JP2007324240A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 86
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 61
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 61
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 229910005883 NiSi Inorganic materials 0.000 claims abstract description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 61
- 229910052710 silicon Inorganic materials 0.000 claims description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 47
- 239000010703 silicon Substances 0.000 claims description 47
- 239000010936 titanium Substances 0.000 claims description 27
- 229910052719 titanium Inorganic materials 0.000 claims description 22
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 21
- 229910052759 nickel Inorganic materials 0.000 claims description 20
- 239000000203 mixture Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 229910005881 NiSi 2 Inorganic materials 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 6
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- CEPICIBPGDWCRU-UHFFFAOYSA-N [Si].[Hf] Chemical compound [Si].[Hf] CEPICIBPGDWCRU-UHFFFAOYSA-N 0.000 claims description 3
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- VYBYZVVRYQDCGQ-UHFFFAOYSA-N alumane;hafnium Chemical compound [AlH3].[Hf] VYBYZVVRYQDCGQ-UHFFFAOYSA-N 0.000 claims description 2
- MIQVEZFSDIJTMW-UHFFFAOYSA-N aluminum hafnium(4+) oxygen(2-) Chemical compound [O-2].[Al+3].[Hf+4] MIQVEZFSDIJTMW-UHFFFAOYSA-N 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229910004219 SiNi Inorganic materials 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract 4
- 239000010410 layer Substances 0.000 description 30
- 239000012535 impurity Substances 0.000 description 20
- 229910005889 NiSix Inorganic materials 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000004151 rapid thermal annealing Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910021334 nickel silicide Inorganic materials 0.000 description 4
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 229910021341 titanium silicide Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910008484 TiSi Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000003746 solid phase reaction Methods 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
【解決手段】 半導体基板11に形成されたp型ウェル領域13と、p型ウェル領域13上に形成された第1ゲート絶縁膜17と、第1ゲート絶縁膜17上に、NiSi2を主成分とする第1シリサイド膜18aと、導電膜18bと、NiSiを主成分とする第2シリサイド膜18cとがこの順に形成された第1ゲート電極18と、第1ソース・ドレイン領域19、20とを備えたn−MOSトランジスタ15と、p型ウェル領域13と離間して形成されたn型ウェル領域14と、n型ウェル領域14上に形成された第2ゲート絶縁膜21と、第2ゲート絶縁膜21上に形成され、NiSiを主成分とする第3シリサイド膜22aを有する第2ゲート電極22と、第2ソース・ドレイン領域23、24とを備えたp−MOSトランジスタ16とを具備する。
【選択図】 図1
Description
これは、MOSトランジスタの動作閾値電圧はゲート電極/ゲート絶縁膜界面におけるゲート電極の仕事関数(Φeff:実効仕事関数)の変化に従って変調されるためである。
一方、組成xが小さいほど仕事関数が高くなり、pチャネルMOSトランジスタに適している。
また、ゲート絶縁膜にシリコン酸化膜より誘電率の高い絶縁膜を用いる場合には、不純物を添加しても仕事関数を調節する効果が得られなくなるという問題がある。
本実施例は、nチャネルMOSトランジスタとpチャネルMOSトランジスタを有するCMOSトランジスタの場合の例である。
第1ソース領域19、第1ドレイン領域20、第2ソース領域23および第2ドレイン領域24上には、配線(図示せず)とコンタクトをとるためのシリサイド膜26、例えばニッケルシリサイドがそれぞれ形成されている。
n−MOSトランジスタ15およびp−MOSトランジスタ16は全体が保護膜27で被覆されている。
従って、第1ゲート電極18の高さと第2ゲート電極22の高さを略等しく揃えることが可能である。
始めに、図2に示すように、p型シリコン基板11にトレンチを形成し、トレンチ内部に絶縁物を埋め込んで形成したSTI12により電気的に分離されたp型ウェル領域13およびn型ウェル領域14を形成する。
