JP2010516049A - 平坦化された金属高密度パワーmosfet - Google Patents
平坦化された金属高密度パワーmosfet Download PDFInfo
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- JP2010516049A JP2010516049A JP2009545008A JP2009545008A JP2010516049A JP 2010516049 A JP2010516049 A JP 2010516049A JP 2009545008 A JP2009545008 A JP 2009545008A JP 2009545008 A JP2009545008 A JP 2009545008A JP 2010516049 A JP2010516049 A JP 2010516049A
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- power mosfet
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- 229910052751 metal Inorganic materials 0.000 title claims description 10
- 239000002184 metal Substances 0.000 title claims description 10
- 238000001465 metallisation Methods 0.000 claims abstract description 40
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 claims abstract description 24
- 238000005137 deposition process Methods 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims abstract description 9
- 238000007517 polishing process Methods 0.000 claims abstract 7
- 238000000151 deposition Methods 0.000 claims description 12
- 230000008021 deposition Effects 0.000 claims description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 239000010937 tungsten Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 6
- 235000012239 silicon dioxide Nutrition 0.000 claims 3
- 239000000377 silicon dioxide Substances 0.000 claims 3
- 238000013386 optimize process Methods 0.000 claims 1
- 238000012876 topography Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000007792 addition Methods 0.000 description 2
- 238000000637 aluminium metallisation Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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Abstract
【選択図】図7
Description
Claims (19)
- パワーMOSFETの複数の層を作製して上部表面の活性領域を形成し、前記活性領域の上に化学機械研磨プロセスを実施して実質的に平坦な表面を形成し、実質的に平坦な表面の上に金属化堆積プロセスを実施して、パワーMOSFETの製造を完了するパワーMOSFETの製造方法。
- 活性領域が二酸化シリコンのサブ領域およびタングステンのサブ領域を含む請求項1に記載のパワーMOSFETの製造方法。
- 化学機械研磨プロセスがタングステンに最適化されたプロセスを含む請求項2に記載のパワーMOSFETの製造方法。
- 金属化堆積が4μm未満の深さの金属層を堆積するように構成された請求項1に記載のパワーMOSFETの製造方法。
- 前記金属層がパワーMOSFETの製造を完了するための複数のワイヤボンドを受け入れるように構成された請求項4に記載のパワーMOSFETの製造方法。
- パワーMOSFETが高密度パワーMOSFETである請求項1に記載の方法。
- 上部表面の活性領域を形成する複数の層を有する高密度パワーMOSFETを含み、
前記活性領域は化学機械研磨プロセスにより実質的に平坦な表面に平坦化され、前記活性領域の上に金属化層が堆積された装置。 - 活性領域が二酸化ケイ素のサブ領域およびタングステンのサブ領域を含む請求項7に記載の装置。
- 化学機械研磨プロセスがタングステンに最適化されたプロセスを含む請求項8に記載の装置。
- 金属層の厚さが4μm未満である請求項7に記載の装置。
- 金属層がパワーMOSFET用の複数のワイヤボンドと結合している請求項10に記載の装置。
- パワーMOSFETの複数の層を作製して上部表面の活性領域を形成し、前記活性領域に化学機械研磨プロセスを実施して実質的に平坦な表面を形成し、実質的に平坦な表面に金属化堆積プロセスを実施し、パワーMOSFETの製造を完了することを含み、金属化堆積は深さが4μm未満の金属層を堆積するように構成された高密度パワーMOSFETを製造する方法。
- 活性領域が二酸化ケイ素のサブ領域およびタングステンのサブ領域を含む請求項12に記載の方法。
- 化学機械研磨プロセスがタングステンに最適化されたプロセスを含む請求項13に記載の方法。
- 金属化堆積が2μm未満の深さの金属層を堆積するように構成された請求項12に記載の方法。
- 前記金属層が、パワーMOSFETの製造を完了するための複数のワイヤボンドを受け入れるように構成された請求項15に記載の方法。
- 活性領域の上部表面が高アスペクト比の表面である請求項12に記載の方法。
- パワーMOSFETが集積ショットキーデバイスを含む請求項12に記載の方法。
- パワーMOSFETがNチャネルデバイスまたはPチャネルデバイスである請求項12に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/651,258 | 2007-01-08 | ||
US11/651,258 US9437729B2 (en) | 2007-01-08 | 2007-01-08 | High-density power MOSFET with planarized metalization |
PCT/US2008/050417 WO2008086295A1 (en) | 2007-01-08 | 2008-01-07 | Planarized metalization high-density power mosfet |
Publications (2)
Publication Number | Publication Date |
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JP2010516049A true JP2010516049A (ja) | 2010-05-13 |
JP5481200B2 JP5481200B2 (ja) | 2014-04-23 |
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Application Number | Title | Priority Date | Filing Date |
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JP2009545008A Active JP5481200B2 (ja) | 2007-01-08 | 2008-01-07 | 平坦化された金属高密度パワーmosfet |
Country Status (7)
Country | Link |
---|---|
US (1) | US9437729B2 (ja) |
JP (1) | JP5481200B2 (ja) |
KR (1) | KR101294754B1 (ja) |
CN (1) | CN101636821B (ja) |
DE (1) | DE112008000110B4 (ja) |
TW (1) | TWI471943B (ja) |
WO (1) | WO2008086295A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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US9437729B2 (en) | 2007-01-08 | 2016-09-06 | Vishay-Siliconix | High-density power MOSFET with planarized metalization |
US9947770B2 (en) * | 2007-04-03 | 2018-04-17 | Vishay-Siliconix | Self-aligned trench MOSFET and method of manufacture |
US9484451B2 (en) * | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
US9425306B2 (en) | 2009-08-27 | 2016-08-23 | Vishay-Siliconix | Super junction trench power MOSFET devices |
US9443974B2 (en) | 2009-08-27 | 2016-09-13 | Vishay-Siliconix | Super junction trench power MOSFET device fabrication |
US9431530B2 (en) * | 2009-10-20 | 2016-08-30 | Vishay-Siliconix | Super-high density trench MOSFET |
US9614043B2 (en) | 2012-02-09 | 2017-04-04 | Vishay-Siliconix | MOSFET termination trench |
US9842911B2 (en) | 2012-05-30 | 2017-12-12 | Vishay-Siliconix | Adaptive charge balanced edge termination |
US9722041B2 (en) * | 2012-09-19 | 2017-08-01 | Vishay-Siliconix | Breakdown voltage blocking device |
US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
CN107078161A (zh) | 2014-08-19 | 2017-08-18 | 维西埃-硅化物公司 | 电子电路 |
EP3183754A4 (en) | 2014-08-19 | 2018-05-02 | Vishay-Siliconix | Super-junction metal oxide semiconductor field effect transistor |
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CN101636821A (zh) | 2010-01-27 |
DE112008000110B4 (de) | 2017-11-16 |
US20080164515A1 (en) | 2008-07-10 |
CN101636821B (zh) | 2013-10-30 |
DE112008000110T5 (de) | 2009-11-19 |
US9437729B2 (en) | 2016-09-06 |
KR101294754B1 (ko) | 2013-08-09 |
TWI471943B (zh) | 2015-02-01 |
KR20090131284A (ko) | 2009-12-28 |
JP5481200B2 (ja) | 2014-04-23 |
TW200837841A (en) | 2008-09-16 |
WO2008086295A1 (en) | 2008-07-17 |
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