JP2008530769A5 - - Google Patents
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- Publication number
- JP2008530769A5 JP2008530769A5 JP2007551253A JP2007551253A JP2008530769A5 JP 2008530769 A5 JP2008530769 A5 JP 2008530769A5 JP 2007551253 A JP2007551253 A JP 2007551253A JP 2007551253 A JP2007551253 A JP 2007551253A JP 2008530769 A5 JP2008530769 A5 JP 2008530769A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor structure
- tic
- dielectric constant
- interface layer
- high dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 22
- 238000000034 method Methods 0.000 claims 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 6
- 229910052799 carbon Inorganic materials 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 5
- 239000004020 conductor Substances 0.000 claims 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 2
- 150000001345 alkine derivatives Chemical class 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 238000000059 patterning Methods 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 1
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 1
- 229910003811 SiGeC Inorganic materials 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 1
- 150000001336 alkenes Chemical class 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 150000002736 metal compounds Chemical class 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910003465 moissanite Inorganic materials 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 1
- 150000004760 silicates Chemical class 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/034,597 | 2005-01-13 | ||
| US11/034,597 US7667277B2 (en) | 2005-01-13 | 2005-01-13 | TiC as a thermally stable p-metal carbide on high k SiO2 gate stacks |
| PCT/US2005/043552 WO2006076086A2 (en) | 2005-01-13 | 2005-12-02 | Tic mos devices on high-k-dielectric gate stacks |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012108582A Division JP5511889B2 (ja) | 2005-01-13 | 2012-05-10 | ＴｉＣ膜を含む半導体構造を形成する方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008530769A JP2008530769A (ja) | 2008-08-07 |
| JP2008530769A5 true JP2008530769A5 (enExample) | 2008-10-16 |
| JP5241237B2 JP5241237B2 (ja) | 2013-07-17 |
Family
ID=36678065
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007551253A Expired - Fee Related JP5241237B2 (ja) | 2005-01-13 | 2005-12-02 | ｐＭＯＳ半導体構造 |
| JP2012108582A Expired - Fee Related JP5511889B2 (ja) | 2005-01-13 | 2012-05-10 | ＴｉＣ膜を含む半導体構造を形成する方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012108582A Expired - Fee Related JP5511889B2 (ja) | 2005-01-13 | 2012-05-10 | ＴｉＣ膜を含む半導体構造を形成する方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US7667277B2 (enExample) |
| EP (1) | EP1842240B1 (enExample) |
| JP (2) | JP5241237B2 (enExample) |
| CN (1) | CN101443918B (enExample) |
| AT (1) | ATE475195T1 (enExample) |
| DE (1) | DE602005022493D1 (enExample) |
| TW (1) | TWI374540B (enExample) |
| WO (1) | WO2006076086A2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4764030B2 (ja) * | 2005-03-03 | 2011-08-31 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US7425497B2 (en) * | 2006-01-20 | 2008-09-16 | International Business Machines Corporation | Introduction of metal impurity to change workfunction of conductive electrodes |
| US7611751B2 (en) * | 2006-11-01 | 2009-11-03 | Asm America, Inc. | Vapor deposition of metal carbide films |
| US7989902B2 (en) * | 2009-06-18 | 2011-08-02 | International Business Machines Corporation | Scavenging metal stack for a high-k gate dielectric |
| US20100327364A1 (en) * | 2009-06-29 | 2010-12-30 | Toshiba America Electronic Components, Inc. | Semiconductor device with metal gate |
| US9490179B2 (en) | 2010-05-21 | 2016-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and semiconductor device |
| AU2011262653B2 (en) * | 2010-06-09 | 2016-06-16 | Samsung Electronics Co., Ltd. | Mobile communication system and packet control method in the mobile communication system |
| CN103403903B (zh) * | 2010-10-07 | 2017-02-15 | 乔治亚州技术研究公司 | 场效应晶体管及其制造方法 |
| US8318550B2 (en) | 2011-04-08 | 2012-11-27 | Micron Technology, Inc. | Multilayer select devices and methods related thereto |
| US9269580B2 (en) * | 2011-06-27 | 2016-02-23 | Cree, Inc. | Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof |
| JP2013175593A (ja) * | 2012-02-24 | 2013-09-05 | Rohm Co Ltd | 半導体装置およびその製造方法 |
| CN103594343A (zh) * | 2012-08-13 | 2014-02-19 | 中芯国际集成电路制造(上海)有限公司 | 高k膜的制作方法及晶体管的形成方法 |
| US9679984B2 (en) * | 2012-11-07 | 2017-06-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal gate structure with multi-layer composition |
| US9312136B2 (en) | 2014-03-06 | 2016-04-12 | International Business Machines Corporation | Replacement metal gate stack for diffusion prevention |
