JP2013012735A5 - - Google Patents

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JP2013012735A5
JP2013012735A5 JP2012138007A JP2012138007A JP2013012735A5 JP 2013012735 A5 JP2013012735 A5 JP 2013012735A5 JP 2012138007 A JP2012138007 A JP 2012138007A JP 2012138007 A JP2012138007 A JP 2012138007A JP 2013012735 A5 JP2013012735 A5 JP 2013012735A5
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layer
passivation layer
group iii
forming
source
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JP2012138007A
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JP2013012735A (ja
JP6054070B2 (ja
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JP2012138007A 2011-06-20 2012-06-19 Ｈｅｍｔ装置を製造するｃｍｏｓコンパチブルな方法とそのｈｅｍｔ装置 Active JP6054070B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201161498951P 2011-06-20 2011-06-20
US61/498,951 2011-06-20
US201161526107P 2011-08-22 2011-08-22
US61/526,107 2011-08-22

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JP2013012735A JP2013012735A (ja) 2013-01-17
JP2013012735A5 true JP2013012735A5 (enExample) 2015-05-28
JP6054070B2 JP6054070B2 (ja) 2016-12-27

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JP2012138007A Active JP6054070B2 (ja) 2011-06-20 2012-06-19 Ｈｅｍｔ装置を製造するｃｍｏｓコンパチブルな方法とそのｈｅｍｔ装置

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US (2) US9070758B2 (enExample)
EP (1) EP2541605A1 (enExample)
JP (1) JP6054070B2 (enExample)

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CN113035783B (zh) * 2021-03-12 2022-07-22 浙江集迈科微电子有限公司 石墨烯器件与GaN器件异质集成结构及制备方法
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