JP2007329483A5 - - Google Patents
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- Publication number
- JP2007329483A5 JP2007329483A5 JP2007151238A JP2007151238A JP2007329483A5 JP 2007329483 A5 JP2007329483 A5 JP 2007329483A5 JP 2007151238 A JP2007151238 A JP 2007151238A JP 2007151238 A JP2007151238 A JP 2007151238A JP 2007329483 A5 JP2007329483 A5 JP 2007329483A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- active layer
- semiconductor device
- passivation layer
- active
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000002161 passivation Methods 0.000 claims 24
- 239000004065 semiconductor Substances 0.000 claims 21
- 230000005533 two-dimensional electron gas Effects 0.000 claims 12
- 239000000463 material Substances 0.000 claims 11
- 238000004519 manufacturing process Methods 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 239000000758 substrate Substances 0.000 claims 5
- 230000015572 biosynthetic process Effects 0.000 claims 3
- 229910002704 AlGaN Inorganic materials 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 125000006850 spacer group Chemical group 0.000 claims 2
- 229910017083 AlN Inorganic materials 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910004541 SiN Inorganic materials 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 229910052681 coesite Inorganic materials 0.000 claims 1
- 229910052593 corundum Inorganic materials 0.000 claims 1
- 229910052906 cristobalite Inorganic materials 0.000 claims 1
- 229910003460 diamond Inorganic materials 0.000 claims 1
- 239000010432 diamond Substances 0.000 claims 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims 1
- 238000011065 in-situ storage Methods 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910052682 stishovite Inorganic materials 0.000 claims 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims 1
- 229910052905 tridymite Inorganic materials 0.000 claims 1
- 229910001845 yogo sapphire Inorganic materials 0.000 claims 1
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US81166106P | 2006-06-07 | 2006-06-07 | |
| US60/811,661 | 2006-06-07 | ||
| EP06118063A EP1883115A1 (en) | 2006-07-28 | 2006-07-28 | An enhancement mode field effect device and the method of production thereof |
| EP06118063.4 | 2006-07-28 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007329483A JP2007329483A (ja) | 2007-12-20 |
| JP2007329483A5 true JP2007329483A5 (enExample) | 2010-03-04 |
| JP5183975B2 JP5183975B2 (ja) | 2013-04-17 |
Family
ID=38929705
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007151238A Active JP5183975B2 (ja) | 2006-06-07 | 2007-06-07 | エンハンスモード電界効果デバイスおよびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5183975B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2009081584A1 (ja) * | 2007-12-26 | 2011-05-06 | 日本電気株式会社 | 半導体装置 |
| US8309987B2 (en) * | 2008-07-15 | 2012-11-13 | Imec | Enhancement mode semiconductor device |
| KR101666910B1 (ko) * | 2009-04-08 | 2016-10-17 | 이피션트 파워 컨버젼 코퍼레이션 | 증가형 ＧａＮ ＨＥＭＴ 장치 및 그 제조 방법 |
| JP2011082216A (ja) | 2009-10-02 | 2011-04-21 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
| JP2011082332A (ja) * | 2009-10-07 | 2011-04-21 | National Chiao Tung Univ | 高電子移動度トランジスタの構造、その構造を含んだデバイス及びその製造方法 |
| JP5724339B2 (ja) | 2010-12-03 | 2015-05-27 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
| JP5596653B2 (ja) * | 2011-10-11 | 2014-09-24 | 日本電信電話株式会社 | 電界効果トランジスタおよびその製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4663156B2 (ja) * | 2001-05-31 | 2011-03-30 | 富士通株式会社 | 化合物半導体装置 |
| JP3690594B2 (ja) * | 2001-07-25 | 2005-08-31 | 日本電信電話株式会社 | ナイトライド系化合物半導体の電界効果トランジスタ |
| WO2003071607A1 (en) * | 2002-02-21 | 2003-08-28 | The Furukawa Electric Co., Ltd. | GaN FIELD-EFFECT TRANSISTOR |
| JP2005086171A (ja) * | 2003-09-11 | 2005-03-31 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP5248743B2 (ja) * | 2004-06-30 | 2013-07-31 | アイメック | 半導体装置および半導体装置の製造方法 |
-
2007
- 2007-06-07 JP JP2007151238A patent/JP5183975B2/ja active Active
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