JP2009283915A - 浅いイオン注入された領域を含む半導体デバイスとその形成方法 - Google Patents

浅いイオン注入された領域を含む半導体デバイスとその形成方法 Download PDF

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JP2009283915A
JP2009283915A JP2009089272A JP2009089272A JP2009283915A JP 2009283915 A JP2009283915 A JP 2009283915A JP 2009089272 A JP2009089272 A JP 2009089272A JP 2009089272 A JP2009089272 A JP 2009089272A JP 2009283915 A JP2009283915 A JP 2009283915A
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layer
source
dielectric layer
drain
semiconductor layer
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JP2009283915A5 (enExample
Inventor
Scott T Sheppard
ティー．シェパード スコット
R Peter Smith
スミス アール．ピーター
Wu Yifeng
イフェン ウー
Sten Heikman
ヘイクマン ステン
Matthew Jacob-Mitos
ジェイコブ−ミトス マシュー
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

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  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2009089272A 2008-05-09 2009-04-01 浅いイオン注入された領域を含む半導体デバイスとその形成方法 Pending JP2009283915A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/118,243 US9711633B2 (en) 2008-05-09 2008-05-09 Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions

Publications (2)

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JP2009283915A true JP2009283915A (ja) 2009-12-03
JP2009283915A5 JP2009283915A5 (enExample) 2012-07-12

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US (1) US9711633B2 (enExample)
JP (1) JP2009283915A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011129924A (ja) * 2009-12-17 2011-06-30 Infineon Technologies Austria Ag 金属キャリアを有する半導体デバイスおよび製造方法
JP2014072360A (ja) * 2012-09-28 2014-04-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2014183094A (ja) * 2013-03-18 2014-09-29 Fujitsu Ltd 半導体装置及び半導体装置の製造方法
JP2015513793A (ja) * 2012-02-23 2015-05-14 エピガン ナムローゼ フェンノートシャップ 改良された保護層を有しているｉｉｉ−ｎの積層を含んでいる素子および関連する製造方法
JP2015103780A (ja) * 2013-11-28 2015-06-04 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP2017028312A (ja) * 2016-10-07 2017-02-02 三菱電機株式会社 トランジスタの製造方法、増幅器の製造方法
JP2020161814A (ja) * 2019-03-25 2020-10-01 世界先進積體電路股▲ふん▼有限公司 半導体構造、高電子移動度トランジスタ、および半導体構造の製造方法
US11031464B2 (en) 2019-01-21 2021-06-08 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing semiconductor device
JP2021145050A (ja) * 2020-03-12 2021-09-24 富士通株式会社 半導体装置
CN120035169A (zh) * 2025-02-20 2025-05-23 华南师范大学 一种采用栅下ScAlN帽层的GaN HEMT及其制备方法

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US9991360B2 (en) * 2009-06-26 2018-06-05 Cornell University Method for forming III-V semiconductor structures including aluminum-silicon nitride passivation
TW201312757A (zh) * 2011-09-14 2013-03-16 Hon Hai Prec Ind Co Ltd 薄膜電晶體結構及其製造方法
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JP5825018B2 (ja) * 2011-09-29 2015-12-02 富士通株式会社 化合物半導体装置及びその製造方法
JP5998446B2 (ja) 2011-09-29 2016-09-28 富士通株式会社 化合物半導体装置及びその製造方法
TWI458092B (zh) * 2012-01-10 2014-10-21 國立交通大學 具有高電子遷移率之氮化鎵電晶體結構
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JP6054620B2 (ja) * 2012-03-29 2016-12-27 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
US10957790B2 (en) 2012-06-26 2021-03-23 Nxp Usa, Inc. Semiconductor device with selectively etched surface passivation
US9111868B2 (en) 2012-06-26 2015-08-18 Freescale Semiconductor, Inc. Semiconductor device with selectively etched surface passivation
US10522670B2 (en) 2012-06-26 2019-12-31 Nxp Usa, Inc. Semiconductor device with selectively etched surface passivation
US10825924B2 (en) 2012-06-26 2020-11-03 Nxp Usa, Inc. Semiconductor device with selectively etched surface passivation
US8946776B2 (en) 2012-06-26 2015-02-03 Freescale Semiconductor, Inc. Semiconductor device with selectively etched surface passivation
JP2014072388A (ja) * 2012-09-28 2014-04-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
US9202703B2 (en) 2012-11-05 2015-12-01 Cree, Inc. Ni-rich Schottky contact
US9425276B2 (en) * 2013-01-21 2016-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. High electron mobility transistors
US8946779B2 (en) 2013-02-26 2015-02-03 Freescale Semiconductor, Inc. MISHFET and Schottky device integration
US8969927B2 (en) 2013-03-13 2015-03-03 Cree, Inc. Gate contact for a semiconductor device and methods of fabrication thereof
US9343561B2 (en) * 2013-03-13 2016-05-17 Cree, Inc. Semiconductor device with self-aligned ohmic contacts
JP6241100B2 (ja) * 2013-07-17 2017-12-06 豊田合成株式会社 Ｍｏｓｆｅｔ
JP6197427B2 (ja) * 2013-07-17 2017-09-20 豊田合成株式会社 ショットキーバリアダイオード
US9202875B2 (en) * 2014-02-18 2015-12-01 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor with indium nitride layer
JP6149786B2 (ja) * 2014-04-11 2017-06-21 豊田合成株式会社 半導体装置および半導体装置の製造方法
JP6292104B2 (ja) * 2014-11-17 2018-03-14 三菱電機株式会社 窒化物半導体装置の製造方法
JP6627408B2 (ja) * 2015-10-21 2020-01-08 住友電気工業株式会社 半導体装置及び半導体装置の製造方法
US10170611B1 (en) * 2016-06-24 2019-01-01 Hrl Laboratories, Llc T-gate field effect transistor with non-linear channel layer and/or gate foot face
US10354879B2 (en) * 2016-06-24 2019-07-16 Cree, Inc. Depletion mode semiconductor devices including current dependent resistance
IT201700064147A1 (it) * 2017-06-09 2018-12-09 St Microelectronics Srl Transistore hemt normalmente spento con generazione selettiva del canale 2deg e relativo metodo di fabbricazione
US10651306B2 (en) 2017-08-25 2020-05-12 Hrl Laboratories, Llc Digital alloy based back barrier for P-channel nitride transistors
WO2019040083A1 (en) * 2017-08-25 2019-02-28 Hrl Laboratories, Llc DIGITAL ALLOY BASED REAR BARRIER FOR P-CHANNEL NITRIDE TRANSISTORS
CN108493245B (zh) * 2018-05-23 2024-03-26 江苏能华微电子科技发展有限公司 一种常闭型氮化镓hemt器件
CN109786256B (zh) * 2019-01-17 2021-05-04 中国电子科技集团公司第十三研究所 自对准表面沟道场效应晶体管的制备方法及功率器件
US12426336B2 (en) * 2020-01-10 2025-09-23 Mitsubishi Electric Corporation Semiconductor device, and method of manufacturing semiconductor device
JP2022025995A (ja) * 2020-07-30 2022-02-10 株式会社東芝 半導体装置
US12266721B2 (en) 2020-10-27 2025-04-01 Wolfspeed, Inc. Field effect transistor with multiple stepped field plate
US11658234B2 (en) * 2020-10-27 2023-05-23 Wolfspeed, Inc. Field effect transistor with enhanced reliability
US11502178B2 (en) 2020-10-27 2022-11-15 Wolfspeed, Inc. Field effect transistor with at least partially recessed field plate
US11749726B2 (en) 2020-10-27 2023-09-05 Wolfspeed, Inc. Field effect transistor with source-connected field plate
US12408403B2 (en) 2020-10-27 2025-09-02 Macom Technology Solutions Holdings, Inc. Field effect transistor with stacked unit subcell structure
US11791389B2 (en) 2021-01-08 2023-10-17 Wolfspeed, Inc. Radio frequency transistor amplifiers having widened and/or asymmetric source/drain regions for improved on-resistance performance
US12009417B2 (en) * 2021-05-20 2024-06-11 Macom Technology Solutions Holdings, Inc. High electron mobility transistors having improved performance
US12015075B2 (en) * 2021-05-20 2024-06-18 Macom Technology Solutions Holdings, Inc. Methods of manufacturing high electron mobility transistors having a modified interface region
US12446252B2 (en) * 2021-05-20 2025-10-14 Macom Technology Solutions Holdings, Inc. Transistors including semiconductor surface modification and related fabrication methods
US12356650B2 (en) 2021-12-31 2025-07-08 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and method for manufacturing the same
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US20240120202A1 (en) * 2022-10-06 2024-04-11 Wolfspeed, Inc. Implanted Regions for Semiconductor Structures with Deep Buried Layers
US20240194751A1 (en) * 2022-12-09 2024-06-13 Wolfspeed, Inc. Transistor devices including self-aligned ohmic contacts and contact regions and related fabrication methods
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JP2011129924A (ja) * 2009-12-17 2011-06-30 Infineon Technologies Austria Ag 金属キャリアを有する半導体デバイスおよび製造方法
US9646855B2 (en) 2009-12-17 2017-05-09 Infineon Technologies Austria Ag Semiconductor device with metal carrier and manufacturing method
US9847412B2 (en) 2012-02-23 2017-12-19 Epigan Nv Device comprising a III-N layer stack with improved passivation layer and associated manufacturing method
JP2015513793A (ja) * 2012-02-23 2015-05-14 エピガン ナムローゼ フェンノートシャップ 改良された保護層を有しているｉｉｉ−ｎの積層を含んでいる素子および関連する製造方法
JP2014072360A (ja) * 2012-09-28 2014-04-21 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2014183094A (ja) * 2013-03-18 2014-09-29 Fujitsu Ltd 半導体装置及び半導体装置の製造方法
US9496222B2 (en) 2013-03-18 2016-11-15 Fujitsu Limited Semiconductor device including insulating films with different moisture resistances and fabrication method thereof
JP2015103780A (ja) * 2013-11-28 2015-06-04 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP2017028312A (ja) * 2016-10-07 2017-02-02 三菱電機株式会社 トランジスタの製造方法、増幅器の製造方法
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JP2020161814A (ja) * 2019-03-25 2020-10-01 世界先進積體電路股▲ふん▼有限公司 半導体構造、高電子移動度トランジスタ、および半導体構造の製造方法
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JP2021145050A (ja) * 2020-03-12 2021-09-24 富士通株式会社 半導体装置
CN120035169A (zh) * 2025-02-20 2025-05-23 华南师范大学 一种采用栅下ScAlN帽层的GaN HEMT及其制备方法

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