020-01-22 2022-06-11 美商森恩萊斯記憶體公司 薄膜儲存電晶體中冷電子抹除
US12550382B2 (en) 2020-01-22 2026-02-10 Sunrise Memory Corporation Thin-film storage transistor with ferroelectric storage layer
TWI783369B (zh) * 2020-02-07 2022-11-11 美商森恩萊斯記憶體公司 準揮發性系統級記憶體
WO2021159028A1 (en) 2020-02-07 2021-08-12 Sunrise Memory Corporation High capacity memory circuit with low effective latency
US11507301B2 (en) 2020-02-24 2022-11-22 Sunrise Memory Corporation Memory module implementing memory centric architecture
US11561911B2 (en) 2020-02-24 2023-01-24 Sunrise Memory Corporation Channel controller for shared memory access
WO2021173209A1 (en) 2020-02-24 2021-09-02 Sunrise Memory Corporation High capacity memory module including wafer-section memory circuit
KR102921047B1 (ko) * 2020-03-04 2026-01-30 램 리써치 코포레이션 3-단자 수직 메모리 구조체의 채널 층 보호
US11705496B2 (en) 2020-04-08 2023-07-18 Sunrise Memory Corporation Charge-trapping layer with optimized number of charge-trapping sites for fast program and erase of a memory cell in a 3-dimensional NOR memory string array
TWI908835B (zh) * 2020-07-21 2025-12-21 美商日升存儲公司 用於製造nor記憶體串之3維記憶體結構之方法
TW202220191A (zh) * 2020-07-21 2022-05-16 美商日升存儲公司 用於製造nor記憶體串之3維記憶體結構之方法
US11937424B2 (en) 2020-08-31 2024-03-19 Sunrise Memory Corporation Thin-film storage transistors in a 3-dimensional array of nor memory strings and process for fabricating the same
US11842777B2 (en) 2020-11-17 2023-12-12 Sunrise Memory Corporation Methods for reducing disturb errors by refreshing data alongside programming or erase operations
US11848056B2 (en) 2020-12-08 2023-12-19 Sunrise Memory Corporation Quasi-volatile memory with enhanced sense amplifier operation
WO2022140084A1 (en) 2020-12-21 2022-06-30 Sunrise Memory Corporation Bit line and source line connections for a 3-dimensional array of memory circuits
CN116547796A (zh) 2021-01-20 2023-08-04 日升存储公司 垂直nor闪存薄膜晶体管串及其制造
CN114284285B (zh) * 2021-06-02 2024-04-16 青岛昇瑞光电科技有限公司 一种nor型半导体存储器件及其制造方法
WO2023287908A1 (en) 2021-07-16 2023-01-19 Sunrise Memory Corporation 3-dimensional memory string array of thin-film ferroelectric transistors
US20230078883A1 (en) * 2021-09-14 2023-03-16 Sunrise Memory Corporation Three-dimensional memory string array of thin-film ferroelectric transistors formed with an oxide semiconductor channel in a channel last process
US12402319B2 (en) 2021-09-14 2025-08-26 Sunrise Memory Corporation Three-dimensional memory string array of thin-film ferroelectric transistors formed with an oxide semiconductor channel
CN117693190A (zh) * 2022-08-29 2024-03-12 长鑫存储技术有限公司 半导体结构的制作方法及其结构
US20250024685A1 (en) * 2023-07-10 2025-01-16 Sunrise Memory Corporation Memory structure of three-dimensional nor memory strings of channel-all-around ferroelectric memory transistors and method of fabrication

Family Cites Families (138)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5583808A (en) 1994-09-16 1996-12-10 National Semiconductor Corporation EPROM array segmented for high performance and method for controlling same
US5646886A (en) 1995-05-24 1997-07-08 National Semiconductor Corporation Flash memory having segmented array for improved operation
