JP2008538655A5 - - Google Patents

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Publication number
JP2008538655A5
JP2008538655A5 JP2008507818A JP2008507818A JP2008538655A5 JP 2008538655 A5 JP2008538655 A5 JP 2008538655A5 JP 2008507818 A JP2008507818 A JP 2008507818A JP 2008507818 A JP2008507818 A JP 2008507818A JP 2008538655 A5 JP2008538655 A5 JP 2008538655A5
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JP
Japan
Prior art keywords
semiconductor structure
gate dielectric
dielectric layer
metal
structure according
Prior art date
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JP2008507818A
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English (en)
Japanese (ja)
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JP2008538655A (ja
JP5159609B2 (ja
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Priority claimed from US10/907,935 external-priority patent/US7504700B2/en
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Publication of JP2008538655A publication Critical patent/JP2008538655A/ja
Publication of JP2008538655A5 publication Critical patent/JP2008538655A5/ja
Application granted granted Critical
Publication of JP5159609B2 publication Critical patent/JP5159609B2/ja
Expired - Fee Related legal-status Critical Current
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JP2008507818A 2005-04-21 2006-04-19 高性能ＣＭＯＳ用途のためのＨｆドープされた極薄の酸窒化シリコン膜及び製造方法 Expired - Fee Related JP5159609B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/907,935 2005-04-21
US10/907,935 US7504700B2 (en) 2005-04-21 2005-04-21 Method of forming an ultra-thin [[HfSiO]] metal silicate film for high performance CMOS applications and semiconductor structure formed in said method
PCT/US2006/014622 WO2006115914A1 (en) 2005-04-21 2006-04-19 Ultra-thin hf-doped silicon oxynitride film for high performance cmos applications and method of manufacture

Publications (3)

Publication Number Publication Date
JP2008538655A JP2008538655A (ja) 2008-10-30
JP2008538655A5 true JP2008538655A5 (enExample) 2009-02-19
JP5159609B2 JP5159609B2 (ja) 2013-03-06

Family

ID=37185981

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008507818A Expired - Fee Related JP5159609B2 (ja) 2005-04-21 2006-04-19 高性能ＣＭＯＳ用途のためのＨｆドープされた極薄の酸窒化シリコン膜及び製造方法

Country Status (6)

Country Link
US (1) US7504700B2 (enExample)
EP (1) EP1872409A4 (enExample)
JP (1) JP5159609B2 (enExample)
CN (1) CN100550422C (enExample)
TW (1) TW200727479A (enExample)
WO (1) WO2006115914A1 (enExample)

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