シリコン酸化膜40が第1ゲート絶縁膜17および第2ゲート絶縁膜21となり、シリコン膜41が第1シリサイド膜18aおよび第3シリサイド膜22aの下部となる。
次に、フォトリソグラフィ法によりp型ウェル領域13上にレジスト膜43を形成し、レジスト膜43をマスクとしてn型ウェル領域14上のチタン膜42を、例えば過酸化水素水を用いてエッチングする。p型ウェル領域13上に残置されたチタン膜42が導電膜18bとなる。
次に、ニッケル膜61の酸化を防止するために不活性ガス雰囲気中で、例えば450℃のRTA(Rapid Thermal Annealing)法により、ニッケル(Ni)をシリコン膜44中に拡散させる。
Ni組成が大きいほど、仕事関数が高くなるので、p―MOSトランジスタのゲート電極として適する利点がある。
特に、ハフニウム系の絶縁膜上のNiSi2は、シリコン酸化膜上より仕事関数が小さくなるので、n―MOSトランジスタ15の動作閾値電圧をより下げることができる利点がある。
11 p型シリコン基板
12 STI
13 p型ウェル領域
14 n型ウェル領域
15 n―MOSトランジスタ
16 p―MOSトランジスタ
17 第1ゲート絶縁膜
18a 第1シリサイド膜
18b 導電膜
18c 第2シリサイド膜
18、46 第1ゲート電極
19 第1ソース領域
20 第1ドレイン領域
21 第2ゲート絶縁膜
22a 第3シリサイド膜
22、47 第2ゲート電極
23 第2ソース領域
24 第2ドレイン領域
25 側壁膜
26 シリサイド膜
27 保護膜
40 シリコン酸化膜
41、44 シリコン膜
42 チタン膜
43、50、52、54、56 レジスト膜
45、45a、45b シリコン窒化膜
51a、51b n型低不純物濃度層
53a、53b p型低不純物濃度層
55a、55b n型高不純物濃度層
57a、57b p型高不純物濃度層
60 TEOS膜
61 ニッケル膜
Claims (5)
- 半導体基板の主面に形成されたp型半導体層と、
前記p型半導体層上に形成された第1ゲート絶縁膜と、
前記第1ゲート絶縁膜上に、NiSi2を主成分とする第1シリサイド膜と、導電膜と、NiSiを主成分とする第2シリサイド膜とがこの順に形成された第1ゲート電極と、
前記p型半導体層に、前記第1ゲート電極をゲート長方向に挟むように形成された第1ソース領域および第1ドレイン領域と、
を具備することを特徴とする半導体装置。 - 半導体基板の主面に形成されたp型半導体層と、前記p型半導体層上に形成された第1ゲート絶縁膜と、前記第1ゲート絶縁膜上に、NiSi2を主成分とする第1シリサイド膜と、導電膜と、NiSiを主成分とする第2シリサイド膜とがこの順に形成された第1ゲート電極と、前記p型半導体層に、前記第1ゲート電極をゲート長方向に挟むように形成された第1ソース領域および第1ドレイン領域とを備えたnチャネル絶縁ゲート電界効果トランジスタと、
前記半導体基板の主面に、前記p型半導体層と離間して形成されたn型半導体層と、前記n型半導体層上に形成された第2ゲート絶縁膜と、前記第2ゲート絶縁膜上に形成され、NiSiを主成分とする第3シリサイド膜を有する第2ゲート電極と、前記n型半導体層に、前記第2ゲート電極をゲート長方向に挟むように形成された第2ソース領域および第2ドレイン領域とを備えたpチャネル絶縁ゲート電界効果トランジスタと、
を具備することを特徴とする半導体装置。 - 半導体基板の主面に、p型半導体層およびn型半導体層を離間して形成する工程と、
前記p型半導体層上に第1ゲート絶縁膜を介して第1シリコン膜と、金属膜と、第2シリコン膜をこの順に有する第1ゲート電極を形成し、前記n型半導体層上に第2ゲート絶縁膜を介して第3シリコン膜を有する第2ゲート電極を形成する工程と、
前記p型半導体層に、前記第1ゲート電極をゲート長方向に挟む第1ソース領域および第1ドレイン領域を形成し、前記n型半導体層に、前記第2ゲート電極をゲート長方向に挟む第2ソース領域および第2ドレイン領域を形成する工程と、
前記第2シリコン膜および前記第3シリコン膜上に、ニッケル膜を形成して熱処理を施し、前記第1ゲート電極を、Ni組成の小さい第1シリサイド膜と、導電膜と、Ni組成の大きい第2シリサイド膜を有する第1ゲート電極に置換し、前記第2ゲート電極を、Ni組成の大きい第3シリサイド膜を有する第2ゲート電極に置換する工程と、
を具備することを特徴とする半導体装置の製造方法。 - 前記金属膜が、チタン、タングステン、ハフニウム、ルテニウムおよびチタン、タングステン、ハフニウム、ルテニウムの少なくともいずれか2の金属の合金のいずれかであり、前記金属膜の膜厚が、3乃至10nmであることを特徴とする請求項3に記載の半導体装置の製造方法。
- 前記第1および第2ゲート絶縁膜が、シリコン酸化膜、シリコン酸窒化膜、ハフニウム酸化膜、ハフニウムシリコン酸化膜、ハフニウムシリコン酸窒化膜、ハフニウムアルミニウム酸化膜およびハフニウムアルミニウム酸窒化膜のいずれかであることを特徴とする請求項3に記載の半導体装置の製造方法。
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US8436404B2 (en) | 2009-12-30 | 2013-05-07 | Intel Corporation | Self-aligned contacts |
US20120205727A1 (en) | 2011-02-11 | 2012-08-16 | International Business Machines Corporation | Semiconductor device including multiple metal semiconductor alloy region and a gate structure covered by a continuous encapsulating layer |
US8896030B2 (en) | 2012-09-07 | 2014-11-25 | Intel Corporation | Integrated circuits with selective gate electrode recess |
CN104051338B (zh) * | 2013-03-12 | 2016-12-28 | 旺宏电子股份有限公司 | 半导体结构及其制造方法 |
US9184096B2 (en) | 2013-03-13 | 2015-11-10 | Macronix International Co., Ltd. | Semiconductor structure and manufacturing method for the same |
US9218976B2 (en) * | 2013-08-13 | 2015-12-22 | Globalfoundries Inc. | Fully silicided gate formed according to the gate-first HKMG approach |
US9236440B2 (en) * | 2013-12-05 | 2016-01-12 | Globalfoundries Inc. | Sandwich silicidation for fully silicided gate formation |
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