JP7367440B2 - 高電子移動度トランジスタの製造方法及び高電子移動度トランジスタ - Google Patents
高電子移動度トランジスタの製造方法及び高電子移動度トランジスタ Download PDFInfo
- Publication number
- JP7367440B2 JP7367440B2 JP2019183876A JP2019183876A JP7367440B2 JP 7367440 B2 JP7367440 B2 JP 7367440B2 JP 2019183876 A JP2019183876 A JP 2019183876A JP 2019183876 A JP2019183876 A JP 2019183876A JP 7367440 B2 JP7367440 B2 JP 7367440B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- sin film
- layer
- temperature
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 239000004065 semiconductor Substances 0.000 claims description 100
- 230000003647 oxidation Effects 0.000 claims description 49
- 238000007254 oxidation reaction Methods 0.000 claims description 49
- 230000004888 barrier function Effects 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 30
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 18
- 150000004767 nitrides Chemical class 0.000 claims description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 15
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 13
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 13
- 239000001301 oxygen Substances 0.000 claims description 13
- 229910052760 oxygen Inorganic materials 0.000 claims description 13
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 11
- 239000002994 raw material Substances 0.000 claims description 9
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 149
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 149
- 239000000758 substrate Substances 0.000 description 24
- 238000005530 etching Methods 0.000 description 20
- 230000001681 protective effect Effects 0.000 description 15
- 229910002704 AlGaN Inorganic materials 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- 230000005533 two-dimensional electron gas Effects 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 4
- 230000005669 field effect Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 230000005264 electron capture Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 230000000087 stabilizing effect Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 238000005275 alloying Methods 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823468—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/512—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being parallel to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/0214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being a silicon oxynitride, e.g. SiON or SiON:H
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02269—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by thermal evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
- Formation Of Insulating Films (AREA)
Description
最初に、本開示の実施形態を列記して説明する。一実施形態に係るHEMTの製造方法は、窒化物半導体によって構成されバリア層を含む半導体積層の表面上に、第1SiN膜を、成膜炉の炉内温度を700℃以上900℃以下の第1の温度に設定した状態で減圧CVD法により形成する第1工程と、成膜炉内を真空引きして炉内圧力を1Pa以下とし、且つ成膜炉の炉内温度を700℃以上900℃以下の第2の温度に設定した状態で成膜炉内の水分および酸素により第1SiN膜上に界面酸化層を形成する第2工程と、第2SiN膜を、成膜炉の炉内温度を700℃以上900℃以下の第3の温度に設定した状態で減圧CVD法により界面酸化層上に形成する第3工程とを含む。
本開示のHEMTの製造方法及びHEMTの具体例を、以下に図面を参照しつつ説明する。なお、本開示はこれらの例示に限定されるものではなく、特許請求の範囲によって示され、特許請求の範囲と均等の意味及び範囲内でのすべての変更が含まれることが意図される。以下の説明では、図面の説明において同一の要素には同一の符号を付し、重複する説明を省略する。
Claims (6)
- 窒化物半導体によって構成されバリア層を含む半導体積層の表面上に、第1SiN膜を、成膜炉の炉内温度を700℃以上900℃以下の第1の温度に設定した状態で減圧CVD法により形成する第1工程と、
前記成膜炉内を真空引きして炉内圧力を1Pa以下とし、且つ前記成膜炉の炉内温度を700℃以上900℃以下の第2の温度に設定した状態で前記成膜炉内の水分および酸素により前記第1SiN膜上に界面酸化層を1nm以下の厚さに形成する第2工程と、
第2SiN膜を、前記成膜炉の炉内温度を700℃以上900℃以下の第3の温度に設定した状態で減圧CVD法により前記界面酸化層上に形成する第3工程と、
を含む、高電子移動度トランジスタの製造方法。 - 前記第2工程は、前記成膜炉内を真空引きして炉内圧力を1Pa以下とし、且つ前記成膜炉の炉内温度を700℃以上900℃以下の第2の温度に設定した状態で、少なくとも30秒間継続される、請求項1に記載の高電子移動度トランジスタの製造方法。
- 前記第1工程及び前記第3工程では、シリコン原料としてのジクロロシランガスの流量と、窒素原料としてのアンモニアガスの流量との比率を1:1に設定する、請求項1または請求項2に記載の高電子移動度トランジスタの製造方法。
- 前記第2の温度及び前記第3の温度を前記第1の温度と等しくする、請求項1から請求項3のいずれか1項に記載の高電子移動度トランジスタの製造方法。
- 窒化物半導体によって構成されバリア層を含む半導体積層と、
前記半導体積層の表面上に設けられた第1SiN膜、及び前記第1SiN膜上に設けられた第2SiN膜を含む表面保護膜とを備え、
前記表面保護膜は、前記第1SiN膜と前記第2SiN膜との間に界面酸化層を更に含み、前記界面酸化層は、5×1021cm-3を超える酸素原子、及び1×1020cm-3を超える塩素原子を含み、1nm以下の厚さを有する、高電子移動度トランジスタ。 - 前記第1SiN膜及び前記第2SiN膜は1×1020cm-3を超える塩素原子を含む、請求項5に記載の高電子移動度トランジスタ。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019183876A JP7367440B2 (ja) | 2019-10-04 | 2019-10-04 | 高電子移動度トランジスタの製造方法及び高電子移動度トランジスタ |
CN202011038645.6A CN112614783A (zh) | 2019-10-04 | 2020-09-28 | 高电子迁移率晶体管的制造方法和高电子迁移率晶体管 |
US17/036,711 US11430653B2 (en) | 2019-10-04 | 2020-09-29 | Method of manufacturing high electron mobility transistor and high electron mobility transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019183876A JP7367440B2 (ja) | 2019-10-04 | 2019-10-04 | 高電子移動度トランジスタの製造方法及び高電子移動度トランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021061298A JP2021061298A (ja) | 2021-04-15 |
JP7367440B2 true JP7367440B2 (ja) | 2023-10-24 |
Family
ID=75224926
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019183876A Active JP7367440B2 (ja) | 2019-10-04 | 2019-10-04 | 高電子移動度トランジスタの製造方法及び高電子移動度トランジスタ |
Country Status (3)
Country | Link |
---|---|
US (1) | US11430653B2 (ja) |
JP (1) | JP7367440B2 (ja) |
CN (1) | CN112614783A (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7327173B2 (ja) * | 2020-01-10 | 2023-08-16 | 住友電気工業株式会社 | 半導体装置及び半導体装置の製造方法 |
TWI815442B (zh) * | 2022-05-12 | 2023-09-11 | 環球晶圓股份有限公司 | 高電子遷移率電晶體結構及製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001168092A (ja) | 1999-01-08 | 2001-06-22 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2007189213A (ja) | 2005-12-13 | 2007-07-26 | Cree Inc | 注入領域および保護層を含む半導体デバイスおよびそれを形成する方法 |
JP2010232452A (ja) | 2009-03-27 | 2010-10-14 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
JP2014187084A (ja) | 2013-03-22 | 2014-10-02 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2015032628A (ja) | 2013-07-31 | 2015-02-16 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1252372A (en) * | 1985-01-21 | 1989-04-11 | Joseph P. Ellul | Nitsinitride and oxidized nitsinitride dielectrics on silicon |
JP2718931B2 (ja) * | 1987-09-29 | 1998-02-25 | 松下電子工業株式会社 | 半導体記憶装置の製造方法 |
US5397748A (en) * | 1991-12-28 | 1995-03-14 | Nec Corporation | Method of producing semiconductor device with insulating film having at least silicon nitride film |
EP0627763B1 (en) * | 1993-05-31 | 2004-12-15 | STMicroelectronics S.r.l. | Process for improving the adhesion between dielectric layers at their interface in semiconductor devices manufacture |
US5795833A (en) * | 1996-08-01 | 1998-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd | Method for fabricating passivation layers over metal lines |
US6177363B1 (en) * | 1998-09-29 | 2001-01-23 | Lucent Technologies Inc. | Method for forming a nitride layer suitable for use in advanced gate dielectric materials |
JP4385206B2 (ja) | 2003-01-07 | 2009-12-16 | 日本電気株式会社 | 電界効果トランジスタ |
JP4730529B2 (ja) | 2005-07-13 | 2011-07-20 | サンケン電気株式会社 | 電界効果トランジスタ |
US20070297244A1 (en) * | 2006-06-21 | 2007-12-27 | Macronix International Co., Ltd. | Top Dielectric Structures in Memory Devices and Methods for Expanding a Second Bit Operation Window |
JP2008034438A (ja) | 2006-07-26 | 2008-02-14 | Sanken Electric Co Ltd | 半導体装置 |
US7652332B2 (en) * | 2007-08-10 | 2010-01-26 | International Business Machines Corporation | Extremely-thin silicon-on-insulator transistor with raised source/drain |
KR101829281B1 (ko) * | 2011-06-29 | 2018-02-20 | 삼성전자주식회사 | 인-시츄 공정을 이용한 산화막/질화막/산화막(ono) 구조의 절연막 형성 방법 |
US9293585B2 (en) * | 2013-03-11 | 2016-03-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device structure and method of forming same |
JP6591169B2 (ja) | 2015-02-04 | 2019-10-16 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP6561366B2 (ja) * | 2016-03-16 | 2019-08-21 | 株式会社Joled | 半導体装置とその製造方法 |
JP6750455B2 (ja) * | 2016-10-28 | 2020-09-02 | 三菱電機株式会社 | 半導体装置及びその製造方法 |
JP2018157141A (ja) * | 2017-03-21 | 2018-10-04 | 株式会社東芝 | 半導体装置及び半導体装置の製造方法 |
WO2019009111A1 (ja) * | 2017-07-07 | 2019-01-10 | パナソニックIpマネジメント株式会社 | 半導体装置およびその製造方法 |
CN110120347B (zh) * | 2018-02-05 | 2023-11-17 | 住友电气工业株式会社 | 形成场效应晶体管的方法 |
US10680094B2 (en) * | 2018-08-01 | 2020-06-09 | Semiconductor Components Industries, Llc | Electronic device including a high electron mobility transistor including a gate electrode |
US11201122B2 (en) * | 2018-09-27 | 2021-12-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of fabricating semiconductor device with reduced warpage and better trench filling performance |
US10937873B2 (en) * | 2019-01-03 | 2021-03-02 | Cree, Inc. | High electron mobility transistors having improved drain current drift and/or leakage current performance |
CN111509041B (zh) * | 2020-04-17 | 2024-06-11 | 英诺赛科(珠海)科技有限公司 | 半导体器件及其制造方法 |
-
2019
- 2019-10-04 JP JP2019183876A patent/JP7367440B2/ja active Active
-
2020
- 2020-09-28 CN CN202011038645.6A patent/CN112614783A/zh active Pending
- 2020-09-29 US US17/036,711 patent/US11430653B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001168092A (ja) | 1999-01-08 | 2001-06-22 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2007189213A (ja) | 2005-12-13 | 2007-07-26 | Cree Inc | 注入領域および保護層を含む半導体デバイスおよびそれを形成する方法 |
JP2010232452A (ja) | 2009-03-27 | 2010-10-14 | Fujitsu Ltd | 化合物半導体装置及びその製造方法 |
JP2014187084A (ja) | 2013-03-22 | 2014-10-02 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2015032628A (ja) | 2013-07-31 | 2015-02-16 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2021061298A (ja) | 2021-04-15 |
CN112614783A (zh) | 2021-04-06 |
US20210104395A1 (en) | 2021-04-08 |
US11430653B2 (en) | 2022-08-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5345328B2 (ja) | 半導体装置の製造方法 | |
US7800116B2 (en) | Group III-nitride semiconductor device with a cap layer | |
TWI496284B (zh) | 化合物半導體裝置及其製造方法 | |
JP5534701B2 (ja) | 半導体装置 | |
JP5810293B2 (ja) | 窒化物半導体装置 | |
JP5126733B2 (ja) | 電界効果トランジスタ及びその製造方法 | |
WO2007007589A1 (ja) | 電界効果トランジスタおよびその製造方法 | |
US9755044B2 (en) | Method of manufacturing a transistor with oxidized cap layer | |
JP2007150106A (ja) | Iii族窒化物半導体基板 | |
JP2014045174A (ja) | 窒化物半導体装置 | |
JP5071761B2 (ja) | 窒化物半導体電界効果トランジスタ | |
JP7367440B2 (ja) | 高電子移動度トランジスタの製造方法及び高電子移動度トランジスタ | |
US20120156843A1 (en) | Dielectric layer for gallium nitride transistor | |
JPWO2014148255A1 (ja) | 窒化物半導体装置および窒化物半導体装置の製造方法 | |
WO2014003047A1 (ja) | 窒化物半導体装置の電極構造およびその製造方法並びに窒化物半導体電界効果トランジスタ | |
JP6687831B2 (ja) | 化合物半導体装置及びその製造方法 | |
US20210151325A1 (en) | Semiconductor device manufacturing method | |
JP2010251391A (ja) | 半導体装置 | |
JP2009010211A (ja) | ヘテロ接合電界効果トランジスタの製造方法 | |
US11257918B2 (en) | Semiconductor device and method of manufacturing the device | |
JP6650867B2 (ja) | ヘテロ接合電界効果型トランジスタの製造方法 | |
JP2008172085A (ja) | 窒化物半導体装置及びその製造方法 | |
JP6524888B2 (ja) | 化合物半導体装置及びその製造方法 | |
JP2018198244A (ja) | 窒化物半導体装置 | |
JP2015198210A (ja) | 半導体装置およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220321 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230425 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230428 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230526 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230912 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230925 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7367440 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |