JP5183975B2 - エンハンスモード電界効果デバイスおよびその製造方法 - Google Patents

エンハンスモード電界効果デバイスおよびその製造方法 Download PDF

Info

Publication number
JP5183975B2
JP5183975B2 JP2007151238A JP2007151238A JP5183975B2 JP 5183975 B2 JP5183975 B2 JP 5183975B2 JP 2007151238 A JP2007151238 A JP 2007151238A JP 2007151238 A JP2007151238 A JP 2007151238A JP 5183975 B2 JP5183975 B2 JP 5183975B2
Authority
JP
Japan
Prior art keywords
layer
active layer
semiconductor device
passivation layer
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007151238A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007329483A (ja
JP2007329483A5 (enExample
Inventor
ジョフ・デルライン
ステファン・ボエイケンス
マリアンヌ・ジェルメン
フスターフ・ボルフス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Katholieke Universiteit Leuven
Interuniversitair Microelektronica Centrum vzw IMEC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP06118063A external-priority patent/EP1883115A1/en
Application filed by Katholieke Universiteit Leuven, Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Katholieke Universiteit Leuven
Publication of JP2007329483A publication Critical patent/JP2007329483A/ja
Publication of JP2007329483A5 publication Critical patent/JP2007329483A5/ja
Application granted granted Critical
Publication of JP5183975B2 publication Critical patent/JP5183975B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP2007151238A 2006-06-07 2007-06-07 エンハンスモード電界効果デバイスおよびその製造方法 Active JP5183975B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US81166106P 2006-06-07 2006-06-07
US60/811,661 2006-06-07
EP06118063.4 2006-07-28
EP06118063A EP1883115A1 (en) 2006-07-28 2006-07-28 An enhancement mode field effect device and the method of production thereof

Publications (3)

Publication Number Publication Date
JP2007329483A JP2007329483A (ja) 2007-12-20
JP2007329483A5 JP2007329483A5 (enExample) 2010-03-04
JP5183975B2 true JP5183975B2 (ja) 2013-04-17

Family

ID=38929705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007151238A Active JP5183975B2 (ja) 2006-06-07 2007-06-07 エンハンスモード電界効果デバイスおよびその製造方法

Country Status (1)

Country Link
JP (1) JP5183975B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2009081584A1 (ja) * 2007-12-26 2011-05-06 日本電気株式会社 半導体装置
US8309987B2 (en) * 2008-07-15 2012-11-13 Imec Enhancement mode semiconductor device
WO2010118087A1 (en) * 2009-04-08 2010-10-14 Efficient Power Conversion Corporation Enhancement mode gan hemt device and method for fabricating the same
JP2011082216A (ja) 2009-10-02 2011-04-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2011082332A (ja) * 2009-10-07 2011-04-21 National Chiao Tung Univ 高電子移動度トランジスタの構造、その構造を含んだデバイス及びその製造方法
JP5724339B2 (ja) 2010-12-03 2015-05-27 富士通株式会社 化合物半導体装置及びその製造方法
JP5596653B2 (ja) * 2011-10-11 2014-09-24 日本電信電話株式会社 電界効果トランジスタおよびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4663156B2 (ja) * 2001-05-31 2011-03-30 富士通株式会社 化合物半導体装置
JP3690594B2 (ja) * 2001-07-25 2005-08-31 日本電信電話株式会社 ナイトライド系化合物半導体の電界効果トランジスタ
JP4865189B2 (ja) * 2002-02-21 2012-02-01 古河電気工業株式会社 ＧａＮ系電界効果トランジスタ
JP2005086171A (ja) * 2003-09-11 2005-03-31 Fujitsu Ltd 半導体装置及びその製造方法
JP5248743B2 (ja) * 2004-06-30 2013-07-31 アイメック 半導体装置および半導体装置の製造方法

Also Published As

Publication number Publication date
JP2007329483A (ja) 2007-12-20

Similar Documents

Publication Publication Date Title
US8399911B2 (en) Enhancement mode field effect device and the method of production thereof
KR102014328B1 (ko) ＡｌＳｉＮ 패시베이션층을 갖는 헤테로-구조 전력 트랜지스터
JP5785153B2 (ja) 補償型ゲートｍｉｓｆｅｔ及びその製造方法
US7956383B2 (en) Field effect transistor
US8912571B2 (en) Compound semiconductor device including first film on compound semiconductor layer and second film on first film and method of manufacturing the same
JP5071377B2 (ja) 化合物半導体装置及びその製造方法
US9236465B2 (en) High electron mobility transistor and method of forming the same
JP5670427B2 (ja) ＧａＮバッファ層におけるドーパント拡散変調
US10170579B2 (en) Surface treatment and passivation for high electron mobility transistors
US8624296B1 (en) High electron mobility transistor including an embedded flourine region
KR102630424B1 (ko) GaN 스페이서 두께의 향상된 균일성을 위한 선택적 및 비선택적 에칭 층을 갖는 인핸스먼트-모드 GaN 트랜지스터
US20110108885A1 (en) Semiconductor device and method of manufacturing a semiconductor device
KR101008272B1 (ko) 노멀 오프 특성을 갖는 질화물계 고전자 이동도 트랜지스터및 그 제조방법
CN111883588A (zh) 用于hemt器件的侧壁钝化
JP5183975B2 (ja) エンハンスモード電界効果デバイスおよびその製造方法
CN110754002B (zh) 高电子迁移率晶体管
JP5546104B2 (ja) ＧａＮ系電界効果トランジスタ
JP6966689B2 (ja) 窒化物半導体装置及びその製造方法
CN105244377A (zh) 一种基于硅衬底的hemt器件及其制造方法
TW201419530A (zh) 化合物半導體裝置及其製造方法
US10629475B2 (en) Semiconductor device with two-part insulation structure within non-active region
EP1865561B1 (en) An enhancement mode field effect device and the method of production thereof
TW202329461A (zh) 高電子遷移率電晶體及其製作方法
US20240030329A1 (en) Semiconductor device and method for manufacturing the same
TW202017181A (zh) 增強型高電子移動率電晶體與相關之製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071004

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100115

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100115

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20121026

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121030

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121212

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130108

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130116

R150 Certificate of patent or registration of utility model

Ref document number: 5183975

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160125

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250