JP2009283915A5 - - Google Patents

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Publication number
JP2009283915A5
JP2009283915A5 JP2009089272A JP2009089272A JP2009283915A5 JP 2009283915 A5 JP2009283915 A5 JP 2009283915A5 JP 2009089272 A JP2009089272 A JP 2009089272A JP 2009089272 A JP2009089272 A JP 2009089272A JP 2009283915 A5 JP2009283915 A5 JP 2009283915A5
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JP
Japan
Prior art keywords
source
layer
dielectric layer
drain
semiconductor layer
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Pending
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JP2009089272A
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English (en)
Japanese (ja)
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JP2009283915A (ja
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Priority claimed from US12/118,243 external-priority patent/US9711633B2/en
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Publication of JP2009283915A publication Critical patent/JP2009283915A/ja
Publication of JP2009283915A5 publication Critical patent/JP2009283915A5/ja
Pending legal-status Critical Current

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JP2009089272A 2008-05-09 2009-04-01 浅いイオン注入された領域を含む半導体デバイスとその形成方法 Pending JP2009283915A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/118,243 US9711633B2 (en) 2008-05-09 2008-05-09 Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions

Publications (2)

Publication Number Publication Date
JP2009283915A JP2009283915A (ja) 2009-12-03
JP2009283915A5 true JP2009283915A5 (enExample) 2012-07-12

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Family Applications (1)

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JP2009089272A Pending JP2009283915A (ja) 2008-05-09 2009-04-01 浅いイオン注入された領域を含む半導体デバイスとその形成方法

Country Status (2)

Country Link
US (1) US9711633B2 (enExample)
JP (1) JP2009283915A (enExample)

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