JP2004538634A5 - - Google Patents

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Publication number
JP2004538634A5
JP2004538634A5 JP2003519978A JP2003519978A JP2004538634A5 JP 2004538634 A5 JP2004538634 A5 JP 2004538634A5 JP 2003519978 A JP2003519978 A JP 2003519978A JP 2003519978 A JP2003519978 A JP 2003519978A JP 2004538634 A5 JP2004538634 A5 JP 2004538634A5
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strain layer
layer
compressive strain
semiconductor substrate
compressive
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JP2003519978A
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JP2004538634A (ja
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Priority claimed from PCT/US2002/024594 external-priority patent/WO2003015142A2/en
Publication of JP2004538634A publication Critical patent/JP2004538634A/ja
Publication of JP2004538634A5 publication Critical patent/JP2004538634A5/ja
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JP2003519978A 2001-08-06 2002-08-02 ひずみ層を有する半導体基板及びその形成方法 Pending JP2004538634A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31034601P 2001-08-06 2001-08-06
PCT/US2002/024594 WO2003015142A2 (en) 2001-08-06 2002-08-02 Formation of planar strained layers

Publications (2)

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JP2004538634A JP2004538634A (ja) 2004-12-24
JP2004538634A5 true JP2004538634A5 (enExample) 2005-12-22

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JP2003519978A Pending JP2004538634A (ja) 2001-08-06 2002-08-02 ひずみ層を有する半導体基板及びその形成方法

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US (3) US6730551B2 (enExample)
EP (1) EP1415331A2 (enExample)
JP (1) JP2004538634A (enExample)
WO (1) WO2003015142A2 (enExample)

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