JP2010509770A5 - - Google Patents

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JP2010509770A5
JP2010509770A5 JP2009536251A JP2009536251A JP2010509770A5 JP 2010509770 A5 JP2010509770 A5 JP 2010509770A5 JP 2009536251 A JP2009536251 A JP 2009536251A JP 2009536251 A JP2009536251 A JP 2009536251A JP 2010509770 A5 JP2010509770 A5 JP 2010509770A5
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semiconductor layer
electrode
region
implanted
layer
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JP2009536251A
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JP2010509770A (ja
JP5270562B2 (ja
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Priority claimed from US11/556,871 external-priority patent/US8823057B2/en
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JP2009536251A 2006-11-06 2007-11-01 埋込み層に低抵抗コンタクトを形成する打込み領域を含んだ半導体デバイスの製作方法および関連したデバイス Active JP5270562B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/556,871 US8823057B2 (en) 2006-11-06 2006-11-06 Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
US11/556,871 2006-11-06
PCT/US2007/023095 WO2008057392A2 (en) 2006-11-06 2007-11-01 Methods of fabricating semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices

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JP2013099518A Division JP5926216B2 (ja) 2006-11-06 2013-05-09 埋込み層に低抵抗コンタクトを形成する打込み領域を含んだ半導体デバイスの製作方法および関連したデバイス

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JP2010509770A JP2010509770A (ja) 2010-03-25
JP2010509770A5 true JP2010509770A5 (enExample) 2012-01-26
JP5270562B2 JP5270562B2 (ja) 2013-08-21

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JP2009536251A Active JP5270562B2 (ja) 2006-11-06 2007-11-01 埋込み層に低抵抗コンタクトを形成する打込み領域を含んだ半導体デバイスの製作方法および関連したデバイス
JP2013099518A Active JP5926216B2 (ja) 2006-11-06 2013-05-09 埋込み層に低抵抗コンタクトを形成する打込み領域を含んだ半導体デバイスの製作方法および関連したデバイス

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JP2013099518A Active JP5926216B2 (ja) 2006-11-06 2013-05-09 埋込み層に低抵抗コンタクトを形成する打込み領域を含んだ半導体デバイスの製作方法および関連したデバイス

Country Status (7)

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US (2) US8823057B2 (enExample)
EP (1) EP2084733B1 (enExample)
JP (2) JP5270562B2 (enExample)
KR (1) KR101344972B1 (enExample)
CN (1) CN101611473B (enExample)
CA (1) CA2666519C (enExample)
WO (1) WO2008057392A2 (enExample)

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
US9773877B2 (en) 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
US9040398B2 (en) * 2006-05-16 2015-05-26 Cree, Inc. Method of fabricating seminconductor devices including self aligned refractory contacts
JP5183913B2 (ja) * 2006-11-24 2013-04-17 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
US7875537B2 (en) * 2007-08-29 2011-01-25 Cree, Inc. High temperature ion implantation of nitride based HEMTs
JP5369434B2 (ja) * 2007-12-21 2013-12-18 サンケン電気株式会社 双方向スイッチ
JP5510325B2 (ja) * 2008-08-06 2014-06-04 日本電気株式会社 電界効果トランジスタ
WO2010016212A1 (ja) * 2008-08-06 2010-02-11 日本電気株式会社 電界効果トランジスタの製造方法
US8674409B2 (en) * 2008-12-26 2014-03-18 Renesas Electronics Corporation Heterojunction field effect transistor, method for producing heterojunction field effect transistor, and electronic device
US7915704B2 (en) * 2009-01-26 2011-03-29 Freescale Semiconductor, Inc. Schottky diode
JP5568891B2 (ja) * 2009-06-03 2014-08-13 日本電気株式会社 ヘテロ接合電界効果トランジスタ、その製造方法
JP2011210751A (ja) * 2010-03-26 2011-10-20 Nec Corp Ｉｉｉ族窒化物半導体素子、ｉｉｉ族窒化物半導体素子の製造方法、および電子装置
JP2012033689A (ja) * 2010-07-30 2012-02-16 Sumitomo Electric Device Innovations Inc 半導体装置の製造方法
KR20120032258A (ko) * 2010-09-28 2012-04-05 삼성엘이디 주식회사 질화갈륨계 반도체소자 및 그 제조방법
US8895993B2 (en) 2011-01-31 2014-11-25 Taiwan Semiconductor Manufacturing Company, Ltd. Low gate-leakage structure and method for gallium nitride enhancement mode transistor
WO2015047421A1 (en) 2013-09-30 2015-04-02 Hrl Laboratories, Llc Normally-off iii-nitride transistors with high threshold-voltage and low on-resistance
US8697505B2 (en) 2011-09-15 2014-04-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming a semiconductor structure
JP6054620B2 (ja) * 2012-03-29 2016-12-27 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
US9337332B2 (en) * 2012-04-25 2016-05-10 Hrl Laboratories, Llc III-Nitride insulating-gate transistors with passivation
US9111868B2 (en) * 2012-06-26 2015-08-18 Freescale Semiconductor, Inc. Semiconductor device with selectively etched surface passivation
US10825924B2 (en) 2012-06-26 2020-11-03 Nxp Usa, Inc. Semiconductor device with selectively etched surface passivation
US10522670B2 (en) 2012-06-26 2019-12-31 Nxp Usa, Inc. Semiconductor device with selectively etched surface passivation
EP2747143A1 (en) * 2012-12-19 2014-06-25 Nxp B.V. GaN HEMTs and GaN diodes
US10164038B2 (en) 2013-01-30 2018-12-25 Taiwan Semiconductor Manufacturing Company, Ltd. Method of implanting dopants into a group III-nitride structure and device formed
JP5940481B2 (ja) * 2013-03-22 2016-06-29 株式会社東芝 半導体装置
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9679981B2 (en) * 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US9768259B2 (en) * 2013-07-26 2017-09-19 Cree, Inc. Controlled ion implantation into silicon carbide using channeling and devices fabricated using controlled ion implantation into silicon carbide using channeling
TWI555209B (zh) * 2013-07-29 2016-10-21 高效電源轉換公司 具有降低的輸出電容之氮化鎵裝置及其製法
TWI602308B (zh) * 2013-12-17 2017-10-11 國立清華大學 蕭特基二極體元件
WO2015131846A1 (en) * 2014-03-06 2015-09-11 The Hong Kong University Of Science And Technology P-doping-free schottky-on-heterojunction light-emitting diode and high-electron-mobility light-emitting transistor
US10276712B2 (en) 2014-05-29 2019-04-30 Hrl Laboratories, Llc III-nitride field-effect transistor with dual gates
US9601574B2 (en) * 2014-12-29 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. V-shaped epitaxially formed semiconductor layer
US9812532B1 (en) 2015-08-28 2017-11-07 Hrl Laboratories, Llc III-nitride P-channel transistor
US20170069723A1 (en) * 2015-09-08 2017-03-09 M/A-Com Technology Solutions Holdings, Inc. Iii-nitride semiconductor structures comprising multiple spatially patterned implanted species
JP6623684B2 (ja) * 2015-10-29 2019-12-25 富士通株式会社 半導体装置及びその製造方法、電源装置、高周波増幅器
WO2017087197A1 (en) 2015-11-19 2017-05-26 Hrl Laboratories, Llc Iii-nitride field-effect transistor with dual gates
US10128364B2 (en) 2016-03-28 2018-11-13 Nxp Usa, Inc. Semiconductor devices with an enhanced resistivity region and methods of fabrication therefor
US10354879B2 (en) * 2016-06-24 2019-07-16 Cree, Inc. Depletion mode semiconductor devices including current dependent resistance
US9917171B2 (en) * 2016-07-21 2018-03-13 International Business Machines Corporation Low-resistive, CMOS-compatible, Au-free ohmic contact to N—InP
US10170604B2 (en) * 2016-08-08 2019-01-01 Atomera Incorporated Method for making a semiconductor device including a resonant tunneling diode with electron mean free path control layers
EP3501033B1 (en) * 2016-08-18 2025-09-24 Raytheon Company Semiconductor material growth of a high resistivity nitride buffer layer using ion implantation
JP6669029B2 (ja) * 2016-09-28 2020-03-18 豊田合成株式会社 半導体装置の製造方法