| US9449887B2 (en) | 2014-12-08 | 2016-09-20 | Globalfoundries Inc. | Method of forming replacement gate PFET having TiALCO layer for improved NBTI performance |
| WO2016105402A1 (en) | 2014-12-23 | 2016-06-30 | Intel Corporation | Via blocking layer |
| CN110349915B (zh) * | 2019-07-12 | 2021-07-30 | 中国科学院微电子研究所 | 一种半导体器件制备方法及制备得到的半导体器件 |
| CN113025032B (zh) * | 2021-03-09 | 2022-04-15 | 电子科技大学 | 一种高介电性能自愈合聚氨酯复合材料及其制备的方法和制动应用 |
| US20230028460A1 (en) * | 2021-07-23 | 2023-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2014296C (en) * | 1989-04-21 | 2000-08-01 | Nobuo Mikoshiba | Integrated circuit |
| KR100327875B1 (ko) * | 1992-12-11 | 2002-09-05 | 인텔 코오퍼레이션 | 복합게이트전극을갖는mos트랜지스터및그제조방법 |
| US5470661A (en) * | 1993-01-07 | 1995-11-28 | International Business Machines Corporation | Diamond-like carbon films from a hydrocarbon helium plasma |
| JPH0715014A (ja) | 1993-06-18 | 1995-01-17 | Kobe Steel Ltd | Ｍｏｓ型電界効果トランジスタのゲート電極形成方法 |
| JPH0799318A (ja) * | 1993-09-28 | 1995-04-11 | Kobe Steel Ltd | ダイヤモンド薄膜電界効果トランジスタ及びその製造方法 |
| KR0147626B1 (ko) * | 1995-03-30 | 1998-11-02 | 김광호 | 타이타늄 카본 나이트라이드 게이트전극 형성방법 |
| US6388272B1 (en) * | 1996-03-07 | 2002-05-14 | Caldus Semiconductor, Inc. | W/WC/TAC ohmic and rectifying contacts on SiC |
| US6020024A (en) * | 1997-08-04 | 2000-02-01 | Motorola, Inc. | Method for forming high dielectric constant metal oxides |
| KR100424853B1 (ko) * | 1998-07-31 | 2004-03-27 | 호야 가부시키가이샤 | 포토마스크 블랭크, 포토마스크, 이들의 제조방법 및미세패턴의 형성방법 |
| JP2000208720A (ja) * | 1999-01-13 | 2000-07-28 | Lucent Technol Inc | 電子デバイス、ｍｏｍキャパシタ、ｍｏｓトランジスタ、拡散バリア層 |
| JP2001326348A (ja) * | 2000-05-16 | 2001-11-22 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
| US7374738B2 (en) * | 2001-10-11 | 2008-05-20 | Arizona Board Of Regents, Acting For And On Behalf Of, Arizona State University | Superhard dielectric compounds and methods of preparation |
| US6858500B2 (en) | 2002-01-16 | 2005-02-22 | Fuji Electric Co., Ltd. | Semiconductor device and its manufacturing method |
| JP2004186295A (ja) * | 2002-12-02 | 2004-07-02 | Semiconductor Leading Edge Technologies Inc | 半導体装置 |
| JP2004247474A (ja) * | 2003-02-13 | 2004-09-02 | Fujitsu Ltd | 半導体装置及びその製造方法並びに成膜方法 |
| JP4489368B2 (ja) * | 2003-03-24 | 2010-06-23 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
| JP3974547B2 (ja) * | 2003-03-31 | 2007-09-12 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
| US6890807B2 (en) * | 2003-05-06 | 2005-05-10 | Intel Corporation | Method for making a semiconductor device having a metal gate electrode |
| JP4229762B2 (ja) * | 2003-06-06 | 2009-02-25 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP3834564B2 (ja) * | 2003-06-13 | 2006-10-18 | シャープ株式会社 | 半導体装置及びその製造方法 |
| US7030430B2 (en) * | 2003-08-15 | 2006-04-18 | Intel Corporation | Transition metal alloys for use as a gate electrode and devices incorporating these alloys |
| US20050081781A1 (en) * | 2003-10-17 | 2005-04-21 | Taiwan Semiconductor Manufacturing Co. | Fully dry, Si recess free process for removing high k dielectric layer |
| US6974764B2 (en) * | 2003-11-06 | 2005-12-13 | Intel Corporation | Method for making a semiconductor device having a metal gate electrode |
| US6893927B1 (en) * | 2004-03-22 | 2005-05-17 | Intel Corporation | Method for making a semiconductor device with a metal gate electrode |
| US7074680B2 (en) * | 2004-09-07 | 2006-07-11 | Intel Corporation | Method for making a semiconductor device having a high-k gate dielectric |
| JP2006080354A (ja) * | 2004-09-10 | 2006-03-23 | Toshiba Corp | Ｍｉｓ型ｆｅｔの製造方法 |
| US7381608B2 (en) * | 2004-12-07 | 2008-06-03 | Intel Corporation | Method for making a semiconductor device with a high-k gate dielectric and a metal gate electrode |
-
2005
- 2005-01-13 US US11/034,597 patent/US7667277B2/en not_active Expired - Fee Related
- 2005-12-02 DE DE602005022493T patent/DE602005022493D1/de not_active Expired - Lifetime
- 2005-12-02 CN CN2005800465224A patent/CN101443918B/zh not_active Expired - Fee Related
- 2005-12-02 AT AT05826022T patent/ATE475195T1/de not_active IP Right Cessation
- 2005-12-02 JP JP2007551253A patent/JP5241237B2/ja not_active Expired - Fee Related
- 2005-12-02 WO PCT/US2005/043552 patent/WO2006076086A2/en not_active Ceased
- 2005-12-02 EP EP05826022A patent/EP1842240B1/en not_active Expired - Lifetime
-
2006
- 2006-01-04 TW TW095100287A patent/TWI374540B/zh not_active IP Right Cessation
-
2009
- 2009-08-14 US US12/541,575 patent/US8288237B2/en not_active Expired - Fee Related
-
2012
- 2012-05-10 JP JP2012108582A patent/JP5511889B2/ja not_active Expired - Fee Related
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