JP2011181908A - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP2011181908A
JP2011181908A JP2011017923A JP2011017923A JP2011181908A JP 2011181908 A JP2011181908 A JP 2011181908A JP 2011017923 A JP2011017923 A JP 2011017923A JP 2011017923 A JP2011017923 A JP 2011017923A JP 2011181908 A JP2011181908 A JP 2011181908A
Authority
JP
Japan
Prior art keywords
transistor
electrode
source
insulating layer
electrically connected
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2011017923A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011181908A5 (OSRAM
Inventor
Kiyoshi Kato
清 加藤
Shuhei Nagatsuka
修平 長塚
Hiroki Inoue
広樹 井上
Takanori Matsuzaki
隆徳 松嵜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2011017923A priority Critical patent/JP2011181908A/ja
Publication of JP2011181908A publication Critical patent/JP2011181908A/ja
Publication of JP2011181908A5 publication Critical patent/JP2011181908A5/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/016—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Non-Volatile Memory (AREA)
  • Dram (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2011017923A 2010-02-05 2011-01-31 半導体装置 Withdrawn JP2011181908A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2011017923A JP2011181908A (ja) 2010-02-05 2011-01-31 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010024579 2010-02-05
JP2010024579 2010-02-05
JP2011017923A JP2011181908A (ja) 2010-02-05 2011-01-31 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013121397A Division JP5668100B2 (ja) 2010-02-05 2013-06-10 半導体装置

Publications (2)

Publication Number Publication Date
JP2011181908A true JP2011181908A (ja) 2011-09-15
JP2011181908A5 JP2011181908A5 (OSRAM) 2012-09-13

Family

ID=44355276

Family Applications (14)

Application Number Title Priority Date Filing Date
JP2011017923A Withdrawn JP2011181908A (ja) 2010-02-05 2011-01-31 半導体装置
JP2013121397A Expired - Fee Related JP5668100B2 (ja) 2010-02-05 2013-06-10 半導体装置
JP2014010475A Withdrawn JP2014132663A (ja) 2010-02-05 2014-01-23 半導体装置
JP2014252709A Withdrawn JP2015111678A (ja) 2010-02-05 2014-12-15 半導体装置
JP2016003179A Withdrawn JP2016122845A (ja) 2010-02-05 2016-01-12 半導体装置
JP2017130124A Expired - Fee Related JP6585124B2 (ja) 2010-02-05 2017-07-03 半導体装置の作製方法
JP2019161419A Active JP6792037B2 (ja) 2010-02-05 2019-09-04 半導体装置の作製方法
JP2020185328A Active JP7027506B2 (ja) 2010-02-05 2020-11-05 半導体装置
JP2022022174A Active JP7238181B2 (ja) 2010-02-05 2022-02-16 半導体装置
JP2023030772A Active JP7497481B2 (ja) 2010-02-05 2023-03-01 半導体装置
JP2023119011A Active JP7583125B2 (ja) 2010-02-05 2023-07-21 半導体装置
JP2024086921A Active JP7529934B1 (ja) 2010-02-05 2024-05-29 半導体装置
JP2024119234A Active JP7683098B2 (ja) 2010-02-05 2024-07-25 半導体装置
JP2025081003A Pending JP2025114808A (ja) 2010-02-05 2025-05-14 半導体装置

Family Applications After (13)

Application Number Title Priority Date Filing Date
JP2013121397A Expired - Fee Related JP5668100B2 (ja) 2010-02-05 2013-06-10 半導体装置
JP2014010475A Withdrawn JP2014132663A (ja) 2010-02-05 2014-01-23 半導体装置
JP2014252709A Withdrawn JP2015111678A (ja) 2010-02-05 2014-12-15 半導体装置
JP2016003179A Withdrawn JP2016122845A (ja) 2010-02-05 2016-01-12 半導体装置
JP2017130124A Expired - Fee Related JP6585124B2 (ja) 2010-02-05 2017-07-03 半導体装置の作製方法
JP2019161419A Active JP6792037B2 (ja) 2010-02-05 2019-09-04 半導体装置の作製方法
JP2020185328A Active JP7027506B2 (ja) 2010-02-05 2020-11-05 半導体装置
JP2022022174A Active JP7238181B2 (ja) 2010-02-05 2022-02-16 半導体装置
JP2023030772A Active JP7497481B2 (ja) 2010-02-05 2023-03-01 半導体装置
JP2023119011A Active JP7583125B2 (ja) 2010-02-05 2023-07-21 半導体装置
JP2024086921A Active JP7529934B1 (ja) 2010-02-05 2024-05-29 半導体装置
JP2024119234A Active JP7683098B2 (ja) 2010-02-05 2024-07-25 半導体装置
JP2025081003A Pending JP2025114808A (ja) 2010-02-05 2025-05-14 半導体装置

Country Status (6)

Country Link
US (2) US9190413B2 (OSRAM)
JP (14) JP2011181908A (OSRAM)
KR (1) KR101822962B1 (OSRAM)
CN (1) CN102725842B (OSRAM)
TW (3) TWI587484B (OSRAM)
WO (1) WO2011096270A1 (OSRAM)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013137853A (ja) * 2011-12-02 2013-07-11 Semiconductor Energy Lab Co Ltd 記憶装置および記憶装置の駆動方法
JP2021100127A (ja) * 2011-09-22 2021-07-01 株式会社半導体エネルギー研究所 半導体装置
JP2022068260A (ja) * 2014-09-19 2022-05-09 株式会社半導体エネルギー研究所 半導体装置
WO2024194726A1 (ja) * 2023-03-17 2024-09-26 株式会社半導体エネルギー研究所 半導体装置、及び、半導体装置の作製方法

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101913111B1 (ko) 2009-12-18 2018-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011096277A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
CN102725842B (zh) * 2010-02-05 2014-12-03 株式会社半导体能源研究所 半导体器件
WO2011096264A1 (en) * 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device
CN102742001B (zh) 2010-02-05 2017-03-22 株式会社半导体能源研究所 半导体装置
WO2011114867A1 (en) 2010-03-19 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method of semiconductor device
KR101884031B1 (ko) 2010-04-07 2018-07-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
WO2011135999A1 (en) 2010-04-27 2011-11-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US8416622B2 (en) 2010-05-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Driving method of a semiconductor device with an inverted period having a negative potential applied to a gate of an oxide semiconductor transistor
US8779433B2 (en) 2010-06-04 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI524347B (zh) 2010-08-06 2016-03-01 半導體能源研究所股份有限公司 半導體裝置及其驅動方法
US8422272B2 (en) 2010-08-06 2013-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
JP5727892B2 (ja) 2010-08-26 2015-06-03 株式会社半導体エネルギー研究所 半導体装置
JP5898527B2 (ja) * 2011-03-04 2016-04-06 株式会社半導体エネルギー研究所 半導体装置
JP6013682B2 (ja) 2011-05-20 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の駆動方法
US9658278B2 (en) * 2014-01-24 2017-05-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for high voltage device crystal defect detection
US9935143B2 (en) * 2015-09-30 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
TWI694580B (zh) * 2016-11-18 2020-05-21 聯華電子股份有限公司 電晶體堆疊結構
WO2018130930A1 (en) * 2017-01-16 2018-07-19 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2020145233A (ja) * 2019-03-04 2020-09-10 キオクシア株式会社 半導体装置およびその製造方法
JP2022190984A (ja) * 2021-06-15 2022-12-27 キオクシア株式会社 半導体装置およびその製造方法
CN116209249B (zh) * 2022-08-08 2024-02-20 北京超弦存储器研究院 动态存储器、其制作方法、读取方法及存储装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08330445A (ja) * 1995-05-17 1996-12-13 Hyundai Electron Ind Co Ltd 半導体メモリ装置及びその製造方法
JP2001044297A (ja) * 1999-07-29 2001-02-16 Sony Corp 半導体装置
JP2002368226A (ja) * 2001-06-11 2002-12-20 Sharp Corp 半導体装置、半導体記憶装置及びその製造方法、並びに携帯情報機器
JP2007103918A (ja) * 2005-09-06 2007-04-19 Canon Inc アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタ、アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタの製造方法及びアモルファス酸化物膜の製造方法
JP2009135350A (ja) * 2007-12-03 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2009164393A (ja) * 2008-01-08 2009-07-23 Canon Inc アモルファス酸化物及び電界効果型トランジスタ

Family Cites Families (193)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683886A (en) * 1979-12-11 1981-07-08 Toshiba Corp Semiconductor storage device
EP0053878B1 (en) * 1980-12-08 1985-08-14 Kabushiki Kaisha Toshiba Semiconductor memory device
JPS6034199B2 (ja) 1980-12-20 1985-08-07 株式会社東芝 半導体記憶装置
JPS60130160A (ja) 1983-12-19 1985-07-11 Hitachi Ltd 半導体記憶装置
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPS62128091A (ja) 1985-11-28 1987-06-10 Nec Corp 半導体メモリセル
JPS62274773A (ja) 1986-05-23 1987-11-28 Hitachi Ltd 半導体記憶装置
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63268184A (ja) * 1987-04-24 1988-11-04 Sony Corp 半導体メモリ装置
JPH0254572A (ja) 1988-08-18 1990-02-23 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2918307B2 (ja) * 1990-08-07 1999-07-12 沖電気工業株式会社 半導体記憶素子
US5041884A (en) 1990-10-11 1991-08-20 Mitsubishi Denki Kabushiki Kaisha Multilayer semiconductor integrated circuit
JP3109537B2 (ja) 1991-07-12 2000-11-20 日本電気株式会社 読み出し専用半導体記憶装置
JP2775040B2 (ja) 1991-10-29 1998-07-09 株式会社 半導体エネルギー研究所 電気光学表示装置およびその駆動方法
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JPH0799251A (ja) * 1992-12-10 1995-04-11 Sony Corp 半導体メモリセル
JP3403231B2 (ja) 1993-05-12 2003-05-06 三菱電機株式会社 半導体装置およびその製造方法
JP2783271B2 (ja) 1995-01-30 1998-08-06 日本電気株式会社 半導体記憶装置
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
KR100394896B1 (ko) 1995-08-03 2003-11-28 코닌클리케 필립스 일렉트로닉스 엔.브이. 투명스위칭소자를포함하는반도체장치
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
KR100215866B1 (ko) * 1996-04-12 1999-08-16 구본준 커패시터가 없는 디램 및 그의 제조방법
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
US7800199B2 (en) * 2003-06-24 2010-09-21 Oh Choonsik Semiconductor circuit
US5714394A (en) * 1996-11-07 1998-02-03 Advanced Micro Devices, Inc. Method of making an ultra high density NAND gate using a stacked transistor arrangement
JPH1140772A (ja) 1997-07-22 1999-02-12 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3445495B2 (ja) * 1997-07-23 2003-09-08 株式会社東芝 半導体装置
JP4538693B2 (ja) 1998-01-26 2010-09-08 ソニー株式会社 メモリ素子およびその製造方法
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
JP2001093988A (ja) 1999-07-22 2001-04-06 Sony Corp 半導体記憶装置
JP2001053164A (ja) 1999-08-04 2001-02-23 Sony Corp 半導体記憶装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
JP3749101B2 (ja) 2000-09-14 2006-02-22 株式会社ルネサステクノロジ 半導体装置
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP2003068883A (ja) 2001-08-24 2003-03-07 Hitachi Ltd 半導体記憶装置
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
EP1443130B1 (en) 2001-11-05 2011-09-28 Japan Science and Technology Agency Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
CN1445821A (zh) 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7189992B2 (en) 2002-05-21 2007-03-13 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures having a transparent channel
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
US6787835B2 (en) 2002-06-11 2004-09-07 Hitachi, Ltd. Semiconductor memories
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US20070194379A1 (en) 2004-03-12 2007-08-23 Japan Science And Technology Agency Amorphous Oxide And Thin Film Transistor
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
CN102176237B (zh) 2004-04-09 2015-09-30 株式会社半导体能源研究所 限幅器以及采用限幅器的半导体器件
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
JP5126730B2 (ja) * 2004-11-10 2013-01-23 キヤノン株式会社 電界効果型トランジスタの製造方法
AU2005302963B2 (en) 2004-11-10 2009-07-02 Cannon Kabushiki Kaisha Light-emitting device
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
EP1815530B1 (en) 2004-11-10 2021-02-17 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
EP2453480A2 (en) 2004-11-10 2012-05-16 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI481024B (zh) 2005-01-28 2015-04-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI412138B (zh) 2005-01-28 2013-10-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007042172A (ja) * 2005-08-01 2007-02-15 Sony Corp 半導体メモリ装置
JP2007053321A (ja) 2005-08-19 2007-03-01 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
EP3614442A3 (en) 2005-09-29 2020-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufactoring method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
CN101667544B (zh) 2005-11-15 2012-09-05 株式会社半导体能源研究所 半导体器件及其制造方法
JP5099740B2 (ja) 2005-12-19 2012-12-19 財団法人高知県産業振興センター 薄膜トランジスタ
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
US7760552B2 (en) 2006-03-31 2010-07-20 Semiconductor Energy Laboratory Co., Ltd. Verification method for nonvolatile semiconductor memory device
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
JP2007286150A (ja) * 2006-04-13 2007-11-01 Idemitsu Kosan Co Ltd 電気光学装置、並びに、電流制御用ｔｆｔ基板及びその製造方法
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP2007311404A (ja) * 2006-05-16 2007-11-29 Fuji Electric Holdings Co Ltd 薄膜トランジスタの製造方法
WO2007142167A1 (en) 2006-06-02 2007-12-13 Kochi Industrial Promotion Center Semiconductor device including an oxide semiconductor thin film layer of zinc oxide and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
US7742351B2 (en) 2006-06-30 2010-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
KR100806339B1 (ko) * 2006-10-11 2008-02-27 삼성전자주식회사 3차원적으로 배열된 메모리 셀들을 구비하는 낸드 플래시메모리 장치 및 그 제조 방법
KR100829570B1 (ko) 2006-10-20 2008-05-14 삼성전자주식회사 크로스 포인트 메모리용 박막 트랜지스터 및 그 제조 방법
JP2008108985A (ja) 2006-10-26 2008-05-08 Kochi Prefecture Sangyo Shinko Center 半導体素子の製法
JP2008117739A (ja) 2006-11-02 2008-05-22 Adorinkusu:Kk プリント基板用の信号中継具
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
WO2008099863A1 (ja) * 2007-02-16 2008-08-21 Idemitsu Kosan Co., Ltd. 半導体，半導体装置及び相補型トランジスタ回路装置
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
JP5466939B2 (ja) 2007-03-23 2014-04-09 出光興産株式会社 半導体デバイス、多結晶半導体薄膜、多結晶半導体薄膜の製造方法、電界効果型トランジスタ、及び、電界効果型トランジスタの製造方法
JP5286826B2 (ja) * 2007-03-28 2013-09-11 凸版印刷株式会社 薄膜トランジスタアレイ、薄膜トランジスタアレイの製造方法、およびアクティブマトリスクディスプレイ
JP5197058B2 (ja) * 2007-04-09 2013-05-15 キヤノン株式会社 発光装置とその作製方法
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
US8274078B2 (en) 2007-04-25 2012-09-25 Canon Kabushiki Kaisha Metal oxynitride semiconductor containing zinc
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
ATE490560T1 (de) 2007-05-31 2010-12-15 Canon Kk Verfahren zur herstellung eines dünnschichttransistors mit einem oxidhalbleiter
US8354674B2 (en) 2007-06-29 2013-01-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device wherein a property of a first semiconductor layer is different from a property of a second semiconductor layer
JP2009016368A (ja) * 2007-06-29 2009-01-22 Ricoh Co Ltd メモリーデバイス
US8232598B2 (en) * 2007-09-20 2012-07-31 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
US7982250B2 (en) * 2007-09-21 2011-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7982216B2 (en) * 2007-11-15 2011-07-19 Fujifilm Corporation Thin film field effect transistor with amorphous oxide active layer and display using the same
JP5366517B2 (ja) 2007-12-03 2013-12-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
US8461583B2 (en) 2007-12-25 2013-06-11 Idemitsu Kosan Co., Ltd. Oxide semiconductor field effect transistor and method for manufacturing the same
KR20090069806A (ko) * 2007-12-26 2009-07-01 삼성전자주식회사 표시 기판, 이를 포함하는 표시 장치 및 표시 기판의 제조방법
JP5063337B2 (ja) 2007-12-27 2012-10-31 株式会社日立製作所 半導体装置
JP5121478B2 (ja) 2008-01-31 2013-01-16 株式会社ジャパンディスプレイウェスト 光センサー素子、撮像装置、電子機器、およびメモリー素子
JP5325446B2 (ja) * 2008-04-16 2013-10-23 株式会社日立製作所 半導体装置及びその製造方法
JP5202094B2 (ja) 2008-05-12 2013-06-05 キヤノン株式会社 半導体装置
JP5305731B2 (ja) 2008-05-12 2013-10-02 キヤノン株式会社 半導体素子の閾値電圧の制御方法
KR101496148B1 (ko) 2008-05-15 2015-02-27 삼성전자주식회사 반도체소자 및 그 제조방법
JP2010003910A (ja) 2008-06-20 2010-01-07 Toshiba Mobile Display Co Ltd 表示素子
US8822995B2 (en) * 2008-07-24 2014-09-02 Samsung Display Co., Ltd. Display substrate and method of manufacturing the same
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JP5781720B2 (ja) 2008-12-15 2015-09-24 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US20100213458A1 (en) 2009-02-23 2010-08-26 Micron Technology, Inc. Rigid semiconductor memory having amorphous metal oxide semiconductor channels
KR102321812B1 (ko) 2009-10-29 2021-11-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101861980B1 (ko) 2009-11-06 2018-05-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101928723B1 (ko) 2009-11-20 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101823861B1 (ko) 2009-11-20 2018-01-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
WO2011065183A1 (en) 2009-11-24 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including memory cell
KR101911382B1 (ko) 2009-11-27 2018-10-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101720072B1 (ko) 2009-12-11 2017-03-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 래치 회로와 논리 회로, 및 이를 사용한 반도체 장치
KR101913111B1 (ko) 2009-12-18 2018-10-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011074408A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Non-volatile latch circuit and logic circuit, and semiconductor device using the same
KR101870119B1 (ko) 2009-12-25 2018-06-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102656690B (zh) 2009-12-25 2016-04-20 株式会社半导体能源研究所 半导体装置
KR102480794B1 (ko) 2009-12-28 2022-12-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치와 반도체 장치
KR101760537B1 (ko) 2009-12-28 2017-07-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101842413B1 (ko) 2009-12-28 2018-03-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011086812A1 (en) 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101848516B1 (ko) 2010-01-15 2018-04-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101798367B1 (ko) 2010-01-15 2017-11-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011086871A1 (en) 2010-01-15 2011-07-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
EP2526622B1 (en) 2010-01-20 2015-09-23 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
US8415731B2 (en) 2010-01-20 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor storage device with integrated capacitor and having transistor overlapping sections
KR102248998B1 (ko) 2010-01-20 2021-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전자 기기
WO2011089835A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
CN102714209B (zh) 2010-01-22 2015-09-16 株式会社半导体能源研究所 半导体存储器件及其驱动方法
KR101948707B1 (ko) 2010-01-29 2019-02-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 기억 장치
CN102725842B (zh) * 2010-02-05 2014-12-03 株式会社半导体能源研究所 半导体器件
CN102742001B (zh) 2010-02-05 2017-03-22 株式会社半导体能源研究所 半导体装置
WO2011096277A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of driving semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08330445A (ja) * 1995-05-17 1996-12-13 Hyundai Electron Ind Co Ltd 半導体メモリ装置及びその製造方法
JP2001044297A (ja) * 1999-07-29 2001-02-16 Sony Corp 半導体装置
JP2002368226A (ja) * 2001-06-11 2002-12-20 Sharp Corp 半導体装置、半導体記憶装置及びその製造方法、並びに携帯情報機器
JP2007103918A (ja) * 2005-09-06 2007-04-19 Canon Inc アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタ、アモルファス酸化物膜をチャネル層に用いた電界効果型トランジスタの製造方法及びアモルファス酸化物膜の製造方法
JP2009135350A (ja) * 2007-12-03 2009-06-18 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2009164393A (ja) * 2008-01-08 2009-07-23 Canon Inc アモルファス酸化物及び電界効果型トランジスタ

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021100127A (ja) * 2011-09-22 2021-07-01 株式会社半導体エネルギー研究所 半導体装置
JP7038238B2 (ja) 2011-09-22 2022-03-17 株式会社半導体エネルギー研究所 半導体装置
JP2022066445A (ja) * 2011-09-22 2022-04-28 株式会社半導体エネルギー研究所 半導体装置
JP7285352B2 (ja) 2011-09-22 2023-06-01 株式会社半導体エネルギー研究所 半導体装置
JP2023104977A (ja) * 2011-09-22 2023-07-28 株式会社半導体エネルギー研究所 半導体装置
JP7531021B2 (ja) 2011-09-22 2024-08-08 株式会社半導体エネルギー研究所 半導体装置
JP2013137853A (ja) * 2011-12-02 2013-07-11 Semiconductor Energy Lab Co Ltd 記憶装置および記憶装置の駆動方法
JP2022068260A (ja) * 2014-09-19 2022-05-09 株式会社半導体エネルギー研究所 半導体装置
JP7286826B2 (ja) 2014-09-19 2023-06-05 株式会社半導体エネルギー研究所 半導体装置
WO2024194726A1 (ja) * 2023-03-17 2024-09-26 株式会社半導体エネルギー研究所 半導体装置、及び、半導体装置の作製方法

Also Published As

Publication number Publication date
JP2015111678A (ja) 2015-06-18
CN102725842B (zh) 2014-12-03
JP6585124B2 (ja) 2019-10-02
JP7238181B2 (ja) 2023-03-13
KR101822962B1 (ko) 2018-01-31
JP7529934B1 (ja) 2024-08-06
TWI587484B (zh) 2017-06-11
JP7683098B2 (ja) 2025-05-26
JP7497481B2 (ja) 2024-06-10
JP2024109910A (ja) 2024-08-14
JP2017216460A (ja) 2017-12-07
JP2014132663A (ja) 2014-07-17
JP2016122845A (ja) 2016-07-07
JP2023139159A (ja) 2023-10-03
US9793276B2 (en) 2017-10-17
JP2025114808A (ja) 2025-08-05
JP7583125B2 (ja) 2024-11-13
TW201735322A (zh) 2017-10-01
US20160064383A1 (en) 2016-03-03
JP2023071834A (ja) 2023-05-23
JP2024150673A (ja) 2024-10-23
US9190413B2 (en) 2015-11-17
JP2013239713A (ja) 2013-11-28
TW201626544A (zh) 2016-07-16
WO2011096270A1 (en) 2011-08-11
KR20120112859A (ko) 2012-10-11
JP7027506B2 (ja) 2022-03-01
JP2021040147A (ja) 2021-03-11
JP5668100B2 (ja) 2015-02-12
JP6792037B2 (ja) 2020-11-25
TWI609479B (zh) 2017-12-21
JP2020017743A (ja) 2020-01-30
TWI539579B (zh) 2016-06-21
US20110198593A1 (en) 2011-08-18
CN102725842A (zh) 2012-10-10
TW201143030A (en) 2011-12-01
JP2022062256A (ja) 2022-04-19

Similar Documents

Publication Publication Date Title
JP7529934B1 (ja) 半導体装置
JP6577629B2 (ja) 半導体装置
JP5604290B2 (ja) 半導体装置
JP6007265B2 (ja) 半導体装置
JP5919366B2 (ja) 半導体装置
JP5676323B2 (ja) 半導体装置
JP5604291B2 (ja) 半導体装置
JP5731283B2 (ja) 半導体装置
JP5647537B2 (ja) 半導体装置の作製方法
JP5736196B2 (ja) 半導体装置
JP5767880B2 (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120726

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120726

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20120726

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20120828

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120911

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120924

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121225

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130416

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130610

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20130617

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20130830

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20131217