JP6629252B2 (ja) * 2017-02-01 2020-01-15 株式会社東芝 半導体装置の製造方法
JP6327379B1 (ja) * 2017-04-03 2018-05-23 富士電機株式会社 窒化ガリウム半導体装置および窒化ガリウム半導体装置の製造方法
JP6834709B2 (ja) * 2017-04-03 2021-02-24 住友電気工業株式会社 窒化珪素パッシベーション膜の成膜方法及び半導体装置の製造方法
JP6736513B2 (ja) 2017-04-24 2020-08-05 株式会社東芝 半導体装置、電源回路、及び、コンピュータ
JP6920656B2 (ja) * 2017-06-07 2021-08-18 パナソニックＩｐマネジメント株式会社 半導体電極及びそれを備えたデバイス、並びに、半導体電極の製造方法
WO2019009111A1 (ja) * 2017-07-07 2019-01-10 パナソニックＩｐマネジメント株式会社 半導体装置およびその製造方法
CN108597997B (zh) * 2018-02-28 2021-03-23 中国电子科技集团公司第十三研究所 GaN基器件欧姆接触电极的制备方法
US11404407B2 (en) * 2018-06-22 2022-08-02 Intel Corporation Implants to enlarge Schottky diode cross-sectional area for lateral current conduction
CN109216442A (zh) * 2018-09-11 2019-01-15 苏州汉骅半导体有限公司 半导体结构制造方法
JP7056532B2 (ja) * 2018-11-29 2022-04-19 豊田合成株式会社 ｐ型ＩＩＩ族窒化物半導体の製造方法
US11476359B2 (en) * 2019-03-18 2022-10-18 Wolfspeed, Inc. Structures for reducing electron concentration and process for reducing electron concentration
GB2594308B (en) 2020-04-23 2022-06-08 X Fab Dresden Gmbh & Co Kg Semiconductor contact structures
CN111613527A (zh) * 2020-05-20 2020-09-01 南京大学 一种基于Mg离子注入与高温退火工艺实现氮化镓p型掺杂的方法
US11749726B2 (en) 2020-10-27 2023-09-05 Wolfspeed, Inc. Field effect transistor with source-connected field plate
US11502178B2 (en) 2020-10-27 2022-11-15 Wolfspeed, Inc. Field effect transistor with at least partially recessed field plate
US12408403B2 (en) 2020-10-27 2025-09-02 Macom Technology Solutions Holdings, Inc. Field effect transistor with stacked unit subcell structure
US11658234B2 (en) 2020-10-27 2023-05-23 Wolfspeed, Inc. Field effect transistor with enhanced reliability
US12266721B2 (en) 2020-10-27 2025-04-01 Wolfspeed, Inc. Field effect transistor with multiple stepped field plate
US11791389B2 (en) 2021-01-08 2023-10-17 Wolfspeed, Inc. Radio frequency transistor amplifiers having widened and/or asymmetric source/drain regions for improved on-resistance performance
US11869964B2 (en) 2021-05-20 2024-01-09 Wolfspeed, Inc. Field effect transistors with modified access regions
US12446252B2 (en) * 2021-05-20 2025-10-14 Macom Technology Solutions Holdings, Inc. Transistors including semiconductor surface modification and related fabrication methods
PL439368A1 (pl) 2021-10-30 2023-05-02 Instytut Wysokich Ciśnień Polskiej Akademii Nauk Unipress Sposób wytwarzania obszaru o regularnie zmiennym współczynniku załamania światła w wybranej warstwie warstwowej struktury półprzewodnikowej
KR102745209B1 (ko) * 2022-01-26 2024-12-23 주식회사 세미콘웍스 식각공정 시 에칭 스탑을 검출하기 위한 면저항 측정센서 및 측정시스템
JP7693576B2 (ja) * 2022-02-09 2025-06-17 株式会社東芝 半導体装置、及び、半導体装置の製造方法
US20240194751A1 (en) * 2022-12-09 2024-06-13 Wolfspeed, Inc. Transistor devices including self-aligned ohmic contacts and contact regions and related fabrication methods
WO2024204055A1 (ja) * 2023-03-30 2024-10-03 ヌヴォトンテクノロジージャパン株式会社 半導体装置及びその製造方法
CN119767726A (zh) * 2024-12-31 2025-04-04 广东省科学院半导体研究所 一种氮化镓器件制备方法及氮化镓器件

Family Cites Families (196)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3919656A (en) 1973-04-23 1975-11-11 Nathan O Sokal High-efficiency tuned switching power amplifier
US3955160A (en) 1975-04-30 1976-05-04 Rca Corporation Surface acoustic wave device
FR2465317A2 (fr) 1979-03-28 1981-03-20 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
EP0033037B1 (en) 1979-12-28 1990-03-21 Fujitsu Limited Heterojunction semiconductor devices
US4947232A (en) 1980-03-22 1990-08-07 Sharp Kabushiki Kaisha High voltage MOS transistor
NL8103218A (nl) 1981-07-06 1983-02-01 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode.
