JP2008521248A5 - - Google Patents

Download PDF

Info

Publication number
JP2008521248A5
JP2008521248A5 JP2007543022A JP2007543022A JP2008521248A5 JP 2008521248 A5 JP2008521248 A5 JP 2008521248A5 JP 2007543022 A JP2007543022 A JP 2007543022A JP 2007543022 A JP2007543022 A JP 2007543022A JP 2008521248 A5 JP2008521248 A5 JP 2008521248A5
Authority
JP
Japan
Prior art keywords
layer
group iii
electron mobility
high electron
mobility transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007543022A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008521248A (ja
JP5406452B2 (ja
Filing date
Publication date
Priority claimed from US10/996,249 external-priority patent/US7456443B2/en
Application filed filed Critical
Publication of JP2008521248A publication Critical patent/JP2008521248A/ja
Publication of JP2008521248A5 publication Critical patent/JP2008521248A5/ja
Application granted granted Critical
Publication of JP5406452B2 publication Critical patent/JP5406452B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2007543022A 2004-11-23 2005-08-31 窒化物ベースのトランジスタ及びトランジスタ構造体のキャップ層及び／又は不活性層並びにそれらの製造方法 Expired - Lifetime JP5406452B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/996,249 2004-11-23
US10/996,249 US7456443B2 (en) 2004-11-23 2004-11-23 Transistors having buried n-type and p-type regions beneath the source region
PCT/US2005/031272 WO2006057686A2 (en) 2004-11-23 2005-08-31 Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same

Publications (3)

Publication Number Publication Date
JP2008521248A JP2008521248A (ja) 2008-06-19
JP2008521248A5 true JP2008521248A5 (enExample) 2008-07-31
JP5406452B2 JP5406452B2 (ja) 2014-02-05

Family

ID=35457428

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007543022A Expired - Lifetime JP5406452B2 (ja) 2004-11-23 2005-08-31 窒化物ベースのトランジスタ及びトランジスタ構造体のキャップ層及び／又は不活性層並びにそれらの製造方法

Country Status (8)

Country Link
US (2) US7456443B2 (enExample)
EP (1) EP1817798B2 (enExample)
JP (1) JP5406452B2 (enExample)
KR (1) KR101124937B1 (enExample)
CN (1) CN101107713A (enExample)
CA (1) CA2588114A1 (enExample)
TW (1) TWI464876B (enExample)
WO (1) WO2006057686A2 (enExample)

Families Citing this family (159)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
US7612390B2 (en) 2004-02-05 2009-11-03 Cree, Inc. Heterojunction transistors including energy barriers
US9773877B2 (en) 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
US7417266B1 (en) 2004-06-10 2008-08-26 Qspeed Semiconductor Inc. MOSFET having a JFET embedded as a body diode
EP2273553B1 (en) * 2004-06-30 2020-02-12 IMEC vzw A method for fabricating AlGaN/GaN HEMT devices
US7456443B2 (en) 2004-11-23 2008-11-25 Cree, Inc. Transistors having buried n-type and p-type regions beneath the source region
KR100597649B1 (ko) * 2004-11-26 2006-07-05 삼성전자주식회사 베리어 메탈을 포함하는 반도체 디바이스의 제조방법 및그 구조
JP4869585B2 (ja) * 2004-12-08 2012-02-08 新日本無線株式会社 窒化物半導体装置の製造方法
US9640649B2 (en) * 2004-12-30 2017-05-02 Infineon Technologies Americas Corp. III-nitride power semiconductor with a field relaxation feature
US7436039B2 (en) * 2005-01-06 2008-10-14 Velox Semiconductor Corporation Gallium nitride semiconductor device
US11791385B2 (en) 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
US9331192B2 (en) * 2005-06-29 2016-05-03 Cree, Inc. Low dislocation density group III nitride layers on silicon carbide substrates and methods of making the same
US20070018198A1 (en) * 2005-07-20 2007-01-25 Brandes George R High electron mobility electronic device structures comprising native substrates and methods for making the same
