JP2010021581A - 高電子移動度トランジスタの製造方法 - Google Patents
高電子移動度トランジスタの製造方法 Download PDFInfo
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- JP2010021581A JP2010021581A JP2009243336A JP2009243336A JP2010021581A JP 2010021581 A JP2010021581 A JP 2010021581A JP 2009243336 A JP2009243336 A JP 2009243336A JP 2009243336 A JP2009243336 A JP 2009243336A JP 2010021581 A JP2010021581 A JP 2010021581A
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- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
Abstract
【解決手段】基板88を金属有機化学気相成長反応器80中に置く工程と、基板88上に高比抵抗のGaN層20を形成するために、原料ガスを金属有機化学気相成長反応器80の反応チャンバー82中に流す工程と、GaN層20上に、GaN層20よりも広いバンドギャップを有するAlGaNバリア半導体層18を形成するために、原料ガスを反応器チャンバー82中に流す工程と、AlGaNバリア半導体層18上に絶縁層24を形成するために原料ガスを反応器チャンバー82中に流す工程と、反応チャンバー82を冷却する工程と、堆積された層を備える基板88を前記反応チャンバー82から取り出す工程とを有する。
【選択図】図7
Description
11 基板
13 ソースコンタクト
14 ドレインコンタクト
16 ゲートコンタクト
18 バリア半導体層
20 高比抵抗半導体層
22 二次元電子ガス層
24,42 絶縁層
32,44,62,76 誘電体層
52,74 AlNスペーサー層
54,72 SiN絶縁層
80 反応器
82 反応チャンバー
86 回転軸
88 基板
90 ヒーター要素
92 キャリアガス
94 ガスライン
95a,95b,95c 流量制御器
96a,96b,96c バブラー
98a,98b,98c 定温槽
100a,100b,100c バルブ
102 ガス導入口
104 窒素含有ガス
106 流量制御器
108 バルブ
110 ガスパージライン
112 ポンプ
114 パージバルブ
116 ガス
118 流量制御器
120 バルブ
130 スパッタチャンバー
132 半導体デバイス
133 被覆
134 陽極
136 チャンバー
138 不活性ガス
140 ガスライン
142 バルブ
144 陰極
146 高電圧
148 正のイオン
150 原子
Claims (2)
- ゲート漏洩のバリアを備えた高電子移動度トランジスタの製造方法であって、
基板を金属有機化学気相成長反応器中に置く工程と、
前記基板上に高比抵抗のGaN層を形成するために、原料ガスを前記金属有機化学気相成長反応器の反応チャンバー中に流す工程と、
前記GaN層上に、該GaN層よりも広いバンドギャップを有するAlGaNバリア半導体層を形成するために、原料ガスを前記反応器チャンバー中に流す工程と、
前記AlGaNバリア半導体層上に絶縁層を形成するために原料ガスを前記反応器チャンバー中に流す工程と、
前記反応チャンバーを冷却する工程と、
堆積された層を備える前記基板を前記反応チャンバーから取り出す工程と
を有することを特徴とする高電子移動度トランジスタの製造方法。 - ゲート漏洩のバリアを備えた高電子移動度トランジスタの製造方法であって、
基板上に活性層を形成する工程と、
前記基板をスパッタチャンバー中に置く工程と、
前記スパッタチャンバーの中で前記基板上に絶縁層をスパッタする工程と、
前記スパッタチャンバーから前記基板を取り出す工程と
を有することを特徴とする高電子移動度トランジスタの製造方法。
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US10224427B2 (en) | 2019-03-05 |
AU2002357640A1 (en) | 2003-04-22 |
WO2003032397A3 (en) | 2003-08-14 |
TW552712B (en) | 2003-09-11 |
US20060138456A1 (en) | 2006-06-29 |
EP2267784B1 (en) | 2020-04-29 |
JP2005527102A (ja) | 2005-09-08 |
EP2267783A2 (en) | 2010-12-29 |
EP2267783B1 (en) | 2017-06-21 |
CN1557024A (zh) | 2004-12-22 |
US20090315078A1 (en) | 2009-12-24 |
CA2454269A1 (en) | 2003-04-17 |
US7230284B2 (en) | 2007-06-12 |
WO2003032397A2 (en) | 2003-04-17 |
EP2267784A2 (en) | 2010-12-29 |
EP2267784A3 (en) | 2011-03-23 |
EP1410444B1 (en) | 2012-08-22 |
US20070205433A1 (en) | 2007-09-06 |
KR100920434B1 (ko) | 2009-10-08 |
EP2267783A3 (en) | 2011-03-09 |
EP1410444A2 (en) | 2004-04-21 |
CN1557024B (zh) | 2010-04-07 |
KR20040018502A (ko) | 2004-03-03 |
JP2010021582A (ja) | 2010-01-28 |
CA2454269C (en) | 2015-07-07 |
US20030020092A1 (en) | 2003-01-30 |
US9419124B2 (en) | 2016-08-16 |
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