JP2020080436A - シリコン及びシリコンゲルマニウムのナノワイヤ構造 - Google Patents
シリコン及びシリコンゲルマニウムのナノワイヤ構造 Download PDFInfo
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- JP2020080436A JP2020080436A JP2020036845A JP2020036845A JP2020080436A JP 2020080436 A JP2020080436 A JP 2020080436A JP 2020036845 A JP2020036845 A JP 2020036845A JP 2020036845 A JP2020036845 A JP 2020036845A JP 2020080436 A JP2020080436 A JP 2020080436A
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- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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Abstract
Description
Claims (12)
- 半導体基板と、
前記半導体基板の上の、上下に位置を揃えられたNナノワイヤチャネル及びPナノワイヤチャネルであり、各々が、水平に横方向に対向するソース及びドレイン領域を有する、Nナノワイヤチャネル及びPナノワイヤチャネルと、
前記N及びPナノワイヤチャネルと結合する高背コンタクトと、
前記N及びPナノワイヤチャネルの一方に結合された低背コンタクトと、
前記N及びPナノワイヤチャネルの一方に結合された前記低背コンタクトよりも下の底部コンタクトであり、前記半導体基板に電気的に結合された底部コンタクトと、
有する集積回路構造体。 - 前記半導体基板は、Vssに結合されるN+ドープト領域を有し、前記底部コンタクトは、前記半導体基板の該N+ドープト領域に電気的に結合されている、請求項1に記載の集積回路構造体。
- 前記低背コンタクト及び前記底部コンタクトが互いに位置をずらされている、請求項1に記載の集積回路構造体。
- 前記N及びPナノワイヤは、左右のウィング型構造を有する、請求項1に記載の集積回路構造体。
- 前記Nナノワイヤが前記Pナノワイヤよりも上にある、請求項1に記載の集積回路構造体。
- 前記Pナノワイヤが前記Nナノワイヤよりも上にある、請求項1に記載の集積回路構造体。
- 集積回路構造体を製造する方法であって、
半導体基板の上に、上下に位置を揃えられたNナノワイヤチャネル及びPナノワイヤチャネルを形成し、該N及びPナノワイヤチャネルは各々、水平に横方向に対向するソース及びドレイン領域を有し、
前記N及びPナノワイヤチャネルと結合する高背コンタクトを形成し、
前記N及びPナノワイヤチャネルの一方に結合された低背コンタクトを形成し、且つ
前記N及びPナノワイヤチャネルの一方に結合された前記低背コンタクトよりも下の底部コンタクトを形成し、底部コンタクトは前記半導体基板に電気的に結合される、
ことを有する方法。 - 前記半導体基板は、Vssに結合されるN+ドープト領域を有し、前記底部コンタクトは、前記半導体基板の該N+ドープト領域に電気的に結合される、請求項7に記載の方法。
- 前記低背コンタクト及び前記底部コンタクトが互いに位置をずらされる、請求項7に記載の方法。
- 前記N及びPナノワイヤは、左右のウィング型構造を有する、請求項7に記載の方法。
- 前記Nナノワイヤが前記Pナノワイヤよりも上にある、請求項7に記載の方法。
- 前記Pナノワイヤが前記Nナノワイヤよりも上にある、請求項7に記載の方法。
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Families Citing this family (260)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8558279B2 (en) * | 2010-09-23 | 2013-10-15 | Intel Corporation | Non-planar device having uniaxially strained semiconductor body and method of making same |
US8753942B2 (en) * | 2010-12-01 | 2014-06-17 | Intel Corporation | Silicon and silicon germanium nanowire structures |
WO2013095646A1 (en) * | 2011-12-23 | 2013-06-27 | Intel Corporation | Cmos nanowire structure |
WO2013095652A1 (en) | 2011-12-23 | 2013-06-27 | Intel Corporation | Uniaxially strained nanowire structure |
DE112011105995B4 (de) | 2011-12-23 | 2020-08-06 | Intel Corporation | Herstellungsverfahren für eine nicht-planare Rundum-Gate-Schaltung |
US9012284B2 (en) * | 2011-12-23 | 2015-04-21 | Intel Corporation | Nanowire transistor devices and forming techniques |
CN106847805B (zh) * | 2011-12-23 | 2020-08-21 | 英特尔公司 | 具有包含不同材料取向或组成的纳米线或半导体主体的共衬底半导体器件 |
CN104137237B (zh) | 2011-12-23 | 2018-10-09 | 英特尔公司 | 具有非分立的源极区和漏极区的纳米线结构 |
CN104011842B (zh) * | 2011-12-31 | 2016-10-26 | 英特尔公司 | 用于高鳍状物的硬掩模蚀刻停止层 |
FR2989515B1 (fr) * | 2012-04-16 | 2015-01-16 | Commissariat Energie Atomique | Procede ameliore de realisation d'une structure de transistor a nano-fils superposes et a grille enrobante |
US9484447B2 (en) | 2012-06-29 | 2016-11-01 | Intel Corporation | Integration methods to fabricate internal spacers for nanowire devices |
US9142400B1 (en) | 2012-07-17 | 2015-09-22 | Stc.Unm | Method of making a heteroepitaxial layer on a seed area |
KR101958530B1 (ko) * | 2012-07-27 | 2019-03-14 | 인텔 코포레이션 | 나노와이어 트랜지스터 디바이스 및 형성 기법 |
US8703556B2 (en) * | 2012-08-30 | 2014-04-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making a FinFET device |
US8889564B2 (en) | 2012-08-31 | 2014-11-18 | International Business Machines Corporation | Suspended nanowire structure |
US8785909B2 (en) * | 2012-09-27 | 2014-07-22 | Intel Corporation | Non-planar semiconductor device having channel region with low band-gap cladding layer |
US9041106B2 (en) | 2012-09-27 | 2015-05-26 | Intel Corporation | Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates |
US8735869B2 (en) | 2012-09-27 | 2014-05-27 | Intel Corporation | Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates |
US8823059B2 (en) | 2012-09-27 | 2014-09-02 | Intel Corporation | Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack |
US20140091279A1 (en) * | 2012-09-28 | 2014-04-03 | Jessica S. Kachian | Non-planar semiconductor device having germanium-based active region with release etch-passivation surface |
US8765563B2 (en) * | 2012-09-28 | 2014-07-01 | Intel Corporation | Trench confined epitaxially grown device layer(s) |
KR101994079B1 (ko) * | 2012-10-10 | 2019-09-30 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
KR102002380B1 (ko) * | 2012-10-10 | 2019-07-23 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
US8653599B1 (en) | 2012-11-16 | 2014-02-18 | International Business Machines Corporation | Strained SiGe nanowire having (111)-oriented sidewalls |
US8759874B1 (en) * | 2012-11-30 | 2014-06-24 | Stmicroelectronics, Inc. | FinFET device with isolated channel |
US20140167163A1 (en) * | 2012-12-17 | 2014-06-19 | International Business Machines Corporation | Multi-Fin FinFETs with Epitaxially-Grown Merged Source/Drains |
US8956942B2 (en) | 2012-12-21 | 2015-02-17 | Stmicroelectronics, Inc. | Method of forming a fully substrate-isolated FinFET transistor |
US8969145B2 (en) | 2013-01-19 | 2015-03-03 | International Business Machines Corporation | Wire-last integration method and structure for III-V nanowire devices |
KR102049774B1 (ko) | 2013-01-24 | 2019-11-28 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
JP6251604B2 (ja) * | 2013-03-11 | 2017-12-20 | ルネサスエレクトロニクス株式会社 | フィンfet構造を有する半導体装置及びその製造方法 |
US8900959B2 (en) | 2013-03-12 | 2014-12-02 | International Business Machines Corporation | Non-replacement gate nanomesh field effect transistor with pad regions |
