JP2011181918A - 電界効果トランジスタおよび半導体装置 - Google Patents
電界効果トランジスタおよび半導体装置 Download PDFInfo
- Publication number
- JP2011181918A JP2011181918A JP2011022507A JP2011022507A JP2011181918A JP 2011181918 A JP2011181918 A JP 2011181918A JP 2011022507 A JP2011022507 A JP 2011022507A JP 2011022507 A JP2011022507 A JP 2011022507A JP 2011181918 A JP2011181918 A JP 2011181918A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- conductor electrode
- gate
- conductor
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 207
- 230000005669 field effect Effects 0.000 title claims abstract description 16
- 239000004020 conductor Substances 0.000 claims abstract description 208
- 239000000463 material Substances 0.000 claims description 22
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000000969 carrier Substances 0.000 abstract description 5
- 230000010354 integration Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 76
- 239000000758 substrate Substances 0.000 description 16
- 239000012212 insulator Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- -1 indium gallium zinc oxide compounds Chemical class 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 125000003636 chemical group Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7839—Field effect transistors with field effect produced by an insulated gate with Schottky drain or source contact
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Liquid Crystal (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
【解決手段】半導体層の電子親和力よりも仕事関数の小さな導体との接合においては、導体より半導体層にキャリアが注入された領域が生じる。そのような領域を電界効果トランジスタ(FET)のオフセット領域、あるいは、インバータ等の半導体回路の抵抗として用いる。また、ひとつの半導体層中にこれらを設けることにより集積化した半導体装置を作製できる。
【選択図】図1
Description
本実施の形態では、図2に示す半導体回路について説明する。図2(A)は半導体回路の断面の概念図、図2(B)は、図2(A)の下側からこの半導体回路を見た様子を示す。この半導体回路は、図2(A)に示すように、半導体層102の一方の面に接して、第1の導体電極103a、第2の導体電極103b、第3の導体電極103cを有する。また、半導体層102の他方の面にはゲート105を有する。ゲート105と半導体層102の間にはゲート絶縁膜104を有する。
本実施の形態では、図3に示す半導体回路について説明する。図3(A)は半導体回路の断面の概念図、図3(B)は、図3(A)の下側から、この半導体回路を見た様子を示す。図3(A)に示すように、この半導体回路も図2の半導体装置と同様に、半導体層102の一方の面に接して、第1の導体電極103a、第2の導体電極103b、第3の導体電極103cを有する。また、半導体層102の他方の面にはゲート105を有する。ゲート105と半導体層102の間にはゲート絶縁膜104を有する。半導体層102はI型で、バンドギャップが2電子ボルト以上4電子ボルト未満、好ましくは、2.9電子ボルト以上3.5電子ボルト未満とするとよい。
本実施の形態では、半導体装置の作製方法について、図4を用いて説明する。まず、図4(A)に示すように、基板101上に、半導体層102、ゲート絶縁膜104を形成する。基板101としては、様々なものが用いられるが、その後の処理に耐えられる物性を有していることが必要である。また、その表面は絶縁性であることが好ましい。すなわち、基板101は絶縁体単独、あるいは絶縁体や金属や半導体の表面に絶縁層を形成したもの等であることが好ましい。
上記実施の形態1乃至3で示した半導体装置は、さまざまな電子機器に用いることができる。例えば、液晶ディスプレー、EL(Electro Luminescence)ディスプレー、FE(Field Emission)ディスプレー等の表示装置の駆動回路、イメージセンサの駆動回路、半導体メモリ等である。また、それらを用いた各種電子機器、例えば、テレビジョン、パーソナルコンピュータ、携帯電話等の通信機器、電子手帳、携帯音楽プレーヤ等である。
102 半導体層
103a 第1の導体電極
103b 第2の導体電極
103c 第3の導体電極
104 ゲート絶縁膜
105 ゲート
106 層間絶縁物
Claims (19)
- 半導体層と、その一方の面に接して設けられた第1および第2の導体電極と、半導体層の他方の面に設けられたゲートとを有し、第1の導体電極とゲートとの間、あるいは第2の導体電極とゲートとの間の少なくとも一方にオフセット領域を有し、前記半導体層のバンドギャップは2電子ボルト以上4電子ボルト未満であることが特徴の電界効果トランジスタ。
