JP5940481B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5940481B2 JP5940481B2 JP2013059322A JP2013059322A JP5940481B2 JP 5940481 B2 JP5940481 B2 JP 5940481B2 JP 2013059322 A JP2013059322 A JP 2013059322A JP 2013059322 A JP2013059322 A JP 2013059322A JP 5940481 B2 JP5940481 B2 JP 5940481B2
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- silicon nitride
- nitride film
- film
- silicon
- nitrogen
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- 239000004065 semiconductor Substances 0.000 title claims description 119
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 195
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 195
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 135
- 239000010703 silicon Substances 0.000 claims description 73
- 229910052710 silicon Inorganic materials 0.000 claims description 73
- 229910052757 nitrogen Inorganic materials 0.000 claims description 67
- 150000004767 nitrides Chemical class 0.000 claims description 56
- 239000001257 hydrogen Substances 0.000 claims description 27
- 229910052739 hydrogen Inorganic materials 0.000 claims description 27
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 26
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 73
- 238000000034 method Methods 0.000 description 53
- 230000001681 protective effect Effects 0.000 description 21
- 230000004888 barrier function Effects 0.000 description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 16
- 238000005229 chemical vapour deposition Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- 238000002294 plasma sputter deposition Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 13
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 8
- 229910021529 ammonia Inorganic materials 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 229910000077 silane Inorganic materials 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 7
- 229910052801 chlorine Inorganic materials 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 239000013067 intermediate product Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- -1 that is Chemical compound 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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Description
本実施の形態の半導体装置は、窒化物半導体層と、窒化物半導体層上に形成されるゲート電極と、窒化物半導体層上に形成されるソース電極と、窒化物半導体層上にゲート電極に対しソース電極の反対側に形成されるドレイン電極と、ドレイン電極と前記ゲート電極との間の窒化物半導体層上に形成される第1の窒化珪素膜と、窒化物半導体層とゲート電極との間に形成され、珪素の窒素に対する原子比が前記第1の窒化珪素膜よりも低い第2の窒化珪素膜と、を備えている。
本実施の形態の半導体装置の製造方法は、第1の窒化珪素膜を、プラズマ化学気相成長(PE−CVD)法を用いて形成し、第2の窒化珪素膜を、減圧化学気相成長(LPCVD)法を用いて形成すること以外は、第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については、記述を省略する。
本実施の形態の半導体装置の製造方法は、第1の窒化珪素膜を、ECR(電子サイクロトロン共鳴)プラズマスパッタ法を用いて形成し、第2の窒化珪素膜を、プラズマ化学気相成長法を用いて形成すること以外は、第1または第2の実施の形態と同様である。したがって、第1または第2の実施の形態と重複する内容については、記述を省略する。
本実施の形態の半導体装置の製造方法は、窒化物半導体層上にECRプラズマスパッタ法を用いて第1の窒化珪素膜を形成し、第1の窒化珪素膜の一部を除去し、窒化物半導体層を露出させ、窒化物半導体層上に減圧化学気相成長法を用いて第2の窒化珪素膜を形成し、第2の窒化珪素膜上にゲート電極を形成し、窒化物半導体層上にソース電極を形成し、窒化物半導体層上にゲート電極に対しソース電極の反対側にドレイン電極を形成する。第1ないし第3の実施の形態と重複する内容については、一部記述を省略する。
本実施の形態の半導体装置は、ソース電極とゲート電極との間の窒化物半導体層上に形成され、珪素の窒素に対する原子比が第1の窒化珪素膜よりも低い第3の窒化珪素膜を備えること以外は、第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については、記述を省略する。
本実施の形態の半導体装置は、ソース電極とゲート電極との間の窒化物半導体層上に形成される第3の窒化珪素膜と第2の窒化珪素膜とが、連続する同一の膜であること以外は、第5の実施の形態と同様である。したがって、第5の実施の形態と重複する内容については、記述を省略する。
本実施の形態の半導体装置は、ゲート電極の端部が表面保護膜の間の溝部に設けられること以外は、第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については、記述を省略する。
本実施の形態の半導体装置は、ソース電極と第1の窒化珪素膜、ドレイン電極と第1の窒化珪素膜との間に、第2の窒化珪素膜が介在すること以外は、第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については、記述を省略する。
11 窒化部物半導体層
12 第2の窒化珪素膜(ゲート絶縁膜)
14 ゲート電極
16 ソース電極
18 ドレイン電極
20 第1の窒化珪素膜(表面保護膜)
22 第3の窒化珪素膜
Claims (6)
- 窒化物半導体層と、
前記窒化物半導体層上に形成されるゲート電極と、
前記窒化物半導体層上に形成されるソース電極と、
前記窒化物半導体層上に前記ゲート電極に対し前記ソース電極の反対側に形成されるドレイン電極と、
前記ドレイン電極と前記ゲート電極との間の前記窒化物半導体層上に形成される第1の窒化珪素膜と、
前記窒化物半導体層と前記ゲート電極との間に形成され、珪素の窒素に対する原子比が前記第1の窒化珪素膜よりも低い第2の窒化珪素膜と、
を有し、
前記第1の窒化珪素膜の珪素の窒素に対する原子比が、0.75以上であり、
前記第2の窒化珪素膜の酸素含有量が前記第1の窒化珪素膜の酸素含有量よりも高いことを特徴とする半導体装置。 - 前記第2の窒化珪素膜の酸素含有量が、1×1019cm−3以上であることを特徴とする請求項1記載の半導体装置。
- 前記第2の窒化珪素膜の誘電率が前記第1の窒化珪素膜の誘電率よりも高いことを特徴とする請求項1又は請求項2記載の半導体装置。
- 前記第1の窒化珪素膜の水素含有量が10at%以上であることを特徴とする請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記ソース電極と前記ゲート電極との間の前記窒化物半導体層上に形成され、珪素の窒素に対する原子比が前記第1の窒化珪素膜よりも低い第3の窒化珪素膜をさらに有することを特徴とする請求項1ないし請求項4いずれか一項記載の半導体装置。
- 前記第1の窒化珪素膜が前記ソース電極と前記ゲート電極との間の前記窒化物半導体層上に形成され、
前記第2の窒化珪素膜は、前記ソース電極と前記第1の窒化珪素膜との間、及び、前記ドレイン電極と前記第1の窒化珪素膜との間に設けられていることを特徴とする請求項1ないし請求項4いずれか一項記載の半導体装置。
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JP6171435B2 (ja) * | 2013-03-18 | 2017-08-02 | 富士通株式会社 | 半導体装置及びその製造方法、電源装置、高周波増幅器 |
US9761438B1 (en) * | 2014-05-08 | 2017-09-12 | Hrl Laboratories, Llc | Method for manufacturing a semiconductor structure having a passivated III-nitride layer |
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JP6536318B2 (ja) * | 2015-09-24 | 2019-07-03 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP6642883B2 (ja) * | 2015-10-08 | 2020-02-12 | ローム株式会社 | 窒化物半導体装置およびその製造方法 |
EP3179515A1 (en) * | 2015-12-10 | 2017-06-14 | Nexperia B.V. | Semiconductor device and method of making a semiconductor device |
TWI726951B (zh) | 2015-12-17 | 2021-05-11 | 美商應用材料股份有限公司 | 處理氮化物膜之方法 |
JP6685890B2 (ja) * | 2016-12-19 | 2020-04-22 | 株式会社東芝 | 半導体装置及びその製造方法 |
CN107578988B (zh) * | 2017-09-13 | 2019-11-19 | 中国电子科技集团公司第十三研究所 | 碳化硅外延层钝化方法 |
JP7076971B2 (ja) * | 2017-09-28 | 2022-05-30 | キヤノン株式会社 | 撮像装置およびその製造方法ならびに機器 |
US20190334021A1 (en) * | 2018-02-09 | 2019-10-31 | Semiconductor Components Industries, Llc | Electronic Device Including a Conductive Layer Including a Ta Si Compound and a Process of Forming the Same |
US10763334B2 (en) | 2018-07-11 | 2020-09-01 | Cree, Inc. | Drain and/or gate interconnect and finger structure |
US10600746B2 (en) | 2018-07-19 | 2020-03-24 | Cree, Inc. | Radio frequency transistor amplifiers and other multi-cell transistors having gaps and/or isolation structures between groups of unit cell transistors |
US11316038B2 (en) | 2018-11-20 | 2022-04-26 | Stmicroelectronics S.R.L. | HEMT transistor with adjusted gate-source distance, and manufacturing method thereof |
US10937873B2 (en) * | 2019-01-03 | 2021-03-02 | Cree, Inc. | High electron mobility transistors having improved drain current drift and/or leakage current performance |
JP7367440B2 (ja) * | 2019-10-04 | 2023-10-24 | 住友電気工業株式会社 | 高電子移動度トランジスタの製造方法及び高電子移動度トランジスタ |
EP3955314A1 (en) * | 2020-08-10 | 2022-02-16 | Infineon Technologies Austria AG | Group iii nitride device |
US12015075B2 (en) * | 2021-05-20 | 2024-06-18 | Macom Technology Solutions Holdings, Inc. | Methods of manufacturing high electron mobility transistors having a modified interface region |
US12009417B2 (en) | 2021-05-20 | 2024-06-11 | Macom Technology Solutions Holdings, Inc. | High electron mobility transistors having improved performance |
CN117637835A (zh) * | 2024-01-23 | 2024-03-01 | 英诺赛科(珠海)科技有限公司 | 一种氮化镓器件及其制备方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10270664A (ja) * | 1997-03-28 | 1998-10-09 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US8823057B2 (en) * | 2006-11-06 | 2014-09-02 | Cree, Inc. | Semiconductor devices including implanted regions for providing low-resistance contact to buried layers and related devices |
JP5192683B2 (ja) * | 2006-11-17 | 2013-05-08 | 古河電気工業株式会社 | 窒化物系半導体ヘテロ接合電界効果トランジスタ |
JP5186776B2 (ja) * | 2007-02-22 | 2013-04-24 | 富士通株式会社 | 半導体装置及びその製造方法 |
JP2009267155A (ja) * | 2008-04-25 | 2009-11-12 | Sanken Electric Co Ltd | 半導体装置 |
US7985986B2 (en) * | 2008-07-31 | 2011-07-26 | Cree, Inc. | Normally-off semiconductor devices |
JP2010118556A (ja) | 2008-11-13 | 2010-05-27 | Furukawa Electric Co Ltd:The | 半導体装置および半導体装置の製造方法 |
JP2010206110A (ja) * | 2009-03-05 | 2010-09-16 | Panasonic Corp | 窒化物半導体装置 |
JP2010232610A (ja) | 2009-03-30 | 2010-10-14 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP5531434B2 (ja) * | 2009-03-31 | 2014-06-25 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP2011155116A (ja) | 2010-01-27 | 2011-08-11 | Oki Electric Industry Co Ltd | 半導体装置及びその製造方法 |
JP5185341B2 (ja) | 2010-08-19 | 2013-04-17 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2014078537A (ja) * | 2011-02-15 | 2014-05-01 | Sharp Corp | 横型半導体装置 |
JP2012248632A (ja) * | 2011-05-26 | 2012-12-13 | Advanced Power Device Research Association | 窒化物半導体装置および窒化物半導体装置の製造方法 |
JP5998446B2 (ja) * | 2011-09-29 | 2016-09-28 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
JP2013149851A (ja) * | 2012-01-20 | 2013-08-01 | Sharp Corp | 窒化物半導体装置 |
JP5717677B2 (ja) * | 2012-03-06 | 2015-05-13 | 株式会社東芝 | 半導体装置およびその製造方法 |
CN102945859A (zh) * | 2012-11-07 | 2013-02-27 | 电子科技大学 | 一种GaN异质结HEMT器件 |
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