JP5717677B2 - 半導体装置およびその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 87
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 77
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 77
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 22
- 150000004767 nitrides Chemical class 0.000 claims description 13
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 12
- 125000004429 atom Chemical group 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 6
- 229910002704 AlGaN Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 description 35
- 230000001681 protective effect Effects 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 230000001629 suppression Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009532 heart rate measurement Methods 0.000 description 1
- 238000004050 hot filament vapor deposition Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Formation Of Insulating Films (AREA)
Description
本実施の形態の半導体装置は、III−V族窒化物半導体からなる半導体層と、半導体層上に形成される第1の窒化珪素膜と、第1の窒化珪素膜上に形成されるゲート電極と、半導体層上にゲート電極を挟んで形成されるソース電極およびドレイン電極と、ソース電極とゲート電極との間、ドレイン電極とゲート電極との間に形成され、第1の窒化珪素膜よりも酸素原子密度の低い第2の窒化珪素膜と、を備えている。
図9は、本実施の形態の半導体装置の構成を示す断面図である。ゲート電極14と表面保護膜である第2の窒化珪素膜20との間に、第1の窒化珪素膜12が介在しないこと以外は第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については、記載を省略する。
図10は、本実施の形態の半導体装置の構成を示す断面図である。ゲート絶縁膜である第1の窒化珪素膜12とゲート電極14が、半導体層10の障壁層10bに設けられた溝内に形成されること以外は第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については、記載を省略する。
図11は、本実施の形態の半導体装置の構成を示す断面図である。ゲート絶縁膜である第1の窒化珪素膜12が、半導体層10と表面保護膜である第2の窒化珪素膜20との間に介在すること以外は第1の実施の形態と同様である。したがって、第1の実施の形態と重複する内容については、記載を省略する。
12 第1の窒化珪素膜
14 ゲート電極
16 ソース電極
18 ドレイン電極
20 第2の窒化珪素膜
Claims (8)
- III−V族窒化物半導体からなる半導体層と、
前記半導体層上に形成される酸素原子密度が1×1021atoms/cm3以下の第1の窒化珪素膜と、
前記第1の窒化珪素膜上に形成されるゲート電極と、
前記半導体層上に前記ゲート電極を挟んで形成されるソース電極およびドレイン電極と、
前記ソース電極とゲート電極との間、前記ドレイン電極と前記ゲート電極との間に形成され、前記第1の窒化珪素膜よりも酸素原子密度の低い第2の窒化珪素膜と、
を有することを特徴とする半導体装置。 - 前記第2の窒化珪素膜が前記半導体層に接して形成されることを特徴とする請求項1記載の半導体装置。
- 前記第2の窒化珪素膜の酸素原子密度が、前記第1の窒化珪素膜の酸素原子密度より1桁以上低いことを特徴とする請求項1または請求項2記載の半導体装置。
- 前記第1の窒化珪素膜の水素原子密度が、前記第2の窒化珪素膜の水素原子密度より1桁以上低いことを特徴とする請求項1ないし請求項3いずれか一項記載の半導体装置。
- 前記半導体層はGaNからなる動作層と、前記動作層上に形成されたAlGaN、GaN、InAlNのいずれか、または、その組み合わせにより構成される障壁層との積層構造を有することを特徴とする請求項1ないし請求項4いずれか一項記載の半導体装置。
- III−V族窒化物半導体からなる半導体層上に酸素原子密度が1×1021atoms/cm3以下の第1の窒化珪素膜を形成し、
前記第1の窒化珪素膜上にゲート電極を形成し、
前記ゲート電極の両側の前記半導体層上に前記第1の窒化珪素膜よりも酸素原子密度の低い第2の窒化珪素膜を形成することを特徴とする半導体装置の製造方法。 - 前記第2の窒化珪素膜の酸素原子密度が、前記第1の窒化珪素膜の酸素原子密度より1桁以上低いことを特徴とする請求項6記載の半導体装置の製造方法。
- 前記第1の窒化珪素膜の水素原子密度が、前記第2の窒化珪素膜の水素原子密度より1桁以上低いことを特徴とする請求項6または請求項7記載の半導体装置の製造方法。
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JP2012048899A JP5717677B2 (ja) | 2012-03-06 | 2012-03-06 | 半導体装置およびその製造方法 |
US13/655,901 US8987747B2 (en) | 2012-03-06 | 2012-10-19 | Semiconductor device with silicon nitride films having different oxygen densities |
US14/596,332 US9224818B2 (en) | 2012-03-06 | 2015-01-14 | Semiconductor device and method for manufacturing the same |
US14/597,834 US9224819B2 (en) | 2012-03-06 | 2015-01-15 | Semiconductor device and method for manufacturing the same |
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JP5940481B2 (ja) * | 2013-03-22 | 2016-06-29 | 株式会社東芝 | 半導体装置 |
WO2014185034A1 (ja) * | 2013-05-13 | 2014-11-20 | パナソニックIpマネジメント株式会社 | 半導体装置 |
JP2015056457A (ja) | 2013-09-10 | 2015-03-23 | 株式会社東芝 | 半導体装置 |
JP6301640B2 (ja) * | 2013-11-28 | 2018-03-28 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
JP2015213100A (ja) * | 2014-05-01 | 2015-11-26 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP6401053B2 (ja) * | 2014-12-26 | 2018-10-03 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
CN116960162A (zh) * | 2017-10-12 | 2023-10-27 | 应用材料公司 | 减少等离子体引起的损坏的工艺 |
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JP4439955B2 (ja) * | 2004-03-15 | 2010-03-24 | パナソニック株式会社 | 半導体装置及び半導体レーザ装置の製造方法 |
US7202504B2 (en) * | 2004-05-20 | 2007-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element and display device |
JP5348364B2 (ja) | 2007-08-27 | 2013-11-20 | サンケン電気株式会社 | ヘテロ接合型電界効果半導体装置 |
US7985986B2 (en) * | 2008-07-31 | 2011-07-26 | Cree, Inc. | Normally-off semiconductor devices |
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US9224819B2 (en) | 2015-12-29 |
US20130234152A1 (en) | 2013-09-12 |
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US20150126024A1 (en) | 2015-05-07 |
JP2013187219A (ja) | 2013-09-19 |
US9224818B2 (en) | 2015-12-29 |
US20150123143A1 (en) | 2015-05-07 |
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