TWI222734B - High density module card, substrate and fabrication for the same - Google Patents

Abstract

A high-density module card is provided with a metal substrate 100, a thin film interconnect layer 114, a solder mask layer 112 and a via 105. The metal substrate 100 has an opening 116. The thin film interconnect layer 114 formed with dielectric layers 101, 102, 106, 110 and conductive layers 103, 104, 108, 112 alternatively. The opening 116 exposes partial bottom surface 114b of the interconnect layer 114. The exposed bottom surface 114b has conductive openings 124 to expose partial conductive layer 103. The solder mask 122 having openings (conductive openings) 124 partially covers the top surface 114a of the interconnect layer 114 to partially expose conductive layer 112 that is nearest to the top surface 114a. The via 105 is arranged at a region outside of the opening 116 to connect the conductive layers 103, 104 and the metal substrate 100.

Description

1222734 JE__η

Case No. 92127385_ V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a module card (high density m () d card), a substrate and a manufacturing method thereof, and in particular to an e-mode Group card, substrate and manufacturing method thereof. n breadth [previous technology] The development trend of chip packaging technology is toward shrinking size and increasing the number of contacts / _, so the flip chip (f 1 i P chip) technology has become the mainstream _ wheel chip technology is mainly on the wafer to the outside Contacts (usually metal soldering. Overlay bumps and electrically connect to the substrate through the bumps.) Chip-on-chip technology can connect input / output contacts at high density. The technology can make the connection path between the chip and the substrate the shortest, so it is connected by overlay. The structure of the conventional low-power module substrate can be divided into two types: laminated substrate and bui it up substrate. When synthesizing a substrate, the part of the outer layer is difficult to control due to the flatness ^ "卜 ㈣ 丨 ^) ^, so it is difficult to meet the ^ pitch requirements of high-density flip-chip sealing. If the substrate is constructed in a laminated manner, although It is relatively low, but the strength of the substrate is insufficient to provide sufficient support in the manufacturing process. When such conventional substrates are applied to the requirements of high density (density) and fine pitch of flip-chip packaging, they will Make m card thickness The thickness is too thick, which cannot meet the trend of thinness, thinness and shortness, or the problem of insufficient strength of the ancient fruit substrate. / 疋 有 [发明 内容]

1222734 Case No. 92127385 Amendment V. Description of the Invention (2) In order to solve the conventional problems, one object of the present invention is to propose a high-density module card, a substrate and a manufacturing method thereof, so that the substrate has sufficient strength, and It can meet the requirements of high density and small pitch. To achieve the above and other objectives, the present invention proposes a high-density module substrate, including: a metal substrate, a thin-film interconnect layer, a solder mask layer, and a through hole. The metal substrate has a first surface and a second surface, and a substrate opening is located on the second surface. The film interconnect layer has a top surface and a bottom surface opposite thereto, and the bottom surface is connected to the first surface of the metal substrate. In addition, the film interconnect layer has a plurality of dielectric layers and a plurality of wire layers, and a dielectric layer is provided between every two adjacent wire layers. The substrate opening exposes a part of the bottom surface, and the exposed bottom surface has a plurality of electrical connection openings, exposing a part of the wire layer. The solder mask layer covers the top surface of the film interconnect layer, and has a plurality of solder mask openings, exposing a portion of the conductor layer closest to the top surface. Through-holes, located outside the opening of the substrate, penetrate through the dielectric layers and electrically connect the lead layers and the metal substrate at the same time. The present invention further provides a high-density module card. The above-mentioned module substrate further includes a plurality of chips, a plurality of sealing structures, and a plurality of connection pads. The chip system is respectively mounted on the top surface of the thin film interconnect layer, electrically connected to the wire layer exposed by the solder resist layer, and mounted on the bottom surface of the exposed portion of the substrate opening, and electrically connected to the closest bottom surface. Of the wire layer. The sealant structure covers the electrical connection between the chip and the wire layer. The connection pad system covers the top surface of the thin film interconnect layer and covers part of the conductor layer exposed by the solder mask. The invention further provides a method for manufacturing a high-density module card, which includes: providing a metal substrate having a first surface and a second surface. Film

10391twfl.ptc Page 8 1222734 _Case No. 92127385_ Year, Month, Date, Amendment_ V. Description of the Invention (3) The deposition method forms an interconnecting layer, which covers the first surface of the metal substrate. The method of forming the interconnect includes forming a dielectric layer, forming a wire layer overlying the dielectric layer, and repeating this step several times to form the interconnect layer. The interconnecting layer has a top surface and a bottom surface opposite to the top surface layer, and the bottom surface covers the metal substrate. Forming at least one substrate opening on the second surface of the metal substrate to expose a portion of the bottom surface of the interconnect layer. At least one of the substrate openings has a wafer placement area, a glue area, and an evacuation area. The dispensing area and the evacuation area are connected to the wafer placement area and are a pair of areas extending outward along the diagonal of the wafer placement area. A solder mask is formed and covers the top surface of the interconnect layer. A plurality of electrical connection openings are formed in the solder mask and the dielectric layer closest to the bottom surface to expose a portion of the conductive layer closest to the top surface and a portion of the conductive layer closest to the bottom surface. A plurality of connection pads are formed, covering the top surface, and covering a part of the wire layer exposed by the electrical connection opening. Attach multiple chips, attach to the top surface separately, electrically connect to the exposed part of the wire layer closest to the top surface, and attach to the bottom surface of the exposed part of the substrate opening, electrically connect to the bottom surface closest Part of the wire layer. At least one of these wafers is a flip-chip wafer and is attached to the wafer placement area. Dispensing is performed in the dispensing area of the opening of the substrate, and vacuuming is performed in the evacuation area to fill a primer into the electrical connection of the chip-on-chip and the wire layer. A piece of glue material is used to cover the electrical connection between the chip and the wire layer. According to the features of the present invention, the use of a metal substrate as the base of a high-density module card can provide stable mechanical strength. The thin film deposition method used in the semiconductor manufacturing process is used for build up to obtain a high flatness. Therefore, the precision control is good, and the requirements of high density and fine pitch can be achieved. Therefore, a module substrate with sufficient support strength compared with the substrate and which can meet the requirements of micro-pitch is made. And

10391twfl.ptc Page 9 1222734 _Case No. 92127385_ Year Month Amendment _ V. Description of the invention (4) Due to the sufficient support strength, the present invention can form modules on both sides of the substrate, thereby further increasing the density. According to the features of the present invention, a pair of dispensing areas and a vacuuming area extend diagonally from the wafer placement area, and the primer process system after attaching the wafer-on-wafer is performed in a row of the wafer placement area, and the opposite Vacuum can be applied at once, in this way, the time for filling the primer can be shortened. And because the dispensing area and the vacuum area have been set in the opening of the substrate, the chip placement area can be minimized, and the reliability of the package can be improved. According to the features of the present invention, each wire layer is wavy at the opening where the corresponding wafer is placed, and has a buffering effect when the substrate is deformed, thereby improving the ability of the substrate to withstand strain and thus improving the reliability of the product. According to the features of the present invention, the through-hole is used to connect the wire layer of the film interconnecting layer with the metal substrate and ground the metal substrate, so that each chip on the module card can obtain an excellent current transmission effect. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings for detailed description as follows: [Embodiment] [First Embodiment ] Please refer to FIGS. 1 to 5 in order, which are cross-sectional views showing a process flow of a high-density module card according to a preferred embodiment of the present invention. Referring to FIG. 1, a metal substrate 100 is provided, which has a first surface 100a and a second surface 100b. An interconnect layer 114 (Fig. 3) is formed by a thin film deposition method, which is alternately formed by a dielectric layer and a wire layer, and is coated on a metal

