JP2008505834A5 - - Google Patents

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Publication number
JP2008505834A5
JP2008505834A5 JP2007520461A JP2007520461A JP2008505834A5 JP 2008505834 A5 JP2008505834 A5 JP 2008505834A5 JP 2007520461 A JP2007520461 A JP 2007520461A JP 2007520461 A JP2007520461 A JP 2007520461A JP 2008505834 A5 JP2008505834 A5 JP 2008505834A5
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JP
Japan
Prior art keywords
nitride material
material region
group iii
dislocation density
iii nitride
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JP2007520461A
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English (en)
Japanese (ja)
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JP2008505834A (ja
JP5705399B2 (ja
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Priority claimed from US10/886,506 external-priority patent/US7687827B2/en
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Publication of JP2008505834A publication Critical patent/JP2008505834A/ja
Publication of JP2008505834A5 publication Critical patent/JP2008505834A5/ja
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Publication of JP5705399B2 publication Critical patent/JP5705399B2/ja
Anticipated expiration legal-status Critical
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JP2007520461A 2004-07-07 2005-07-06 転位密度の低いｉｉｉ族窒化物材料及び当該材料に関連する方法 Expired - Fee Related JP5705399B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/886,506 2004-07-07
US10/886,506 US7687827B2 (en) 2004-07-07 2004-07-07 III-nitride materials including low dislocation densities and methods associated with the same
PCT/US2005/023934 WO2006014472A1 (en) 2004-07-07 2005-07-06 Iii-nitride materials including low dislocation densities and methods associated with the same

Publications (3)

Publication Number Publication Date
JP2008505834A JP2008505834A (ja) 2008-02-28
JP2008505834A5 true JP2008505834A5 (enExample) 2008-08-14
JP5705399B2 JP5705399B2 (ja) 2015-04-22

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JP2007520461A Expired - Fee Related JP5705399B2 (ja) 2004-07-07 2005-07-06 転位密度の低いｉｉｉ族窒化物材料及び当該材料に関連する方法

Country Status (4)

Country Link
US (2) US7687827B2 (enExample)
EP (1) EP1778897B1 (enExample)
JP (1) JP5705399B2 (enExample)
WO (1) WO2006014472A1 (enExample)

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7071498B2 (en) * 2003-12-17 2006-07-04 Nitronex Corporation Gallium nitride material devices including an electrode-defining layer and methods of forming the same
US7339205B2 (en) * 2004-06-28 2008-03-04 Nitronex Corporation Gallium nitride materials and methods associated with the same
US7687827B2 (en) * 2004-07-07 2010-03-30 Nitronex Corporation III-nitride materials including low dislocation densities and methods associated with the same
WO2006050403A2 (en) * 2004-10-28 2006-05-11 Nitronex Corporation Gallium nitride/silicon based monolithic microwave integrated circuit
FI20045482A0 (fi) * 2004-12-14 2004-12-14 Optogan Oy Matalamman dislokaatiotiheyden omaava puolijohdesubstraatti, ja menetelmä sen valmistamiseksi
JP5135686B2 (ja) * 2005-03-23 2013-02-06 住友電気工業株式会社 Ｉｉｉ族窒化物半導体素子
US7365374B2 (en) * 2005-05-03 2008-04-29 Nitronex Corporation Gallium nitride material structures including substrates and methods associated with the same
US8946674B2 (en) * 2005-08-31 2015-02-03 University Of Florida Research Foundation, Inc. Group III-nitrides on Si substrates using a nanostructured interlayer
KR20080072833A (ko) * 2005-10-04 2008-08-07 니트로넥스 코오포레이션 광대역 애플리케이션을 위한 갈륨 나이트라이드 물질트랜지스터 및 방법
US9608102B2 (en) * 2005-12-02 2017-03-28 Infineon Technologies Americas Corp. Gallium nitride material devices and associated methods
US7566913B2 (en) 2005-12-02 2009-07-28 Nitronex Corporation Gallium nitride material devices including conductive regions and methods associated with the same
US8435879B2 (en) 2005-12-12 2013-05-07 Kyma Technologies, Inc. Method for making group III nitride articles
JP2007161536A (ja) * 2005-12-14 2007-06-28 Sumitomo Electric Ind Ltd ＡｌｘＧａｙＩｎ１−ｘ−ｙＮ結晶基板、半導体デバイスおよびその製造方法
US20080035143A1 (en) * 2006-08-14 2008-02-14 Sievers Robert E Human-powered dry powder inhaler and dry powder inhaler compositions
JP4282708B2 (ja) * 2006-10-20 2009-06-24 株式会社東芝 窒化物系半導体装置
US7951693B2 (en) * 2006-12-22 2011-05-31 Philips Lumileds Lighting Company, Llc III-nitride light emitting devices grown on templates to reduce strain
JP5383974B2 (ja) * 2006-12-27 2014-01-08 住友電工デバイス・イノベーション株式会社 半導体基板および半導体装置
KR101330251B1 (ko) * 2007-03-06 2013-11-15 서울바이오시스 주식회사 패터닝된 기판 상에 질화물 반도체층을 형성하는 방법 및그것을 갖는 발광 다이오드
US8362503B2 (en) * 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
US7825432B2 (en) * 2007-03-09 2010-11-02 Cree, Inc. Nitride semiconductor structures with interlayer structures
US7745848B1 (en) 2007-08-15 2010-06-29 Nitronex Corporation Gallium nitride material devices and thermal designs thereof
US8026581B2 (en) * 2008-02-05 2011-09-27 International Rectifier Corporation Gallium nitride material devices including diamond regions and methods associated with the same
US20090218589A1 (en) * 2008-03-01 2009-09-03 Goldeneye, Inc. Semiconductor die with reduced thermal boundary resistance
US8343824B2 (en) * 2008-04-29 2013-01-01 International Rectifier Corporation Gallium nitride material processing and related device structures
US8703623B2 (en) * 2009-06-01 2014-04-22 Massachusetts Institute Of Technology Fabrication technique for gallium nitride substrates
JP2011023534A (ja) 2009-07-15 2011-02-03 Sumitomo Electric Ind Ltd 窒化物系半導体発光素子
DE102009047881B4 (de) * 2009-09-30 2022-03-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer epitaktisch hergestellten Schichtstruktur
WO2011055774A1 (ja) 2009-11-06 2011-05-12 日本碍子株式会社 半導体素子用エピタキシャル基板、半導体素子、および半導体素子用エピタキシャル基板の製造方法
US8648387B2 (en) * 2009-12-30 2014-02-11 Industrial Technology Research Institute Nitride semiconductor template and method of manufacturing the same
EP2556572A1 (en) 2010-04-05 2013-02-13 The Regents of the University of California Aluminum gallium nitride barriers and separate confinement heterostructure (sch) layers for semipolar plane iii-nitride semiconductor-based light emitting diodes and laser diodes
GB2485418B (en) 2010-11-15 2014-10-01 Dandan Zhu Semiconductor materials
JP5136867B2 (ja) 2011-02-03 2013-02-06 次世代パワーデバイス技術研究組合 半導体基板、半導体装置、および半導体基板の製造方法
US20130026480A1 (en) * 2011-07-25 2013-01-31 Bridgelux, Inc. Nucleation of Aluminum Nitride on a Silicon Substrate Using an Ammonia Preflow
WO2013038980A1 (ja) * 2011-09-15 2013-03-21 シャープ株式会社 窒化物半導体層を成長させるためのバッファ層構造を有する基板
JP5139567B1 (ja) * 2011-09-22 2013-02-06 シャープ株式会社 窒化物半導体層を成長させるためのバッファ層構造を有する基板
JP5903818B2 (ja) * 2011-09-26 2016-04-13 富士通株式会社 化合物半導体装置及びその製造方法
US8698163B2 (en) 2011-09-29 2014-04-15 Toshiba Techno Center Inc. P-type doping layers for use with light emitting devices
US8664679B2 (en) 2011-09-29 2014-03-04 Toshiba Techno Center Inc. Light emitting devices having light coupling layers with recessed electrodes
US8853668B2 (en) 2011-09-29 2014-10-07 Kabushiki Kaisha Toshiba Light emitting regions for use with light emitting devices
US20130082274A1 (en) 2011-09-29 2013-04-04 Bridgelux, Inc. Light emitting devices having dislocation density maintaining buffer layers
US9012921B2 (en) 2011-09-29 2015-04-21 Kabushiki Kaisha Toshiba Light emitting devices having light coupling layers
US9178114B2 (en) 2011-09-29 2015-11-03 Manutius Ip, Inc. P-type doping layers for use with light emitting devices
JP5705179B2 (ja) * 2012-08-15 2015-04-22 株式会社東芝 窒化物半導体ウェーハ、窒化物半導体装置及び窒化物半導体結晶の成長方法
JP5881560B2 (ja) * 2012-08-30 2016-03-09 株式会社東芝 半導体発光装置及びその製造方法
KR101590309B1 (ko) * 2013-07-22 2016-01-29 엔지케이 인슐레이터 엘티디 복합 기판, 그 제조 방법, 기능 소자 및 종결정 기판
KR20150103800A (ko) * 2014-03-04 2015-09-14 전북대학교산학협력단 고효율 이종접합 전계효과 트랜지스터 및 이의 제조방법
FR3031833B1 (fr) * 2015-01-21 2018-10-05 Centre National De La Recherche Scientifique (Cnrs) Procede de fabrication d'une structure semi-conductrice a base de nitrures d'elements iii passivee et une telle structure
FR3031834B1 (fr) * 2015-01-21 2018-10-05 Centre National De La Recherche Scientifique (Cnrs) Fabrication d'un support semi-conducteur a base de nitrures d'elements iii
JP6195125B2 (ja) * 2015-02-25 2017-09-13 株式会社タムラ製作所 窒化物半導体テンプレート及びその製造方法
GB2584150B (en) 2019-05-24 2021-05-19 Plessey Semiconductors Ltd LED precursor including a passivation layer
WO2021079745A1 (ja) * 2019-10-24 2021-04-29 信越半導体株式会社 半導体基板の製造方法及び半導体基板

