JP2010097212A - 表示装置およびその作製方法 - Google Patents
表示装置およびその作製方法 Download PDFInfo
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- JP2010097212A JP2010097212A JP2009215527A JP2009215527A JP2010097212A JP 2010097212 A JP2010097212 A JP 2010097212A JP 2009215527 A JP2009215527 A JP 2009215527A JP 2009215527 A JP2009215527 A JP 2009215527A JP 2010097212 A JP2010097212 A JP 2010097212A
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- layer
- electrode
- thin film
- oxide semiconductor
- film transistor
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Images
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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Abstract
【解決手段】画素部の外側領域に設けられる共通接続部は、ゲート絶縁層と同じ層で形成された絶縁層上に、第2酸化物半導体層と同じ層で形成された酸化物半導体層と、導電層と同じ層で形成された導電層(共通電位線とも呼ぶ)とが積層された構成を有し、第1酸化物半導体層上に設けられた層間絶縁層の開口部を介して導電層(共通電位線とも呼ぶ)が共通電極と接続しており、画素電極と対向する電極が導電性粒子を介して共通電極と電気的に接続する。
【選択図】図1
Description
ここでは、第1の基板と第2の基板の間に液晶層を封入する液晶表示装置において、第2の基板に設けられた対向電極と電気的に接続するための共通接続部を第1の基板上に形成する例を示す。なお、第1の基板にはスイッチング素子として薄膜トランジスタが形成されており、共通接続部の作製工程を画素部のスイッチング素子の作製工程と共通化させることで工程を複雑にすることなく形成する。
ここでは、共通電位線として、ゲート配線と同じ材料及び同じ工程で形成される配線を用いて共通接続部を作製する例を図2(A)及び図2(B)に示す。
ここでは、共通接続部にゲート配線と同じ材料及び同じ工程で形成される電極を設け、その上に設ける共通電位線として、ソース電極層と同じ材料及び同じ工程で形成される配線を用いて共通接続部を作製する例を図3(A)及び図3(B)に示す。
本実施の形態では、図1(A)、図2(A)及び図3(A)に示す薄膜トランジスタ170、接続部、及び、端子部及びそれらの作製工程について、図4乃至図10を用いて説明する。
実施の形態1乃至3に示す薄膜トランジスタ170とは異なる構造の薄膜トランジスタ171と共通接続部を同一基板上に設ける例を図12、図13、及び図14に示す。
実施の形態1乃至5に示す薄膜トランジスタとは異なる構造の薄膜トランジスタ172と共通接続部を同一基板上に設ける例を図15(A)、図15(B)、及び図15(C)に示す。
実施の形態1乃至6に示す薄膜トランジスタとは異なる構造の薄膜トランジスタ173と共通接続部を同一基板上に設ける例を図16(A)、図16(B)、及び図16(C)に示す。
本実施の形態では、本発明の一形態の半導体装置として電子ペーパーの例を示す。
本実施の形態では、本発明の半導体装置の一例である表示装置において、同一基板上に少なくとも駆動回路の一部と、画素部に配置する薄膜トランジスタを作製する例について以下に説明する。
本発明の一形態である薄膜トランジスタを作製し、該薄膜トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製することができる。また、本発明一形態である薄膜トランジスタを駆動回路の一部または全体を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
本実施の形態では、本発明の一形態の半導体装置として発光表示装置の例を示す。表示装置の有する表示素子としては、ここではエレクトロルミネッセンスを利用する発光素子を用いて示す。エレクトロルミネッセンスを利用する発光素子は、発光材料が有機化合物であるか、無機化合物であるかによって区別され、一般的に、前者は有機EL素子、後者は無機EL素子と呼ばれている。
本発明の一形態の半導体装置は、電子ペーパーとして適用することができる。電子ペーパーは、情報を表示するものであればあらゆる分野の電子機器に用いることが可能である。例えば、電子ペーパーを用いて、電子書籍(電子ブック)、ポスター、電車などの乗り物の車内広告、クレジットカード等の各種カードにおける表示等に適用することができる。電子機器の一例を図29、図30に示す。
本発明の一形態に係る半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
101:ゲート電極
102:ゲート絶縁層
103 IGZO半導体層
104a:ソース領域
104b:ドレイン領域
105a:ソース電極層
105b:ドレイン電極層
106a:ソース領域
106b:ドレイン領域
107:保護絶縁膜
108:容量配線
110 画素電極
111a、111b:IGZO層
121:第1の端子
122:第2の端子
123 IGZO層
125:コンタクトホール
126:コンタクトホール
127:コンタクトホール
128:透明導電膜
129:透明導電膜
130:第1のIGZO膜
150:第2の端子
151:第1の端子
152:ゲート絶縁層
153:接続電極
154:保護絶縁膜
155:透明導電膜
156:電極
157:第1のIGZO膜
158:第1のIGZO膜
170〜173:薄膜トランジスタ
181:共通電位線
185:共通電位線
186:酸化物半導体層
190:共通電極
191:接続電極
580 基板
581 薄膜トランジスタ
585 絶縁層
587 電極層
588 電極層
589 球形粒子
590a 黒色領域
590b 白色領域
594 キャビティ
595 充填材
596 基板
1000 携帯電話機
1001 筐体
1002 表示部
1003 操作ボタン
1004 外部接続ポート
1005 スピーカ
1006 マイク
2600 TFT基板
2601 対向基板
2602 シール材
2603 画素部
2604 表示素子
2605 着色層
2606 偏光板
2607 偏光板
2608 配線回路部
2609 フレキシブル配線基板
2610 冷陰極管
2611 反射板
2612 回路基板
2613 拡散板
2631 ポスター
2632 車内広告
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカ
4001 基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 基板
4008 液晶層
4010 薄膜トランジスタ
4011 薄膜トランジスタ
4013 液晶素子
4015 接続端子
4016 端子電極
4018 FPC
4019 異方性導電膜
4020 絶縁層
4020 絶縁層
4021 絶縁層
4030 画素電極層
4031 対向電極層
4032 絶縁層
4033 絶縁層
4501 基板
4502 画素部
4503a、4503b 信号線駆動回路
4504a、4504b 走査線駆動回路
4505 シール材
4506 基板
4507 充填材
4509 薄膜トランジスタ
4510 薄膜トランジスタ
4511 発光素子
4512 電界発光層
4513 電極層
4515 接続端子電極
4516 端子電極
4517 電極層
4519 異方性導電膜
4520 隔壁
5300 基板
5301 画素部
5302 走査線駆動回路
5303 信号線駆動回路
5400 基板
5401 画素部
5402 走査線駆動回路
5403 信号線駆動回路
5404 走査線駆動回路
5501 第1の配線
5502 第2の配線
5503 第3の配線
5504 第4の配線
5505 第5の配線
5506 第6の配線
5543 ノード
5544 ノード
5571 第1の薄膜トランジスタ
5572 第2の薄膜トランジスタ
5573 第3の薄膜トランジスタ
5574 第4の薄膜トランジスタ
5575 第5の薄膜トランジスタ
5576 第6の薄膜トランジスタ
5577 第7の薄膜トランジスタ
5578 第8の薄膜トランジスタ
5601 ドライバIC
5602 スイッチ群
5603a 第1の薄膜トランジスタ
5603b 第2の薄膜トランジスタ
5603c 第3の薄膜トランジスタ
5611 第1の配線
5612 第2の配線
5613 第3の配線
5621_1〜5621_M 配線
5701_1〜5701_n フリップフロップ
5701_i フリップフロップ
5703a 第1の薄膜トランジスタのオン・オフのタイミング
5703b 第2の薄膜トランジスタのオン・オフのタイミング
5703c 第3の薄膜トランジスタのオン・オフのタイミング
5803a 第1の薄膜トランジスタのオン・オフのタイミング
5803b 第2の薄膜トランジスタのオン・オフのタイミング
5803c 第3の薄膜トランジスタのオン・オフのタイミング
5711 第1の配線
5712 第2の配線
5713 第3の配線
5714 第4の配線
5715 第5の配線
5716 第6の配線
5717 第7の配線
5721 信号
5821 信号
6400 画素
6401 スイッチング用トランジスタ
6402 駆動用トランジスタ
6403 容量素子
6404 発光素子
6405 信号線
6406 走査線
6407 電源線
6408 共通電極
7001 駆動用TFT
7002 発光素子
7003 陰極
7004 発光層
7005 陽極
7011 駆動用TFT
7012 発光素子
7013 陰極
7014 発光層
7015 陽極
7016 遮蔽膜
7017 導電膜
7021 駆動用TFT
7022 発光素子
7023 陰極
7024 発光層
7025 陽極
7027 導電膜
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
9700 デジタルフォトフレーム
9701 筐体
9703 表示部
9881 筐体
9882 表示部
9883 表示部
9884 スピーカ部
9885 操作キー
9886 記録媒体挿入部
9887 接続端子
9888 センサ
9889 マイクロフォン
9890 LEDランプ
9891 筐体
9893 連結部
9900 スロットマシン
9901 筐体
9903 表示部
Claims (7)
- 走査線と信号線が交差し、画素電極がマトリクス状に配列する画素部と、該画素部には、前記画素電極に対応して設けられ、第1酸化物半導体層がチャネル形成領域とされ、前記走査線と接続するゲート電極と、該ゲート電極を被覆するゲート絶縁層と、前記信号線と接続し前記第1酸化物半導体層に接し、第2酸化物半導体層と導電層が積層された第1配線層と、前記画素電極と接続し前記第1酸化物半導体層に接し、前記第1配線層と同じ積層構造を有する第2配線層とを有する薄膜トランジスタを有し、
前記画素部の外側領域に、前記ゲート絶縁層と同じ層で形成された絶縁層上に、第2酸化物半導体層と同じ層で形成された酸化物半導体層と、前記導電層と同じ層で形成された導電層とが積層され、前記第1酸化物半導体層上に設けられた層間絶縁層の開口部によって前記画素電極と対向する電極と共通電極とを電気的に接続する共通接続部と、を有することを特徴とする表示装置。 - 走査線と信号線が交差し、画素電極がマトリクス状に配列する画素部と、該画素部には、前記画素電極に対応して設けられ、第1酸化物半導体層がチャネル形成領域とされ、前記走査線と接続するゲート電極と、該ゲート電極を被覆するゲート絶縁層と、前記信号線と接続し前記第1酸化物半導体層に接し、第2酸化物半導体層と導電層が積層された第1配線層と、前記画素電極と接続し前記第1酸化物半導体層に接し、前記第1配線層と同じ積層構造を有する第2配線層とを有する薄膜トランジスタを有し、
前記画素部の外側領域に、前記ゲート電極と同じ層で形成された第1導電層と、前記ゲート絶縁層と同じ絶縁層上に、第2酸化物半導体層と同じ層で形成された酸化物半導体層と、前記導電層と同じ層で形成された第2導電層とが積層され、前記第1酸化物半導体層上に設けられた層間絶縁層の複数の開口部によって前記第1導電層及び前記第2導電層が共通電極と電気的に接続する共通接続部を有することを特徴とする表示装置。 - 請求項1又は2において、前記第1酸化物半導体層の酸素濃度は前記第2酸化物半導体層の酸素濃度よりも高いことを特徴とする表示装置。
- 請求項1又は2において、前記第1酸化物半導体層の電気伝導度は前記第2酸化物半導体層の電気伝導度よりも低いことを特徴とする表示装置。
- 請求項1又は2において、前記第1酸化物半導体層は酸素過剰型であり、前記第2酸化物半導体層は酸素欠乏型であることを特徴とする表示装置。
- 請求項1乃至5のいずれか一項において、前記第1酸化物半導体層及び前記第2酸化物半導体層は、インジウム、ガリウム、及び亜鉛を含むことを特徴とする表示装置。
- 請求項1乃至6のいずれか一項において、前記共通電極は、前記画素電極と同じ材料で形成されていることを特徴とする表示装置。
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