10391twf1.ptc Page 10 1222734 __Case No. 92127385_ Year Month Day __ V. Description of the invention (5) The first surface of the substrate 100 has a dielectric layer between two adjacent wire layers. As shown in FIG. 2, a dielectric layer 101 is formed by a thin film deposition method and covers a first surface 100a of a metal substrate 100a. A patterned wire layer 103 is formed on the dielectric layer 101 by a lamination method. A patterned dielectric layer 102 and a wiring layer 103 are formed. Next, a patterned wiring layer 104 is formed and covered with the dielectric layer 102. Here, the method of forming the patterned dielectric layer includes, for example, laser drilling. The method for forming the patterned conductive layer is, for example, a semi-additive method, that is, a seed layer (not shown) is deposited on the dielectric layer, and then a patterned photoresist layer (not shown) is formed. (Shown) overlying the seed layer, and then plating the wire layer in the pattern opening (not shown) of the patterned photoresist layer by electroplating, and then remove the patterned photoresist layer and remove a part Seed layer 0 It is worth noting that the through holes 105 of the present invention are formed. Openings are formed in the dielectric layers 101 and 102 using a method such as laser perforation, and through-holes 105 are formed between the wiring layers 101 and 104 in conjunction with the aforementioned plating method. . The position of the beaker hole 105 needs to be located in a region other than the opening to be formed on the substrate. The through hole 105 is penetrated through the dielectric layer 102 to contact the wiring layer 103, and penetrates the dielectric layer 101 to contact the metal substrate. Here, with the structural features of the through-hole 105 described above, the metal substrate 100 can be further connected, so that a short and wide ground connection can be formed. Therefore, the current transmission efficiency of the chip is improved. Much as shown in FIG. 3, the step of forming the interconnect 114 is continued,-the patterned dielectric layer 106 is overlaid on the wire layer 104, and then 'formed'

Case No. 1222734 Case No. 92127385 V. Description of the Invention (6) The patterned wire layer 108 covers the dielectric layer 110 and forms a solder resist layer 122 covering the top surface 114a of the interconnect layer 114. The top surface 11 4a and the bottom surface 11 4b of the inner line 11 4 are defined here for the convenience of subsequent description. The interconnect layer 1 1 4 is connected to the metal substrate 100 with a bottom surface 1 1 4 b. The invention uses a metal substrate as the base of a high-density module card, which can provide stable mechanical strength. In addition, the present invention utilizes a thin film deposition method in a semiconductor manufacturing process to form an interconnect layer on a metal substrate, that is, build up in a thin film deposition manner, so that a highly flattened layer can be obtained, so the accuracy Good control, and can meet the requirements of high density and fine pitch. Next, as shown in FIG. 4, at least one substrate opening 6, 1 18 (the illustration is based on 2 as an example), is located on the second surface 1 0 0 b of the metal substrate 1 00 to expose the interconnection Part of the bottom layer 1 1 4 of the wire layer 1 1 4 b. In addition, a cavity 120 may be formed on the first surface i00b of the metal substrate 100. Here, the method for forming the openings and recesses in each substrate is, for example, a wet etching. Please refer to FIG. 11 again, which illustrates a plan view of a substrate opening according to a preferred embodiment of the present invention. At least one of the substrate openings 1 1 6 and 1 1 8 (in the embodiment, 1 1 6 is taken as an example) has a wafer placement area i 6 a / a little glue area 116 b and a vacuum extraction area 116 c. In addition, the dispensing area 116b and the extraction * area 1 1 6 c are connected to the wafer placement area 1 1 6 a and are a pair of areas extending outward along the diagonal of the wafer placement area 1 1 6 a. Thereafter, as shown in FIG. 5, a plurality of electrical connection openings 1 2 4 are formed, and the dielectric > 1 〇1 on the solder resist 122 and the bottom surface 114b closest to the interconnect layer 114 is exposed to the nearest Part of the conductor layer of the top surface 11 4 a 1 1 2 and the most & near

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1222734 Case No. 92127385 Description of the invention (7) :: 1 2: Part of the wire layer 103. So far, the high-density mold of the present invention is completed. [Second embodiment] Following the steps of the first embodiment, it is also possible to add a new one. This high-density module card is exemplified in the second embodiment. Follow the steps in Figures 1 to 5 of the example, and then continue with the same components as in the first example using the same bluff, so repeated explanations are omitted here. Figure 坌 β Age-forming a plurality of connection pads 126 (only one is shown in the side cross-sectional view = no, for the electrical connection opening 124 (of the top surface 11 4a of the interconnect 114) is

Of the wire layer 112. These connection pads 126 can be used as the input / output contacts of the module, for example, including gold fingers. , ', · M As shown in Fig. 7, multiple package components (including i \ a \ V Vt, surface-mounted package components, flip-chip package components, and passive components [not shown) (Shown, etc.) is electrically connected to the module substrate. (Wound H, chip 1 pinched on the top surface 114a of the interconnect layer 114, and the electrical connection station is attached with a y connection) to the exposed part closest to the top surface 114a Part of the wire layer 112. The connection = ^ Λ34 'Placed in the cavity 120' and is electrically connected (wired) to a portion of the wire layer U4a on the top surface of the layer 114 " 3. The electrical connection between the cover wafer 128 and the wire layer 112 is sealed in a “glue structure 136. A glue material is filled in the cavity 120, and the crystal i, two days] is electrically connected to the wire layer 103. At the connection, a chip 130 is formed-sealed on the top surface of the interconnect layer 114. The electrical connection is made.

