FR2974242B1 - Amelioration des proprietes de transport dans les transistors hemts composes de semi-conducteurs bores a larges bande interdite (iii-b)-n - Google Patents

Amelioration des proprietes de transport dans les transistors hemts composes de semi-conducteurs bores a larges bande interdite (iii-b)-n

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Publication number
FR2974242B1
FR2974242B1 FR1101167A FR1101167A FR2974242B1 FR 2974242 B1 FR2974242 B1 FR 2974242B1 FR 1101167 A FR1101167 A FR 1101167A FR 1101167 A FR1101167 A FR 1101167A FR 2974242 B1 FR2974242 B1 FR 2974242B1
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France
Prior art keywords
layer
hemts
compounded
prohibited
conductors
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Application number
FR1101167A
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English (en)
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FR2974242A1 (fr
Inventor
Abdallah Ougazzaden
Marie Antoinette Poisson
Vinod Ravindran
Ali Soltani
Jaeger Jean Claude De
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite de Lille 1 Sciences et Technologies
Thales SA
Alcatel Lucent SAS
Georgia Institute of Technology
Original Assignee
Centre National de la Recherche Scientifique CNRS
Universite de Lille 1 Sciences et Technologies
Thales SA
Alcatel Lucent SAS
Georgia Institute of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Centre National de la Recherche Scientifique CNRS, Universite de Lille 1 Sciences et Technologies, Thales SA, Alcatel Lucent SAS, Georgia Institute of Technology filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR1101167A priority Critical patent/FR2974242B1/fr
Priority to PCT/EP2012/056945 priority patent/WO2012140271A1/fr
Priority to US14/111,163 priority patent/US20140327012A1/en
Priority to EP12717088.4A priority patent/EP2697831A1/fr
Publication of FR2974242A1 publication Critical patent/FR2974242A1/fr
Application granted granted Critical
Publication of FR2974242B1 publication Critical patent/FR2974242B1/fr
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
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    • H01L21/02494—Structure
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
FR1101167A 2011-04-14 2011-04-14 Amelioration des proprietes de transport dans les transistors hemts composes de semi-conducteurs bores a larges bande interdite (iii-b)-n Active FR2974242B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1101167A FR2974242B1 (fr) 2011-04-14 2011-04-14 Amelioration des proprietes de transport dans les transistors hemts composes de semi-conducteurs bores a larges bande interdite (iii-b)-n
PCT/EP2012/056945 WO2012140271A1 (fr) 2011-04-14 2012-04-16 Transistors hemts composes de semi - conducteurs bores a large bande interdite (iii-b) -n
US14/111,163 US20140327012A1 (en) 2011-04-14 2012-04-16 Hemt transistors consisting of (iii-b)-n wide bandgap semiconductors comprising boron
EP12717088.4A EP2697831A1 (fr) 2011-04-14 2012-04-16 Transistors hemts composes de semi - conducteurs bores a large bande interdite (iii-b) -n

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1101167A FR2974242B1 (fr) 2011-04-14 2011-04-14 Amelioration des proprietes de transport dans les transistors hemts composes de semi-conducteurs bores a larges bande interdite (iii-b)-n

Publications (2)

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FR2974242A1 FR2974242A1 (fr) 2012-10-19
FR2974242B1 true FR2974242B1 (fr) 2013-09-27

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Country Status (4)

Country Link
US (1) US20140327012A1 (fr)
EP (1) EP2697831A1 (fr)
FR (1) FR2974242B1 (fr)
WO (1) WO2012140271A1 (fr)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9245991B2 (en) 2013-08-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturing
FR3011981B1 (fr) * 2013-10-11 2018-03-02 Centre National De La Recherche Scientifique - Cnrs - Transistor hemt a base d'heterojonction
CN106910724B (zh) * 2016-04-05 2020-06-05 苏州捷芯威半导体有限公司 一种半导体器件
CN107248528B (zh) * 2017-06-09 2019-10-11 西安电子科技大学 低频率损耗GaN基微波功率器件及其制作方法
CN111466013B (zh) * 2017-10-11 2023-08-22 阿卜杜拉国王科技大学 具有氮化硼铝三元合金层和第二iii族氮化物三元合金层的异质结的半导体器件
WO2019077420A1 (fr) * 2017-10-19 2019-04-25 King Abdullah University Of Science And Technology Transistor à haute mobilité d'électrons ayant une couche intermédiaire en alliage de nitrure de bore et procédé de production
CN117637954B (zh) * 2024-01-25 2024-04-09 江西兆驰半导体有限公司 发光二极管外延片及其制备方法、发光二极管
CN117650174A (zh) * 2024-01-30 2024-03-05 江西兆驰半导体有限公司 一种Si基GaN HEMT外延层及其制备方法

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US6340824B1 (en) * 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
US6233265B1 (en) * 1998-07-31 2001-05-15 Xerox Corporation AlGaInN LED and laser diode structures for pure blue or green emission
JP2002057158A (ja) * 2000-08-09 2002-02-22 Sony Corp 絶縁性窒化物層及びその形成方法、半導体装置及びその製造方法
JP4530171B2 (ja) * 2003-08-08 2010-08-25 サンケン電気株式会社 半導体装置
WO2005024955A1 (fr) * 2003-09-05 2005-03-17 Sanken Electric Co., Ltd. Dispositif a semi-conducteurs
US7547928B2 (en) * 2004-06-30 2009-06-16 Interuniversitair Microelektronica Centrum (Imec) AlGaN/GaN high electron mobility transistor devices
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US20080296616A1 (en) * 2007-06-04 2008-12-04 Sharp Laboratories Of America, Inc. Gallium nitride-on-silicon nanoscale patterned interface
FR2924270B1 (fr) * 2007-11-27 2010-08-27 Picogiga Internat Procede de fabrication d'un dispositif electronique
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Also Published As

Publication number Publication date
US20140327012A1 (en) 2014-11-06
WO2012140271A1 (fr) 2012-10-18
EP2697831A1 (fr) 2014-02-19
FR2974242A1 (fr) 2012-10-19

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