US8778768B1 (en) | 2013-03-12 | 2014-07-15 | International Business Machines Corporation | Non-replacement gate nanomesh field effect transistor with epitixially grown source and drain |
US8951870B2 (en) * | 2013-03-14 | 2015-02-10 | International Business Machines Corporation | Forming strained and relaxed silicon and silicon germanium fins on the same wafer |
US8906768B2 (en) * | 2013-03-15 | 2014-12-09 | GlobalFoundries, Inc. | Wrap around stressor formation |
US10121861B2 (en) * | 2013-03-15 | 2018-11-06 | Intel Corporation | Nanowire transistor fabrication with hardmask layers |
US8940602B2 (en) * | 2013-04-11 | 2015-01-27 | International Business Machines Corporation | Self-aligned structure for bulk FinFET |
CN104124157B (zh) * | 2013-04-23 | 2016-12-28 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置及其制造方法 |
US9082788B2 (en) | 2013-05-31 | 2015-07-14 | Stmicroelectronics, Inc. | Method of making a semiconductor device including an all around gate |
US8987082B2 (en) | 2013-05-31 | 2015-03-24 | Stmicroelectronics, Inc. | Method of making a semiconductor device using sacrificial fins |
US20140353716A1 (en) | 2013-05-31 | 2014-12-04 | Stmicroelectronics, Inc | Method of making a semiconductor device using a dummy gate |
US8962408B2 (en) | 2013-06-04 | 2015-02-24 | International Business Machines Corporation | Replacement gate self-aligned carbon nanostructure transistor |
KR102220806B1 (ko) | 2013-06-20 | 2021-02-26 | 인텔 코포레이션 | 도핑된 서브-핀 영역을 갖는 비평면 반도체 디바이스 및 그 제조 방법 |
US9171843B2 (en) | 2013-08-02 | 2015-10-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and fabricating the same |
US9035277B2 (en) * | 2013-08-01 | 2015-05-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and fabricating the same |
KR102069609B1 (ko) * | 2013-08-12 | 2020-01-23 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
US11404325B2 (en) | 2013-08-20 | 2022-08-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Silicon and silicon germanium nanowire formation |
US9184269B2 (en) * | 2013-08-20 | 2015-11-10 | Taiwan Semiconductor Manufacturing Company Limited | Silicon and silicon germanium nanowire formation |
US9059002B2 (en) * | 2013-08-27 | 2015-06-16 | International Business Machines Corporation | Non-merged epitaxially grown MOSFET devices |
US9252016B2 (en) * | 2013-09-04 | 2016-02-02 | Globalfoundries Inc. | Stacked nanowire |
CN105518840B (zh) * | 2013-10-03 | 2020-06-12 | 英特尔公司 | 用于纳米线晶体管的内部间隔体及其制造方法 |
KR102085525B1 (ko) | 2013-11-27 | 2020-03-09 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
US20150170916A1 (en) * | 2013-12-17 | 2015-06-18 | United Microelectronics Corp. | Semiconductor process for manufacturing epitaxial structures |
KR102171831B1 (ko) | 2013-12-19 | 2020-10-29 | 인텔 코포레이션 | 하이브리드 기하 구조 기반의 활성 영역을 갖는 비평면 반도체 디바이스 |
US9159552B2 (en) | 2013-12-27 | 2015-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a germanium-containing FinFET |
CN106104771A (zh) | 2013-12-27 | 2016-11-09 | 英特尔公司 | 扩散的尖端延伸晶体管 |
CN103700578B (zh) * | 2013-12-27 | 2017-03-01 | 中国科学院微电子研究所 | 一种锗硅纳米线叠层结构的制作方法 |
US9087900B1 (en) | 2014-01-07 | 2015-07-21 | Samsung Electronics Co., Ltd. | Semiconductor device and method for fabricating the same |
US9853154B2 (en) * | 2014-01-24 | 2017-12-26 | Taiwan Semiconductor Manufacturing Company Ltd. | Embedded source or drain region of transistor with downward tapered region under facet region |
KR102155181B1 (ko) | 2014-01-28 | 2020-09-11 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US9263584B2 (en) | 2014-02-11 | 2016-02-16 | International Business Machines Corporation | Field effect transistors employing a thin channel region on a crystalline insulator structure |
US9257527B2 (en) * | 2014-02-14 | 2016-02-09 | International Business Machines Corporation | Nanowire transistor structures with merged source/drain regions using auxiliary pillars |
US9224811B2 (en) | 2014-03-17 | 2015-12-29 | Globalfoundries Inc | Stacked semiconductor device |
US9780216B2 (en) * | 2014-03-19 | 2017-10-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Combination FinFET and methods of forming same |
WO2015147866A1 (en) * | 2014-03-28 | 2015-10-01 | Intel Corporation | Selectively regrown top contact for vertical semiconductor devices |
CN104979211B (zh) | 2014-04-10 | 2018-03-06 | 中芯国际集成电路制造(上海)有限公司 | 纳米线器件及其制造方法 |
US9093478B1 (en) | 2014-04-11 | 2015-07-28 | International Business Machines Corporation | Integrated circuit structure with bulk silicon FinFET and methods of forming |
US9601576B2 (en) * | 2014-04-18 | 2017-03-21 | International Business Machines Corporation | Nanowire FET with tensile channel stressor |
US9230992B2 (en) | 2014-04-30 | 2016-01-05 | International Business Machines Corporation | Semiconductor device including gate channel having adjusted threshold voltage |
KR102146469B1 (ko) | 2014-04-30 | 2020-08-21 | 삼성전자 주식회사 | 반도체 장치 및 이의 제조 방법 |
KR102158961B1 (ko) | 2014-05-13 | 2020-09-24 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
US9548358B2 (en) | 2014-05-19 | 2017-01-17 | International Business Machines Corporation | Dual fill silicon-on-nothing field effect transistor |
US9577100B2 (en) * | 2014-06-16 | 2017-02-21 | Globalfoundries Inc. | FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions |
US9287357B2 (en) * | 2014-06-16 | 2016-03-15 | Samsung Electronics Co., Ltd. | Integrated circuits with Si and non-Si nanosheet FET co-integration with low band-to-band tunneling and methods of fabricating the same |
US9431512B2 (en) * | 2014-06-18 | 2016-08-30 | Globalfoundries Inc. | Methods of forming nanowire devices with spacers and the resulting devices |
US9490340B2 (en) | 2014-06-18 | 2016-11-08 | Globalfoundries Inc. | Methods of forming nanowire devices with doped extension regions and the resulting devices |
US9543440B2 (en) * | 2014-06-20 | 2017-01-10 | International Business Machines Corporation | High density vertical nanowire stack for field effect transistor |
US9502518B2 (en) * | 2014-06-23 | 2016-11-22 | Stmicroelectronics, Inc. | Multi-channel gate-all-around FET |
US9966471B2 (en) | 2014-06-27 | 2018-05-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked Gate-All-Around FinFET and method forming the same |
US9608116B2 (en) * | 2014-06-27 | 2017-03-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | FINFETs with wrap-around silicide and method forming the same |
US9224736B1 (en) | 2014-06-27 | 2015-12-29 | Taiwan Semicondcutor Manufacturing Company, Ltd. | Structure and method for SRAM FinFET device |
US9881993B2 (en) * | 2014-06-27 | 2018-01-30 | Taiwan Semiconductor Manufacturing Company Limited | Method of forming semiconductor structure with horizontal gate all around structure |
US9443978B2 (en) | 2014-07-14 | 2016-09-13 | Samsung Electronics Co., Ltd. | Semiconductor device having gate-all-around transistor and method of manufacturing the same |
US9306019B2 (en) * | 2014-08-12 | 2016-04-05 | GlobalFoundries, Inc. | Integrated circuits with nanowires and methods of manufacturing the same |
KR101628197B1 (ko) * | 2014-08-22 | 2016-06-09 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
US9293588B1 (en) * | 2014-08-28 | 2016-03-22 | International Business Machines Corporation | FinFET with a silicon germanium alloy channel and method of fabrication thereof |
US9343529B2 (en) * | 2014-09-05 | 2016-05-17 | International Business Machines Corporation | Method of formation of germanium nanowires on bulk substrates |
US9793356B2 (en) | 2014-09-12 | 2017-10-17 | Samsung Electronics Co., Ltd. | Semiconductor device and method for fabricating the same |
US9318553B1 (en) | 2014-10-16 | 2016-04-19 | International Business Machines Corporation | Nanowire device with improved epitaxy |
US20160141360A1 (en) * | 2014-11-19 | 2016-05-19 | International Business Machines Corporation | Iii-v semiconductor devices with selective oxidation |
US9391201B2 (en) | 2014-11-25 | 2016-07-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source/drain structure and manufacturing the same |
US9660059B2 (en) | 2014-12-12 | 2017-05-23 | International Business Machines Corporation | Fin replacement in a field-effect transistor |
US9449820B2 (en) | 2014-12-22 | 2016-09-20 | International Business Machines Corporation | Epitaxial growth techniques for reducing nanowire dimension and pitch |
US9882026B2 (en) | 2015-01-13 | 2018-01-30 | Tokyo Electron Limited | Method for forming a nanowire structure |
TWI629790B (zh) * | 2015-01-26 | 2018-07-11 | 聯華電子股份有限公司 | 半導體元件及其製作方法 |
US9508795B2 (en) * | 2015-02-04 | 2016-11-29 | Globalfoundries Inc. | Methods of fabricating nanowire structures |
CN106033725B (zh) | 2015-03-13 | 2020-10-16 | 联华电子股份有限公司 | 半导体元件及其制作工艺 |
US9349860B1 (en) | 2015-03-31 | 2016-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Field effect transistors and methods of forming same |
US9793403B2 (en) | 2015-04-14 | 2017-10-17 | Samsung Electronics Co., Ltd. | Multi-layer fin field effect transistor devices and methods of forming the same |
US9306001B1 (en) | 2015-04-14 | 2016-04-05 | International Business Machines Corporation | Uniformly doped leakage current stopper to counter under channel leakage currents in bulk FinFET devices |
US9748364B2 (en) * | 2015-04-21 | 2017-08-29 | Varian Semiconductor Equipment Associates, Inc. | Method for fabricating three dimensional device |
US9893161B2 (en) | 2015-04-22 | 2018-02-13 | Tokyo Electron Limited | Parasitic capacitance reduction structure for nanowire transistors and method of manufacturing |
KR102380818B1 (ko) * | 2015-04-30 | 2022-03-31 | 삼성전자주식회사 | 반도체 소자 |
US9437502B1 (en) | 2015-06-12 | 2016-09-06 | International Business Machines Corporation | Method to form stacked germanium nanowires and stacked III-V nanowires |
US10134840B2 (en) | 2015-06-15 | 2018-11-20 | International Business Machines Corporation | Series resistance reduction in vertically stacked silicon nanowire transistors |
US10170608B2 (en) * | 2015-06-30 | 2019-01-01 | International Business Machines Corporation | Internal spacer formation from selective oxidation for fin-first wire-last replacement gate-all-around nanowire FET |
EP3112316B1 (en) | 2015-07-02 | 2018-05-02 | IMEC vzw | Method for manufacturing transistor devices comprising multiple nanowire channels |
US9425259B1 (en) * | 2015-07-17 | 2016-08-23 | Samsung Electronics Co., Ltd. | Semiconductor device having a fin |
US9614068B2 (en) | 2015-09-02 | 2017-04-04 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
US9647139B2 (en) | 2015-09-04 | 2017-05-09 | International Business Machines Corporation | Atomic layer deposition sealing integration for nanosheet complementary metal oxide semiconductor with replacement spacer |
CN113611610A (zh) * | 2015-09-10 | 2021-11-05 | 英特尔公司 | 具有腔间隔器的半导体纳米线装置和制造半导体纳米线装置的腔间隔器的方法 |
WO2017044117A1 (en) * | 2015-09-11 | 2017-03-16 | Intel Corporation | Aluminum indium phosphide subfin germanium channel transistors |
US9608099B1 (en) | 2015-09-22 | 2017-03-28 | International Business Machines Corporation | Nanowire semiconductor device |
US9437501B1 (en) | 2015-09-22 | 2016-09-06 | International Business Machines Corporation | Stacked nanowire device width adjustment by gas cluster ion beam (GCIB) |