- 半導体層と、その一方の面に接して設けられた第1および第2の導体電極と、半導体層の他方の面に設けられたゲートとを有し、第1の導体電極とゲートとの間、あるいは第2の導体電極とゲートとの間の少なくとも一方にオフセット領域を有する電界効果トランジスタ。
- 半導体層と、その一方の面に接して設けられた第1および第2の導体電極と、同じ面に設けられたゲートとを有し、第1の導体電極とゲートとの間、あるいは第2の導体電極とゲートとの間の少なくとも一方にオフセット領域を有する電界効果トランジスタ。
- 半導体層と、その一方の面に接して設けられた第1乃至第3の導体電極と、半導体層の他方の面に設けられたゲートとを有し、前記ゲートは前記第1の導体電極と前記第2の導体電極の間の領域の少なくとも一部と重なり、かつ、第2の導体電極と第3の導体電極の間の領域とは重ならないことを特徴とする半導体装置。
- 半導体層と、その一方の面に接して設けられた第1乃至第3の導体電極と、同じ面に設けられたゲートとを有し、前記ゲートは前記第1の導体電極と前記第2の導体電極の間の領域の少なくとも一部と重なり、かつ、第2の導体電極と第3の導体電極の間の領域とは重ならないことを特徴とする半導体装置。
- 前記第1の導体電極および前記第2の導体電極の半導体層と接する部分の仕事関数は、半導体層の電子親和力と0.3電子ボルトの和よりも小さいことを特徴とする請求項1乃至3のいずれか一に記載の電界効果トランジスタ。
- 前記第1の導体電極および前記第2の導体電極の半導体層と接する部分の仕事関数は、半導体層の電子親和力と0.3電子ボルトの和よりも小さいことを特徴とする請求項4または5のいずれかに記載の半導体装置。
- 前記第1の導体電極および第2の導体電極と半導体層はオーミック接合であることを特徴とする請求項1乃至3のいずれか一に記載の電界効果トランジスタ。
- 前記第1の導体電極および第2の導体電極と半導体層はオーミック接合であることを特徴とする請求項4または5のいずれかに記載の半導体装置。
- 前記半導体層と前記ゲートとの間にはゲート絶縁膜を有する請求項1乃至3のいずれか一に記載の電界効果トランジスタ。
- 前記半導体層と前記ゲートとの間にはゲート絶縁膜を有する請求項4または5のいずれかに記載の半導体装置。
- 前記ゲートの、前記半導体層に最も近い部分の材料の仕事関数は、半導体層の電子親和力と0.6電子ボルトの和よりも大きいことを特徴とする請求項1乃至3のいずれか一に記載の電界効果トランジスタ。
- 前記ゲートの、前記半導体層に最も近い部分の材料の仕事関数は、半導体層の電子親和力と0.6電子ボルトの和よりも大きいことを特徴とする請求項4または5のいずれかに記載の半導体装置。
- 前記オフセット領域の幅は、10nm以上100nm以下であることを特徴とする請求項1乃至3のいずれか一に記載の電界効果トランジスタ。
- 前記第1の導体電極と前記第2の導体電極の間における前記半導体層の幅は、前記第2の導体電極と前記第3の導体電極の間における前記半導体層の幅よりも広いことを特徴とする請求項4または5のいずれかに記載の半導体装置。
- 前記半導体層はI型であることを特徴とする請求項1乃至3のいずれか一に記載の電界効果トランジスタ。
- 前記半導体層はI型であることを特徴とする請求項4または5のいずれかに記載の半導体装置。
- 前記ゲートは、白金、金、タングステン、窒化インジウムのいずれかからなることを特徴とする請求項1乃至3のいずれか一に記載の電界効果トランジスタ。
- 前記ゲートは、白金、金、タングステン、窒化インジウムのいずれかからなることを特徴とする請求項4または5のいずれかに記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011022507A JP5715432B2 (ja) | 2010-02-05 | 2011-02-04 | インバータ |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010024580 | 2010-02-05 | ||
JP2010024580 | 2010-02-05 | ||
JP2011022507A JP5715432B2 (ja) | 2010-02-05 | 2011-02-04 | インバータ |
Related Child Applications (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012182291A Division JP2013008988A (ja) | 2010-02-05 | 2012-08-21 | 半導体装置 |
JP2013088009A Division JP5675886B2 (ja) | 2010-02-05 | 2013-04-19 | 半導体装置 |
JP2014250947A Division JP5702886B1 (ja) | 2010-02-05 | 2014-12-11 | トランジスタ |
JP2015050708A Division JP6031547B2 (ja) | 2010-02-05 | 2015-03-13 | 半導体装置 |
JP2015056324A Division JP6096233B2 (ja) | 2010-02-05 | 2015-03-19 | 半導体装置の作製方法、及び半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011181918A true JP2011181918A (ja) | 2011-09-15 |
JP2011181918A5 JP2011181918A5 (ja) | 2014-02-20 |
JP5715432B2 JP5715432B2 (ja) | 2015-05-07 |
Family
ID=44353022
Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011022507A Expired - Fee Related JP5715432B2 (ja) | 2010-02-05 | 2011-02-04 | インバータ |
JP2012182291A Withdrawn JP2013008988A (ja) | 2010-02-05 | 2012-08-21 | 半導体装置 |
JP2013088009A Expired - Fee Related JP5675886B2 (ja) | 2010-02-05 | 2013-04-19 | 半導体装置 |
JP2014250947A Expired - Fee Related JP5702886B1 (ja) | 2010-02-05 | 2014-12-11 | トランジスタ |
JP2015050708A Expired - Fee Related JP6031547B2 (ja) | 2010-02-05 | 2015-03-13 | 半導体装置 |
JP2015056324A Expired - Fee Related JP6096233B2 (ja) | 2010-02-05 | 2015-03-19 | 半導体装置の作製方法、及び半導体装置 |
Family Applications After (5)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012182291A Withdrawn JP2013008988A (ja) | 2010-02-05 | 2012-08-21 | 半導体装置 |
JP2013088009A Expired - Fee Related JP5675886B2 (ja) | 2010-02-05 | 2013-04-19 | 半導体装置 |
JP2014250947A Expired - Fee Related JP5702886B1 (ja) | 2010-02-05 | 2014-12-11 | トランジスタ |
JP2015050708A Expired - Fee Related JP6031547B2 (ja) | 2010-02-05 | 2015-03-13 | 半導体装置 |
JP2015056324A Expired - Fee Related JP6096233B2 (ja) | 2010-02-05 | 2015-03-19 | 半導体装置の作製方法、及び半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8436431B2 (ja) |
JP (6) | JP5715432B2 (ja) |
KR (1) | KR101791713B1 (ja) |
TW (2) | TWI573276B (ja) |
WO (1) | WO2011096286A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013065600A1 (ja) * | 2011-11-02 | 2013-05-10 | シャープ株式会社 | 薄膜トランジスタ、その製造方法、および表示装置 |
JP2015046561A (ja) * | 2012-11-28 | 2015-03-12 | 株式会社半導体エネルギー研究所 | 表示装置 |
US9401432B2 (en) | 2014-01-16 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
JP2017126791A (ja) * | 2012-04-13 | 2017-07-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JPWO2016079639A1 (ja) * | 2014-11-20 | 2017-11-02 | 株式会社半導体エネルギー研究所 | 半導体装置、回路基板および電子機器 |
JP2022095838A (ja) * | 2020-08-20 | 2022-06-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011099342A1 (en) * | 2010-02-10 | 2011-08-18 | Semiconductor Energy Laboratory Co., Ltd. | Field effect transistor |
US9209314B2 (en) | 2010-06-16 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Field effect transistor |
KR101856722B1 (ko) | 2010-09-22 | 2018-05-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 파워 절연 게이트형 전계 효과 트랜지스터 |
US8736315B2 (en) | 2011-09-30 | 2014-05-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP6099372B2 (ja) | 2011-12-05 | 2017-03-22 | 株式会社半導体エネルギー研究所 | 半導体装置及び電子機器 |
US9196741B2 (en) * | 2012-02-03 | 2015-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
WO2016075788A1 (ja) * | 2014-11-13 | 2016-05-19 | 三菱電機株式会社 | 防水型制御ユニット、及び防水型制御ユニットの製造方法 |
KR102392225B1 (ko) * | 2016-08-30 | 2022-04-28 | 린텍 가부시키가이샤 | 수지 조성물, 수지 시트, 및 반도체 장치 |
JP6648671B2 (ja) * | 2016-11-15 | 2020-02-14 | 株式会社デンソー | 金属部材および金属部材と樹脂部材との複合体並びにそれらの製造方法 |
CN107623041B (zh) * | 2017-09-08 | 2021-05-28 | 河南大学 | 一种基于氧化物薄膜晶体管的反相器及其制造方法 |
FR3092633B1 (fr) | 2019-02-08 | 2021-01-22 | Hutchinson | Dispositif d’amortissement de vibrations, navire muni d’un tel dispositif et procédé lié. |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58122774A (ja) * | 1982-01-14 | 1983-07-21 | Toshiba Corp | 半導体装置及びその製造方法 |
JPH06104431A (ja) * | 1992-09-11 | 1994-04-15 | Hitachi Ltd | 論理回路と、これを用いたラインイメージセンサと、このラインイメージセンサを用いたファクシミリ装置 |
JPH09219493A (ja) * | 1996-02-08 | 1997-08-19 | Hitachi Ltd | 抵抗素子及びこの製造方法並びにそれが集積された半導体装置 |
