CN108109954B - 互连结构的制造方法 - Google Patents

互连结构的制造方法 Download PDF

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CN108109954B
CN108109954B CN201611054718.4A CN201611054718A CN108109954B CN 108109954 B CN108109954 B CN 108109954B CN 201611054718 A CN201611054718 A CN 201611054718A CN 108109954 B CN108109954 B CN 108109954B
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layer
substrate
dielectric layer
opening
mask layer
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CN108109954A (zh
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朱继光
李海艇
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China Core Integrated Circuit Ningbo Co Ltd
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Semiconductor Manufacturing International Shanghai Corp
China Core Integrated Circuit Ningbo Co Ltd
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Abstract

本发明公开了一种互连结构的制造方法，涉及半导体技术领域。所述方法包括：提供衬底结构，所述衬底结构包括衬底和在所述衬底上的电介质层，所述电介质层具有延伸到所述衬底的开口；在所述电介质层的至少一部分之上形成掩模层；沉积金属层，以填充所述开口并覆盖所述电介质层未被所述掩模层覆盖的区域；去除所述掩模层；执行平坦化工艺，以使得剩余的金属层的上表面与所述电介质层的上表面基本齐平。本发明能够改善在制造互连结构时衬底翘曲的问题。

Description

互连结构的制造方法
技术领域
本发明涉及半导体技术领域，尤其涉及一种互连结构的制造方法。
背景技术
随着器件尺寸的缩小，现有的方案中通常采用大马士革工艺来形成互连结构。一个典型的互连结构的制造方法可以包括如下步骤：首先，在衬底上的电介质层中形成开口；然后，在电介质层的表面和开口中沉积阻挡层和籽晶层；之后，沉积金属以填充开口并覆盖电介质层之上的籽晶层；然后对沉积的金属进行平坦化。
然而，发明人发现，通过现有的互连结构的制造方法制造互连结构时衬底会发生翘曲，这可能会影响互连结构的可靠性。
发明内容
本发明的一个目的在于改善制造互连结构时衬底翘曲的问题。
根据本发明的一个实施例，提供了一种互连结构的制造方法，包括：提供衬底结构，所述衬底结构包括衬底和在所述衬底上的电介质层，所述电介质层具有延伸到所述衬底的开口；在所述电介质层的至少一部分之上形成掩模层；沉积金属层，以填充所述开口并覆盖所述电介质层未被所述掩模层覆盖的区域；去除所述掩模层；执行平坦化工艺，以使得剩余的金属层的上表面与所述电介质层的上表面基本齐平。
在一个实施例中，所述电介质层包括分离的第一区域和第二区域，所述第一区域的面积小于所述第二区域的面积；所述在所述电介质层的至少一部分之上形成掩模层包括：在所述第二区域的至少一部分之上形成掩模层。
在一个实施例中，在所述电介质层的至少一部分之上形成掩模层之前，还包括：在所述衬底结构上沉积阻挡层，所述掩模层形成在所述阻挡层之上。
在一个实施例中，在所述电介质层的至少一部分之上形成掩模层之前，还包括：在所述阻挡层上形成籽晶层，所述掩模层形成在所述籽晶层上。
在一个实施例中，所述沉积金属层包括：通过电镀的方式沉积所述金属层。
在一个实施例中，所述掩模层包括光刻胶。
在一个实施例中，所述金属层包括铜。
在一个实施例中，所述平坦化工艺包括化学机械抛光。
在一个实施例中，所述开口包括大马士革单镶嵌结构的开口。
在一个实施例中，所述开口包括大马士革双镶嵌结构的开口。
本发明实施例提供的互连结构的制造方法中，在电介质层的至少一部分之上形成了掩模层，从而减小了后续沉积的金属层的量，减小了金属层中的应力，从而改善了衬底翘曲的问题，提高了互连结构的可靠性和稳定性。另外，掩模层覆盖的电介质层之上没有沉积金属层，这也更便于平坦化工艺的进行，降低了平坦化工艺的难度。
通过以下参照附图对本发明的示例性实施例的详细描述，本发明的其它特征、方面及其优点将会变得清楚。
附图说明
附图构成本说明书的一部分，其描述了本发明的示例性实施例，并且连同说明书一起用于解释本发明的原理，在附图中：
图1是根据本发明一个实施例的互连结构的制造方法的流程图；
图2-图6示出了根据本发明一个实施例的互连结构的制造方法的各个阶段的截面图。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应理解，除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不应被理解为对本发明范围的限制。