WO2017052601A1 (en) * | 2015-09-25 | 2017-03-30 | Intel Corporation | Techniques for controlling transistor sub-fin leakage |
US9716142B2 (en) | 2015-10-12 | 2017-07-25 | International Business Machines Corporation | Stacked nanowires |
KR102379701B1 (ko) | 2015-10-19 | 2022-03-28 | 삼성전자주식회사 | 멀티-채널을 갖는 반도체 소자 및 그 형성 방법 |
US9741792B2 (en) * | 2015-10-21 | 2017-08-22 | International Business Machines Corporation | Bulk nanosheet with dielectric isolation |
US9590038B1 (en) * | 2015-10-23 | 2017-03-07 | Samsung Electronics Co., Ltd. | Semiconductor device having nanowire channel |
US9496263B1 (en) * | 2015-10-23 | 2016-11-15 | International Business Machines Corporation | Stacked strained and strain-relaxed hexagonal nanowires |
US10177143B2 (en) * | 2015-10-28 | 2019-01-08 | Taiwan Semiconductor Manufacturing Company Limited | FinFET device and method for fabricating the same |
CN108352400B (zh) | 2015-10-30 | 2021-09-10 | 佛罗里达大学研究基金会有限公司 | 包封的纳米结构及其制造方法 |
US9362355B1 (en) | 2015-11-13 | 2016-06-07 | International Business Machines Corporation | Nanosheet MOSFET with full-height air-gap spacer |
US9899387B2 (en) * | 2015-11-16 | 2018-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-gate device and method of fabrication thereof |
US9754840B2 (en) | 2015-11-16 | 2017-09-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Horizontal gate-all-around device having wrapped-around source and drain |
US9559013B1 (en) * | 2015-11-23 | 2017-01-31 | International Business Machines Corporation | Stacked nanowire semiconductor device |
US10164121B2 (en) * | 2015-11-25 | 2018-12-25 | Samsung Electronics Co., Ltd. | Stacked independently contacted field effect transistor having electrically separated first and second gates |
US10164012B2 (en) * | 2015-11-30 | 2018-12-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9425291B1 (en) | 2015-12-09 | 2016-08-23 | International Business Machines Corporation | Stacked nanosheets by aspect ratio trapping |
KR102434993B1 (ko) * | 2015-12-09 | 2022-08-24 | 삼성전자주식회사 | 반도체 소자 |
US9431301B1 (en) | 2015-12-10 | 2016-08-30 | International Business Machines Corporation | Nanowire field effect transistor (FET) and method for fabricating the same |
US10497701B2 (en) * | 2015-12-16 | 2019-12-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
EP3394896A4 (en) | 2015-12-24 | 2019-12-18 | Intel Corporation | METHODS OF FORMING DOPED SOURCE / DRAIN CONTACTS AND STRUCTURES FORMED IN THIS WAY |
US9722022B2 (en) * | 2015-12-28 | 2017-08-01 | International Business Machines Corporation | Sidewall image transfer nanosheet |
US10157992B2 (en) | 2015-12-28 | 2018-12-18 | Qualcomm Incorporated | Nanowire device with reduced parasitics |
US9899269B2 (en) * | 2015-12-30 | 2018-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd | Multi-gate device and method of fabrication thereof |
KR102367408B1 (ko) * | 2016-01-04 | 2022-02-25 | 삼성전자주식회사 | 복수의 시트들로 구성된 채널 영역을 포함하는 sram 소자 |
KR102366953B1 (ko) * | 2016-01-06 | 2022-02-23 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
US10074730B2 (en) * | 2016-01-28 | 2018-09-11 | International Business Machines Corporation | Forming stacked nanowire semiconductor device |
US9614040B1 (en) * | 2016-02-02 | 2017-04-04 | International Business Machines Corporation | Strained silicon germanium fin with block source/drain epitaxy and improved overlay capacitance |
KR102461174B1 (ko) * | 2016-02-26 | 2022-11-01 | 삼성전자주식회사 | 반도체 소자 |
US9748404B1 (en) * | 2016-02-29 | 2017-08-29 | International Business Machines Corporation | Method for fabricating a semiconductor device including gate-to-bulk substrate isolation |
CN107204311A (zh) * | 2016-03-16 | 2017-09-26 | 上海新昇半导体科技有限公司 | 纳米线半导体器件及其制造方法 |
US9978649B2 (en) | 2016-03-21 | 2018-05-22 | Tokyo Electron Limited | Solid source doping for source and drain extension doping |
US9735269B1 (en) * | 2016-05-06 | 2017-08-15 | International Business Machines Corporation | Integrated strained stacked nanosheet FET |
FR3051970B1 (fr) | 2016-05-25 | 2020-06-12 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Realisation d'une structure de canal formee d'une pluralite de barreaux semi-conducteurs contraints |
KR20170135115A (ko) | 2016-05-30 | 2017-12-08 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US11004985B2 (en) | 2016-05-30 | 2021-05-11 | Samsung Electronics Co., Ltd. | Semiconductor device having multi-thickness nanowire |
KR102429611B1 (ko) | 2016-06-10 | 2022-08-04 | 삼성전자주식회사 | 반도체 장치 제조 방법 |
CN105977299B (zh) * | 2016-06-17 | 2019-12-10 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
US10134905B2 (en) * | 2016-06-30 | 2018-11-20 | International Business Machines Corporation | Semiconductor device including wrap around contact, and method of forming the semiconductor device |
US10236362B2 (en) * | 2016-06-30 | 2019-03-19 | International Business Machines Corporation | Nanowire FET including nanowire channel spacers |
JP7046049B2 (ja) | 2016-07-19 | 2022-04-01 | 東京エレクトロン株式会社 | 三次元半導体デバイス及び製造方法 |
CN109643725B (zh) * | 2016-08-08 | 2022-07-29 | 东京毅力科创株式会社 | 三维半导体器件及制造方法 |
JP6951903B2 (ja) * | 2016-08-10 | 2021-10-20 | 東京エレクトロン株式会社 | 半導体素子のための拡張領域 |
US10840381B2 (en) | 2016-08-10 | 2020-11-17 | International Business Machines Corporation | Nanosheet and nanowire MOSFET with sharp source/drain junction |
US10026652B2 (en) * | 2016-08-17 | 2018-07-17 | Samsung Electronics Co., Ltd. | Horizontal nanosheet FETs and method of manufacturing the same |
US10332986B2 (en) | 2016-08-22 | 2019-06-25 | International Business Machines Corporation | Formation of inner spacer on nanosheet MOSFET |
US9905643B1 (en) | 2016-08-26 | 2018-02-27 | International Business Machines Corporation | Vertically aligned nanowire channels with source/drain interconnects for nanosheet transistors |
US9704863B1 (en) | 2016-09-09 | 2017-07-11 | International Business Machines Corporation | Forming a hybrid channel nanosheet semiconductor structure |
US9620590B1 (en) | 2016-09-20 | 2017-04-11 | International Business Machines Corporation | Nanosheet channel-to-source and drain isolation |
US9704995B1 (en) * | 2016-09-20 | 2017-07-11 | Advanced Micro Devices, Inc. | Gate all around device architecture with local oxide |
US9728621B1 (en) * | 2016-09-28 | 2017-08-08 | International Business Machines Corporation | iFinFET |
CN109952654B (zh) | 2016-11-14 | 2023-05-05 | 东京毅力科创株式会社 | 在纳米线和纳米板处理中防止块体硅电荷转移的方法 |
CN111370489A (zh) * | 2016-11-21 | 2020-07-03 | 华为技术有限公司 | 一种场效应晶体管及其制作方法 |
CN108231589B (zh) * | 2016-12-09 | 2020-06-05 | Imec 非营利协会 | 纳米线半导体器件中内间隔的形成 |
WO2018118007A1 (en) * | 2016-12-19 | 2018-06-28 | Intel Corporation | Condensation for strain control |
US9972542B1 (en) | 2017-01-04 | 2018-05-15 | International Business Machines Corporation | Hybrid-channel nano-sheet FETs |
KR102564325B1 (ko) | 2017-01-04 | 2023-08-07 | 삼성전자주식회사 | 다수의 채널 영역을 가지는 반도체 장치 |
US9935014B1 (en) | 2017-01-12 | 2018-04-03 | International Business Machines Corporation | Nanosheet transistors having different gate dielectric thicknesses on the same chip |
US10068794B2 (en) * | 2017-01-31 | 2018-09-04 | Advanced Micro Devices, Inc. | Gate all around device architecture with hybrid wafer bond technique |
US9881998B1 (en) | 2017-02-02 | 2018-01-30 | International Business Machines Corporation | Stacked nanosheet field effect transistor device with substrate isolation |
US10050107B1 (en) | 2017-02-13 | 2018-08-14 | International Business Machines Corporation | Nanosheet transistors on bulk material |
US10032867B1 (en) | 2017-03-07 | 2018-07-24 | International Business Machines Corporation | Forming bottom isolation layer for nanosheet technology |
JP2018147396A (ja) * | 2017-03-08 | 2018-09-20 | 株式会社ジャパンディスプレイ | 表示装置 |
US10381468B2 (en) * | 2017-03-21 | 2019-08-13 | International Business Machines Corporation | Method and structure for forming improved single electron transistor with gap tunnel barriers |
US10290738B2 (en) * | 2017-04-10 | 2019-05-14 | Globalfoundries Inc. | Methods of forming epi semiconductor material on a recessed fin in the source/drain regions of a FinFET device |
US10930793B2 (en) | 2017-04-21 | 2021-02-23 | International Business Machines Corporation | Bottom channel isolation in nanosheet transistors |
US10304728B2 (en) | 2017-05-01 | 2019-05-28 | Advanced Micro Devices, Inc. | Double spacer immersion lithography triple patterning flow and method |
US10186510B2 (en) | 2017-05-01 | 2019-01-22 | Advanced Micro Devices, Inc. | Vertical gate all around library architecture |
US10121868B1 (en) | 2017-05-03 | 2018-11-06 | Globalfoundries Inc. | Methods of forming epi semiconductor material on a thinned fin in the source/drain regions of a FinFET device |
US9954058B1 (en) | 2017-06-12 | 2018-04-24 | International Business Machines Corporation | Self-aligned air gap spacer for nanosheet CMOS devices |
KR102414182B1 (ko) * | 2017-06-29 | 2022-06-28 | 삼성전자주식회사 | 반도체 소자 |
US10276728B2 (en) * | 2017-07-07 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device including non-volatile memory cells |
CN109390400A (zh) * | 2017-08-08 | 2019-02-26 | 中芯国际集成电路制造(上海)有限公司 | 环栅场效应晶体管及其形成方法 |
US10934485B2 (en) * | 2017-08-25 | 2021-03-02 | Versum Materials Us, Llc | Etching solution for selectively removing silicon over silicon-germanium alloy from a silicon-germanium/ silicon stack during manufacture of a semiconductor device |
US10629679B2 (en) * | 2017-08-31 | 2020-04-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor device and a semiconductor device |
US10332985B2 (en) * | 2017-08-31 | 2019-06-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR102353251B1 (ko) | 2017-09-28 | 2022-01-19 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
US20190103282A1 (en) | 2017-09-29 | 2019-04-04 | Versum Materials Us, Llc | Etching Solution for Simultaneously Removing Silicon and Silicon-Germanium Alloy From a Silicon-Germanium/Silicon Stack During Manufacture of a Semiconductor Device |
US10867866B2 (en) | 2017-10-30 | 2020-12-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10680084B2 (en) | 2017-11-10 | 2020-06-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial structures for fin-like field effect transistors |
US10355102B2 (en) | 2017-11-15 | 2019-07-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method of manufacturing the same |
US10269576B1 (en) | 2017-11-15 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etching and structures formed thereby |
KR101999902B1 (ko) * | 2017-11-15 | 2019-10-01 | 도실리콘 씨오., 엘티디. | 페이싱바를 가지는 낸드 플래쉬 메모리 장치 및 그의 제조 방법 |
US10141403B1 (en) | 2017-11-16 | 2018-11-27 | International Business Machines Corporation | Integrating thin and thick gate dielectric nanosheet transistors on same chip |
KR102399071B1 (ko) | 2017-11-17 | 2022-05-17 | 삼성전자주식회사 | 반도체 장치 |
US10586853B2 (en) | 2017-11-27 | 2020-03-10 | International Business Machines Corporation | Non-planar field effect transistor devices with wrap-around source/drain contacts |
US10312350B1 (en) | 2017-11-28 | 2019-06-04 | International Business Machines Corporation | Nanosheet with changing SiGe percentage for SiGe lateral recess |
WO2019116827A1 (ja) * | 2017-12-12 | 2019-06-20 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及びその製造方法 |