JPS58197910A (ja) 1982-05-14 1983-11-17 Hitachi Ltd 弾性表面波素子
JPS594084A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置の製造方法
US4551905A (en) 1982-12-09 1985-11-12 Cornell Research Foundation, Inc. Fabrication of metal lines for semiconductor devices
JPH088350B2 (ja) 1985-04-08 1996-01-29 日本電気株式会社 半導体装置
US4755867A (en) 1986-08-15 1988-07-05 American Telephone And Telegraph Company, At&T Bell Laboratories Vertical Enhancement-mode Group III-V compound MISFETs
US4788156A (en) 1986-09-24 1988-11-29 Microwave Technology, Inc. Subchannel doping to reduce short-gate effects in field effect transistors
JPH0750781B2 (ja) * 1987-03-18 1995-05-31 富士通株式会社 化合物半導体集積回路装置
US5011549A (en) 1987-10-26 1991-04-30 North Carolina State University Homoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereon
US4912064A (en) 1987-10-26 1990-03-27 North Carolina State University Homoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereon
US4912063A (en) 1987-10-26 1990-03-27 North Carolina State University Growth of beta-sic thin films and semiconductor devices fabricated thereon
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US5411914A (en) 1988-02-19 1995-05-02 Massachusetts Institute Of Technology III-V based integrated circuits having low temperature growth buffer or passivation layers
EP0334006A1 (en) 1988-02-22 1989-09-27 Siemens Aktiengesellschaft Stacked channel heterojunction fet
US5196359A (en) 1988-06-30 1993-03-23 Texas Instruments Incorporated Method of forming heterostructure field effect transistor
EP0353805B1 (en) 1988-08-05 1993-03-03 Agfa-Gevaert N.V. Reproduction of x-ray images with photostimulable phosphor
US4884001A (en) 1988-12-13 1989-11-28 United Technologies Corporation Monolithic electro-acoustic device having an acoustic charge transport device integrated with a transistor
US5204278A (en) * 1989-08-11 1993-04-20 Kabushiki Kaisha Toshiba Method of making MES field effect transistor using III-V compound semiconductor
US4946547A (en) 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5053348A (en) 1989-12-01 1991-10-01 Hughes Aircraft Company Fabrication of self-aligned, t-gate hemt
US5128279A (en) 1990-03-05 1992-07-07 Vlsi Technology, Inc. Charge neutralization using silicon-enriched oxide layer
US5057897A (en) 1990-03-05 1991-10-15 Vlsi Technology, Inc. Charge neutralization using silicon-enriched oxide layer
US5210051A (en) 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
US5172197A (en) 1990-04-11 1992-12-15 Hughes Aircraft Company Hemt structure with passivated donor layer
US5292501A (en) 1990-06-25 1994-03-08 Degenhardt Charles R Use of a carboxy-substituted polymer to inhibit plaque formation without tooth staining
US5057564A (en) 1990-07-23 1991-10-15 Exxon Research And Engineering Company Cyclic carbonyl containing polymers
US5236547A (en) * 1990-09-25 1993-08-17 Kabushiki Kaisha Toshiba Method of forming a pattern in semiconductor device manufacturing process
US5200022A (en) 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
US5223458A (en) 1990-12-18 1993-06-29 Raytheon Company Method of manufacturing a III-V semiconductor device using a self-biased substrate and a plasma containing an electronegative species
US5155062A (en) 1990-12-20 1992-10-13 Cree Research, Inc. Method for silicon carbide chemical vapor deposition using levitated wafer system
US5192987A (en) 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
US5270554A (en) 1991-06-14 1993-12-14 Cree Research, Inc. High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide
JPH0521793A (ja) 1991-07-09 1993-01-29 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5254862A (en) * 1991-08-14 1993-10-19 Kobe Steel U.S.A., Inc. Diamond field-effect transistor with a particular boron distribution profile
US5265267A (en) 1991-08-29 1993-11-23 Motorola, Inc. Integrated circuit including a surface acoustic wave transformer and a balanced mixer
