JP2008530770A5 - - Google Patents

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Publication number
JP2008530770A5
JP2008530770A5 JP2007551254A JP2007551254A JP2008530770A5 JP 2008530770 A5 JP2008530770 A5 JP 2008530770A5 JP 2007551254 A JP2007551254 A JP 2007551254A JP 2007551254 A JP2007551254 A JP 2007551254A JP 2008530770 A5 JP2008530770 A5 JP 2008530770A5
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JP
Japan
Prior art keywords
semiconductor structure
dielectric
hfsin
interface layer
source
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Application number
JP2007551254A
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English (en)
Japanese (ja)
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JP5160238B2 (ja
JP2008530770A (ja
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Priority claimed from US11/035,369 external-priority patent/US20060151846A1/en
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Publication of JP2008530770A publication Critical patent/JP2008530770A/ja
Publication of JP2008530770A5 publication Critical patent/JP2008530770A5/ja
Application granted granted Critical
Publication of JP5160238B2 publication Critical patent/JP5160238B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2007551254A 2005-01-13 2005-12-02 ｎ−ＦＥＴ用途のためのＨｆＳｉＮ金属を形成する方法 Expired - Fee Related JP5160238B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/035,369 2005-01-13
US11/035,369 US20060151846A1 (en) 2005-01-13 2005-01-13 Method of forming HfSiN metal for n-FET applications
PCT/US2005/043555 WO2006076087A2 (en) 2005-01-13 2005-12-02 METHOD OF FORMING HfSiN METAL FOR n-FET APPLICATIONS

Publications (3)

Publication Number Publication Date
JP2008530770A JP2008530770A (ja) 2008-08-07
JP2008530770A5 true JP2008530770A5 (enExample) 2008-11-06
JP5160238B2 JP5160238B2 (ja) 2013-03-13

Family

ID=36652441

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007551254A Expired - Fee Related JP5160238B2 (ja) 2005-01-13 2005-12-02 ｎ−ＦＥＴ用途のためのＨｆＳｉＮ金属を形成する方法

Country Status (7)

Country Link
US (3) US20060151846A1 (enExample)
EP (1) EP1836732B1 (enExample)
JP (1) JP5160238B2 (enExample)
CN (2) CN101789370B (enExample)
AT (1) ATE526684T1 (enExample)
TW (1) TW200636870A (enExample)
WO (1) WO2006076087A2 (enExample)

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US20060151846A1 (en) * 2005-01-13 2006-07-13 International Business Machines Corporation Method of forming HfSiN metal for n-FET applications
JP2006245461A (ja) * 2005-03-07 2006-09-14 Sony Corp 半導体装置およびその製造方法
US7301219B2 (en) * 2005-06-06 2007-11-27 Macronix International Co., Ltd. Electrically erasable programmable read only memory (EEPROM) cell and method for making the same
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US7425497B2 (en) * 2006-01-20 2008-09-16 International Business Machines Corporation Introduction of metal impurity to change workfunction of conductive electrodes
US7611979B2 (en) * 2007-02-12 2009-11-03 International Business Machines Corporation Metal gates with low charge trapping and enhanced dielectric reliability characteristics for high-k gate dielectric stacks
US7648868B2 (en) * 2007-10-31 2010-01-19 International Business Machines Corporation Metal-gated MOSFET devices having scaled gate stack thickness
EP2123789A1 (en) * 2008-05-15 2009-11-25 Eifeler Werkzeuge GmbH A method of producing hard coatings
US8350341B2 (en) 2010-04-09 2013-01-08 International Business Machines Corporation Method and structure for work function engineering in transistors including a high dielectric constant gate insulator and metal gate (HKMG)
US8633534B2 (en) * 2010-12-22 2014-01-21 Intel Corporation Transistor channel mobility using alternate gate dielectric materials
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US10446400B2 (en) * 2017-10-20 2019-10-15 Samsung Electronics Co., Ltd. Method of forming multi-threshold voltage devices and devices so formed
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US20060151846A1 (en) * 2005-01-13 2006-07-13 International Business Machines Corporation Method of forming HfSiN metal for n-FET applications

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