US10276687B1 (en) * | 2017-12-20 | 2019-04-30 | International Business Machines Corporation | Formation of self-aligned bottom spacer for vertical transistors |
US10622208B2 (en) | 2017-12-22 | 2020-04-14 | International Business Machines Corporation | Lateral semiconductor nanotube with hexagonal shape |
US10424651B2 (en) | 2018-01-26 | 2019-09-24 | International Business Machines Corporation | Forming nanosheet transistor using sacrificial spacer and inner spacers |
US10573521B2 (en) | 2018-01-30 | 2020-02-25 | International Business Machines Corporation | Gate metal patterning to avoid gate stack attack due to excessive wet etching |
WO2019150856A1 (ja) | 2018-01-30 | 2019-08-08 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置 |
US10679890B2 (en) | 2018-02-01 | 2020-06-09 | International Business Machines Corporation | Nanosheet structure with isolated gate |
TWI788501B (zh) | 2018-02-02 | 2023-01-01 | 日商索尼半導體解決方案公司 | 半導體裝置 |
CN110233176B (zh) * | 2018-03-05 | 2022-07-22 | 中芯国际集成电路制造(北京)有限公司 | 半导体结构及其形成方法 |
CN111699550B (zh) * | 2018-03-19 | 2023-05-09 | 东京毅力科创株式会社 | 三维器件及其形成方法 |
US10263100B1 (en) | 2018-03-19 | 2019-04-16 | International Business Machines Corporation | Buffer regions for blocking unwanted diffusion in nanosheet transistors |
US10446664B1 (en) | 2018-03-20 | 2019-10-15 | International Business Machines Corporation | Inner spacer formation and contact resistance reduction in nanosheet transistors |
US10566438B2 (en) | 2018-04-02 | 2020-02-18 | International Business Machines Corporation | Nanosheet transistor with dual inner airgap spacers |
US10566445B2 (en) | 2018-04-03 | 2020-02-18 | International Business Machines Corporation | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between gates |
US10243054B1 (en) | 2018-04-03 | 2019-03-26 | International Business Machines Corporation | Integrating standard-gate and extended-gate nanosheet transistors on the same substrate |
US10971585B2 (en) | 2018-05-03 | 2021-04-06 | International Business Machines Corporation | Gate spacer and inner spacer formation for nanosheet transistors having relatively small space between adjacent gates |
US20190341452A1 (en) | 2018-05-04 | 2019-11-07 | International Business Machines Corporation | Iii-v-segmented finfet free of wafer bonding |
US11139402B2 (en) | 2018-05-14 | 2021-10-05 | Synopsys, Inc. | Crystal orientation engineering to achieve consistent nanowire shapes |
US10374034B1 (en) | 2018-05-21 | 2019-08-06 | International Business Machines Corporation | Undercut control in isotropic wet etch processes |
US10461154B1 (en) * | 2018-06-21 | 2019-10-29 | International Business Machines Corporation | Bottom isolation for nanosheet transistors on bulk substrate |
JP7348442B2 (ja) * | 2018-06-22 | 2023-09-21 | 東京エレクトロン株式会社 | ナノワイヤデバイスを形成する方法 |
US10388569B1 (en) | 2018-06-26 | 2019-08-20 | International Business Machines Corporation | Formation of stacked nanosheet semiconductor devices |
US10483166B1 (en) | 2018-06-26 | 2019-11-19 | International Business Machines Corporation | Vertically stacked transistors |
US10930794B2 (en) * | 2018-06-29 | 2021-02-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self-aligned spacers for multi-gate devices and method of fabrication thereof |
CN112437978A (zh) | 2018-07-26 | 2021-03-02 | 索尼半导体解决方案公司 | 半导体装置 |
US11367783B2 (en) | 2018-08-17 | 2022-06-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor device |
JP7351307B2 (ja) | 2018-09-25 | 2023-09-27 | 株式会社ソシオネクスト | 半導体装置及びその製造方法 |
US10910375B2 (en) * | 2018-09-28 | 2021-02-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method of fabrication thereof |
US11462536B2 (en) * | 2018-09-28 | 2022-10-04 | Intel Corporation | Integrated circuit structures having asymmetric source and drain structures |
US11043493B2 (en) * | 2018-10-12 | 2021-06-22 | International Business Machines Corporation | Stacked nanosheet complementary metal oxide semiconductor field effect transistor devices |
US11264506B2 (en) | 2018-10-31 | 2022-03-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
JP7376805B2 (ja) | 2018-11-09 | 2023-11-09 | 株式会社ソシオネクスト | 半導体集積回路装置 |
US11180697B2 (en) | 2018-11-19 | 2021-11-23 | Versum Materials Us, Llc | Etching solution having silicon oxide corrosion inhibitor and method of using the same |
WO2020110733A1 (ja) | 2018-11-26 | 2020-06-04 | 株式会社ソシオネクスト | 半導体集積回路装置 |
WO2020137660A1 (ja) * | 2018-12-25 | 2020-07-02 | 株式会社ソシオネクスト | 半導体集積回路装置 |
CN113196463B (zh) * | 2018-12-26 | 2024-03-01 | 株式会社索思未来 | 半导体集成电路装置 |
US20200219990A1 (en) * | 2019-01-03 | 2020-07-09 | Intel Corporation | Self-aligned gate endcap (sage) architectures with gate-all-around devices above insulator substrates |
US11946148B2 (en) | 2019-01-11 | 2024-04-02 | Versum Materials Us, Llc | Hafnium oxide corrosion inhibitor |
WO2020170715A1 (ja) * | 2019-02-18 | 2020-08-27 | 株式会社ソシオネクスト | 半導体集積回路装置 |
KR102673872B1 (ko) | 2019-03-20 | 2024-06-10 | 삼성전자주식회사 | 집적회로 소자 및 그 제조 방법 |
US11532734B2 (en) | 2019-03-29 | 2022-12-20 | Intel Corporation | Gate-all-around integrated circuit structures having germanium nanowire channel structures |
US10818559B1 (en) | 2019-04-29 | 2020-10-27 | International Business Machines Corporation | Formation of multi-segment channel transistor devices |
US10916630B2 (en) | 2019-04-29 | 2021-02-09 | International Business Machines Corporation | Nanosheet devices with improved electrostatic integrity |
US11264458B2 (en) | 2019-05-20 | 2022-03-01 | Synopsys, Inc. | Crystal orientation engineering to achieve consistent nanowire shapes |
US10892331B2 (en) | 2019-06-05 | 2021-01-12 | International Business Machines Corporation | Channel orientation of CMOS gate-all-around field-effect transistor devices for enhanced carrier mobility |
JP7302658B2 (ja) | 2019-06-18 | 2023-07-04 | 株式会社ソシオネクスト | 半導体装置 |
TW202129061A (zh) | 2019-10-02 | 2021-08-01 | 美商應用材料股份有限公司 | 環繞式閘極輸入/輸出工程 |
US11133310B2 (en) | 2019-10-03 | 2021-09-28 | Tokyo Electron Limited | Method of making multiple nano layer transistors to enhance a multiple stack CFET performance |
US11393916B2 (en) * | 2019-10-22 | 2022-07-19 | Applied Materials, Inc. | Methods for GAA I/O formation by selective epi regrowth |
US11251280B2 (en) * | 2019-12-17 | 2022-02-15 | International Business Machines Corporation | Strained nanowire transistor with embedded epi |
US11715781B2 (en) * | 2020-02-26 | 2023-08-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor devices with improved capacitors |
US11462579B2 (en) * | 2020-02-28 | 2022-10-04 | Omnivision Technologies, Inc. | Pixel and associated transfer-gate fabrication method |
US11245027B2 (en) * | 2020-03-10 | 2022-02-08 | International Business Machines Corporation | Bottom source/drain etch with fin-cut-last-VTFET |
US11335552B2 (en) * | 2020-04-17 | 2022-05-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure and formation method of semiconductor device with oxide semiconductor channel |
US11557659B2 (en) * | 2020-04-29 | 2023-01-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gate all around transistor device and fabrication methods thereof |
US11961763B2 (en) | 2020-07-13 | 2024-04-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self-aligned metal gate for multigate device and method of forming thereof |
US11653581B2 (en) * | 2020-08-13 | 2023-05-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | RRAM device structure and manufacturing method |
US11508621B2 (en) * | 2020-08-21 | 2022-11-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing a semiconductor device and a semiconductor device |
US11984483B2 (en) | 2021-03-26 | 2024-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacturing thereof |
US11862640B2 (en) | 2021-09-29 | 2024-01-02 | Advanced Micro Devices, Inc. | Cross field effect transistor (XFET) library architecture power routing |
US20230163212A1 (en) * | 2021-11-19 | 2023-05-25 | Intel Corporation | Gate-all-around transistor device with compressively strained channel layers |
JP2023110192A (ja) * | 2022-01-28 | 2023-08-09 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007013156A (ja) * | 2005-06-28 | 2007-01-18 | Samsung Electronics Co Ltd | フィンfetcmosとその製造方法及びそれを備えるメモリ素子 |
US20100259296A1 (en) * | 2009-04-14 | 2010-10-14 | Zvi Or-Bach | Method for fabrication of a semiconductor device and structure |
US20100295021A1 (en) * | 2009-05-21 | 2010-11-25 | International Business Machines Corporation | Single Gate Inverter Nanowire Mesh |
US20160211276A1 (en) * | 2015-01-20 | 2016-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Devices and Manufacturing Methods Thereof |
Family Cites Families (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10144607A (ja) | 1996-11-13 | 1998-05-29 | Hitachi Ltd | 半導体基板およびその製造方法ならびにそれを用いた半導体装置およびその製造方法 |
US6365465B1 (en) * | 1999-03-19 | 2002-04-02 | International Business Machines Corporation | Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniques |
WO2003096385A2 (en) | 2002-05-07 | 2003-11-20 | Asm America, Inc. | Silicon-on-insulator structures and methods |
US6770516B2 (en) * | 2002-09-05 | 2004-08-03 | Taiwan Semiconductor Manufacturing Company | Method of forming an N channel and P channel FINFET device on the same semiconductor substrate |
JP2004172178A (ja) | 2002-11-18 | 2004-06-17 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
FR2853454B1 (fr) * | 2003-04-03 | 2005-07-15 | St Microelectronics Sa | Transistor mos haute densite |
US6867433B2 (en) * | 2003-04-30 | 2005-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor-on-insulator chip incorporating strained-channel partially-depleted, fully-depleted, and multiple-gate transistors |
KR100553683B1 (ko) | 2003-05-02 | 2006-02-24 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
KR100487567B1 (ko) * | 2003-07-24 | 2005-05-03 | 삼성전자주식회사 | 핀 전계효과 트랜지스터 형성 방법 |
US6921700B2 (en) * | 2003-07-31 | 2005-07-26 | Freescale Semiconductor, Inc. | Method of forming a transistor having multiple channels |
US6855588B1 (en) * | 2003-10-07 | 2005-02-15 | United Microelectronics Corp. | Method of fabricating a double gate MOSFET device |
JP4904815B2 (ja) | 2003-10-09 | 2012-03-28 | 日本電気株式会社 | 半導体装置及びその製造方法 |
KR100578130B1 (ko) * | 2003-10-14 | 2006-05-10 | 삼성전자주식회사 | 핀 전계효과 트랜지스터를 위한 다중 실리콘 핀 및 그형성 방법 |
KR100506460B1 (ko) * | 2003-10-31 | 2005-08-05 | 주식회사 하이닉스반도체 | 반도체소자의 트랜지스터 및 그 형성방법 |
KR100528486B1 (ko) * | 2004-04-12 | 2005-11-15 | 삼성전자주식회사 | 불휘발성 메모리 소자 및 그 형성 방법 |
KR100625177B1 (ko) | 2004-05-25 | 2006-09-20 | 삼성전자주식회사 | 멀티-브리지 채널형 모오스 트랜지스터의 제조 방법 |
JP4796329B2 (ja) | 2004-05-25 | 2011-10-19 | 三星電子株式会社 | マルチ−ブリッジチャンネル型mosトランジスタの製造方法 |
US7491988B2 (en) * | 2004-06-28 | 2009-02-17 | Intel Corporation | Transistors with increased mobility in the channel zone and method of fabrication |
KR100555567B1 (ko) * | 2004-07-30 | 2006-03-03 | 삼성전자주식회사 | 다중가교채널 트랜지스터 제조 방법 |
TWI283066B (en) * | 2004-09-07 | 2007-06-21 | Samsung Electronics Co Ltd | Field effect transistor (FET) having wire channels and method of fabricating the same |
JP2006086188A (ja) * | 2004-09-14 | 2006-03-30 | Seiko Epson Corp | 半導体装置および半導体装置の製造方法 |
US20080121932A1 (en) | 2006-09-18 | 2008-05-29 | Pushkar Ranade | Active regions with compatible dielectric layers |
KR100594327B1 (ko) * | 2005-03-24 | 2006-06-30 | 삼성전자주식회사 | 라운드 형태의 단면을 가지는 나노와이어를 구비한 반도체소자 및 그 제조 방법 |
KR100618900B1 (ko) * | 2005-06-13 | 2006-09-01 | 삼성전자주식회사 | 다중 채널을 갖는 모스 전계효과 트랜지스터의 제조방법 및그에 따라 제조된 다중 채널을 갖는 모스 전계효과트랜지스터 |
KR100645065B1 (ko) * | 2005-06-23 | 2006-11-10 | 삼성전자주식회사 | 핀 전계 효과 트랜지스터와 이를 구비하는 비휘발성 메모리장치 및 그 형성 방법 |
KR101155176B1 (ko) * | 2005-07-12 | 2012-06-11 | 삼성전자주식회사 | 방향성이 조절된 단결정 와이어 및 이를 적용한트랜지스터의 제조방법 |
FR2895835B1 (fr) | 2005-12-30 | 2008-05-09 | Commissariat Energie Atomique | Realisation sur une structure de canal a plusieurs branches d'une grille de transistor et de moyens pour isoler cette grille des regions de source et de drain |
KR100718159B1 (ko) | 2006-05-18 | 2007-05-14 | 삼성전자주식회사 | 와이어-타입 반도체 소자 및 그 제조 방법 |
US7777275B2 (en) * | 2006-05-18 | 2010-08-17 | Macronix International Co., Ltd. | Silicon-on-insulator structures |
US20080135949A1 (en) * | 2006-12-08 | 2008-06-12 | Agency For Science, Technology And Research | Stacked silicon-germanium nanowire structure and method of forming the same |
JP2008172082A (ja) * | 2007-01-12 | 2008-07-24 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
US7781827B2 (en) * | 2007-01-24 | 2010-08-24 | Mears Technologies, Inc. | Semiconductor device with a vertical MOSFET including a superlattice and related methods |
EP1975988B1 (en) | 2007-03-28 | 2015-02-25 | Siltronic AG | Multilayered semiconductor wafer and process for its production |
US7821061B2 (en) | 2007-03-29 | 2010-10-26 | Intel Corporation | Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications |
JP4381428B2 (ja) * | 2007-04-10 | 2009-12-09 | シャープ株式会社 | 微細構造体の配列方法及び微細構造体を配列した基板、並びに集積回路装置及び表示素子 |
JP4473889B2 (ja) | 2007-04-26 | 2010-06-02 | 株式会社東芝 | 半導体装置 |
JP2009054705A (ja) * | 2007-08-24 | 2009-03-12 | Toshiba Corp | 半導体基板、半導体装置およびその製造方法 |
US7674669B2 (en) * | 2007-09-07 | 2010-03-09 | Micron Technology, Inc. | FIN field effect transistor |
JP4966153B2 (ja) | 2007-10-05 | 2012-07-04 | 株式会社東芝 | 電界効果トランジスタおよびその製造方法 |
WO2009072984A1 (en) * | 2007-12-07 | 2009-06-11 | Agency For Science, Technology And Research | A silicon-germanium nanowire structure and a method of forming the same |
US7727830B2 (en) * | 2007-12-31 | 2010-06-01 | Intel Corporation | Fabrication of germanium nanowire transistors |
WO2009151001A1 (ja) * | 2008-06-09 | 2009-12-17 | 独立行政法人産業技術総合研究所 | ナノワイヤ電界効果トランジスタ及びその作製方法、並びにこれを含む集積回路 |
JP5553266B2 (ja) | 2008-06-09 | 2014-07-16 | 独立行政法人産業技術総合研究所 | ナノワイヤ電界効果トランジスタの作製方法 |
JP2010010382A (ja) * | 2008-06-26 | 2010-01-14 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2010010473A (ja) | 2008-06-27 | 2010-01-14 | Toshiba Corp | 半導体装置及びその製造方法 |
WO2010003928A2 (en) | 2008-07-06 | 2010-01-14 | Interuniversitair Microelektronica Centrum Vzw (Imec) | Method for doping semiconductor structures and the semiconductor device thereof |
US7884004B2 (en) * | 2009-02-04 | 2011-02-08 | International Business Machines Corporation | Maskless process for suspending and thinning nanowires |
US7893492B2 (en) | 2009-02-17 | 2011-02-22 | International Business Machines Corporation | Nanowire mesh device and method of fabricating same |
US8395191B2 (en) * | 2009-10-12 | 2013-03-12 | Monolithic 3D Inc. | Semiconductor device and structure |
US8110467B2 (en) | 2009-04-21 | 2012-02-07 | International Business Machines Corporation | Multiple Vt field-effect transistor devices |
US8422273B2 (en) * | 2009-05-21 | 2013-04-16 | International Business Machines Corporation | Nanowire mesh FET with multiple threshold voltages |
US8440517B2 (en) * | 2010-10-13 | 2013-05-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET and method of fabricating the same |
US8216902B2 (en) * | 2009-08-06 | 2012-07-10 | International Business Machines Corporation | Nanomesh SRAM cell |
US8169024B2 (en) * | 2009-08-18 | 2012-05-01 | International Business Machines Corporation | Method of forming extremely thin semiconductor on insulator (ETSOI) device without ion implantation |
US8426923B2 (en) * | 2009-12-02 | 2013-04-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple-gate semiconductor device and method |
US8263451B2 (en) * | 2010-02-26 | 2012-09-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Epitaxy profile engineering for FinFETs |
US8399314B2 (en) * | 2010-03-25 | 2013-03-19 | International Business Machines Corporation | p-FET with a strained nanowire channel and embedded SiGe source and drain stressors |
US8445337B2 (en) * | 2010-05-12 | 2013-05-21 | International Business Machines Corporation | Generation of multiple diameter nanowire field effect transistors |
US8729627B2 (en) * | 2010-05-14 | 2014-05-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained channel integrated circuit devices |
US8389416B2 (en) * | 2010-11-22 | 2013-03-05 | Tokyo Electron Limited | Process for etching silicon with selectivity to silicon-germanium |
US8753942B2 (en) | 2010-12-01 | 2014-06-17 | Intel Corporation | Silicon and silicon germanium nanowire structures |
TWI582999B (zh) * | 2011-03-25 | 2017-05-11 | 半導體能源研究所股份有限公司 | 場效電晶體及包含該場效電晶體之記憶體與半導體電路 |
KR102083494B1 (ko) * | 2013-10-02 | 2020-03-02 | 삼성전자 주식회사 | 나노와이어 트랜지스터를 포함하는 반도체 소자 |
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007013156A (ja) * | 2005-06-28 | 2007-01-18 | Samsung Electronics Co Ltd | フィンfetcmosとその製造方法及びそれを備えるメモリ素子 |
US20100259296A1 (en) * | 2009-04-14 | 2010-10-14 | Zvi Or-Bach | Method for fabrication of a semiconductor device and structure |
US20100295021A1 (en) * | 2009-05-21 | 2010-11-25 | International Business Machines Corporation | Single Gate Inverter Nanowire Mesh |
US20160211276A1 (en) * | 2015-01-20 | 2016-07-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor Devices and Manufacturing Methods Thereof |
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