JP2010521587A - 微細ピッチのマイクロ接点及びその成形方法 - Google Patents
微細ピッチのマイクロ接点及びその成形方法 Download PDFInfo
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- JP2010521587A JP2010521587A JP2009553652A JP2009553652A JP2010521587A JP 2010521587 A JP2010521587 A JP 2010521587A JP 2009553652 A JP2009553652 A JP 2009553652A JP 2009553652 A JP2009553652 A JP 2009553652A JP 2010521587 A JP2010521587 A JP 2010521587A
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- microcontact
- substrate
- resistant material
- etch
- microcontacts
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Abstract
Description
本願は、2007年3月13日に出願された米国特許出願第11/717,587号に対する優先権を主張する。この特許出願は、2005年6月24日に出願された米国特許出願第11/166,982号の一部継続出願であり、2004年6月25日に出願された米国仮特許出願第60/583,109号の出願日に関する利点を請求する。特許出願第11/166,982号はまた、2004年10月6日に出願された米国特許出願第10/959,465号の一部継続出願である。この特許出願第10/959,465号も、2003年10月6日に出願された米国仮特許出願第60/508,970号、2003年12月30日に出願された60/533,210号、2003年12月30日に出願された60/533,393号、及び2003年12月30日に出願された60/533,437号の出願日に関する利点を請求する。前述された特許出願の全開示内容は、参照することによって本願に組み込まれる。
本発明は、超小型電子パッケージ、超小型電子パッケージを製造する場合に使用する部品、及びこのパッケージや部品を製作する方法に関する。
Claims (37)
- マイクロ接点を形成する方法であって、
(a)基板の上面の選択された位置に第1の耐エッチング性材料を与えるステップと、
(b)前記第1の耐エッチング性材料によってカバーされない位置で前記基板の上面をエッチングするステップであって、これにより、前記基板の選択された位置から上方に突出する第1のマイクロ接点部分を形成する、ステップと、
(c)前記第1のマイクロ接点部分上に第2の耐エッチング性材料を与えるステップと、
(d)前記第1のマイクロ接点部分の下に第2のマイクロ接点部分を形成するために前記基板をさらにエッチングするステップとを含み、前記第2の耐エッチング性材料によって、前記さらにエッチングするステップの間に、前記第1のマイクロ接点部分が少なくとも部分的にエッチングされないようにする、方法。 - 前記上面をエッチングするステップは、前記第1の耐エッチング性材料が前記第1のマイクロ接点部分から横方向に突き出るように実行される、ことを特徴とする請求項1に記載の方法。
- 前記第2の耐エッチング性材料を与えるステップが、前記第2の耐エッチング性材料を堆積するステップと、堆積された材料を放射に露光するステップとを含む、ことを特徴とする請求項1に記載の方法。
- 前記堆積された材料を放射に露光するステップの間に、前記横方向に突出した第1の耐エッチング性材料は、前記堆積された第2の耐エッチング性材料の部分を前記放射から保護する、ことを特徴とする請求項3に記載の方法。
- 前記第1及び第2の耐エッチング性材料を取り除くステップをさらに含む、ことを特徴とする請求項1に記載の方法。
- 前記選択された位置に第1の耐エッチング性材料を与えるステップが、前記基板の上面に前記第1の耐エッチング性材料を堆積するステップを含み、前記露光するステップが前記第1の耐エッチング性材料の上にマスクを配置するステップを含む、ことを特徴とする請求項1に記載の方法。
- 前記第1の耐エッチング性材料及び前記マスクが放射に露光される、ことを特徴とする請求項6に記載の方法。
- 第3のマイクロ接点部分を形成するステップをさらに含む、ことを特徴とする請求項1に記載の方法。
- 前記第1及び第2の耐エッチング性材料が金である、ことを特徴とする請求項1に記載の方法。
- 前記第1及び第2の耐エッチング性材料がフォトレジストである、ことを特徴とする請求項1に記載の方法。
- マイクロ接点を形成する方法であって、
(a)最後の耐エッチング性材料が、基板と一体化され前記基板の表面から上方に突出している第1のマイクロ接点部分を少なくとも部分的にカバーするように、最後の耐エッチング性材料を製造過程中の基板に加えるステップと、
(b)前記第1のマイクロ接点部分の下側において前記第1のマイクロ接点部分と一体化された第2のマイクロ接点部分を残すように、前記基板の表面をエッチングするステップとを含み、前記最後の耐エッチング性材料は、さらなるエッチング・ステップの間に、前記第1のマイクロ接点部分がエッチングされないように少なくとも部分的に保護する、方法。 - (c)予備の耐エッチング性材料を前記基板の上面の選択された位置に与えるステップと、
(d)前記予備の耐エッチング性材料にカバーされない前記基板の部分を取り除いて、これにより、エッチングされた基板から上方に突出する前記第1のマイクロ接点部分を残すように、前記基板の前記上面をエッチングするステップと、
によって前記製造過程中の基板を形成するステップをさらに含む、ことを特徴とする請求項11に記載の方法。 - 前記予備の耐エッチング性材料を選択された位置に与えるステップが、予備の耐エッチング性材料を前記上面の全体に与えるステップと、前記予備の耐エッチング性材料を放射に露光するために、予備の耐エッチング性材料の上にマスクを与えるステップとを含む、ことを特徴とする請求項12に記載の方法。
- 前記第1のマイクロ接点部分が垂直に延びる側壁を有し、前記最後の耐エッチング性材料が前記第1のマイクロ接点部分の側壁を少なくとも部分的にカバーする、ことを特徴とする請求項11に記載の方法。
- 前記予備の及び前記最後の耐エッチング性材料を取り除くステップをさらに含む、ことを特徴とする請求項11に記載の方法。
- (a)基板と、
(b)前記基板から垂直方向に突出する複数のマイクロ接点とを備えて、前記各マイクロ接点が前記基板に隣接するベース領域と前記基板から離れた先端部領域を含み、前記各マイクロ接点が前記ベース領域の垂直位置の第1の関数であると共に前記先端部領域の垂直位置の第2の関数である横方向の寸法を有している、超小型電子ユニット。 - 前記第1及び第2の関数が実質的に異なっている、ことを特徴とする請求項16に記載の超小型電子ユニット。
- 垂直位置に対する横方向寸法の傾斜は、前記ベース領域と先端部領域との間の境界で急激に変化する、ことを特徴とする請求項16に記載の超小型電子ユニット。
- 複数のマイクロ接点のそれぞれが、縦軸と第1及び第2の縦軸間の距離によって定義されるピッチとを有し、前記ピッチが約200ミクロン未満である、ことを特徴とする請求項16に記載の超小型電子ユニット。
- 前記ピッチが約150ミクロン未満である、ことを特徴とする請求項19に記載の超小型電子ユニット。
- 前記ベース領域と前記先端部領域との間に別の領域が存在する、ことを特徴とする請求項16に記載の超小型電子ユニット。
- 前記マイクロ接点のそれぞれの中で、前記ベース領域と前記先端部領域が金属の一体のボディとして形成される、ことを特徴とする請求項16に記載の超小型電子ユニット。
- 前記基板が誘電体層と前記誘電体層に沿って延びるトレースを備えて、少なくとも幾つかのトレースが前記少なくとも幾つかのマイクロ接点に接続される、ことを特徴とする請求項16に記載の超小型電子ユニット。
- 基板と
前記基板から垂直方向に突出する複数のマイクロ接点とを備えて、2つの隣接するマイクロ接点間のピッチが150ミクロン未満である、超小型電子ユニット。 - 前記ピッチがh+dよりも小さく、hが前記各マイクロ接点の垂直方向の高さであり、dが前記基板から離れた前記マイクロ接点の先端部における各マイクロ接点の直径である、ことを特徴とする請求項24に記載の超小型電子ユニット。
- 前記各マイクロ接点の高さが少なくとも約50ミクロンであり、前記各マイクロ接点の先端部の直径が少なくとも約20ミクロンである、ことを特徴とする請求項24に記載の超小型電子ユニット。
- 前記各マイクロ接点がほぼ平坦で水平な面の先端部を有する、ことを特徴とする請求項24に記載の超小型電子ユニット。
- (a)基板と、
(b)前記基板から垂直方向に突出する複数の細長いマイクロ接点を備えて、前記それぞれのマイクロ接点が前記基板に隣接したベース領域と前記基板から離れた先端部領域を含み、前記それぞれのマイクロ接点が軸線と、前記軸線に沿って垂直方向に前記軸線に向かって又は前記軸線から離れるように傾斜する円周方向の面とを有して、円周方向の壁の傾斜が前記先端部領域と前記ベース領域との間の境界において急に変化する、超小型電子ユニット。 - 前記マイクロ接点のそれぞれの中で、前記ベース領域と前記先端部領域が金属の一体のボディとして形成される、ことを特徴とする請求項28に記載の超小型電子ユニット。
- 隣接するマイクロ接点間のピッチが約150ミクロン未満であり、前記各マイクロ接点の高さが約60から約150ミクロンである、ことを特徴とする請求項28に記載の超小型電子ユニット。
- 前記各マイクロ接点の先端部の直径が少なくとも約20ミクロンである、ことを特徴とする請求項30に記載の超小型電子ユニット。
- 前記ピッチがh+dよりも小さく、hが前記各マイクロ接点の垂直方向の高さであり、dが前記基板から離れた前記マイクロ接点の先端部における各マイクロ接点の直径である、ことを特徴とする請求項28に記載の超小型電子ユニット。
- 前記基板が誘電体層と前記誘電体層に沿って延びるトレースを備えて、少なくとも幾つかのトレースが前記少なくとも幾つかのマイクロ接点に接続される、ことを特徴とする請求項28に記載の超小型電子ユニット。
- 前記マイクロ接点が前記誘電体層の第1の側から突出し、前記ユニットが前記誘電体層の第2の側で露光されると共に前記トレースによって前記マイクロ接点の少なくとも幾つかに電気的に接続される端子も備えている、ことを特徴とする請求項33に記載の超小型電子ユニット。
- 請求項34に記載の超小型電子ユニットと前記マイクロ接点に接続された接点とを有する超小型電子部品を備える構体。
- 前記ベース領域と前記先端部領域との間に配置された別の領域が存在する、ことを特徴とする請求項32に記載の構体。
- (a)基板と、
(b)前記基板から垂直方向に突出する複数のマイクロ接点とを備えて、前記それぞれのマイクロ接点が前記基板に隣接した近位部分と、前記基板から離れる垂直方向に前記近位部分から延びる細長い遠位部分とを有し、ポストの幅が前記近位部分と前記遠位部分との間の接続部において段階的に増加する、超小型電子ユニット。
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US11/717,587 US8641913B2 (en) | 2003-10-06 | 2007-03-13 | Fine pitch microcontacts and method for forming thereof |
PCT/US2008/003473 WO2008112318A2 (en) | 2007-03-13 | 2008-03-13 | Fine pitch microcontacts and method for forming thereof |
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- 2008-03-13 WO PCT/US2008/003473 patent/WO2008112318A2/en active Application Filing
- 2008-03-13 JP JP2009553652A patent/JP5980468B2/ja active Active
- 2008-03-13 CN CN201510090062.0A patent/CN104681450A/zh active Pending
- 2008-03-13 CN CN200880011888A patent/CN101658078A/zh active Pending
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US9818713B2 (en) | 2015-07-10 | 2017-11-14 | Invensas Corporation | Structures and methods for low temperature bonding using nanoparticles |
US9633971B2 (en) | 2015-07-10 | 2017-04-25 | Invensas Corporation | Structures and methods for low temperature bonding using nanoparticles |
US10535626B2 (en) | 2015-07-10 | 2020-01-14 | Invensas Corporation | Structures and methods for low temperature bonding using nanoparticles |
US10886250B2 (en) | 2015-07-10 | 2021-01-05 | Invensas Corporation | Structures and methods for low temperature bonding using nanoparticles |
US10892246B2 (en) | 2015-07-10 | 2021-01-12 | Invensas Corporation | Structures and methods for low temperature bonding using nanoparticles |
US11710718B2 (en) | 2015-07-10 | 2023-07-25 | Adeia Semiconductor Technologies Llc | Structures and methods for low temperature bonding using nanoparticles |
US11973056B2 (en) | 2016-10-27 | 2024-04-30 | Adeia Semiconductor Technologies Llc | Methods for low temperature bonding using nanoparticles |
US12027487B2 (en) | 2016-10-27 | 2024-07-02 | Adeia Semiconductor Technologies Llc | Structures for low temperature bonding using nanoparticles |
Also Published As
Publication number | Publication date |
---|---|
CN101658078A (zh) | 2010-02-24 |
CN104681450A (zh) | 2015-06-03 |
US20080003402A1 (en) | 2008-01-03 |
KR101466252B1 (ko) | 2014-11-27 |
US8641913B2 (en) | 2014-02-04 |
US20140145329A1 (en) | 2014-05-29 |
KR20090122274A (ko) | 2009-11-26 |
WO2008112318A3 (en) | 2008-11-13 |
JP5980468B2 (ja) | 2016-08-31 |
WO2008112318A2 (en) | 2008-09-18 |
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