JP2003050405A (ja) * | 2000-11-15 | 2003-02-21 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタアレイ、その製造方法およびそれを用いた表示パネル |
WO2008096768A1 (ja) * | 2007-02-09 | 2008-08-14 | Idemitsu Kosan Co., Ltd. | 薄膜トランジスタの製造方法、薄膜トランジスタ、薄膜トランジスタ基板及び画像表示装置と、画像表示装置と、半導体デバイス |
Family Cites Families (132)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56115558A (en) * | 1980-02-18 | 1981-09-10 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit and manufacture thereof |
JP2887032B2 (ja) | 1992-10-30 | 1999-04-26 | シャープ株式会社 | 薄膜トランジスタ回路およびその製造方法 |
US5572040A (en) | 1993-07-12 | 1996-11-05 | Peregrine Semiconductor Corporation | High-frequency wireless communication system on a single ultrathin silicon on sapphire chip |
US5863823A (en) | 1993-07-12 | 1999-01-26 | Peregrine Semiconductor Corporation | Self-aligned edge control in silicon on insulator |
US5973382A (en) | 1993-07-12 | 1999-10-26 | Peregrine Semiconductor Corporation | Capacitor on ultrathin semiconductor on insulator |
US5864162A (en) | 1993-07-12 | 1999-01-26 | Peregrine Seimconductor Corporation | Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire |
US5930638A (en) | 1993-07-12 | 1999-07-27 | Peregrine Semiconductor Corp. | Method of making a low parasitic resistor on ultrathin silicon on insulator |
US5973363A (en) | 1993-07-12 | 1999-10-26 | Peregrine Semiconductor Corp. | CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator |
US5416043A (en) | 1993-07-12 | 1995-05-16 | Peregrine Semiconductor Corporation | Minimum charge FET fabricated on an ultrathin silicon on sapphire wafer |
US5581092A (en) | 1993-09-07 | 1996-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Gate insulated semiconductor device |
JP3312083B2 (ja) | 1994-06-13 | 2002-08-05 | 株式会社半導体エネルギー研究所 | 表示装置 |
TW345654B (en) | 1995-02-15 | 1998-11-21 | Handotai Energy Kenkyusho Kk | Active matrix display device |
WO1996025765A1 (en) * | 1995-02-16 | 1996-08-22 | Peregrine Semiconductor Corporation | Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon-on-sapphire |
KR100394896B1 (ko) | 1995-08-03 | 2003-11-28 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 투명스위칭소자를포함하는반도체장치 |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP3499381B2 (ja) | 1996-09-21 | 2004-02-23 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置およびその作製方法 |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP3293563B2 (ja) * | 1998-08-13 | 2002-06-17 | 日本電気株式会社 | 電界効果トランジスタ及びその駆動方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
US6531713B1 (en) | 1999-03-19 | 2003-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and manufacturing method thereof |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
EP1443130B1 (en) | 2001-11-05 | 2011-09-28 | Japan Science and Technology Agency | Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
