JP2006245461A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP2006245461A JP2006245461A JP2005061999A JP2005061999A JP2006245461A JP 2006245461 A JP2006245461 A JP 2006245461A JP 2005061999 A JP2005061999 A JP 2005061999A JP 2005061999 A JP2005061999 A JP 2005061999A JP 2006245461 A JP2006245461 A JP 2006245461A
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- film
- silicon
- gate electrode
- hafnium
- gate insulating
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 73
- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 125
- 239000010703 silicon Substances 0.000 claims abstract description 125
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 104
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 101
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 230000005669 field effect Effects 0.000 claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 121
- 238000000034 method Methods 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 150000002736 metal compounds Chemical class 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 25
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000001603 reducing effect Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 258
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
- 229910052814 silicon oxide Inorganic materials 0.000 description 21
- 230000015572 biosynthetic process Effects 0.000 description 17
- 238000002955 isolation Methods 0.000 description 16
- 238000004544 sputter deposition Methods 0.000 description 12
- 238000006722 reduction reaction Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 6
- 230000009257 reactivity Effects 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 5
- -1 tungsten nitride Chemical class 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052774 Proactinium Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 238000005477 sputtering target Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
【解決手段】半導体基板11上にゲート絶縁膜14を介してゲート電極15を備えた電界効果トランジスタからなる半導体装置1であって、前記ゲート電極15は少なくとも前記ゲート絶縁膜14側がハフニウムとシリコンとを含む膜からなるものである。
【選択図】図1
Description
Claims (6)
- 半導体基板上にゲート絶縁膜を介してゲート電極を備えた電界効果トランジスタからなる半導体装置であって、
前記ゲート電極は少なくとも前記ゲート絶縁膜側がハフニウムとシリコンとを含む膜からなる
ことを特徴とする半導体装置。 - 前記ゲート電極は、ハフニウムとシリコンとに対するシリコンの組成比が20%以上70%以下である
ことを特徴とする請求項1記載の半導体装置。 - 前記ゲート電極は、ハフニウムとシリコンとを含む金属膜からなる
ことを特徴とする請求項1記載の半導体装置。 - 前記ゲート電極は、ハフニウムとシリコンとを含む金属膜と、
前記金属膜上に形成した導電膜とからなる
ことを特徴とする請求項1記載の半導体装置。 - 前記ゲート電極は、ハフニウムとシリコンと窒素とを含む金属化合物膜からなる
ことを特徴とする請求項1記載の半導体装置。 - 半導体基板上にゲート絶縁膜を介してゲート電極を形成する工程を備えた半導体装置の製造方法であって、
前記ゲート電極を形成する工程は、少なくとも前記ゲート絶縁膜側をハフニウムとシリコンとを含む膜で形成する工程を含む
ことを特徴とする半導体装置の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005061999A JP2006245461A (ja) | 2005-03-07 | 2005-03-07 | 半導体装置およびその製造方法 |
TW095105774A TWI307960B (en) | 2005-03-07 | 2006-02-21 | Semiconductor device and method of manufacturing the same |
CNB2006100514975A CN100485967C (zh) | 2005-03-07 | 2006-02-28 | 半导体器件及其制造方法 |
US11/365,313 US7391089B2 (en) | 2005-03-07 | 2006-03-01 | Semiconductor device and method of manufacturing the same |
KR1020060020751A KR20060097605A (ko) | 2005-03-07 | 2006-03-06 | 반도체 장치 및 그 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005061999A JP2006245461A (ja) | 2005-03-07 | 2005-03-07 | 半導体装置およびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2006245461A true JP2006245461A (ja) | 2006-09-14 |
Family
ID=36943328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005061999A Pending JP2006245461A (ja) | 2005-03-07 | 2005-03-07 | 半導体装置およびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7391089B2 (ja) |
JP (1) | JP2006245461A (ja) |
KR (1) | KR20060097605A (ja) |
CN (1) | CN100485967C (ja) |
TW (1) | TWI307960B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7683439B2 (en) * | 2007-03-12 | 2010-03-23 | Freescale Semiconductor, Inc. | Semiconductor device having a metal carbide gate with an electropositive element and a method of making the same |
CN110323277B (zh) * | 2018-03-28 | 2021-01-29 | 华为技术有限公司 | 场效应晶体管及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003258121A (ja) * | 2001-12-27 | 2003-09-12 | Toshiba Corp | 半導体装置及びその製造方法 |
US20040065930A1 (en) * | 2001-10-18 | 2004-04-08 | Chartered Semiconductor Manufacturing, Ltd. | Dual metal gate process: metals and their silicides |
JP2004158593A (ja) * | 2002-11-06 | 2004-06-03 | Toshiba Corp | 絶縁ゲート型電界効果トランジスタを含む半導体装置及びその製造方法 |
JP2005005603A (ja) * | 2003-06-13 | 2005-01-06 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2005217275A (ja) * | 2004-01-30 | 2005-08-11 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2008530770A (ja) * | 2005-01-13 | 2008-08-07 | インターナショナル・ビジネス・マシーンズ・コーポレーション | n−FET用途のためのHfSiN金属を形成する方法 |
-
2005
- 2005-03-07 JP JP2005061999A patent/JP2006245461A/ja active Pending
-
2006
- 2006-02-21 TW TW095105774A patent/TWI307960B/zh active
- 2006-02-28 CN CNB2006100514975A patent/CN100485967C/zh active Active
- 2006-03-01 US US11/365,313 patent/US7391089B2/en active Active
- 2006-03-06 KR KR1020060020751A patent/KR20060097605A/ko not_active Application Discontinuation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040065930A1 (en) * | 2001-10-18 | 2004-04-08 | Chartered Semiconductor Manufacturing, Ltd. | Dual metal gate process: metals and their silicides |
JP2003258121A (ja) * | 2001-12-27 | 2003-09-12 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2004158593A (ja) * | 2002-11-06 | 2004-06-03 | Toshiba Corp | 絶縁ゲート型電界効果トランジスタを含む半導体装置及びその製造方法 |
JP2005005603A (ja) * | 2003-06-13 | 2005-01-06 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2005217275A (ja) * | 2004-01-30 | 2005-08-11 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP2008530770A (ja) * | 2005-01-13 | 2008-08-07 | インターナショナル・ビジネス・マシーンズ・コーポレーション | n−FET用途のためのHfSiN金属を形成する方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1832199A (zh) | 2006-09-13 |
CN100485967C (zh) | 2009-05-06 |
US20060197166A1 (en) | 2006-09-07 |
KR20060097605A (ko) | 2006-09-14 |
TWI307960B (en) | 2009-03-21 |
TW200637002A (en) | 2006-10-16 |
US7391089B2 (en) | 2008-06-24 |
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