此外，应当理解，为了便于描述，附图中所示出的各个部件的尺寸并不必然按照实际的比例关系绘制，例如某些层的厚度或宽度可以相对于其他层有所夸大。
以下对示例性实施例的描述仅仅是说明性的，在任何意义上都不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和装置可能不作详细讨论，但在适用这些技术、方法和装置情况下，这些技术、方法和装置应当被视为本说明书的一部分。
应注意，相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义或说明，则在随后的附图的说明中将不需要对其进行进一步讨论。
发明人针对衬底翘曲的问题进行了研究，结果发现：现有的制造方法中，在沉积金属时是通过毯式沉积的方式进行的，也即在整个衬底之上都沉积金属，但是，对于需要很厚的金属的工艺来说，例如集成无源器件(IPD)工艺需要沉积约5微米厚的金属，沉积的金属会有很大的应力，大的应力会使得衬底翘曲，也可能使得开口中沉积的金属具有缝隙，从而影响互连结构的可靠性。据此，发明人提出在沉积金属层时并非在整个衬底之上都沉积金属层，而是将衬底之上的某些区域遮挡住，这样能够减小沉积的金属层的量，进而减小沉积的金属中的应力，从而改善衬底翘曲的问题，提高互连结构的可靠性。
图1是根据本发明一个实施例的互连结构的制造方法的流程图。图2-图6示出了根据本发明一个实施例的互连结构的制造方法的各个阶段的截面图。下面结合图1、图2-图6对根据本发明一个实施例的互连结构的制造方法进行说明。
如图1所示，在步骤102，提供衬底结构。如图2所示，衬底结构包括衬底201和在衬底201上的电介质层202。电介质层202具有延伸到衬底201的开口203。衬底201中可以形成有不同的器件，例如金属氧化物半导体(MOS)器件、无源器件等。衬底201可以包括半导体层(例如硅、锗、砷化镓等)和在半导体层上的器件层。在一个实施例中，开口203可以包括大马士革单镶嵌结构的开口。在另一个实施例中，开口203可以包括大马士革双镶嵌结构的开口。图2示意性地示出了开口203为大马士革双镶嵌结构的开口的情况，在这种情况下，开口203包括延伸到电介质层202中的沟槽(trench)和位于沟槽下延伸到衬底201的通孔(via)。在某些实施例中，通孔可以包括两个或更多个。
需要说明的是，上述开口203可以通过现有的大马士革工艺来形成，在此不再做详细介绍。
接下来，在步骤104，如图3所示，在电介质层202的至少一部分之上形成掩模层303。这里，可以在电介质层202的一部分之上形成掩模层303，也可以在整个电介质层202的表面之上形成掩模层303。在一个实施例中，掩模层303可以包括但不限于光刻胶。
在一个实现方式中，如图3所示，电介质层202可以包括分离的第一区域212和第二区域222，第一区域212的面积小于第二区域222的面积。在这种情况下，可以仅在第二区域222的至少一部分之上形成掩模层303。应理解，电介质层202可以包括多个面积不同的区域，在一些实现方案中，可以仅在电介质层202的面积相对较大的区域之上形成掩模层303，而面积相对较小的区域之上不形成掩模层303。
优选地，如图3所示，在电介质层202的至少一部分之上形成掩模层303之前，可以先在图2所示的衬底结构上沉积阻挡层301，从而使得掩模层303形成在阻挡层301之上。在一个实施例中，阻挡层301的材料例如可以包括TaN、Ta或由TaN和Ta组成的叠层。更优选地，在电介质层202的至少一部分之上形成掩模层303之前，还可以在阻挡层301上形成籽晶层302，从而使得掩模层303形成在籽晶层302上。这里，籽晶层302的材料例如可以是铜。优选地，阻挡层301和籽晶层302均可以通过物理气相沉积(PVD)的方式来形成。
之后，在步骤106，沉积金属层401，以填充开口203并覆盖电介质层202未被掩模层303覆盖的区域，如图4所示。这里，如果在整个电介质层202的表面之上形成了掩模层303，则电介质层202不包括未被掩模层303覆盖的区域，也即，金属层401仅填充开口203。例如，可以通过电镀(ECP)的方式沉积金属层401。优选地，金属层401可以包括铜。由于掩模层303覆盖了电介质层的至少一部分区域，这部分区域的面积通常较大，因此，电镀沉积的金属层401的量与现有的毯式沉积的金属层相比大幅度减小，从而减小了后续形成的互连结构中的应力，提高了互连结构的可靠性。
之后，在步骤108，去除掩模层303，如图5所示。例如可以通过剥离工艺去除掩模层303。
之后，在步骤110，执行平坦化工艺，例如化学机械抛光(CMP)，以使得剩余的金属层401的上表面与电介质层202的上表面基本齐平，如图6所示。这里，在电介质层202上具有阻挡层301和籽晶层302的情况下，平坦化工艺可以将电介质层202上的阻挡层301和籽晶层302一并去除。
本发明提供的互连结构的制造方法中，在电介质层的至少一部分之上形成了掩模层，从而减小了后续沉积的金属层的量，减小了金属层中的应力，改善了衬底翘曲的问题，提高了互连结构的可靠性和稳定性。另外，掩模层覆盖的电介质层上没有沉积金属层，这也更便于平坦化工艺的进行，降低了平坦化工艺的难度。
本发明提供的方法尤其适于在填充互连结构的开口时需要沉积比较厚的金属层的工艺。
至此，已经详细描述了根据本发明实施例的互连结构的制造方法。为了避免遮蔽本发明的构思，没有描述本领域所公知的一些细节，本领域技术人员根据上面的描述，完全可以明白如何实施这里公开的技术方案。另外，本说明书公开所教导的各实施例可以自由组合。本领域的技术人员应该理解，可以对上面说明的实施例进行多种修改而不脱离如所附权利要求限定的本发明的精神和范围。