1222734--Case No. 921273RR _ Month and Day _ Rev. 4___ V. Description of the invention (8) (Flip-Chip Connection) to the exposed part of the wire layer closest to the top surface 丨 4a 1 12. A piece of adhesive material (primer) is filled in the wafer 130 and the exposed part of the wiring layer 1 12 to form a primer structure 38. Here, surface mount technology (SMT) can also be used to solder electronic components to the top or bottom surface of the interconnect layer. For example, package components 丨 3 2, 1 5 (or passive elements, etc. [not shown]) are soldered to the top surface 1 14a and the bottom surface 1 14b of the interconnect layer 114, and are electrically connected to the exposed surfaces. Near the top surface 丨 丨 "and a part of the conductor layer of the bottom surface 114b. As shown in Fig. 8, a flip-chip wafer 148 is attached to a part of the bottom surface 114b exposed by the substrate opening 116 and placed on the wafer. Area 丨 丨 is electrically connected to (bottom u) the part closest to the bottom surface 丨 4b part of the wire layer 丨 03. Among them, the substrate opening in figure 10 丨 6 is for the edge of figure 丨 3丨 —! Section line / section 1 1 6 of the substrate opening 1 6b is used for dispensing. For example and ancient times, a point dispensing device can be used, for example, a point needle 44. 44 penetrates into the section 11 6b, A piece of adhesive material 146 is supplied into the opening 116 of the substrate. The vacuum material is evacuated. (This method is used to fill the sealing material = electrical connection between the film 148 and the wire layer 103.) As the bottom of the present invention / the spirit of the present invention, the shape of the wafer placement opening 1 does not need to be limited. The key lies in the crystal # 放 晋 和 " The Dili area 116a is close to and slightly larger than the outer shape of the chip 148. And the earning F, the ancient ~ the broad, the p people dispense & 1 1 6 b and the vacuum area 1 1 6 C The toilet area μ placement area 1 1 6a is connected to each other, and is respectively located at u * 里 彳 彳 β 1 亍 ..., the Japanese-Japanese film I knife and the other J are located in the two opposite sides of the Japanese-Japanese film placement area 1 1 6 a.

10391twf1.ptc Page 14 1222734 Case No. 92127385 Λ_η Revision V. Description of invention (9) side to facilitate vacuuming operation. To get the structure as shown in Figure 9. This completes the illustration of the high-density module card of the present invention. Except for the substrate opening, which is preferably wet-etched, the other openings mentioned above (the patterned photoresist layer, the patterned dielectric layer, the opening in the solder resist layer, the electrical connection opening, etc. used to form the patterned wire layer) Although there are various methods in the practice, the laser method is better for the test phase of the factory, because various specifications have not yet been determined, and the design needs to be continuously revised during the trial. The laser opening can make the design changes more flexible and shorten the time required to change the design. In order to further improve the ability of the wiring pattern of each wire layer to withstand tension when the temperature of the substrate or other reasons increases, so as to improve reliability, the structure of the wire layer of the present invention may be slightly changed. Please refer to FIG. 10, which illustrates an example of a wiring pattern around each of the conductor layers corresponding to the substrate openings 1 1 6 and 1 1 8. In the figure, the wire layer 104 is taken as an example. It is worth noting here that when forming the above-mentioned wire layer (1 0 3, 1 0 4, 1 0 8, 1 1 2), the circuit pattern of each wire layer is at the edge of the corresponding substrate opening 1 1 6 and 1 1 8 Department is wavy. According to the spirit of the present invention, the use of a wave-shaped elongated circuit pattern at the edge of the opening of the substrate has a buffering effect when the substrate is deformed, so that the wires are not damaged due to the deformation, thereby improving the reliability of the product. It can be seen that the present invention does not need to be limited to this wavy shape, in short, such as a zigzag shape or other bent shapes. It can be known from the disclosure of the embodiments that the present invention has at least the following advantages: (1). The present invention uses a metal substrate as the base of a high-density module card, which can provide

