JP2009514252A5 - - Google Patents

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JP2009514252A5
JP2009514252A5 JP2008538998A JP2008538998A JP2009514252A5 JP 2009514252 A5 JP2009514252 A5 JP 2009514252A5 JP 2008538998 A JP2008538998 A JP 2008538998A JP 2008538998 A JP2008538998 A JP 2008538998A JP 2009514252 A5 JP2009514252 A5 JP 2009514252A5
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single crystal
semiconductor layer
silicon
crystal semiconductor
layer
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JP2009514252A (ja
JP5243256B2 (ja
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JP2008538998A 2005-11-01 2006-11-01 モノリシックに集積化された半導体材料およびデバイス Active JP5243256B2 (ja)

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Application Number Priority Date Filing Date Title
US73244205P 2005-11-01 2005-11-01
US60/732,442 2005-11-01
US79020406P 2006-04-07 2006-04-07
US60/790,204 2006-04-07
PCT/US2006/042654 WO2007053686A2 (en) 2005-11-01 2006-11-01 Monolithically integrated semiconductor materials and devices

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JP2009514252A JP2009514252A (ja) 2009-04-02
JP2009514252A5 true JP2009514252A5 (enExample) 2009-12-17
JP5243256B2 JP5243256B2 (ja) 2013-07-24

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US (4) US8120060B2 (enExample)
JP (1) JP5243256B2 (enExample)
KR (1) KR101316947B1 (enExample)
CN (1) CN101326646B (enExample)
WO (1) WO2007053686A2 (enExample)

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