JPH098290A (ja) 1995-06-20 1997-01-10 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5789776A (en) 1995-09-22 1998-08-04 Nvx Corporation Single poly memory cell and array
US5768192A (en) 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
US5915167A (en) 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
KR100242723B1 (ko) 1997-08-12 2000-02-01 윤종용 불휘발성 반도체 메모리 장치의 셀 어레이 구조 및 그 제조방법
US6350704B1 (en) 1997-10-14 2002-02-26 Micron Technology Inc. Porous silicon oxycarbide integrated circuit insulator
US6040605A (en) 1998-01-28 2000-03-21 Hitachi, Ltd. Semiconductor memory device
US6107133A (en) 1998-05-28 2000-08-22 International Business Machines Corporation Method for making a five square vertical DRAM cell
JP2000200842A (ja) 1998-11-04 2000-07-18 Sony Corp 不揮発性半導体記憶装置、製造方法および書き込み方法
US6118171A (en) 1998-12-21 2000-09-12 Motorola, Inc. Semiconductor device having a pedestal structure and method of making
JP4899241B2 (ja) 1999-12-06 2012-03-21 ソニー株式会社 不揮発性半導体記憶装置およびその動作方法
US6362508B1 (en) 2000-04-03 2002-03-26 Tower Semiconductor Ltd. Triple layer pre-metal dielectric structure for CMOS memory devices
JP2001357682A (ja) 2000-06-12 2001-12-26 Sony Corp メモリシステムおよびそのプログラム方法
AU2001286432A1 (en) 2000-08-14 2002-02-25 Matrix Semiconductor, Inc. Dense arrays and charge storage devices, and methods for making same
US6580124B1 (en) 2000-08-14 2003-06-17 Matrix Semiconductor Inc. Multigate semiconductor device with vertical channel current and method of fabrication
US6621725B2 (en) 2000-08-17 2003-09-16 Kabushiki Kaisha Toshiba Semiconductor memory device with floating storage bulk region and method of manufacturing the same
US6602781B1 (en) * 2000-12-12 2003-08-05 Advanced Micro Devices, Inc. Metal silicide gate transistors
US20020193484A1 (en) 2001-02-02 2002-12-19 The 54 Group, Ltd. Polymeric resins impregnated with insect repellants
US6531727B2 (en) 2001-02-09 2003-03-11 Micron Technology, Inc. Open bit line DRAM with ultra thin body transistors
US6744094B2 (en) 2001-08-24 2004-06-01 Micron Technology Inc. Floating gate transistor with horizontal gate layers stacked next to vertical body
US6873004B1 (en) 2002-02-04 2005-03-29 Nexflash Technologies, Inc. Virtual ground single transistor memory cell, memory array incorporating same, and method of operation thereof
JP2003243564A (ja) * 2002-02-08 2003-08-29 Samsung Electro Mech Co Ltd プリント回路基板ストリップのメッキのための設計方法及びこれを用いた半導体チップパッケージの製造方法
US7064018B2 (en) 2002-07-08 2006-06-20 Viciciv Technology Methods for fabricating three dimensional integrated circuits
US6774458B2 (en) 2002-07-23 2004-08-10 Hewlett Packard Development Company, L.P. Vertical interconnection structure and methods
US6849905B2 (en) * 2002-12-23 2005-02-01 Matrix Semiconductor, Inc. Semiconductor device with localized charge storage dielectric and method of making same
US7005350B2 (en) 2002-12-31 2006-02-28 Matrix Semiconductor, Inc. Method for fabricating programmable memory array structures incorporating series-connected transistor strings
KR100881201B1 (ko) 2003-01-09 2009-02-05 삼성전자주식회사 사이드 게이트를 구비하는 소노스 메모리 소자 및 그제조방법
US7307308B2 (en) 2003-04-07 2007-12-11 Silicon Storage Technology, Inc. Buried bit line non-volatile floating gate memory cell with independent controllable control gate in a trench, and array thereof, and method of formation
US6754105B1 (en) * 2003-05-06 2004-06-22 Advanced Micro Devices, Inc. Trench side wall charge trapping dielectric flash memory device
JP4108537B2 (ja) 2003-05-28 2008-06-25 富士雄 舛岡 半導体装置
KR100546331B1 (ko) 2003-06-03 2006-01-26 삼성전자주식회사 스택 뱅크들 마다 독립적으로 동작하는 멀티 포트 메모리장치
US6909139B2 (en) * 2003-06-27 2005-06-21 Infineon Technologies Ag One transistor flash memory cell
US20040262772A1 (en) 2003-06-30 2004-12-30 Shriram Ramanathan Methods for bonding wafers using a metal interlayer
JP4545423B2 (ja) 2003-12-09 2010-09-15 ルネサスエレクトロニクス株式会社 半導体装置
US7223653B2 (en) 2004-06-15 2007-05-29 International Business Machines Corporation Process for forming a buried plate
US7378702B2 (en) 2004-06-21 2008-05-27 Sang-Yun Lee Vertical memory device structures
JP4795660B2 (ja) 2004-09-29 2011-10-19 ルネサスエレクトロニクス株式会社 半導体装置
US7366826B2 (en) 2004-12-16 2008-04-29 Sandisk Corporation Non-volatile memory and method with multi-stream update tracking
US8314024B2 (en) 2008-12-19 2012-11-20 Unity Semiconductor Corporation Device fabrication
KR100673105B1 (ko) 2005-03-31 2007-01-22 주식회사 하이닉스반도체 반도체 소자의 수직형 트랜지스터 및 그의 형성 방법
US7612411B2 (en) 2005-08-03 2009-11-03 Walker Andrew J Dual-gate device and method
TW200812074A (en) * 2006-07-04 2008-03-01 Nxp Bv Non-volatile memory and-array
US20080076216A1 (en) * 2006-09-25 2008-03-27 Sangwoo Pae Method to fabricate high-k/metal gate transistors using a double capping layer process
KR100834396B1 (ko) 2006-12-27 2008-06-04 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법
JP2008251138A (ja) 2007-03-30 2008-10-16 Toshiba Corp 不揮発性半導体メモリ、不揮発性半導体メモリの制御方法、不揮発性半導体メモリシステム、及びメモリカード
US7512012B2 (en) * 2007-04-30 2009-03-31 Macronix International Co., Ltd. Non-volatile memory and manufacturing method and operating method thereof and circuit system including the non-volatile memory
JP5130596B2 (ja) 2007-05-30 2013-01-30 国立大学法人東北大学 半導体装置
DE102007035251B3 (de) 2007-07-27 2008-08-28 X-Fab Semiconductor Foundries Ag Verfahren zur Herstellung von Isolationsgräben mit unterschiedlichen Seitenwanddotierungen
US20090157946A1 (en) 2007-12-12 2009-06-18 Siamak Arya Memory having improved read capability
KR20090079694A (ko) * 2008-01-18 2009-07-22 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
US7898857B2 (en) 2008-03-20 2011-03-01 Micron Technology, Inc. Memory structure having volatile and non-volatile memory portions
US8072811B2 (en) 2008-05-07 2011-12-06 Aplus Flash Technology, Inc, NAND based NMOS NOR flash memory cell, a NAND based NMOS NOR flash memory array, and a method of forming a NAND based NMOS NOR flash memory array
JP2009301600A (ja) 2008-06-10 2009-12-24 Panasonic Corp 不揮発性半導体記憶装置および信号処理システム
US8289775B2 (en) 2008-06-20 2012-10-16 Aplus Flash Technology, Inc. Apparatus and method for inhibiting excess leakage current in unselected nonvolatile memory cells in an array
JP2010010349A (ja) 2008-06-26 2010-01-14 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法
JP2010118580A (ja) 2008-11-14 2010-05-27 Toshiba Corp 不揮発性半導体記憶装置
WO2010077414A1 (en) 2008-12-09 2010-07-08 Rambus Inc. Non-volatile memory device for concurrent and pipelined memory operations
KR101527192B1 (ko) * 2008-12-10 2015-06-10 삼성전자주식회사 불휘발성 메모리 소자 및 그의 제조방법
US8178396B2 (en) 2009-03-11 2012-05-15 Micron Technology, Inc. Methods for forming three-dimensional memory devices, and related structures
JP2010251572A (ja) * 2009-04-16 2010-11-04 Toshiba Corp 不揮発性半導体記憶装置
US8139418B2 (en) 2009-04-27 2012-03-20 Micron Technology, Inc. Techniques for controlling a direct injection semiconductor memory device
KR101635504B1 (ko) 2009-06-19 2016-07-04 삼성전자주식회사 3차원 수직 채널 구조를 갖는 불 휘발성 메모리 장치의 프로그램 방법
KR101584113B1 (ko) 2009-09-29 2016-01-13 삼성전자주식회사 3차원 반도체 메모리 장치 및 그 제조 방법
JP5031809B2 (ja) 2009-11-13 2012-09-26 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
US8026521B1 (en) 2010-10-11 2011-09-27 Monolithic 3D Inc. Semiconductor device and structure
KR101660432B1 (ko) 2010-06-07 2016-09-27 삼성전자 주식회사 수직 구조의 반도체 메모리 소자
KR101207273B1 (ko) * 2010-09-03 2012-12-03 에스케이하이닉스 주식회사 임베디드 패키지 및 그 형성방법
US11854857B1 (en) * 2010-11-18 2023-12-26 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US8630114B2 (en) 2011-01-19 2014-01-14 Macronix International Co., Ltd. Memory architecture of 3D NOR array
KR20120085591A (ko) 2011-01-24 2012-08-01 김진선 3차원 비휘발성 메모리 소자, 그 동작 방법 및 그 제조 방법
US8952418B2 (en) 2011-03-01 2015-02-10 Micron Technology, Inc. Gated bipolar junction transistors
JP2012204684A (ja) 2011-03-25 2012-10-22 Toshiba Corp 不揮発性半導体記憶装置
US9559216B2 (en) 2011-06-06 2017-01-31 Micron Technology, Inc. Semiconductor memory device and method for biasing same
JP5985293B2 (ja) * 2011-10-04 2016-09-06 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
KR20130088348A (ko) * 2012-01-31 2013-08-08 에스케이하이닉스 주식회사 3차원 비휘발성 메모리 소자
US8878278B2 (en) 2012-03-21 2014-11-04 Sandisk Technologies Inc. Compact three dimensional vertical NAND and method of making thereof
JP2013214552A (ja) 2012-03-30 2013-10-17 Toshiba Corp 半導体装置とその製造方法
US9054183B2 (en) 2012-07-13 2015-06-09 United Silicon Carbide, Inc. Trenched and implanted accumulation mode metal-oxide-semiconductor field-effect transistor
JP2014093319A (ja) 2012-10-31 2014-05-19 Toshiba Corp 半導体装置およびその製造方法
US10403766B2 (en) 2012-12-04 2019-09-03 Conversant Intellectual Property Management Inc. NAND flash memory with vertical cell stack structure and method for manufacturing same
KR101421879B1 (ko) * 2013-01-15 2014-07-28 한양대학교 산학협력단 반도체 메모리 소자 및 그의 제조 방법
US8877586B2 (en) 2013-01-31 2014-11-04 Sandisk 3D Llc Process for forming resistive switching memory cells using nano-particles
US8878271B2 (en) 2013-03-01 2014-11-04 Micron Technology, Inc. Vertical access device and apparatuses having a body connection line, and related method of operating the same
US9202694B2 (en) 2013-03-04 2015-12-01 Sandisk 3D Llc Vertical bit line non-volatile memory systems and methods of fabrication
KR102108879B1 (ko) * 2013-03-14 2020-05-11 삼성전자주식회사 수직형 메모리 장치 및 그 제조 방법
US9368625B2 (en) 2013-05-01 2016-06-14 Zeno Semiconductor, Inc. NAND string utilizing floating body memory cell
US9281044B2 (en) 2013-05-17 2016-03-08 Micron Technology, Inc. Apparatuses having a ferroelectric field-effect transistor memory array and related method
US9666663B2 (en) * 2013-08-09 2017-05-30 Infineon Technologies Ag Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device