JP3818247B2 (ja) | 2002-09-25 | 2006-09-06 | 凸版印刷株式会社 | 印刷物 |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP2004193446A (ja) * | 2002-12-13 | 2004-07-08 | Sanyo Electric Co Ltd | 半導体装置の製造方法および薄膜トランジスタの製造方法 |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
US7129539B2 (en) * | 2003-05-15 | 2006-10-31 | Sharp Kabushiki Kaisha | Semiconductor storage device and manufacturing method therefor, semiconductor device, portable electronic equipment and IC card |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
JP2005051223A (ja) * | 2003-07-11 | 2005-02-24 | Nec Corp | 薄膜トランジスタ、tft基板、液晶表示装置、及び、薄膜トランジスタの製造方法 |
US7365361B2 (en) | 2003-07-23 | 2008-04-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
JP2005079277A (ja) | 2003-08-29 | 2005-03-24 | Toshiba Corp | 電界効果トランジスタ |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
EP1737044B1 (en) | 2004-03-12 | 2014-12-10 | Japan Science and Technology Agency | Amorphous oxide and thin film transistor |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7282782B2 (en) * | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
JP4245158B2 (ja) * | 2004-04-19 | 2009-03-25 | パナソニック株式会社 | Fet型強誘電体メモリセルおよびfet型強誘電体メモリ |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7868326B2 (en) | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
JP5053537B2 (ja) | 2004-11-10 | 2012-10-17 | キヤノン株式会社 | 非晶質酸化物を利用した半導体デバイス |
CN101057333B (zh) | 2004-11-10 | 2011-11-16 | 佳能株式会社 | 发光器件 |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
EP1812969B1 (en) | 2004-11-10 | 2015-05-06 | Canon Kabushiki Kaisha | Field effect transistor comprising an amorphous oxide |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI562380B (en) | 2005-01-28 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US7608531B2 (en) | 2005-01-28 | 2009-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP4560502B2 (ja) * | 2005-09-06 | 2010-10-13 | キヤノン株式会社 | 電界効果型トランジスタ |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP4981283B2 (ja) | 2005-09-06 | 2012-07-18 | キヤノン株式会社 | アモルファス酸化物層を用いた薄膜トランジスタ |
JP5064747B2 (ja) * | 2005-09-29 | 2012-10-31 | 株式会社半導体エネルギー研究所 | 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法 |
EP3614442A3 (en) | 2005-09-29 | 2020-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufactoring method thereof |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
KR101117948B1 (ko) | 2005-11-15 | 2012-02-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 액정 디스플레이 장치 제조 방법 |
JP2007142041A (ja) * | 2005-11-16 | 2007-06-07 | Toshiba Corp | 半導体装置 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
US8274078B2 (en) | 2007-04-25 | 2012-09-25 | Canon Kabushiki Kaisha | Metal oxynitride semiconductor containing zinc |
KR101334182B1 (ko) * | 2007-05-28 | 2013-11-28 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터의 제조방법 |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
JP5242083B2 (ja) | 2007-06-13 | 2013-07-24 | 出光興産株式会社 | 結晶酸化物半導体、及びそれを用いてなる薄膜トランジスタ |
JP5354999B2 (ja) | 2007-09-26 | 2013-11-27 | キヤノン株式会社 | 電界効果型トランジスタの製造方法 |
JP5268132B2 (ja) * | 2007-10-30 | 2013-08-21 | 富士フイルム株式会社 | 酸化物半導体素子とその製造方法、薄膜センサおよび電気光学装置 |
CN103258857B (zh) * | 2007-12-13 | 2016-05-11 | 出光兴产株式会社 | 使用了氧化物半导体的场效应晶体管及其制造方法 |
JP5215158B2 (ja) | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
JP4555358B2 (ja) * | 2008-03-24 | 2010-09-29 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタおよび表示装置 |
JP5704790B2 (ja) * | 2008-05-07 | 2015-04-22 | キヤノン株式会社 | 薄膜トランジスタ、および、表示装置 |
JP5202094B2 (ja) * | 2008-05-12 | 2013-06-05 | キヤノン株式会社 | 半導体装置 |
KR100958006B1 (ko) * | 2008-06-18 | 2010-05-17 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치 |
JP5339792B2 (ja) * | 2008-07-02 | 2013-11-13 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタ、その製造方法、およびそれを用いた表示装置 |
JP2010021170A (ja) | 2008-07-08 | 2010-01-28 | Hitachi Ltd | 半導体装置およびその製造方法 |
JP5345349B2 (ja) * | 2008-07-24 | 2013-11-20 | 富士フイルム株式会社 | 薄膜電界効果型トランジスタ |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
JP5629999B2 (ja) * | 2009-09-29 | 2014-11-26 | 大日本印刷株式会社 | Icタグ及びその製造方法 |
-
2011
- 2011-01-17 KR KR1020127019627A patent/KR101791713B1/ko active IP Right Grant
- 2011-01-17 WO PCT/JP2011/051143 patent/WO2011096286A1/en active Application Filing
- 2011-01-25 TW TW105100941A patent/TWI573276B/zh active
- 2011-01-25 TW TW100102652A patent/TWI570919B/zh active
- 2011-01-26 US US13/014,060 patent/US8436431B2/en active Active
- 2011-02-04 JP JP2011022507A patent/JP5715432B2/ja not_active Expired - Fee Related
-
2012
- 2012-08-21 JP JP2012182291A patent/JP2013008988A/ja not_active Withdrawn
-
2013
- 2013-04-02 US US13/855,203 patent/US8791529B2/en active Active
- 2013-04-19 JP JP2013088009A patent/JP5675886B2/ja not_active Expired - Fee Related
-
2014
- 2014-12-11 JP JP2014250947A patent/JP5702886B1/ja not_active Expired - Fee Related
-
2015
- 2015-03-13 JP JP2015050708A patent/JP6031547B2/ja not_active Expired - Fee Related
- 2015-03-19 JP JP2015056324A patent/JP6096233B2/ja not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58122774A (ja) * | 1982-01-14 | 1983-07-21 | Toshiba Corp | 半導体装置及びその製造方法 |
JPH06104431A (ja) * | 1992-09-11 | 1994-04-15 | Hitachi Ltd | 論理回路と、これを用いたラインイメージセンサと、このラインイメージセンサを用いたファクシミリ装置 |
JPH09219493A (ja) * | 1996-02-08 | 1997-08-19 | Hitachi Ltd | 抵抗素子及びこの製造方法並びにそれが集積された半導体装置 |
JP2003050405A (ja) * | 2000-11-15 | 2003-02-21 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタアレイ、その製造方法およびそれを用いた表示パネル |
WO2008096768A1 (ja) * | 2007-02-09 | 2008-08-14 | Idemitsu Kosan Co., Ltd. | 薄膜トランジスタの製造方法、薄膜トランジスタ、薄膜トランジスタ基板及び画像表示装置と、画像表示装置と、半導体デバイス |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013065600A1 (ja) * | 2011-11-02 | 2013-05-10 | シャープ株式会社 | 薄膜トランジスタ、その製造方法、および表示装置 |
JP2017126791A (ja) * | 2012-04-13 | 2017-07-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2015046561A (ja) * | 2012-11-28 | 2015-03-12 | 株式会社半導体エネルギー研究所 | 表示装置 |