10391twfl.ptc Page 15 1222734 _ Case No. 92127385_ Year Month Day Amendment _ V. Description of the invention (10) Provide stable mechanical strength. In addition, the present invention reuses the thin film deposition method build-up in the semiconductor process to obtain a high-flatness build-up. Therefore, the precision control is good, and the requirements of high density and fine pitch can be achieved. (2) The present invention has a pair of dispensing areas and a vacuuming area extending diagonally from the wafer placement area. For the primer process system of a flip-chip wafer, a stack of wafers is used for dispensing, and Vacuum can be applied at once, in this way, the time for filling the primer can be shortened. (3). Similarly to (2), because the dispensing area and the vacuum area have been set in the wafer placement opening, the wafer placement area can be minimized, and the reliability of the package can be improved. (4) Each wire layer of the present invention is wavy at the opening where the corresponding wafer is placed, and has a buffering effect when the substrate is deformed, so that it can improve the ability of the substrate to withstand strain and thus improve the reliability of the product. (5) The present invention can use a through hole to connect the wire layer of the film interconnecting layer and the metal substrate, and ground the metal substrate, so that each electronic component (such as a chip and a package component) on the module card has Good current delivery performance. Although the present invention has been disclosed in the preferred embodiment as above, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and retouching without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection shall be determined by the scope of the attached patent application.

10391twf1.ptc Page 16 1222734 _Case No. 92127385_Year Month Day_ί ± ^ _ Brief Description of Drawings Figures 1 to 5 are cross-sectional views showing the process flow of a high-density module substrate according to the first embodiment of the present invention; 6 to 9 are cross-sectional views showing a process flow of a high-density module card according to a second embodiment of the present invention following the steps of the first embodiment; and FIG. 10 is a diagram showing each of the processes according to the preferred embodiment of the present invention. An exemplary plan view of one of the wiring patterns of the wire layer; and FIG. 11 illustrates an exemplary plan view of one of the substrate openings according to a preferred embodiment of the present invention. [Explanation of Graphical Remarks] 100: metal substrate 100a: first surface 100b: second surface 114: interconnecting layer (film interconnecting layer) 114a: top surface 114b: bottom surface 101, 102, 106, 110: dielectric Layers 103, 104, 108, 112: wire layer 105: through-hole 1 1 6, 1 1 8: substrate opening 116a: wafer placement area 116b: dispensing area 116c: vacuum area 120: cavity 1 2 2: Solder mask 12 4: Electrical connection openings 126: Connection pads 128, 130, 134, 148: Wafers 132, 150: Package components 1 3 6, 1 4 0: Sealant structure 14 2: Evacuation tube 1 4 4: Points Glue Needle 14 6: Sealant

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Claims (1)

1222734 _ Case No. 92127385_ Year, Month, and Day Amendment _ 6. Application for patent scope 1. A high-density module substrate includes: a metal substrate having a first surface and a second surface, and the metal substrate has a substrate opening 'Located on the second surface; a thin film interconnecting layer having a top surface and a bottom surface opposite thereto, the thin film interconnecting layer is connected to the first surface of the metal substrate with the bottom surface, the film The interconnect layer has a plurality of dielectric layers and a plurality of wire layers, and each of the two adjacent wire layers has a dielectric layer, wherein the substrate opening exposes a portion of the bottom surface and exposes The bottom surface has a plurality of electrical connection openings to expose a portion of the wire layer; a solder mask layer covering the top surface of the film interconnect layer, the solder mask layer has a plurality of solder mask openings, A portion of the wire layer closest to the top surface is exposed; and a through hole located in an area outside the opening of the substrate penetrates the dielectric layers and is electrically connected to the wire layers and the metal substrate. 2. The high-density module substrate according to item 1 of the scope of patent application, wherein the lead layers are wavy at the edge corresponding to the opening of the substrate. 3. The high-density module substrate as described in item 1 of the patent application scope, wherein the metal substrate is connected to the ground. 4 · The high-density module substrate according to item 1 of the patent application scope, wherein the substrate opening includes a wafer placement area, which is suitable for placing a flip-chip wafer, a glue area, and a vacuum area, where the wafer is placed The shape of the area is slightly larger than that of the flip-chip wafer. The dispensing area and the vacuum area are connected to the wafer placement area and are a pair of areas extending outward along the diagonal of the wafer placement area. 10391twfl.ptc Page 18 1222734 _Case No. 92127385_ Year, Month, and Day Amendment _ 6. Application for patent scope 5. The high-density module substrate as described in item 1 of the patent scope, wherein the metal substrate has a recess and is located at The first surface of the metal substrate. 6. A high-density module substrate comprising: a metal substrate having a first surface and a second surface, and the metal substrate having a substrate opening located on the second surface; a thin film interconnect layer having A top surface and a bottom surface opposite thereto, the thin film interconnecting layer is connected to the first surface of the metal substrate with the bottom surface, and the thin film interconnecting layer has a plurality of dielectric layers and a plurality of wire layers A dielectric layer is provided between every two adjacent wire layers, wherein the substrate opening exposes a portion of the bottom surface, and the exposed bottom surface has a plurality of electrical connection openings to expose the portion A portion of the wiring layer; and a solder mask layer covering the top surface of the film interconnect layer, the solder mask layer having a plurality of solder mask openings, exposing a portion of the wiring layer closest to the top surface, The wire layers are wavy at the edge corresponding to the opening of the substrate. 7. A high-density module card, comprising: a metal substrate having a first surface and a second surface, and the metal substrate having a substrate opening located on the second surface; a thin film interconnecting layer having A top surface and a bottom surface opposite thereto, the thin film interconnecting layer is connected to the first surface of the metal substrate with the bottom surface, and the thin film interconnecting layer has a plurality of dielectric layers and a plurality of 10391twf1.ptc Page 19, 1222734 _ Case No. 92127385_ year, month, day, and amendment _ 6. Patent application wire layer, there is a dielectric layer between every two adjacent wire layers, and the substrate opening is exposed A part of the bottom surface, and the exposed bottom surface has a plurality of electrical connection openings to expose a part of the wire layer; a solder mask layer covering the top surface of the film interconnect layer, the mask layer The solder layer has a plurality of solder mask openings, exposing a portion of the wire layer closest to the top surface; a plurality of chips are respectively mounted on the top surface of the film interconnect layer, and are electrically connected to the solder mask layer. The exposed wire layer is mounted on the bottom surface exposed by the substrate opening, and is electrically connected to the wire layer closest to the bottom surface; a plurality of sealing structures covering the chips and the wires Electrical connection points of the layer; a plurality of connection pads covering the top surface of the film interconnect layer, covering a portion of the wire layer exposed by the solder mask layer; and a through hole located outside the opening of the substrate Area through these dielectric layers, At the same time, the wire layers and the metal substrate are electrically connected. 8. The high-density module card as described in item 7 of the scope of patent application, further comprising an electronic component, electrically connected to the exposed portion of the wire layer through the electrical connection openings. 9. The high-density module card according to item 8 of the scope of patent application, wherein the electronic component includes a passive component and a surface-adhesive package component. 10. The high-density module card according to item 7 of the scope of the patent application, wherein the wire layers are wavy at the edge corresponding to the opening of the substrate. 1 1. The high-density module card as described in item 7 of the scope of patent application, which 10391twf1.ptc Page 20 1222734 _ Case No. 92127385_ Year Month Day Amendment _ 6. The scope of the patent application The metal substrate is connected to ground. 1 2. The high-density module card according to item 7 of the scope of patent application, wherein the connection pads include gold fingers. 1 3. The high-density module card according to item 7 of the scope of patent application, wherein the substrate opening includes a wafer placement area, which is suitable for placing a flip-chip wafer, a glue area, and a vacuum area, wherein the wafer The shape of the placement area is slightly larger than that of the flip-chip wafer. The dispensing area and the vacuum area are connected to the wafer placement area and are a pair of areas extending outward along the diagonal of the wafer placement area. 1 4. The high-density module card according to item 7 of the scope of the patent application, wherein the metal substrate has a cavity located on the first surface of the metal substrate, and the high-density module card further includes: a chip , Placed in the cavity and electrically connected to a portion of the wire layer closest to the top surface of the film interconnect layer; and an adhesive structure filled in the cavity to cover the chip and the chip Electrical connection with the wire layer. 15. A high-density module card comprising: a metal substrate having a first surface and a second surface, and the metal substrate having a substrate opening located on the second surface; a thin film interconnecting layer having A top surface and a bottom surface opposite thereto, the thin film interconnecting layer is connected to the first surface of the metal substrate with the bottom surface, and the thin film interconnecting layer has a plurality of dielectric layers and a plurality of wire layers A dielectric layer is provided between every two adjacent wire layers, wherein the substrate opening exposes a part of the bottom surface, and the bottom surface is exposed 10391twfl.ptc Page 21 1222734 _Case No. 92127385_ Revised Date_ Sixth, the scope of the patent application has a plurality of electrical connection openings to expose a part of the wire layer; a solder mask layer, covering the film On the top surface of the wiring layer, the solder mask has a plurality of solder mask openings, exposing a portion of the wire layer closest to the top surface; a plurality of chips are mounted on the top surface of the film interconnect layer, respectively. Is electrically connected to the wire layer exposed by the solder mask, and is mounted on the bottom surface exposed by the opening of the substrate, and is electrically connected to the wire layer closest to the bottom surface; a plurality of sealing structures Covering the electrical connections between the chips and the wire layers; and a plurality of connection pads covering the top surface of the film interconnect layer and covering the wire layer exposed by the solder mask layer The wire layers are wavy at the edge corresponding to the opening of the substrate. 16. A method for manufacturing a high-density module card, comprising: providing a metal substrate having a first surface and a second surface; forming an interconnecting layer by a thin film deposition method, and covering the first substrate and the second substrate; A surface includes: forming a dielectric layer, forming a wire layer overlying the dielectric layer, and repeating this step several times to form the interconnect layer, the interconnect layer having a top surface and opposite thereto A bottom surface covering the metal substrate with the bottom surface; forming at least one substrate opening on the second surface of the metal substrate to expose a portion of the bottom surface of the interconnect layer, at least one of the substrate openings One has a wafer placement area, a little glue area and a vacuum area, 10391twfl.ptc Page 22 1222734 _ Case No. 92127385 _ Year, Month, Day and Date Amendment _6. Patent Application Scope The dispensing area and the vacuum area are connected to the wafer placement area and extend outward along the diagonal of the wafer placement area. Extend a pair of areas; form a solder resist layer covering the top surface of the interconnect layer; form a plurality of electrical connection openings in the solder resist layer and the bottom surface closest to the interconnect layer A dielectric layer to expose a portion of the wiring layer closest to the top surface and a portion of the wiring layer closest to the bottom surface; forming a plurality of connection pads covering the top surface of the interconnect layer and covering A part of the wire layer exposed at the electrical connection opening; a plurality of chips are attached, respectively attached to the top surface of the interconnect layer, and electrically connected to the exposed portion closest to the top surface The wire layer is attached to a portion of the bottom surface exposed by the openings of the substrates, and is electrically connected to a portion of the wire layer closest to the bottom surface. At least one of the chips is a flip-chip wafer. In the wafer placement area; the dispensing at the opening of the substrate Dispensing and vacuuming in the evacuation area to fill a primer at the electrical connection between the chip-on-chip and the wire layer; and cover the wafer and the wires with a piece of glue material Electrical connection of the layers. 1 7. The method for manufacturing a high-density module card according to item 16 of the scope of patent application, further comprising: electrically connecting an electronic component to an exposed portion of the wire through the electrical connection openings. Floor. 1 8. The method for manufacturing a high-density module card according to item 16 of the scope of patent application, further comprising: forming a through hole located outside the substrate opening of the metal substrate, 10391twfl.ptc Page 23 1222734 _Case No. 92127385_Year Month Date Amendment_ Sixth, the scope of patent application runs through the dielectric layers to contact the wire layers and contact the metal substrate. 19. The method for manufacturing a high-density module card according to item 18 of the scope of patent application, wherein the method of forming the through hole includes laser drilling and electroplating. 20. The method for manufacturing a high-density module card according to item 18 of the scope of patent application, wherein the metal substrate is connected to a ground. 2 1. The method for manufacturing a high-density module card according to item 16 of the scope of patent application, and the method for forming the openings of the substrates includes wet etching. 2 2. The method for manufacturing a high-density module card as described in item 16 of the scope of patent application, and the method for forming the electrical connection openings includes laser drilling. 10391twfl.ptc Page 24