Claims (9)

1.一种互连结构的制造方法，其特征在于，包括：
提供衬底结构，所述衬底结构包括衬底和在所述衬底上的电介质层，所述电介质层具有延伸到所述衬底的开口，所述电介质层包括分离的第一区域和第二区域，所述第一区域的面积小于所述第二区域的面积，所述电介质层不具有延伸到所述衬底、且与所述开口不同的其他开口；
在所述第二区域的至少一部分之上形成掩模层，所述掩模层不形成在所述第一区域之上；
沉积金属层，以填充所述开口并覆盖所述电介质层未被所述掩模层覆盖的区域；
去除所述掩模层；
执行平坦化工艺，以使得剩余的金属层的上表面与所述电介质层的上表面基本齐平。
2.根据权利要求1所述的方法，其特征在于，在所述第二区域的至少一部分之上形成掩模层之前，还包括：
在所述衬底结构上沉积阻挡层，所述掩模层形成在所述阻挡层之上。
3.根据权利要求2所述的方法，其特征在于，在所述第二区域的至少一部分之上形成掩模层之前，还包括：
在所述阻挡层上形成籽晶层，所述掩模层形成在所述籽晶层上。
4.根据权利要求1所述的方法，其特征在于，所述沉积金属层包括：
通过电镀的方式沉积所述金属层。
5.根据权利要求1所述的方法，其特征在于，所述掩模层包括光刻胶。
6.根据权利要求1所述的方法，其特征在于，所述金属层包括铜。
7.根据权利要求1所述的方法，其特征在于，所述平坦化工艺包括化学机械抛光。
8.根据权利要求1-7任意一项所述的方法，其特征在于，所述开口包括大马士革单镶嵌结构的开口。
9.根据权利要求1-7任意一项所述的方法，其特征在于，所述开口包括大马士革双镶嵌结构的开口。
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