JP6736513B2 - 半導体装置、電源回路、及び、コンピュータ - Google Patents
半導体装置、電源回路、及び、コンピュータ Download PDFInfo
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- JP6736513B2 JP6736513B2 JP2017085423A JP2017085423A JP6736513B2 JP 6736513 B2 JP6736513 B2 JP 6736513B2 JP 2017085423 A JP2017085423 A JP 2017085423A JP 2017085423 A JP2017085423 A JP 2017085423A JP 6736513 B2 JP6736513 B2 JP 6736513B2
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- gallium
- semiconductor device
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- aluminum
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- 239000004065 semiconductor Substances 0.000 title claims description 197
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 131
- 229910052733 gallium Inorganic materials 0.000 claims description 129
- 150000004767 nitrides Chemical class 0.000 claims description 106
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 91
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 91
- 229910052782 aluminium Inorganic materials 0.000 claims description 90
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 90
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052710 silicon Inorganic materials 0.000 claims description 29
- 239000010703 silicon Substances 0.000 claims description 29
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 26
- 229910052796 boron Inorganic materials 0.000 claims description 25
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 10
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 6
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 6
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 224
- 229910052581 Si3N4 Inorganic materials 0.000 description 26
- 230000004888 barrier function Effects 0.000 description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 26
- 229910002601 GaN Inorganic materials 0.000 description 24
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 15
- 229910052760 oxygen Inorganic materials 0.000 description 15
- 239000001301 oxygen Substances 0.000 description 15
- 239000000758 substrate Substances 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 230000001681 protective effect Effects 0.000 description 14
- 238000009826 distribution Methods 0.000 description 12
- 230000000694 effects Effects 0.000 description 10
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 230000005533 two-dimensional electron gas Effects 0.000 description 8
- 230000000903 blocking effect Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 7