JP2007048783A (ja) * 2005-08-05 2007-02-22 Matsushita Electric Ind Co Ltd ショットキーダイオード及びその製造方法
JP4751150B2 (ja) 2005-08-31 2011-08-17 株式会社東芝 窒化物系半導体装置
JP2007095858A (ja) * 2005-09-28 2007-04-12 Toshiba Ceramics Co Ltd 化合物半導体デバイス用基板およびそれを用いた化合物半導体デバイス
US8026568B2 (en) 2005-11-15 2011-09-27 Velox Semiconductor Corporation Second Schottky contact metal layer to improve GaN Schottky diode performance
US8044432B2 (en) * 2005-11-29 2011-10-25 The Hong Kong University Of Science And Technology Low density drain HEMTs
US7932539B2 (en) * 2005-11-29 2011-04-26 The Hong Kong University Of Science And Technology Enhancement-mode III-N devices, circuits, and methods
US7972915B2 (en) * 2005-11-29 2011-07-05 The Hong Kong University Of Science And Technology Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HFETs
US7338826B2 (en) * 2005-12-09 2008-03-04 The United States Of America As Represented By The Secretary Of The Navy Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs
JP4705482B2 (ja) * 2006-01-27 2011-06-22 パナソニック株式会社 トランジスタ
US7388236B2 (en) * 2006-03-29 2008-06-17 Cree, Inc. High efficiency and/or high power density wide bandgap transistors
JP2007329350A (ja) * 2006-06-08 2007-12-20 Matsushita Electric Ind Co Ltd 半導体装置
US20080067549A1 (en) * 2006-06-26 2008-03-20 Armin Dadgar Semiconductor component
US7504309B2 (en) * 2006-10-12 2009-03-17 International Business Machines Corporation Pre-silicide spacer removal
US7393746B2 (en) 2006-10-12 2008-07-01 International Business Machines Corporation Post-silicide spacer removal
JP4282708B2 (ja) * 2006-10-20 2009-06-24 株式会社東芝 窒化物系半導体装置
US8823057B2 (en) 2006-11-06 2014-09-02 Cree, Inc. Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices
JP4296195B2 (ja) * 2006-11-15 2009-07-15 シャープ株式会社 電界効果トランジスタ
JP2008124374A (ja) * 2006-11-15 2008-05-29 Sharp Corp 絶縁ゲート電界効果トランジスタ
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
US8878245B2 (en) * 2006-11-30 2014-11-04 Cree, Inc. Transistors and method for making ohmic contact to transistors
US8338861B2 (en) * 2007-01-10 2012-12-25 International Rectifier Corporation III-nitride semiconductor device with stepped gate trench and process for its manufacture
US20090321787A1 (en) * 2007-03-20 2009-12-31 Velox Semiconductor Corporation High voltage GaN-based heterojunction transistor structure and method of forming same
US7939853B2 (en) * 2007-03-20 2011-05-10 Power Integrations, Inc. Termination and contact structures for a high voltage GaN-based heterojunction transistor
US9484499B2 (en) * 2007-04-20 2016-11-01 Cree, Inc. Transparent ohmic contacts on light emitting diodes with carrier substrates
US9209281B2 (en) * 2007-04-23 2015-12-08 Infineon Technologies Ag Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etching
TWI460857B (zh) * 2007-08-03 2014-11-11 Univ Hong Kong Science & Techn 可靠之常關型iii族－氮化物主動裝置結構，以及相關方法與系統
JP5285252B2 (ja) * 2007-09-12 2013-09-11 新日本無線株式会社 窒化物半導体装置
JP4462330B2 (ja) * 2007-11-02 2010-05-12 住友電気工業株式会社 Ｉｉｉ族窒化物電子デバイス
US8368100B2 (en) 2007-11-14 2013-02-05 Cree, Inc. Semiconductor light emitting diodes having reflective structures and methods of fabricating same
EP2071509A1 (en) * 2007-12-13 2009-06-17 Gemalto SA Method and apparatus to mark a document using a combination between guilloches and watermarking, method and apparatus to read previous combination
US8076699B2 (en) * 2008-04-02 2011-12-13 The Hong Kong Univ. Of Science And Technology Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
US8519438B2 (en) 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
US20100084687A1 (en) * 2008-10-03 2010-04-08 The Hong Kong University Of Science And Technology Aluminum gallium nitride/gallium nitride high electron mobility transistors
US7898004B2 (en) 2008-12-10 2011-03-01 Transphorm Inc. Semiconductor heterostructure diodes
US8080820B2 (en) * 2009-03-16 2011-12-20 Intel Corporation Apparatus and methods for improving parallel conduction in a quantum well device
CN102365747B (zh) * 2009-04-08 2014-07-30 宜普电源转换公司 补偿门极misfet及其制造方法
JP5663000B2 (ja) * 2009-04-08 2015-02-04 エフィシエント パワー コンヴァーション コーポレーション 逆拡散抑制構造
US8741715B2 (en) 2009-04-29 2014-06-03 Cree, Inc. Gate electrodes for millimeter-wave operation and methods of fabrication
US8742459B2 (en) 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
CN102428555B (zh) * 2009-05-26 2014-04-09 住友化学株式会社 半导体基板、半导体基板的制造方法及电子器件
US9991360B2 (en) * 2009-06-26 2018-06-05 Cornell University Method for forming III-V semiconductor structures including aluminum-silicon nitride passivation
JP4700125B2 (ja) 2009-07-30 2011-06-15 住友電気工業株式会社 半導体装置およびその製造方法
US8390000B2 (en) 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
US8936976B2 (en) 2009-12-23 2015-01-20 Intel Corporation Conductivity improvements for III-V semiconductor devices
KR101774933B1 (ko) * 2010-03-02 2017-09-06 삼성전자 주식회사 듀얼 디플리션을 나타내는 고 전자 이동도 트랜지스터 및 그 제조방법
JP5604147B2 (ja) * 2010-03-25 2014-10-08 パナソニック株式会社 トランジスタ及びその製造方法
US8809904B2 (en) 2010-07-26 2014-08-19 Cree, Inc. Electronic device structure with a semiconductor ledge layer for surface passivation
WO2012014675A1 (ja) * 2010-07-29 2012-02-02 日本碍子株式会社 半導体素子、ｈｅｍｔ素子、および半導体素子の製造方法
EP2600394B1 (en) * 2010-07-29 2017-12-27 NGK Insulators, Ltd. Epitaxial substrate for semiconductor element and production method thereof
US8742460B2 (en) 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
US8716141B2 (en) 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
FR2974242B1 (fr) * 2011-04-14 2013-09-27 Thales Sa Amelioration des proprietes de transport dans les transistors hemts composes de semi-conducteurs bores a larges bande interdite (iii-b)-n
KR20120124101A (ko) * 2011-05-03 2012-11-13 삼성전자주식회사 고효율 질화계 이종접합 전계효과 트랜지스터
KR101813177B1 (ko) 2011-05-06 2017-12-29 삼성전자주식회사 고전자이동도 트랜지스터 및 그 제조방법
KR20130008280A (ko) * 2011-07-12 2013-01-22 삼성전자주식회사 안정성이 우수한 질화물계 반도체 소자
KR101259126B1 (ko) * 2011-07-25 2013-04-26 엘지전자 주식회사 질화물계 반도체 이종접합 반도체 소자 및 그 제조방법
KR20130014861A (ko) * 2011-08-01 2013-02-12 삼성전자주식회사 고 전자 이동도 트랜지스터 및 그 제조방법
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
JP5739774B2 (ja) * 2011-09-13 2015-06-24 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
JP5896667B2 (ja) * 2011-09-26 2016-03-30 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
JP5784440B2 (ja) * 2011-09-28 2015-09-24 トランスフォーム・ジャパン株式会社 半導体装置の製造方法及び半導体装置
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
CN102509569B (zh) * 2011-10-19 2014-04-16 西安电子科技大学 I层钒掺杂的碳化硅肖特基结型核电池及其制作方法
US9472633B1 (en) * 2011-11-28 2016-10-18 Qorvo Us, Inc. Transistor gate having an insulating layer support structure
US8633094B2 (en) 2011-12-01 2014-01-21 Power Integrations, Inc. GaN high voltage HFET with passivation plus gate dielectric multilayer structure
US8530978B1 (en) * 2011-12-06 2013-09-10 Hrl Laboratories, Llc High current high voltage GaN field effect transistors and method of fabricating same
US8940620B2 (en) 2011-12-15 2015-01-27 Power Integrations, Inc. Composite wafer for fabrication of semiconductor devices
WO2013096821A1 (en) * 2011-12-21 2013-06-27 Massachusetts Institute Of Technology Aluminum nitride based semiconductor devices
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
KR101256467B1 (ko) * 2012-02-06 2013-04-19 삼성전자주식회사 질화물계 이종접합 반도체 소자 및 그 제조 방법
WO2013155108A1 (en) 2012-04-09 2013-10-17 Transphorm Inc. N-polar iii-nitride transistors
US8860091B2 (en) * 2012-04-16 2014-10-14 Hrl Laboratories, Llc Group III-N HFET with a graded barrier layer
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
US8803246B2 (en) 2012-07-16 2014-08-12 Transphorm Inc. Semiconductor electronic components with integrated current limiters
US8900985B2 (en) * 2012-10-15 2014-12-02 Infineon Technologies Austria Ag Self-doped ohmic contacts for compound semiconductor devices
US8768271B1 (en) * 2012-12-19 2014-07-01 Intel Corporation Group III-N transistors on nanoscale template structures
JP6161910B2 (ja) * 2013-01-30 2017-07-12 ルネサスエレクトロニクス株式会社 半導体装置
US9171730B2 (en) 2013-02-15 2015-10-27 Transphorm Inc. Electrodes for semiconductor devices and methods of forming the same
KR102113255B1 (ko) * 2013-02-22 2020-05-20 삼성전자주식회사 그래핀 적층 구조체의 제조방법, 및 그래핀 적층 구조체와 이를 구비하는 전기소자
US9306009B2 (en) * 2013-02-25 2016-04-05 Cree, Inc. Mix doping of a semi-insulating Group III nitride
US8928037B2 (en) 2013-02-28 2015-01-06 Power Integrations, Inc. Heterostructure power transistor with AlSiN passivation layer
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9245993B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
US9443737B2 (en) * 2013-04-03 2016-09-13 Texas Instruments Incorporated Method of forming metal contacts in the barrier layer of a group III-N HEMT
CN103311284B (zh) * 2013-06-06 2015-11-25 苏州晶湛半导体有限公司 半导体器件及其制作方法
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9755059B2 (en) 2013-06-09 2017-09-05 Cree, Inc. Cascode structures with GaN cap layers
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
CN105453238B (zh) * 2013-06-11 2020-11-10 斯派克迈特股份有限公司 用于半导体制造过程和/或方法的化学组合物、使用其制得的装置
US9443938B2 (en) 2013-07-19 2016-09-13 Transphorm Inc. III-nitride transistor including a p-type depleting layer
JP2015046444A (ja) * 2013-08-27 2015-03-12 ルネサスエレクトロニクス株式会社 半導体装置
US10276712B2 (en) 2014-05-29 2019-04-30 Hrl Laboratories, Llc III-nitride field-effect transistor with dual gates
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
CN104167444A (zh) * 2014-08-27 2014-11-26 电子科技大学 一种具有局部帽层的氮化镓基异质结场效应晶体管
CN104269434B (zh) * 2014-09-19 2018-01-05 苏州捷芯威半导体有限公司 一种高电子迁移率晶体管
CN104465746B (zh) * 2014-09-28 2018-08-10 苏州能讯高能半导体有限公司 一种hemt器件及其制造方法
USD826871S1 (en) 2014-12-11 2018-08-28 Cree, Inc. Light emitting diode device
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
US10177061B2 (en) * 2015-02-12 2019-01-08 Infineon Technologies Austria Ag Semiconductor device
US20160293596A1 (en) 2015-03-30 2016-10-06 Texas Instruments Incorporated Normally off iii-nitride transistor
US9985121B1 (en) * 2015-04-13 2018-05-29 Hrl Laboratories, Llc P-type diamond gate-GaN heterojunction FET structure
JP2017011088A (ja) * 2015-06-22 2017-01-12 住友電工デバイス・イノベーション株式会社 半導体装置
US9812532B1 (en) 2015-08-28 2017-11-07 Hrl Laboratories, Llc III-nitride P-channel transistor
CN105261643B (zh) * 2015-09-22 2018-04-24 宁波大学 一种高击穿电压氮化镓基高电子迁移率晶体管
US10978568B2 (en) 2015-09-25 2021-04-13 Intel Corporation Passivation of transistor channel region interfaces
DE102015117394B4 (de) * 2015-10-13 2020-06-18 Infineon Technologies Austria Ag Halbleiterbauelement
WO2017087197A1 (en) 2015-11-19 2017-05-26 Hrl Laboratories, Llc Iii-nitride field-effect transistor with dual gates
CN108604597B (zh) 2016-01-15 2021-09-17 创世舫电子有限公司 具有al(1-x)sixo栅极绝缘体的增强模式iii-氮化物器件
CN105931964A (zh) * 2016-05-13 2016-09-07 中国科学院半导体研究所 一种增强型AlGaN/GaN晶体管的制备方法
WO2017210323A1 (en) 2016-05-31 2017-12-07 Transphorm Inc. Iii-nitride devices including a graded depleting layer
US10354879B2 (en) * 2016-06-24 2019-07-16 Cree, Inc. Depletion mode semiconductor devices including current dependent resistance
JP6950185B2 (ja) * 2017-01-12 2021-10-13 三菱電機株式会社 高電子移動度トランジスタの製造方法、高電子移動度トランジスタ
CN107248528B (zh) * 2017-06-09 2019-10-11 西安电子科技大学 低频率损耗GaN基微波功率器件及其制作方法
CN110754002B (zh) * 2017-06-19 2024-03-19 埃皮根股份有限公司 高电子迁移率晶体管
US10651306B2 (en) * 2017-08-25 2020-05-12 Hrl Laboratories, Llc Digital alloy based back barrier for P-channel nitride transistors
CN109659361B (zh) 2017-10-12 2022-03-04 电力集成公司 用于异质结器件的栅极堆叠体
CN111406306B (zh) * 2017-12-01 2024-03-12 三菱电机株式会社 半导体装置的制造方法、半导体装置
US20190305122A1 (en) * 2018-03-28 2019-10-03 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure
JP2021120966A (ja) * 2018-04-27 2021-08-19 ソニーセミコンダクタソリューションズ株式会社 スイッチングトランジスタ及び半導体モジュール
CN112753108B (zh) * 2018-09-28 2024-06-18 同和电子科技有限公司 Iii族氮化物半导体发光元件及其制造方法
CN109659358A (zh) * 2018-11-20 2019-04-19 西安电子科技大学芜湖研究院 一种氮化镓hemt低欧姆接触电阻结构及其制作方法
CN109659362A (zh) * 2018-11-20 2019-04-19 西安电子科技大学芜湖研究院 一种基于氮化镓功率hemt结构低欧姆接触电阻的结构及其制作方法
US11101378B2 (en) 2019-04-09 2021-08-24 Raytheon Company Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors
US11749758B1 (en) 2019-11-05 2023-09-05 Semiq Incorporated Silicon carbide junction barrier schottky diode with wave-shaped regions
US11545566B2 (en) 2019-12-26 2023-01-03 Raytheon Company Gallium nitride high electron mobility transistors (HEMTs) having reduced current collapse and power added efficiency enhancement
US11469333B1 (en) 2020-02-19 2022-10-11 Semiq Incorporated Counter-doped silicon carbide Schottky barrier diode
US11362190B2 (en) * 2020-05-22 2022-06-14 Raytheon Company Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers
CN111584626B (zh) * 2020-05-28 2023-02-28 西安电子科技大学芜湖研究院 一种增强型hemt器件结构及其制备方法
JP7509621B2 (ja) * 2020-07-16 2024-07-02 住友化学株式会社 窒化物系高電子移動度トランジスタの製造方法および窒化物系高電子移動度トランジスタ
JP7332548B2 (ja) 2020-08-06 2023-08-23 株式会社東芝 半導体装置
CN112117325A (zh) * 2020-08-11 2020-12-22 苏州伯嘉半导体科技有限公司 一种GaN异质结场效应晶体管芯片及其制备方法
CN112271137B (zh) * 2020-11-02 2024-04-09 中国工程物理研究院电子工程研究所 一种基于高电子迁移率晶体管的钝化方法
CN113540230A (zh) * 2021-06-11 2021-10-22 中兴通讯股份有限公司 半导体器件及其制作方法
US20240030309A1 (en) * 2021-09-28 2024-01-25 Innoscience (Suzhou) Technology Co., Ltd. Nitride-based semiconductor device and method for manufacturing the same
US12159931B2 (en) * 2021-10-22 2024-12-03 Innoscience (Suzhou) Technology Co., Ltd. Nitride-based semiconductor device and method for manufacturing the same
CN114566472A (zh) * 2022-03-01 2022-05-31 南方科技大学 一种半导体器件及其制备方法
CN118302864A (zh) * 2022-08-24 2024-07-05 英诺赛科(苏州)半导体有限公司 一种氮化物基半导体器件及其制造方法
TWI842078B (zh) 2022-09-02 2024-05-11 力晶積成電子製造股份有限公司 高電子遷移率電晶體元件及其製造方法
WO2024060110A1 (en) * 2022-09-22 2024-03-28 Innoscience (suzhou) Semiconductor Co., Ltd. Nitride-based semiconductor device and method for manufacturing thereof
CN118511216A (zh) * 2022-11-24 2024-08-16 英诺赛科(苏州)半导体有限公司 氮化物基半导体器件及其制造方法

Family Cites Families (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2465317A2 (fr) 1979-03-28 1981-03-20 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
EP0033037B1 (en) 1979-12-28 1990-03-21 Fujitsu Limited Heterojunction semiconductor devices
JPH088350B2 (ja) 1985-04-08 1996-01-29 日本電気株式会社 半導体装置
US4755867A (en) 1986-08-15 1988-07-05 American Telephone And Telegraph Company, At&T Bell Laboratories Vertical Enhancement-mode Group III-V compound MISFETs
US4788156A (en) 1986-09-24 1988-11-29 Microwave Technology, Inc. Subchannel doping to reduce short-gate effects in field effect transistors
US4866005A (en) 1987-10-26 1989-09-12 North Carolina State University Sublimation of silicon carbide to produce large, device quality single crystals of silicon carbide
US5411914A (en) 1988-02-19 1995-05-02 Massachusetts Institute Of Technology III-V based integrated circuits having low temperature growth buffer or passivation layers
EP0334006A1 (en) 1988-02-22 1989-09-27 Siemens Aktiengesellschaft Stacked channel heterojunction fet
US4946547A (en) 1989-10-13 1990-08-07 Cree Research, Inc. Method of preparing silicon carbide surfaces for crystal growth
US5053348A (en) 1989-12-01 1991-10-01 Hughes Aircraft Company Fabrication of self-aligned, t-gate hemt
US5210051A (en) 1990-03-27 1993-05-11 Cree Research, Inc. High efficiency light emitting diodes from bipolar gallium nitride
US5172197A (en) 1990-04-11 1992-12-15 Hughes Aircraft Company Hemt structure with passivated donor layer
US5200022A (en) 1990-10-03 1993-04-06 Cree Research, Inc. Method of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting product
US5192987A (en) 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JP3352712B2 (ja) 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
EP0549373B1 (en) 1991-12-25 1995-05-17 Nec Corporation Tunnel transistor and method of manufacturing same
JPH05275463A (ja) 1992-03-30 1993-10-22 Matsushita Electric Ind Co Ltd 半導体装置
JPH05326561A (ja) 1992-05-22 1993-12-10 Nec Corp 電界効果トランジスタの製造方法
JPH06267991A (ja) 1993-03-12 1994-09-22 Hitachi Ltd 半導体装置およびその製造方法
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5686737A (en) 1994-09-16 1997-11-11 Cree Research, Inc. Self-aligned field-effect transistor for high frequency applications
US5592501A (en) 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
JP3157690B2 (ja) 1995-01-19 2001-04-16 沖電気工業株式会社 ｐｎ接合素子の製造方法
US5534462A (en) 1995-02-24 1996-07-09 Motorola, Inc. Method for forming a plug and semiconductor device having the same
US5670798A (en) 1995-03-29 1997-09-23 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating same
SE9501311D0 (sv) 1995-04-10 1995-04-10 Abb Research Ltd Method for producing a semiconductor device having a semiconductor layer of SiC
US6002148A (en) 1995-06-30 1999-12-14 Motorola, Inc. Silicon carbide transistor and method
KR100195269B1 (ko) 1995-12-22 1999-06-15 윤종용 액정표시장치의 제조방법
US5915164A (en) 1995-12-28 1999-06-22 U.S. Philips Corporation Methods of making high voltage GaN-A1N based semiconductor devices
DE19600116C2 (de) 1996-01-03 2001-03-15 Siemens Ag Doppelheterostruktur-HEMT
US5837331A (en) * 1996-03-13 1998-11-17 Motorola, Inc. Amorphous multi-layered structure and method of making the same
JPH1050982A (ja) 1996-07-31 1998-02-20 Nippon Telegr & Teleph Corp <Ntt> 半導体装置
US6936839B2 (en) 1996-10-16 2005-08-30 The University Of Connecticut Monolithic integrated circuit including a waveguide and quantum well inversion channel devices and a method of fabricating same
US6677619B1 (en) 1997-01-09 2004-01-13 Nichia Chemical Industries, Ltd. Nitride semiconductor device
US6448648B1 (en) 1997-03-27 2002-09-10 The United States Of America As Represented By The Secretary Of The Navy Metalization of electronic semiconductor devices
JPH10335637A (ja) 1997-05-30 1998-12-18 Sony Corp ヘテロ接合電界効果トランジスタ
JP3507662B2 (ja) * 1997-07-08 2004-03-15 日本電気株式会社 電界効果トランジスタ
JPH11150264A (ja) * 1997-09-12 1999-06-02 Sony Corp 半導体装置およびその製造方法ならびに無線通信装置
JPH11111730A (ja) * 1997-09-30 1999-04-23 Sanyo Electric Co Ltd 半導体装置
US6201262B1 (en) 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JP3372470B2 (ja) 1998-01-20 2003-02-04 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体装置
US6051849A (en) 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US6608327B1 (en) 1998-02-27 2003-08-19 North Carolina State University Gallium nitride semiconductor structure including laterally offset patterned layers
US6150680A (en) 1998-03-05 2000-11-21 Welch Allyn, Inc. Field effect semiconductor device having dipole barrier
JPH11261053A (ja) 1998-03-09 1999-09-24 Furukawa Electric Co Ltd:The 高移動度トランジスタ
US6086673A (en) 1998-04-02 2000-07-11 Massachusetts Institute Of Technology Process for producing high-quality III-V nitride substrates
US6316793B1 (en) 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
US6255198B1 (en) 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6177688B1 (en) 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
JP3209270B2 (ja) 1999-01-29 2001-09-17 日本電気株式会社 ヘテロ接合電界効果トランジスタ
US6582906B1 (en) 1999-04-05 2003-06-24 Affymetrix, Inc. Proportional amplification of nucleic acids
US6518637B1 (en) 1999-04-08 2003-02-11 Wayne State University Cubic (zinc-blende) aluminum nitride
US6218680B1 (en) 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
US6812053B1 (en) 1999-10-14 2004-11-02 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
US6521514B1 (en) 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
US6639255B2 (en) 1999-12-08 2003-10-28 Matsushita Electric Industrial Co., Ltd. GaN-based HFET having a surface-leakage reducing cap layer
JP4592938B2 (ja) 1999-12-08 2010-12-08 パナソニック株式会社 半導体装置
US6380108B1 (en) 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
JP3393602B2 (ja) 2000-01-13 2003-04-07 松下電器産業株式会社 半導体装置
US6586781B2 (en) 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
US6403451B1 (en) 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
JP4667556B2 (ja) 2000-02-18 2011-04-13 古河電気工業株式会社 縦型ＧａＮ系電界効果トランジスタ、バイポーラトランジスタと縦型ＧａＮ系電界効果トランジスタの製造方法
US6261929B1 (en) 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
US6498111B1 (en) 2000-08-23 2002-12-24 Cree Lighting Company Fabrication of semiconductor materials and devices with controlled electrical conductivity
JP4751498B2 (ja) 2000-03-30 2011-08-17 富士通株式会社 半導体三端子装置
US6475889B1 (en) 2000-04-11 2002-11-05 Cree, Inc. Method of forming vias in silicon carbide and resulting devices and circuits
JP4186032B2 (ja) 2000-06-29 2008-11-26 日本電気株式会社 半導体装置
JP4022708B2 (ja) 2000-06-29 2007-12-19 日本電気株式会社 半導体装置
US6515316B1 (en) 2000-07-14 2003-02-04 Trw Inc. Partially relaxed channel HEMT device
US6548333B2 (en) 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
JP3428962B2 (ja) 2000-12-19 2003-07-22 古河電気工業株式会社 ＧａＮ系高移動度トランジスタ
US6593193B2 (en) 2001-02-27 2003-07-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US6849882B2 (en) 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
US6706114B2 (en) 2001-05-21 2004-03-16 Cree, Inc. Methods of fabricating silicon carbide crystals
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
EP2267783B1 (en) 2001-07-24 2017-06-21 Cree, Inc. Insulating gate algan/gan hemt
JP3785970B2 (ja) * 2001-09-03 2006-06-14 日本電気株式会社 Ｉｉｉ族窒化物半導体素子の製造方法
JP2003209124A (ja) 2001-11-06 2003-07-25 Sony Corp 電界効果半導体素子の製造方法及び電界効果半導体素子
US7030428B2 (en) 2001-12-03 2006-04-18 Cree, Inc. Strain balanced nitride heterojunction transistors
AU2002359628A1 (en) 2001-12-06 2003-06-23 Hrl Laboratories, Llc High power-low noise microwave gan heterojunction field effet transistor
JP3986887B2 (ja) 2002-05-17 2007-10-03 松下電器産業株式会社 半導体装置
US6982204B2 (en) 2002-07-16 2006-01-03 Cree, Inc. Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses
US6841001B2 (en) 2002-07-19 2005-01-11 Cree, Inc. Strain compensated semiconductor structures and methods of fabricating strain compensated semiconductor structures
US20040021152A1 (en) 2002-08-05 2004-02-05 Chanh Nguyen Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate
US6884704B2 (en) 2002-08-05 2005-04-26 Hrl Laboratories, Llc Ohmic metal contact and channel protection in GaN devices using an encapsulation layer
JP2004260114A (ja) * 2003-02-27 2004-09-16 Shin Etsu Handotai Co Ltd 化合物半導体素子
US7786550B2 (en) 2003-03-06 2010-08-31 Panasonic Corporation P-type semiconductor and semiconductor hetero material and manufacturing methods thereof
JP2004327882A (ja) * 2003-04-28 2004-11-18 Ngk Insulators Ltd エピタキシャル基板、半導体素子および高電子移動度トランジスタ
JP4620333B2 (ja) * 2003-05-09 2011-01-26 三菱電機株式会社 半導体装置の製造方法
JP4746825B2 (ja) 2003-05-15 2011-08-10 富士通株式会社 化合物半導体装置
JP2005183551A (ja) 2003-12-17 2005-07-07 Nec Corp 半導体装置、電界効果トランジスタおよび電界効果トランジスタの製造方法
US7170111B2 (en) 2004-02-05 2007-01-30 Cree, Inc. Nitride heterojunction transistors having charge-transfer induced energy barriers and methods of fabricating the same
US7432142B2 (en) 2004-05-20 2008-10-07 Cree, Inc. Methods of fabricating nitride-based transistors having regrown ohmic contact regions
US7084441B2 (en) 2004-05-20 2006-08-01 Cree, Inc. Semiconductor devices having a hybrid channel layer, current aperture transistors and methods of fabricating same
JP2008508166A (ja) * 2004-06-18 2008-03-21 リージェンツ・オブ・ザ・ユニヴァーシティー・オブ・ミネソタ 高周波プラズマを用いてナノ粒子を生成するための方法および装置
US7547928B2 (en) * 2004-06-30 2009-06-16 Interuniversitair Microelektronica Centrum (Imec) AlGaN/GaN high electron mobility transistor devices
US7238560B2 (en) 2004-07-23 2007-07-03 Cree, Inc. Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
US7456443B2 (en) 2004-11-23 2008-11-25 Cree, Inc. Transistors having buried n-type and p-type regions beneath the source region
US20060284167A1 (en) * 2005-06-17 2006-12-21 Godfrey Augustine Multilayered substrate obtained via wafer bonding for power applications
US8163196B2 (en) 2008-10-28 2012-04-24 Honeywell International Inc. Azeotrope-like compositions comprising 1-chloro-3,3,3-trifluoropropene

Similar Documents

Publication Publication Date Title
JP2008521248A5 (enExample)
US8907349B2 (en) Semiconductor device and method of manufacturing the same
US7576373B1 (en) Nitride semiconductor device and method for manufacturing the same
KR101910973B1 (ko) 고 전자 이동도 트랜지스터 및 그 제조방법
JP4755961B2 (ja) 窒化物半導体装置及びその製造方法
KR101890749B1 (ko) 전극구조체, 이를 포함하는 질화갈륨계 반도체소자 및 이들의 제조방법
US20110133206A1 (en) Compound semiconductor device
JP2012080123A5 (enExample)
US11362174B2 (en) Method of manufacturing semiconductor device and semiconductor device
CN209747521U (zh) 高电子迁移率晶体管
JP2010509770A5 (enExample)
TW200605350A (en) Methods of fabricating nitride-based transistors with a cap layer and a recessed gate
TWI512993B (zh) 電晶體與其形成方法與半導體元件
JP2008091392A5 (enExample)
US20140091322A1 (en) Semiconductor device and method of manufacturing the same
JP2006511961A5 (enExample)
TW200620666A (en) Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same
US9099341B2 (en) Field effect transistor
JP2013012735A5 (enExample)
JP2008277640A (ja) 窒化物半導体素子
JP2009164158A5 (enExample)
US20160211341A1 (en) Transistor with Diamond Gate
TWI470792B (zh) 異質結構場效電晶體改良結構及其製程方法
CN104185899B (zh) 氮化物半导体器件
US20080090395A1 (en) Method for producing p-type group III nitride semiconductor and method for producing electrode for p-type group III nitride semiconductor