JP2011124235A - 光学装置 - Google Patents
光学装置 Download PDFInfo
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- JP2011124235A JP2011124235A JP2010282042A JP2010282042A JP2011124235A JP 2011124235 A JP2011124235 A JP 2011124235A JP 2010282042 A JP2010282042 A JP 2010282042A JP 2010282042 A JP2010282042 A JP 2010282042A JP 2011124235 A JP2011124235 A JP 2011124235A
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- charge transport
- layer
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- transport layer
- electrode
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- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000003381 solubilizing effect Effects 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 125000004001 thioalkyl group Chemical group 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Abstract
【解決手段】次の工程を含む有機発光ダイオードを形成する方法であって、第1のタイプの電荷輸送体を注入する第1の電極を含む基板を提供する工程、第1のタイプの電荷輸送体を輸送するための電荷輸送材料を基板上に蒸着することによって電荷輸送層を形成する工程、ここで、電荷輸送材料は溶媒に溶解性であり、前記電荷輸送層を溶媒中に不溶性に変える工程、前記電荷輸送層上に、溶媒、燐光性材料及びホスト材料を含む組成物を蒸着することによって電子発光層を形成する工程、及び前記電子発光層上に、第2のタイプの電荷輸送体の注入のための第2の電極を蒸着する工程を含む方法。
【選択図】図1
Description
1)第1のタイプの電荷輸送体を注入する第1の電極を含む基板を提供する
2)第1のタイプの電荷輸送体を輸送するための電荷輸送材料を基板上に堆積することによって電荷輸送層を形成する。ここで、電荷輸送材料は溶媒に溶解性である
3)前記電荷輸送層を溶媒中に不溶性に変える
4)前記電荷輸送層上に、溶媒、燐光性材料及びホスト材料を含む組成物を堆積することによって電子発光層を形成する
5)前記電子発光層上に、第2のタイプの電荷輸送体の注入のための第2の電極を堆積する
好ましくは、Ar1はフェニレンである。
1)第1のタイプの電荷輸送体の注入のための第1の電極を含む基板を供給する
2)第1のタイプの電荷輸送体の輸送のための電荷輸送材料を基板上に堆積し、前記電荷輸送材料は溶媒に可溶性である
3)溶媒、燐光性材料及びホスト材料を含む組成物を電荷輸送層上に堆積することにより電子発光層を形成し、及び
4)第2のタイプの電荷輸送体の注入のための第2の電極を電子発光層上に蒸着する
1)第1のタイプの電荷輸送体の注入のための第1の電極を含む基板を供給する
2)溶媒、燐光性材料、ホスト材料及び第1のタイプの電荷輸送体の輸送のための電荷輸送材料を含む組成物を基板上に堆積する
3)電荷輸送材料が第1電極に向かって移動するように、溶媒の蒸発の間、前記組成物を相分離させる
4)第2のタイプの電荷輸送体の注入のための第2の電極を電子発光層上に堆積する
適切な重金属Mとしては、
1)セリウム、サマリウム、ユーロピウム、テルビウム、ジスプロシウム、ツリウム、エルビウム及びネオジムなどのランタニド金属、及び
2)d−ブロック金属、特に2列及び3列のもの、すなわち、元素番号39〜48及び72〜80、特に、ルテニウム、ロジウム、パラジウム、レニウム、オスミウム、イリジウム、プラチナ及び金
d−ブロック元素との使用に適する他のリガンドにはジケトネート、特に、アセチルアセトネート(acac)、それぞれ置換されていてよいトリアリールホスフィン、及びピリジンが含まれる。
1)第1層は、アノードと第2層の間に位置するとき正孔輸送、電子遮断及び/又は励起遮断層として働く
2)PEDT/PSS層として使用される場合、不溶性正孔輸送層が酸性のPSS材料から第2層へのプロトンの侵入を防止する。これは、特に、ポリマーが、プロトンを受領することができる一般式1−6のアミン、又はピリジルのような上記Het基のような基本単位を含むときに適用される
1)PEDT/PSS(Baytron P登録商標として、H C Starck of Leverkusen, Germanyより入手可)をガラス基板に支持されたインジウム錫酸化物(Applied Films, Colorado,USAより入手可)上にスピンコートにより堆積する
2)濃度2%w/vを有するキシレン溶液からF8-TFBをスピンコートすることにより、正孔輸送層を堆積する
3)正孔輸送層を不活性(窒素)雰囲気中で加熱する
4)残存する可溶性F8-TFBを除去するために基板をキシレン中で選択的にスピン洗浄する
5)キシレン溶液からスピンコートにより電子発光層を堆積する
6)国際公開00/48258号に開示されるように、電子発光層上にフッ化リチウムの第1層(4nm)、第2層カルシウム(10nm)及びアルミニウムキャップ層(>200nM)を含むカソードを堆積する
7)Saes Getters SpAから入手可能な気密性金属封入物を使用して装置を封止する
上記の一般的手順は、次のものを含む電子発光装置を使用して遂行される。
1)国際公開02/92723に開示される70%の9,9−ジオクチルフルオレン−2,7−ジイル、10%の9,9−ジフェニルフルオレン−2,7−ジイル、10%の“TFB”繰返し単位及び“PFB”繰返し単位(TFB及びPFB繰返し単位は下記に例示される)の組成を有するホストホリマー。ポリマーは、例えば、国際公開00/53656号に開示されるように、スズキ重合によって製造される
2)Nature (London), 1998, 395, 151に開示される赤色燐光性ドープ剤プラチナオクタエチルポルフィン(PtOEP)
ホスト材料:ドープ剤の比98.8:1.2
比較の目的のため、正孔輸送層(すなわち、上記一般的方法の2−4の工程)が省略された点を除いて、実施例1にしたがって装置が作製された。
ホスト材料対ドープ剤が98.0:2.0である点を除いて実施例1にしたがって装置が作製された。
比較の目的のため、正孔輸送層(すなわち、上記一般的方法の2−4の工程)が省略された点を除いて、実施例2にしたがって装置が作製された。
電子発光層が、国際公開02/066552に開示され下記に例示されるホスト材料CBP及び緑色電子発光デンドリマードープ剤ED1がCBP:ED1比が8:2であるクロロホルム溶液からスピンコートにより堆積される点を除いて実施例1にしたがって装置が作製された。
比較の目的のため、正孔輸送層(すなわち、上記一般的方法の2−4の工程)が省略された点を除いて、実施例3にしたがって装置が作製された。
2 インジウム錫酸化物のアノード
3 有機正孔注入層
4 不溶性正孔輸送層
5 電子発光層
6 カソード
Claims (11)
- 次の工程を含む有機発光ダイオードを形成する方法であって、
第1のタイプの電荷輸送体を注入する第1の電極を含む基板を提供する工程、
第1のタイプの電荷輸送体を輸送するための電荷輸送材料を基板上に堆積することによって電荷輸送層を形成する工程、ここで、電荷輸送材料は第1の溶媒に溶解性であり、
前記電荷輸送層を前記第1の溶媒中に不溶性に変える工程、
前記電荷輸送層上に、前記第1の溶媒、燐光性材料及びホストポリマーを含む組成物を堆積することによって電子発光層を形成する工程、及び
前記電子発光層上に、第2のタイプの電荷輸送体の注入のための第2の電極を蒸着する工程
を含む方法。 - 前記第1の電極はアノードであり、前記第2の電極はカソードであり、前記第1の電荷輸送体は正孔であり、前記第2の電荷輸送体は電子である請求項1に記載の方法。
- 前記電荷輸送材料は架橋性材料を含み、前記処理は、前記電荷輸送材料を架橋するために前記電荷輸送層を加熱、電子マグネトロン照射、UV照射することを含む請求項1又は2に記載の方法。
- 前記電荷輸送層が実質的に架橋性基を有せず、前記処理は前記電荷輸送層を加熱することを含む請求項1又は2に記載の方法。
- 前記電荷輸送層はポリマーである請求項1ないし4のいずれかに記載の方法。
- 前記ポリマーは選択的に置換されるトリアリールアミン繰返し単位を含む請求項5に記載の方法。
- 前記コポリマーは選択的に置換されるフルオレン、インデノフルオレン、スピロフルオレン及びフェニレンから選択される繰返し単位を含む請求項5ないし7のいずれかに記載の方法。
- 前記燐光性材料は金属錯体である請求項1ないし8のいずれかに記載の方法。
- 前記ホストポリマーは、請求項7又は8で定義される繰返し単位を含む請求項1に記載の方法。
- 請求項1ないし10のいずれかに記載の方法によって得られる有機発光ダイオード。
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AT (1) | ATE511221T1 (ja) |
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2004
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JP2014078381A (ja) * | 2012-10-10 | 2014-05-01 | Konica Minolta Inc | 白色エレクトロルミネッセンスデバイス及び白色エレクトロルミネッセンスデバイスの製造方法 |
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JP2019077685A (ja) * | 2017-10-26 | 2019-05-23 | エルジー ディスプレイ カンパニー リミテッド | 有機化合物、これを含む発光ダイオードおよび発光装置 |
JP2020196721A (ja) * | 2017-10-26 | 2020-12-10 | エルジー ディスプレイ カンパニー リミテッド | 有機化合物、これを含む発光ダイオードおよび発光装置 |
JP7088991B2 (ja) | 2017-10-26 | 2022-06-21 | エルジー ディスプレイ カンパニー リミテッド | 有機化合物、これを含む発光ダイオードおよび発光装置 |
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US20150188069A1 (en) | 2015-07-02 |
HK1095663A1 (en) | 2007-05-11 |
US20090174311A1 (en) | 2009-07-09 |
ATE511221T1 (de) | 2011-06-15 |
EP1695395A2 (en) | 2006-08-30 |
US8974917B2 (en) | 2015-03-10 |
JP2013122928A (ja) | 2013-06-20 |
JP5981961B2 (ja) | 2016-08-31 |
JP6203319B2 (ja) | 2017-09-27 |
JP2014212126A (ja) | 2014-11-13 |
GB0329364D0 (en) | 2004-01-21 |
EP1695395B1 (en) | 2011-05-25 |
WO2005059951A3 (en) | 2005-08-11 |
US9660212B2 (en) | 2017-05-23 |
WO2005059951A2 (en) | 2005-06-30 |
JP2016149371A (ja) | 2016-08-18 |
JP2007520858A (ja) | 2007-07-26 |
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