US9401432B2 (en) | 2014-01-16 | 2016-07-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
JP2021013038A (ja) * | 2014-11-20 | 2021-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2020127028A (ja) * | 2014-11-20 | 2020-08-20 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JPWO2016079639A1 (ja) * | 2014-11-20 | 2017-11-02 | 株式会社半導体エネルギー研究所 | 半導体装置、回路基板および電子機器 |
JP2022002342A (ja) * | 2014-11-20 | 2022-01-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP7153118B2 (ja) | 2014-11-20 | 2022-10-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2022179588A (ja) * | 2014-11-20 | 2022-12-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP7394942B2 (ja) | 2014-11-20 | 2023-12-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2022095838A (ja) * | 2020-08-20 | 2022-06-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP7292466B2 (ja) | 2020-08-20 | 2023-06-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2013191856A (ja) | 2013-09-26 |
KR101791713B1 (ko) | 2017-10-30 |
WO2011096286A1 (en) | 2011-08-11 |
JP5715432B2 (ja) | 2015-05-07 |
JP6031547B2 (ja) | 2016-11-24 |
US20110193182A1 (en) | 2011-08-11 |
JP2015111742A (ja) | 2015-06-18 |
JP6096233B2 (ja) | 2017-03-15 |
TW201614848A (en) | 2016-04-16 |
JP2013008988A (ja) | 2013-01-10 |
JP2015133513A (ja) | 2015-07-23 |
US8436431B2 (en) | 2013-05-07 |
KR20120112647A (ko) | 2012-10-11 |
JP5702886B1 (ja) | 2015-04-15 |
JP2015073127A (ja) | 2015-04-16 |
JP5675886B2 (ja) | 2015-02-25 |
TWI573276B (zh) | 2017-03-01 |
TWI570919B (zh) | 2017-02-11 |
US20130228776A1 (en) | 2013-09-05 |
TW201143095A (en) | 2011-12-01 |
US8791529B2 (en) | 2014-07-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6031547B2 (ja) | 半導体装置 | |
JP5723621B2 (ja) | 電界効果トランジスタ | |
US7189992B2 (en) | Transistor structures having a transparent channel | |
US20110220878A1 (en) | Thin film transistor and method of manufacturing the same | |
JP2006502597A (ja) | トランジスタ構造及びその製作方法 | |
JP5701015B2 (ja) | 半導体デバイスの駆動方法 | |
KR100540404B1 (ko) | 반도체 장치 | |
TWI301671B (en) | Thin film transistors and displays including the same | |
KR101420967B1 (ko) | 디스플레이 소자의 구동회로에 사용되는 인버터 및 이의 제조 방법 | |
JP2015070114A (ja) | 薄膜半導体装置 | |
KR102103507B1 (ko) | 상온에서 전기적으로만 작동하는 그래핀 스핀 트랜지스터 | |
JP4811638B2 (ja) | 有機半導体装置のしきい値電圧制御方法 | |
JP2007173741A (ja) | P型薄膜トランジスタ、n型薄膜トランジスタ及び半導体装置 | |
JP2004047736A (ja) | 電界効果トランジスタ | |
JP2008139846A (ja) | 発光装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140106 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140106 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20141128 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20141202 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20141212 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150310 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150313 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5715432 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |