JP6834709B2 - 窒化珪素パッシベーション膜の成膜方法及び半導体装置の製造方法 - Google Patents
窒化珪素パッシベーション膜の成膜方法及び半導体装置の製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 85
- 229910052581 Si3N4 Inorganic materials 0.000 title claims description 63
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims description 63
- 238000000034 method Methods 0.000 title claims description 50
- 238000002161 passivation Methods 0.000 title claims description 44
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 150000004767 nitrides Chemical class 0.000 claims description 63
- 230000015572 biosynthetic process Effects 0.000 claims description 34
- 239000012298 atmosphere Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 13
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- 239000010408 film Substances 0.000 description 123
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 238000005229 chemical vapour deposition Methods 0.000 description 15
- 230000003746 surface roughness Effects 0.000 description 12
- 239000007789 gas Substances 0.000 description 10
- 238000010926 purge Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007736 thin film deposition technique Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Description
図1は、本発明の第1実施形態に係る成膜方法によって形成される窒化珪素パッシベーション膜を示す側面図である。この窒化珪素パッシベーション膜3は、窒化物半導体層5の表面と接しており、窒化物半導体層5の表面上に減圧CVD法によって成膜されたものである。窒化物半導体層5は、例えばSiCなどの基板7上に成長した層であって、例えばGaN層である。窒化物半導体層5及び基板7は、エピタキシャルウェハ9を構成する。
なお、この相関を取得するに際して、成膜前の反応炉内の圧力を10kPaとし、成膜前の反応炉内の雰囲気をNH3雰囲気とした。
なお、この相関を取得するに際して、反応炉内にエピタキシャルウェハ9を導入する際の温度を400℃とし、圧力を10kPaとした。
次に、第2実施形態として、上記第1実施形態による窒化珪素パッシベーション膜3の成膜方法を含む、窒化物半導体を主構成材料とする半導体装置の製造方法を説明する。図10〜図12は、本実施形態による製造方法の各工程を示す図である。本実施形態は、半導体装置としてGaN−HEMTを例示する。
Claims (6)
- 窒化物半導体に接する窒化珪素パッシベーション膜を成膜する方法であって、
前記窒化物半導体を500℃以下の第1の温度に設定された反応炉内に導入する工程と、
前記反応炉内をNH3雰囲気もしくはNH3分圧が0.2以上であるNH3及びN2の混合雰囲気とし、前記反応炉内の圧力を3kPa以上の第1の圧力に維持しつつ、前記反応炉内の温度を750℃以上の第2の温度に変更する工程と、
前記反応炉内の圧力を100Pa以下の第2の圧力に減圧する工程と、
前記反応炉内にジクロロシラン(SiH2Cl2)を供給して前記窒化珪素パッシベーション膜を成膜する工程と、
を含む、窒化珪素パッシベーション膜の成膜方法。 - 前記第2の温度に変更する工程は、NH3雰囲気もしくはNH3分圧が0.6以上であるNH3及びN2の混合雰囲気で行われる、請求項1に記載の窒化珪素パッシベーション膜の成膜方法。
- 前記窒化物半導体がGaNである、請求項1または2に記載の窒化珪素パッシベーション膜の成膜方法。
- 前記第2の温度が900℃以下である、請求項1〜3のいずれか一項に記載の窒化珪素パッシベーション膜の成膜方法。
- 前記第2の圧力が10Pa以上である、請求項1〜4のいずれか一項に記載の窒化珪素パッシベーション膜の成膜方法。
- 窒化物半導体を主構成材料とする半導体装置の製造方法であって、
複数の窒化物半導体層を含む積層構造を基板上に成長する工程と、
請求項1〜5のいずれか一項に記載の方法を用いて、前記積層構造に接する窒化珪素パッシベーション膜を成膜する工程と、
前記窒化珪素パッシベーション膜に開口を形成し、該開口を介して前記積層構造に接触する電極を形成する工程と、
を含む、半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2017073821A JP6834709B2 (ja) | 2017-04-03 | 2017-04-03 | 窒化珪素パッシベーション膜の成膜方法及び半導体装置の製造方法 |
US15/941,543 US10566184B2 (en) | 2017-04-03 | 2018-03-30 | Process of depositing silicon nitride (SiN) film on nitride semiconductor |
CN201810282155.7A CN108695139B (zh) | 2017-04-03 | 2018-04-02 | 在氮化物半导体上沉积氮化硅(SiN)膜的方法 |
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