JP5604147B2 - トランジスタ及びその製造方法 - Google Patents
トランジスタ及びその製造方法 Download PDFInfo
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- JP5604147B2 JP5604147B2 JP2010070480A JP2010070480A JP5604147B2 JP 5604147 B2 JP5604147 B2 JP 5604147B2 JP 2010070480 A JP2010070480 A JP 2010070480A JP 2010070480 A JP2010070480 A JP 2010070480A JP 5604147 B2 JP5604147 B2 JP 5604147B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 229910052723 transition metal Inorganic materials 0.000 claims description 69
- 150000003624 transition metals Chemical class 0.000 claims description 65
- 229910052707 ruthenium Inorganic materials 0.000 claims description 28
- 239000004065 semiconductor Substances 0.000 claims description 27
- 150000004767 nitrides Chemical class 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 22
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 16
- 230000010287 polarization Effects 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 125000000217 alkyl group Chemical group 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 11
- 238000002844 melting Methods 0.000 claims description 8
- 230000008018 melting Effects 0.000 claims description 8
- 229910052741 iridium Inorganic materials 0.000 claims description 6
- 229910052762 osmium Inorganic materials 0.000 claims description 6
- 229910052703 rhodium Inorganic materials 0.000 claims description 6
- 239000010948 rhodium Substances 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 4
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 2
- 229910002704 AlGaN Inorganic materials 0.000 claims 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 71
- 229910002601 GaN Inorganic materials 0.000 description 70
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 32
- 239000002994 raw material Substances 0.000 description 13
- 239000000969 carrier Substances 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 9
- 125000004429 atom Chemical group 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- -1 ethylcyclopentadienyl Chemical group 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 229910052742 iron Inorganic materials 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 238000004364 calculation method Methods 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000010030 laminating Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical group CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- FCIBCALVQNVXGB-UHFFFAOYSA-N [Ru].[CH]1C=CC=C1 Chemical compound [Ru].[CH]1C=CC=C1 FCIBCALVQNVXGB-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910021386 carbon form Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 230000026683 transduction Effects 0.000 description 1
- 238000010361 transduction Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000005428 wave function Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
- H01L21/02507—Alternating layers, e.g. superlattice
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H01L21/0257—Doping during depositing
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- H01L21/02581—Transition metal or rare earth elements
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/15—Structures with periodic or quasi periodic potential variation, e.g. multiple quantum wells, superlattices
- H01L29/151—Compositional structures
- H01L29/152—Compositional structures with quantum effects only in vertical direction, i.e. layered structures with quantum effects solely resulting from vertical potential variation
- H01L29/155—Comprising only semiconductor materials
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Description
101 低温GaNバッファ層
102 下地アンドープGaN層
103 Ru添加層
103A 第1の層
103B 第2の層
103C 第3の層
105 上部アンドープGaN層
110 サファイア基板
112 下地アンドープGaN層
114 Ru添加層
115 遷移線型モデルTLMパターン
115A 円形電極
115B リング型電極
124 Ru添加超格子層
300 Si基板
301 下地層
302 動作層
305 ゲート電極
306 ソース電極
307 ドレイン電極
309 保護膜
311 バッファ層
312 AlGaN層
312A 第1のAlGaN層
312B 第2のAlGaN層
314 超格子層
321 チャネル層
322 キャップ層
323 p型層
Claims (13)
- 基板と
前記基板の上に形成された下地層と、
前記下地層の上に形成された窒化物半導体からなる動作層とを備え、
前記下地層は、複数の窒化物半導体層が積層された積層体であり、遷移金属であるコバルト、ニッケル、ルテニウム、オスミウム、ロジウム及びイリジウムのうちの少なくとも1つを含む遷移金属含有層を有し、
前記下地層は、超格子層を有し、
前記超格子層は、前記遷移金属含有層であり、
前記超格子層は、絶縁体であることを特徴とするトランジスタ。 - 前記超格子層は、AlN層とGaN層とを含み、
前記超格子層は、前記積層体のうちの最も分極が強い層であることを特徴とする請求項1に記載のトランジスタ。 - 前記超格子層の下側に接する層は、少なくとも上面から0.1μmの範囲において、前記遷移金属を含むことを特徴とする請求項1又は2に記載のトランジスタ。
- 前記超格子層のうちの格子定数が小さい層は、前記遷移金属を含み、前記超格子層のうちの格子定数が大きい層は、前記遷移金属を含まないことを特徴とする請求項1〜3のいずれか1項に記載のトランジスタ。
- 前記下地層は、AlGaN層を有し、
前記AlGaN層は、前記遷移金属含有層であることを特徴とする請求項1〜4のいずれか1項に記載のトランジスタ。 - 前記積層体は、分極特性が互いに異なる2つの層により形成された界面を有し、
前記界面を形成する2つの層の少なくとも一方は前記遷移金属含有層であることを特徴とする請求項1〜5のいずれか1項に記載のトランジスタ。 - 前記積層体のうちの少なくとも1層はAlGaN層であり、
前記AlGaN層は、前記積層体のうちの最も分極が強い層であることを特徴とする請求項1〜6のいずれか1項に記載のトランジスタ。 - 前記AlGaN層は、前記遷移金属含有層であることを特徴とする請求項7に記載のトランジスタ。
- 前記遷移金属含有層は、前記積層体の他の層と比べて炭素含有量が高いことを特徴とする請求項1〜4のいずれか1項に記載のトランジスタ。
- 前記遷移金属含有層よりも上側の層は、前記遷移金属を含まないことを特徴とする請求項1〜4のいずれか1項に記載のトランジスタ。
- 前記遷移金属は、メタロセン化合物により前記遷移金属含有層に導入され、
前記メタロセン化合物は、アルキル側鎖を1つ以上有する2対のシクロペンタジエニル基の間に前記遷移金属を挟んだ構造を有し、
前記アルキル側鎖に含まれる炭素原子の数は2個以上であることを特徴とする請求項1〜10のいずれか1項に記載のトランジスタ。 - 基板の上に下地層を形成する工程と、
前記下地層の上に窒化物半導体からなる動作層を形成する工程を備え、
前記下地層を形成する工程は、遷移金属であるコバルト、ニッケル、ルテニウム、オスミウム、ロジウム及びイリジウムのうちの少なくとも1つを含有する窒化物半導体層である遷移金属含有層を形成する工程を含み、
前記遷移金属含有層を形成する工程は、メタロセン化合物を熱分解することにより前記窒化物半導体層に前記遷移金属を導入する工程を含み、
前記メタロセン化合物は、アルキル側鎖を1つ以上有する2対のシクロペンタジエニル基の間に前記遷移金属を挟んだ構造を有し、
前記アルキル側鎖に含まれる炭素原子の数は2個以上であることを特徴とするトランジスタの製造方法。 - 前記メタロセン化合物は、融点が50℃未満であることを特徴とする請求項12に記載のトランジスタの製造方法。
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