US5306662A (en) 1991-11-08 1994-04-26 Nichia Chemical Industries, Ltd. Method of manufacturing P-type compound semiconductor
JP3352712B2 (ja) 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
EP0549373B1 (en) 1991-12-25 1995-05-17 Nec Corporation Tunnel transistor and method of manufacturing same
JPH05183381A (ja) 1991-12-27 1993-07-23 Nippon Steel Corp 高周波回路基板および高周波回路素子
JPH05275463A (ja) 1992-03-30 1993-10-22 Matsushita Electric Ind Co Ltd 半導体装置
JPH05326561A (ja) 1992-05-22 1993-12-10 Nec Corp 電界効果トランジスタの製造方法
US5343054A (en) * 1992-09-14 1994-08-30 Kabushiki Kaisha Toshiba Semiconductor light-detection device with recombination rates
JPH06224225A (ja) 1993-01-27 1994-08-12 Fujitsu Ltd 電界効果半導体装置
JPH06267991A (ja) 1993-03-12 1994-09-22 Hitachi Ltd 半導体装置およびその製造方法
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5686737A (en) 1994-09-16 1997-11-11 Cree Research, Inc. Self-aligned field-effect transistor for high frequency applications
US5592501A (en) 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5576589A (en) 1994-10-13 1996-11-19 Kobe Steel Usa, Inc. Diamond surface acoustic wave devices
US5670798A (en) 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
US5739554A (en) 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
US6002148A (en) 1995-06-30 1999-12-14 Motorola, Inc. Silicon carbide transistor and method
US5569937A (en) 1995-08-28 1996-10-29 Motorola High breakdown voltage silicon carbide transistor
US5569943A (en) 1995-09-01 1996-10-29 The United States Of America As Represented By The Secretary Of The Army Field effect real space transistor
JPH09139494A (ja) 1995-11-16 1997-05-27 Mitsubishi Electric Corp 半導体装置の製造方法，及び半導体装置
KR100195269B1 (ko) 1995-12-22 1999-06-15 윤종용 액정표시장치의 제조방법
US5915164A (en) 1995-12-28 1999-06-22 U.S. Philips Corporation Methods of making high voltage GaN-A1N based semiconductor devices
DE19600116C2 (de) 1996-01-03 2001-03-15 Siemens Ag Doppelheterostruktur-HEMT
JPH09232827A (ja) 1996-02-21 1997-09-05 Oki Electric Ind Co Ltd 半導体装置及び送受信切り替え型アンテナスイッチ回路
JPH1050982A (ja) 1996-07-31 1998-02-20 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
US6936839B2 (en) 1996-10-16 2005-08-30 The University Of Connecticut Monolithic integrated circuit including a waveguide and quantum well inversion channel devices and a method of fabricating same
US5929467A (en) 1996-12-04 1999-07-27 Sony Corporation Field effect transistor with nitride compound
JP3767759B2 (ja) * 1997-02-07 2006-04-19 株式会社村田製作所 電界効果型半導体素子
JP3156620B2 (ja) 1997-02-12 2001-04-16 日本電気株式会社 電界効果トランジスタ及びその製造方法
US6217662B1 (en) 1997-03-24 2001-04-17 Cree, Inc. Susceptor designs for silicon carbide thin films
US6448648B1 (en) 1997-03-27 2002-09-10 The United States Of America As Represented By The Secretary Of The Navy Metalization of electronic semiconductor devices
JPH10335595A (ja) * 1997-03-31 1998-12-18 Sharp Corp 増幅器用半導体素子、増幅器用半導体素子の製造方法および増幅器用半導体装置
JPH10335637A (ja) 1997-05-30 1998-12-18 Sony Corp ヘテロ接合電界効果トランジスタ
JP3958404B2 (ja) 1997-06-06 2007-08-15 三菱電機株式会社 横型高耐圧素子を有する半導体装置
JP3120756B2 (ja) 1997-06-16 2000-12-25 日本電気株式会社 電界効果トランジスタ及びその製造方法
US6316820B1 (en) 1997-07-25 2001-11-13 Hughes Electronics Corporation Passivation layer and process for semiconductor devices
JPH1154527A (ja) 1997-07-30 1999-02-26 Fujitsu Ltd 電界効果トランジスタおよびその製造方法
JP3457511B2 (ja) 1997-07-30 2003-10-20 株式会社東芝 半導体装置及びその製造方法
US5943565A (en) * 1997-09-05 1999-08-24 Advanced Micro Devices, Inc. CMOS processing employing separate spacers for independently optimized transistor performance
US6242327B1 (en) 1997-09-19 2001-06-05 Fujitsu Limited Compound semiconductor device having a reduced source resistance
JP3653652B2 (ja) * 1997-09-25 2005-06-02 富士通株式会社 半導体装置
US6201262B1 (en) 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US6063186A (en) 1997-12-17 2000-05-16 Cree, Inc. Growth of very uniform silicon carbide epitaxial layers
US6346451B1 (en) 1997-12-24 2002-02-12 Philips Electronics North America Corporation Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode
DE19800647C1 (de) 1998-01-09 1999-05-27 Siemens Ag SOI-Hochspannungsschalter
JP3372470B2 (ja) 1998-01-20 2003-02-04 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体装置
US6150680A (en) 1998-03-05 2000-11-21 Welch Allyn, Inc. Field effect semiconductor device having dipole barrier
JPH11261053A (ja) 1998-03-09 1999-09-24 Furukawa Electric Co Ltd:The 高移動度トランジスタ
US6086673A (en) 1998-04-02 2000-07-11 Massachusetts Institute Of Technology Process for producing high-quality III-V nitride substrates
US6020226A (en) * 1998-04-14 2000-02-01 The United States Of America As Represented By The Secretary Of The Air Force Single layer integrated metal process for enhancement mode field-effect transistor
US6316793B1 (en) * 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
JP3111985B2 (ja) 1998-06-16 2000-11-27 日本電気株式会社 電界効果型トランジスタ
US6246076B1 (en) 1998-08-28 2001-06-12 Cree, Inc. Layered dielectric on silicon carbide semiconductor structures
JP3180776B2 (ja) 1998-09-22 2001-06-25 日本電気株式会社 電界効果型トランジスタ
KR100316383B1 (ko) 1998-10-30 2002-02-19 윤덕용 모노리딕직접회로위에박막또는후막단결정압전소자를집적한단일칩라디오구조및그제조방법
US6297092B1 (en) 1998-12-02 2001-10-02 Micron Technology, Inc. Method and structure for an oxide layer overlaying an oxidation-resistant layer
US6495409B1 (en) 1999-01-26 2002-12-17 Agere Systems Inc. MOS transistor having aluminum nitride gate structure and method of manufacturing same
JP3209270B2 (ja) 1999-01-29 2001-09-17 日本電気株式会社 ヘテロ接合電界効果トランジスタ
US6518637B1 (en) 1999-04-08 2003-02-11 Wayne State University Cubic (zinc-blende) aluminum nitride
US6218680B1 (en) 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
US6396080B2 (en) 1999-05-18 2002-05-28 Cree, Inc Semi-insulating silicon carbide without vanadium domination
US6265727B1 (en) 1999-06-09 2001-07-24 Cree Lighting Company Solar blind photodiode having an active region with a larger bandgap than one or both if its surrounding doped regions
JP2001007379A (ja) 1999-06-24 2001-01-12 Sharp Corp 窒化ガリウム系化合物半導体受光素子
US6300706B1 (en) 1999-07-14 2001-10-09 The United States Of America As Represented By The Secretary Of The Army Compound semiconductor monolithic frequency sources and actuators
JP2001085670A (ja) 1999-09-14 2001-03-30 Nec Corp 電界効果型トランジスタ及びその製造方法
US6639255B2 (en) 1999-12-08 2003-10-28 Matsushita Electric Industrial Co., Ltd. GaN-based HFET having a surface-leakage reducing cap layer
JP4592938B2 (ja) 1999-12-08 2010-12-08 パナソニック株式会社 半導体装置
JP3393602B2 (ja) 2000-01-13 2003-04-07 松下電器産業株式会社 半導体装置
US6586781B2 (en) 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
JP4667556B2 (ja) 2000-02-18 2011-04-13 古河電気工業株式会社 縦型ＧａＮ系電界効果トランジスタ、バイポーラトランジスタと縦型ＧａＮ系電界効果トランジスタの製造方法
US6498111B1 (en) 2000-08-23 2002-12-24 Cree Lighting Company Fabrication of semiconductor materials and devices with controlled electrical conductivity
US6475889B1 (en) 2000-04-11 2002-11-05 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
GB2366104B (en) 2000-05-01 2002-10-23 Murata Manufacturing Co Surface acoustic wave device, shear bulk wave transducer, and longitudinal bulk wave transducer
US6686616B1 (en) 2000-05-10 2004-02-03 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors
JP4022708B2 (ja) 2000-06-29 2007-12-19 日本電気株式会社 半導体装置
JP4186032B2 (ja) 2000-06-29 2008-11-26 日本電気株式会社 半導体装置
US6515316B1 (en) 2000-07-14 2003-02-04 Trw Inc. Partially relaxed channel HEMT device
TWI257179B (en) 2000-07-17 2006-06-21 Fujitsu Quantum Devices Ltd High-speed compound semiconductor device operable at large output power with minimum leakage current
US6555946B1 (en) 2000-07-24 2003-04-29 Motorola, Inc. Acoustic wave device and process for forming the same
US6690042B2 (en) 2000-09-27 2004-02-10 Sensor Electronic Technology, Inc. Metal oxide semiconductor heterostructure field effect transistor
US6548333B2 (en) 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
JP3428962B2 (ja) 2000-12-19 2003-07-22 古河電気工業株式会社 ＧａＮ系高移動度トランジスタ