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000002131 composite material Substances 0.000 description 6
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- -1 for example Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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Description
本実施形態の半導体装置は、ガリウム(Ga)を含み、第1の窒化物半導体領域と、第1の窒化物半導体領域よりもバンドギャップの大きい第2の窒化物半導体領域を有する窒化物半導体層と、ゲート電極と、窒化物半導体層の上に位置する第1の電極と、窒化物半導体層の上に位置し、第1の電極との間にゲート電極が位置する第2の電極と、窒化物半導体層とゲート電極との間に位置し、アルミニウム(Al)及びボロン(B)の少なくともいずれか一方の元素、ガリウム(Ga)、及び、シリコン(Si)を含む第1の酸化物領域を有するゲート絶縁層と、を備える。そして、第1の酸化物領域の窒化物半導体層の側の端部を第1の端部、第1の酸化物領域のゲート電極の側の端部を第2の端部、第1の端部と第2の端部との間の距離をd1、第1の端部から第2の端部の方向にd1/10だけ離間した位置を第1の位置とした場合に、第1の位置におけるガリウムの原子濃度が少なくともいずれか一方の元素の原子濃度の80%以上120%以下である。
本変形例の半導体装置は、窒化シリコン領域と酸化シリコン領域に加え、酸化アルミニウム領域を備える点で、第1の実施形態と異なっている。
本実施形態の半導体装置は、ゲート電極が、ガリウムを含む多結晶シリコン、又は、ガリウムを含む多結晶炭化珪素を有する以外は、第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、窒化物半導体層の上のゲート電極と第2の電極との間に位置し、アルミニウム(Al)及びボロン(B)の少なくともいずれか一方の元素、ガリウム(Ga)、及び、シリコン(Si)を含む第2の酸化物領域を有する絶縁層と、窒化物半導体層との間に上記絶縁層が位置し、ゲート電極に電気的に接続された第3の電極を、更に備える。そして、第2の酸化物領域の窒化物半導体層の側の端部を第3の端部、第2の酸化物領域の第3の電極の側の端部を第4の端部、第3の端部と第4の端部との間の距離をd2、第3の端部から第4の端部の方向にd2/10だけ離間した位置を第3の位置とした場合に、第3の位置におけるガリウムの原子濃度が上記少なくともいずれか一方の元素の原子濃度の80%以上120%以下である。上記絶縁層と上記第3の電極を有する以外は、第2の実施形態と同様である。したがって、第2の実施形態と重複する内容につては記述を省略する。
本実施形態の半導体装置は、ゲート電極とゲート絶縁層との間にp型の窒化物半導体層を、更に備える以外は第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、ゲートリセス構造を備える以外は第1の実施形態と同様である。したがって、第1の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、p型窒化ガリウム層24を備える以外は第5の実施形態と同様である。したがって、第5の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、溝(リセス)30の底部がバリア層15bに位置する以外は、第6の実施形態と同様である。したがって、第6の実施形態と重複する内容については記述を省略する。
本実施形態の半導体装置は、縦型のデバイスである点で、第1の実施形態と異なっている。第1の実施形態と重複する内容については記述を省略する。
本実施形態の電源回路及びコンピュータは、HEMTを有する。
12 バッファ層
15 窒化物半導体層
15a チャネル層(第1の窒化物半導体領域)
15b バリア層(第2の窒化物半導体領域)
18 ソース電極(第1の電極)
20 ドレイン電極(第2の電極)
22 ゲート絶縁層
22a 窒化シリコン領域(第1の窒化物領域)
22b 酸化シリコン領域(第1の酸化物領域)
28 ゲート電極
32 保護絶縁層(絶縁層)
32a 窒化シリコン領域(第2の窒化物領域)
32b 酸化シリコン領域(第2の酸化物領域)
34 ゲートフィールドプレート電極(第3の電極)
42 電源回路
100 HEMT(半導体装置)
200 HEMT(半導体装置)
300 HEMT(半導体装置)
400 HEMT(半導体装置)
500 HEMT(半導体装置)
600 HEMT(半導体装置)
700 サーバ(コンピュータ)
Claims (20)
- ガリウム(Ga)を含む窒化物半導体層と、
ゲート電極と、
前記窒化物半導体層の上に位置する第1の電極と、
前記窒化物半導体層の上に位置し、前記第1の電極との間に前記ゲート電極が位置する第2の電極と、
前記窒化物半導体層と前記ゲート電極との間に位置し、アルミニウム(Al)及びボロン(B)の少なくともいずれか一方の元素、ガリウム(Ga)、及び、シリコン(Si)を含む第1の酸化物領域を有するゲート絶縁層と、を備え、
前記第1の酸化物領域の前記窒化物半導体層の側の端部を第1の端部、前記第1の酸化物領域の前記ゲート電極の側の端部を第2の端部、前記第1の端部と前記第2の端部との間の距離をd1、前記第1の端部から前記第2の端部の方向にd1/10だけ離間した位置を第1の位置とした場合に、前記第1の位置におけるガリウムの原子濃度が前記少なくともいずれか一方の元素の原子濃度の80%以上120%以下である半導体装置。 - 前記第1の端部から前記第2の端部の方向に9×d1/10だけ離間した位置を第2の位置とした場合に、前記第1の位置と前記第2の位置との間の任意の位置におけるガリウムの原子濃度が前記少なくともいずれか一方の元素の原子濃度の80%以上120%以下である請求項1記載の半導体装置。
- 前記第1の酸化物領域は、4個の酸素と結合する前記少なくともいずれか一方の元素を含む請求項1又は請求項2記載の半導体装置。
- 前記第1の酸化物領域は、前記少なくともいずれか一方の元素とガリウムとの複合体を含む請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記第1の酸化物領域の中の前記少なくともいずれか一方の元素の原子濃度は1×1017cm−3以上2×1020cm−3以下であり、前記第1の酸化物領域の中のガリウムの原子濃度は1×1017cm−3以上2×1020cm−3以下である請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記第1の酸化物領域の厚さは20nm以上50nm以下である請求項1ないし請求項5いずれか一項記載の半導体装置。
- 前記第1の酸化物領域は、酸化シリコン、窒素添加酸化シリコン、ハフニウムシリケート、窒素添加ハフニウムシリケート、ジルコニウムシリケート、及び、窒素添加ジルコニウムシリケートから成る群から選ばれる少なくとも一つの材料を含む請求項1ないし請求項6いずれか一項記載の半導体装置。
- 前記ゲート絶縁層は、前記第1の酸化物領域と前記窒化物半導体層との間に位置する第1の窒化物領域を有する請求項1ないし請求項7いずれか一項記載の半導体装置。
- 前記ゲート電極は、ガリウムを含む多結晶シリコン、又は、ガリウムを含む多結晶炭化珪素を有する請求項1ないし請求項8いずれか一項記載の半導体装置。
- 前記ゲート電極は、ガリウム及びボロンを含むp型の多結晶シリコン、又は、ガリウム及びボロン若しくはガリウム及びアルミニウムを含むp型の多結晶炭化珪素を有する請求項1ないし請求項8いずれか一項記載の半導体装置。
- 前記窒化物半導体層の上の前記ゲート電極と前記第2の電極との間に位置し、アルミニウム(Al)及びボロン(B)の少なくともいずれか一方の元素、ガリウム(Ga)、及び、シリコン(Si)を含む第2の酸化物領域を有する絶縁層と、
前記窒化物半導体層との間に前記絶縁層が位置し、前記ゲート電極に電気的に接続された第3の電極を、更に備え、
前記第2の酸化物領域の前記窒化物半導体層の側の端部を第3の端部、前記第2の酸化物領域の前記第3の電極の側の端部を第4の端部、前記第3の端部と前記第4の端部との間の距離をd2、前記第3の端部から前記第4の端部の方向にd2/10だけ離間した位置を第3の位置とした場合に、前記第3の位置におけるガリウムの原子濃度が前記少なくともいずれか一方の元素の原子濃度の80%以上120%以下である請求項1ないし請求項10いずれか一項記載の半導体装置。 - 前記第3の端部から前記第4の端部の方向に9×d2/10だけ離間した位置を第4の位置とした場合に、前記第3の位置と前記第4の位置との間の任意の位置におけるガリウムの原子濃度が前記少なくともいずれか一方の元素の原子濃度の80%以上120%以下である請求項11記載の半導体装置。
- 前記第3の電極は、ガリウム及びリン(P)を含むn型の多結晶シリコン、又は、ガリウム及びリン(P)若しくはガリウム及びヒ素(As)を含むn型の多結晶炭化珪素を有する請求項11又は請求項12記載の半導体装置。
- ガリウム(Ga)を含む窒化物半導体層と、
ゲート電極と、
前記窒化物半導体層と前記ゲート電極との間に位置し、アルミニウム(Al)及びボロン(B)の少なくともいずれか一方の元素、ガリウム(Ga)、及び、シリコン(Si)を含む第1の酸化物領域を有するゲート絶縁層と、を備え、
前記第1の酸化物領域の前記窒化物半導体層の側の端部を第1の端部、前記第1の酸化物領域の前記ゲート電極の側の端部を第2の端部、前記第1の端部と前記第2の端部との間の距離をd1、前記第1の端部から前記第2の端部の方向にd1/10だけ離間した位置を第1の位置とした場合に、前記第1の位置におけるガリウムの原子濃度が前記少なくともいずれか一方の元素の原子濃度の80%以上120%以下である半導体装置。 - 前記第1の端部から前記第2の端部の方向に9×d1/10だけ離間した位置を第2の位置とした場合に、前記第1の位置と前記第2の位置との間の任意の位置におけるガリウムの原子濃度が前記少なくともいずれか一方の元素の原子濃度の80%以上120%以下である請求項14記載の半導体装置。
- 前記第1の酸化物領域は、4個の酸素と結合する前記少なくともいずれか一方の元素を含む請求項14又は請求項15記載の半導体装置。
- 前記第1の酸化物領域は、前記少なくともいずれか一方の元素とガリウムとの複合体を含む請求項14ないし請求項16いずれか一項記載の半導体装置。
- 前記ゲート電極は、ガリウム及びボロンを含むp型の多結晶シリコン、又は、ガリウム及びボロンを若しくはガリウム及びアルミニウムを含むp型の多結晶炭化珪素を有する請求項14ないし請求項17いずれか一項記載の半導体装置。
- 請求項1乃至請求項18いずれか一項記載の半導体装置を備える電源回路。
- 請求項1乃至請求項18いずれか一項記載の半導体装置を備えるコンピュータ。
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