US9337210B2 (en) 2013-08-12 2016-05-10 Micron Technology, Inc. Vertical ferroelectric field effect transistor constructions, constructions comprising a pair of vertical ferroelectric field effect transistors, vertical strings of ferroelectric field effect transistors, and vertical strings of laterally opposing pairs of vertical ferroelectric field effect transistors
US9190293B2 (en) 2013-12-18 2015-11-17 Applied Materials, Inc. Even tungsten etch for high aspect ratio trenches
KR102066743B1 (ko) 2014-01-09 2020-01-15 삼성전자주식회사 비휘발성 메모리 장치 및 그 형성방법
US9368601B2 (en) 2014-02-28 2016-06-14 Sandisk Technologies Inc. Method for forming oxide below control gate in vertical channel thin film transistor
US10014317B2 (en) 2014-09-23 2018-07-03 Haibing Peng Three-dimensional non-volatile NOR-type flash memory
US9230985B1 (en) 2014-10-15 2016-01-05 Sandisk 3D Llc Vertical TFT with tunnel barrier
US9698152B2 (en) 2014-11-13 2017-07-04 Sandisk Technologies Llc Three-dimensional memory structure with multi-component contact via structure and method of making thereof
US9496419B2 (en) * 2014-11-25 2016-11-15 Sandisk Technologies Llc Ruthenium nucleation layer for control gate electrodes in a memory structure
US9595566B2 (en) 2015-02-25 2017-03-14 Sandisk Technologies Llc Floating staircase word lines and process in a 3D non-volatile memory having vertical bit lines
KR20160122020A (ko) * 2015-04-13 2016-10-21 에스케이하이닉스 주식회사 기판 및 이를 구비하는 반도체 패키지
US10007573B2 (en) 2015-04-27 2018-06-26 Invensas Corporation Preferred state encoding in non-volatile memories
CN106206447A (zh) 2015-05-05 2016-12-07 中芯国际集成电路制造(上海)有限公司 3d nand器件的形成方法
KR20160141278A (ko) * 2015-05-29 2016-12-08 에스케이하이닉스 주식회사 반도체 패키지 및 그 제조방법
US10254968B1 (en) 2015-06-10 2019-04-09 Firquest Llc Hybrid memory device for lookup operations
KR102408657B1 (ko) * 2015-07-23 2022-06-15 삼성전자주식회사 반도체 장치 및 그 제조 방법
US11956952B2 (en) 2015-08-23 2024-04-09 Monolithic 3D Inc. Semiconductor memory device and structure
DE112016004265T5 (de) 2015-09-21 2018-06-07 Monolithic 3D Inc. 3d halbleitervorrichtung und -struktur
US9412752B1 (en) 2015-09-22 2016-08-09 Macronix International Co., Ltd. Reference line and bit line structure for 3D memory
US10121553B2 (en) * 2015-09-30 2018-11-06 Sunrise Memory Corporation Capacitive-coupled non-volatile thin-film transistor NOR strings in three-dimensional arrays
US9842651B2 (en) * 2015-11-25 2017-12-12 Sunrise Memory Corporation Three-dimensional vertical NOR flash thin film transistor strings
US9892800B2 (en) 2015-09-30 2018-02-13 Sunrise Memory Corporation Multi-gate NOR flash thin-film transistor strings arranged in stacked horizontal active strips with vertical control gates
US9831266B2 (en) 2015-11-20 2017-11-28 Sandisk Technologies Llc Three-dimensional NAND device containing support pedestal structures for a buried source line and method of making the same
US9502110B1 (en) * 2015-12-09 2016-11-22 Stmicroelectronics (Rousset) Sas Modular cell for a memory array, the modular cell including a memory circuit and a read circuit
US9985046B2 (en) 2016-06-13 2018-05-29 Sandisk Technologies Llc Method of forming a staircase in a semiconductor device using a linear alignment control feature