TW466768B (en) 2000-12-30 2001-12-01 Nat Science Council An In0.34Al0.66As0.85Sb0.15/InP HFET utilizing InP channels
US6569250B2 (en) 2001-01-08 2003-05-27 Cree, Inc. Gas-driven rotation apparatus and method for forming silicon carbide layers
US6828879B2 (en) 2001-02-16 2004-12-07 Sanyo Electric Co., Ltd. Longitudinal coupled multiple mode surface acoustic wave filter
US6468878B1 (en) 2001-02-27 2002-10-22 Koninklijke Philips Electronics N.V. SOI LDMOS structure with improved switching characteristics
GB0107408D0 (en) 2001-03-23 2001-05-16 Koninkl Philips Electronics Nv Field effect transistor structure and method of manufacture
JP3648462B2 (ja) 2001-04-27 2005-05-18 沖電気工業株式会社 弾性表面波分波器
US6849882B2 (en) 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
US6706114B2 (en) 2001-05-21 2004-03-16 Cree, Inc. Methods of fabricating silicon carbide crystals
US6525378B1 (en) * 2001-06-13 2003-02-25 Advanced Micro Devices, Inc. Raised S/D region for optimal silicidation to control floating body effects in SOI devices
US6475857B1 (en) 2001-06-21 2002-11-05 Samsung Electronics Co., Ltd. Method of making a scalable two transistor memory device
US20030015708A1 (en) * 2001-07-23 2003-01-23 Primit Parikh Gallium nitride based diodes with low forward voltage and low reverse current operation
EP2267783B1 (en) 2001-07-24 2017-06-21 Cree, Inc. Insulating gate algan/gan hemt
US20030022412A1 (en) 2001-07-25 2003-01-30 Motorola, Inc. Monolithic semiconductor-piezoelectric device structures and electroacoustic charge transport devices
US20030030119A1 (en) 2001-08-13 2003-02-13 Motorola, Inc. Structure and method for improved piezo electric coupled component integrated devices
US6896738B2 (en) 2001-10-30 2005-05-24 Cree, Inc. Induction heating devices and methods for controllably heating an article
WO2003038905A2 (en) 2001-11-01 2003-05-08 Koninklijke Philips Electronics N.V. Lateral soi field-effect transistor
US7030428B2 (en) 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
KR100445904B1 (ko) 2001-12-12 2004-08-25 한국전자통신연구원 소스 필드 플레이트를 갖는 드레인 확장형 모스 전계 효과트랜지스터 및그 제조방법
JP4157707B2 (ja) 2002-01-16 2008-10-01 株式会社東芝 磁気メモリ
US7138291B2 (en) 2003-01-30 2006-11-21 Cree, Inc. Methods of treating a silicon carbide substrate for improved epitaxial deposition and resulting structures and devices
DE10206739C1 (de) 2002-02-18 2003-08-21 Infineon Technologies Ag Transistorbauelement
JP3908572B2 (ja) 2002-03-18 2007-04-25 株式会社東芝 半導体素子
JP3705431B2 (ja) 2002-03-28 2005-10-12 ユーディナデバイス株式会社 半導体装置及びその製造方法
US6797069B2 (en) 2002-04-08 2004-09-28 Cree, Inc. Gas driven planetary rotation apparatus and methods for forming silicon carbide layers
US6559513B1 (en) 2002-04-22 2003-05-06 M/A-Com, Inc. Field-plate MESFET
US6852615B2 (en) 2002-06-10 2005-02-08 Hrl Laboratories, Llc Ohmic contacts for high electron mobility transistors and a method of making the same
US6982204B2 (en) 2002-07-16 2006-01-03 Cree, Inc. Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
JP3790500B2 (ja) * 2002-07-16 2006-06-28 ユーディナデバイス株式会社 電界効果トランジスタ及びその製造方法
US6735492B2 (en) 2002-07-19 2004-05-11 International Business Machines Corporation Feedback method utilizing lithographic exposure field dimensions to predict process tool overlay settings
US20050189651A1 (en) * 2002-07-25 2005-09-01 Matsushita Elec. Ind. Co. Ltd. Contact formation method and semiconductor device
JP2004111910A (ja) * 2002-07-25 2004-04-08 Matsushita Electric Ind Co Ltd コンタクト形成方法および半導体装置
US6884704B2 (en) 2002-08-05 2005-04-26 Hrl Laboratories, Llc Ohmic metal contact and channel protection in GaN devices using an encapsulation layer
US20040021152A1 (en) 2002-08-05 2004-02-05 Chanh Nguyen Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate
JP2004093683A (ja) * 2002-08-29 2004-03-25 Casio Comput Co Ltd コンテンツ配信システム、及びプログラム
US6903385B2 (en) 2002-10-09 2005-06-07 Sensor Electronic Technology, Inc. Semiconductor structure having a textured nitride-based layer
JP4050128B2 (ja) * 2002-10-24 2008-02-20 松下電器産業株式会社 ヘテロ接合電界効果型トランジスタ及びその製造方法
JP4385206B2 (ja) 2003-01-07 2009-12-16 日本電気株式会社 電界効果トランジスタ
CN100388509C (zh) 2003-01-29 2008-05-14 株式会社东芝 功率半导体器件
US6716690B1 (en) * 2003-03-12 2004-04-06 Advanced Micro Devices, Inc. Uniformly doped source/drain junction in a double-gate MOSFET
JP4746825B2 (ja) 2003-05-15 2011-08-10 富士通株式会社 化合物半導体装置
JP4417677B2 (ja) 2003-09-19 2010-02-17 株式会社東芝 電力用半導体装置
US20050133816A1 (en) 2003-12-19 2005-06-23 Zhaoyang Fan III-nitride quantum-well field effect transistors
US7135715B2 (en) 2004-01-07 2006-11-14 Cree, Inc. Co-doping for fermi level control in semi-insulating Group III nitrides
US7045404B2 (en) * 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
US7033912B2 (en) 2004-01-22 2006-04-25 Cree, Inc. Silicon carbide on diamond substrates and related devices and methods
US7170111B2 (en) 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
JP4539105B2 (ja) 2004-02-12 2010-09-08 日立電線株式会社 窒化物半導体デバイスの製造方法
JP2005276978A (ja) * 2004-03-24 2005-10-06 Nissan Motor Co Ltd オーミック電極構造体の製造方法、オーミック電極構造体、半導体装置の製造方法および半導体装置
JP2005286135A (ja) * 2004-03-30 2005-10-13 Eudyna Devices Inc 半導体装置および半導体装置の製造方法
JP4869563B2 (ja) 2004-04-21 2012-02-08 新日本無線株式会社 窒化物半導体装置及びその製造方法
JP4398780B2 (ja) * 2004-04-30 2010-01-13 古河電気工業株式会社 ＧａＮ系半導体装置
US7432142B2 (en) 2004-05-20 2008-10-07 Cree, Inc. Methods of fabricating nitride-based transistors having regrown ohmic contact regions
US7084441B2 (en) 2004-05-20 2006-08-01 Cree, Inc. Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same
US7332795B2 (en) 2004-05-22 2008-02-19 Cree, Inc. Dielectric passivation for semiconductor devices
JP2006032911A (ja) * 2004-06-15 2006-02-02 Ngk Insulators Ltd 半導体積層構造、半導体素子およびｈｅｍｔ素子
JP5248743B2 (ja) * 2004-06-30 2013-07-31 アイメック 半導体装置および半導体装置の製造方法
JP2006032552A (ja) 2004-07-14 2006-02-02 Toshiba Corp 窒化物含有半導体装置
US7238560B2 (en) 2004-07-23 2007-07-03 Cree, Inc. Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
US20060017064A1 (en) 2004-07-26 2006-01-26 Saxler Adam W Nitride-based transistors having laterally grown active region and methods of fabricating same
US7312481B2 (en) 2004-10-01 2007-12-25 Texas Instruments Incorporated Reliable high-voltage junction field effect transistor and method of manufacture therefor
JP2006134935A (ja) * 2004-11-02 2006-05-25 Mitsubishi Electric Corp 半導体装置およびその製造方法
US7456443B2 (en) 2004-11-23 2008-11-25 Cree, Inc. Transistors having buried n-type and p-type regions beneath the source region
US7161194B2 (en) 2004-12-06 2007-01-09 Cree, Inc. High power density and/or linearity transistors
US7355215B2 (en) 2004-12-06 2008-04-08 Cree, Inc. Field effect transistors (FETs) having multi-watt output power at millimeter-wave frequencies
US7236053B2 (en) 2004-12-31 2007-06-26 Cree, Inc. High efficiency switch-mode power amplifier
JP4940557B2 (ja) * 2005-02-08 2012-05-30 日本電気株式会社 電界効果トランジスタ及びその製造方法
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
US7465967B2 (en) 2005-03-15 2008-12-16 Cree, Inc. Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions
US20060226442A1 (en) * 2005-04-07 2006-10-12 An-Ping Zhang GaN-based high electron mobility transistor and method for making the same
US8575651B2 (en) 2005-04-11 2013-11-05 Cree, Inc. Devices having thick semi-insulating epitaxial gallium nitride layer
US7626217B2 (en) 2005-04-11 2009-12-01 Cree, Inc. Composite substrates of conductive and insulating or semi-insulating group III-nitrides for group III-nitride devices
US7615774B2 (en) 2005-04-29 2009-11-10 Cree.Inc. Aluminum free group III-nitride based high electron mobility transistors
US7544963B2 (en) 2005-04-29 2009-06-09 Cree, Inc. Binary group III-nitride based high electron mobility transistors
US20090250785A1 (en) * 2008-04-02 2009-10-08 Thomas Joseph Krutsick Methods of forming a shallow base region of a bipolar transistor

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