US10417098B2 (en) 2016-06-28 2019-09-17 International Business Machines Corporation File level access to block level incremental backups of a virtual disk
US10157780B2 (en) 2016-11-29 2018-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a device having a doping layer and device formed
JP2018152419A (ja) 2017-03-10 2018-09-27 東芝メモリ株式会社 半導体記憶装置
US10319635B2 (en) 2017-05-25 2019-06-11 Sandisk Technologies Llc Interconnect structure containing a metal slilicide hydrogen diffusion barrier and method of making thereof
US10692874B2 (en) 2017-06-20 2020-06-23 Sunrise Memory Corporation 3-dimensional NOR string arrays in segmented stacks
US10608011B2 (en) 2017-06-20 2020-03-31 Sunrise Memory Corporation 3-dimensional NOR memory array architecture and methods for fabrication thereof
US10608008B2 (en) * 2017-06-20 2020-03-31 Sunrise Memory Corporation 3-dimensional nor strings with segmented shared source regions
US10460817B2 (en) 2017-07-13 2019-10-29 Qualcomm Incorporated Multiple (multi-) level cell (MLC) non-volatile (NV) memory (NVM) matrix circuits for performing matrix computations with multi-bit input vectors
US10431596B2 (en) 2017-08-28 2019-10-01 Sunrise Memory Corporation Staggered word line architecture for reduced disturb in 3-dimensional NOR memory arrays
WO2019045905A1 (en) 2017-08-31 2019-03-07 Micron Technology, Inc. APPARATUS HAVING MEMORY CELLS HAVING TWO TRANSISTORS AND CAPACITOR, AND BODY REGIONS OF TRANSISTORS COUPLED AT REFERENCE VOLTAGES
US10896916B2 (en) 2017-11-17 2021-01-19 Sunrise Memory Corporation Reverse memory cell
WO2019133534A1 (en) * 2017-12-28 2019-07-04 Sunrise Memory Corporation 3-dimensional nor memory array with very fine pitch: device and method
CN110112117A (zh) * 2018-02-01 2019-08-09 爱思开海力士有限公司 半导体封装
CN110112116B (zh) * 2018-02-01 2023-06-06 爱思开海力士有限公司 半导体封装件和形成半导体封装件的方法
US10381378B1 (en) 2018-02-02 2019-08-13 Sunrise Memory Corporation Three-dimensional vertical NOR flash thin-film transistor strings
US10475812B2 (en) 2018-02-02 2019-11-12 Sunrise Memory Corporation Three-dimensional vertical NOR flash thin-film transistor strings
US10748931B2 (en) 2018-05-08 2020-08-18 Micron Technology, Inc. Integrated assemblies having ferroelectric transistors with body regions coupled to carrier reservoirs
WO2020014655A1 (en) 2018-07-12 2020-01-16 Sunrise Memory Corporation Fabrication method for a 3-dimensional nor memory array
US11069696B2 (en) 2018-07-12 2021-07-20 Sunrise Memory Corporation Device structure for a 3-dimensional NOR memory array and methods for improved erase operations applied thereto
TWI757635B (zh) 2018-09-20 2022-03-11 美商森恩萊斯記憶體公司 記憶體結構及其用於電性連接三維記憶裝置之多水平導電層之階梯結構的製作方法
TWI713195B (zh) 2018-09-24 2020-12-11 美商森恩萊斯記憶體公司 三維nor記憶電路製程中之晶圓接合及其形成之積體電路
WO2020117978A1 (en) 2018-12-04 2020-06-11 Sunrise Memory Corporation Methods for forming multilayer horizontal nor-type thin-film memory strings
JP7655853B2 (ja) 2019-02-11 2025-04-02 サンライズ メモリー コーポレイション 垂直型薄膜トランジスタ、及び、垂直型薄膜トランジスタの、3次元メモリアレイのためのビット線コネクタとしての応用メモリ回路方法
KR102887872B1 (ko) * 2021-01-29 2025-11-18 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법

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