Family Cites Families (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4768038A (en) 1985-05-17 1988-08-30 Konishiroku Photo Industry Co., Ltd. Thermal printhead integrated circuit device
EP0307108A1 (en) 1987-08-24 1989-03-15 Canon Kabushiki Kaisha Method of forming crystal
US5290393A (en) 1991-01-31 1994-03-01 Nichia Kagaku Kogyo K.K. Crystal growth method for gallium nitride-based compound semiconductor
US5633192A (en) 1991-03-18 1997-05-27 Boston University Method for epitaxially growing gallium nitride layers
US5192987A (en) 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
JP3352712B2 (ja) 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
US5393993A (en) 1993-12-13 1995-02-28 Cree Research, Inc. Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices
US5679152A (en) 1994-01-27 1997-10-21 Advanced Technology Materials, Inc. Method of making a single crystals Ga*N article
US6440823B1 (en) * 1994-01-27 2002-08-27 Advanced Technology Materials, Inc. Low defect density (Ga, Al, In)N and HVPE process for making same
US5838029A (en) 1994-08-22 1998-11-17 Rohm Co., Ltd. GaN-type light emitting device formed on a silicon substrate
US5592501A (en) 1994-09-20 1997-01-07 Cree Research, Inc. Low-strain laser structures with group III nitride active layers
US5523589A (en) 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
US5777350A (en) 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
EP0749638B1 (en) 1994-12-22 1999-06-16 Koninklijke Philips Electronics N.V. Semiconductor memory devices and methods of producing such
US5679965A (en) 1995-03-29 1997-10-21 North Carolina State University Integrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating same
US5739554A (en) 1995-05-08 1998-04-14 Cree Research, Inc. Double heterojunction light emitting diode with gallium nitride active layer
WO1996041906A1 (en) 1995-06-13 1996-12-27 Advanced Technology Materials, Inc. Bulk single crystal gallium nitride and method of making same
JP2795226B2 (ja) 1995-07-27 1998-09-10 日本電気株式会社 半導体発光素子及びその製造方法
DE69633203T2 (de) 1995-09-18 2005-09-01 Hitachi, Ltd. Halbleiterlaservorrichtungen
JPH09134878A (ja) 1995-11-10 1997-05-20 Matsushita Electron Corp 窒化ガリウム系化合物半導体の製造方法
JP3396356B2 (ja) 1995-12-11 2003-04-14 三菱電機株式会社 半導体装置，及びその製造方法
JP3409958B2 (ja) 1995-12-15 2003-05-26 株式会社東芝 半導体発光素子
US5874747A (en) 1996-02-05 1999-02-23 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same
US5929467A (en) 1996-12-04 1999-07-27 Sony Corporation Field effect transistor with nitride compound
US5741724A (en) 1996-12-27 1998-04-21 Motorola Method of growing gallium nitride on a spinel substrate
KR19980079320A (ko) 1997-03-24 1998-11-25 기다오까다까시 고품질 쥐에이엔계층의 선택성장방법, 고품질 쥐에이엔계층 성장기판 및 고품질 쥐에이엔계층 성장기판상에 제작하는 반도체디바이스
JP3491492B2 (ja) 1997-04-09 2004-01-26 松下電器産業株式会社 窒化ガリウム結晶の製造方法
EP0942459B1 (en) 1997-04-11 2012-03-21 Nichia Corporation Method of growing nitride semiconductors
US6069021A (en) 1997-05-14 2000-05-30 Showa Denko K.K. Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
JPH10335637A (ja) 1997-05-30 1998-12-18 Sony Corp ヘテロ接合電界効果トランジスタ
US6261931B1 (en) 1997-06-20 2001-07-17 The Regents Of The University Of California High quality, semi-insulating gallium nitride and method and system for forming same
US6146457A (en) 1997-07-03 2000-11-14 Cbl Technologies, Inc. Thermal mismatch compensation to produce free standing substrates by epitaxial deposition
US6201262B1 (en) 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
JP3517867B2 (ja) 1997-10-10 2004-04-12 豊田合成株式会社 ＧａＮ系の半導体素子
JP3036495B2 (ja) 1997-11-07 2000-04-24 豊田合成株式会社 窒化ガリウム系化合物半導体の製造方法
JP4301592B2 (ja) * 1998-01-16 2009-07-22 三菱マテリアル株式会社 窒化物半導体層付き基板の製造方法
US6051849A (en) 1998-02-27 2000-04-18 North Carolina State University Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer
US6180270B1 (en) 1998-04-24 2001-01-30 The United States Of America As Represented By The Secretary Of The Army Low defect density gallium nitride epilayer and method of preparing the same
US6064078A (en) 1998-05-22 2000-05-16 Xerox Corporation Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities
US6218207B1 (en) 1998-05-29 2001-04-17 Mitsushita Electronics Corporation Method for growing nitride semiconductor crystals, nitride semiconductor device, and method for fabricating the same
US6265289B1 (en) 1998-06-10 2001-07-24 North Carolina State University Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
US6316793B1 (en) 1998-06-12 2001-11-13 Cree, Inc. Nitride based transistors on semi-insulating silicon carbide substrates
SG94712A1 (en) * 1998-09-15 2003-03-18 Univ Singapore Method of fabricating group-iii nitride-based semiconductor device
US6255198B1 (en) 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6177688B1 (en) 1998-11-24 2001-01-23 North Carolina State University Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates
US6329063B2 (en) 1998-12-11 2001-12-11 Nova Crystals, Inc. Method for producing high quality heteroepitaxial growth using stress engineering and innovative substrates
US6328796B1 (en) 1999-02-01 2001-12-11 The United States Of America As Represented By The Secretary Of The Navy Single-crystal material on non-single-crystalline substrate
US20010042503A1 (en) 1999-02-10 2001-11-22 Lo Yu-Hwa Method for design of epitaxial layer and substrate structures for high-quality epitaxial growth on lattice-mismatched substrates
TW449937B (en) 1999-02-26 2001-08-11 Matsushita Electronics Corp Semiconductor device and the manufacturing method thereof
US6426512B1 (en) 1999-03-05 2002-07-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device
EP1209729A1 (en) 1999-07-07 2002-05-29 Matsushita Electric Industrial Co., Ltd. Multilayered body, method for fabricating multilayered body, and semiconductor device
TW474024B (en) 1999-08-16 2002-01-21 Cornell Res Foundation Inc Passivation of GaN based FETs
US6521514B1 (en) 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
US6441393B2 (en) 1999-11-17 2002-08-27 Lumileds Lighting U.S., Llc Semiconductor devices with selectively doped III-V nitride layers
US6291319B1 (en) 1999-12-17 2001-09-18 Motorola, Inc. Method for fabricating a semiconductor structure having a stable crystalline interface with silicon
US6380108B1 (en) 1999-12-21 2002-04-30 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated thereby
US6586781B2 (en) 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
US6403451B1 (en) 2000-02-09 2002-06-11 Noerh Carolina State University Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts
US6261929B1 (en) 2000-02-24 2001-07-17 North Carolina State University Methods of forming a plurality of semiconductor layers using spaced trench arrays
US6498111B1 (en) 2000-08-23 2002-12-24 Cree Lighting Company Fabrication of semiconductor materials and devices with controlled electrical conductivity
AU2001274810A1 (en) 2000-04-17 2001-10-30 Virginia Commonwealth University Defect reduction in gan and related materials
FR2810159B1 (fr) 2000-06-09 2005-04-08 Centre Nat Rech Scient Couche epaisse de nitrure de gallium ou de nitrure mixte de gallium et d'un autre metal, procede de preparation, et dispositif electronique ou optoelectronique comprenant une telle couche
JP4186032B2 (ja) 2000-06-29 2008-11-26 日本電気株式会社 半導体装置
US6610144B2 (en) 2000-07-21 2003-08-26 The Regents Of The University Of California Method to reduce the dislocation density in group III-nitride films
US6624452B2 (en) 2000-07-28 2003-09-23 The Regents Of The University Of California Gallium nitride-based HFET and a method for fabricating a gallium nitride-based HFET
AU2001279163A1 (en) 2000-08-04 2002-02-18 The Regents Of The University Of California Method of controlling stress in gallium nitride films deposited on substrates
JP2002076023A (ja) 2000-09-01 2002-03-15 Nec Corp 半導体装置
US6391748B1 (en) 2000-10-03 2002-05-21 Texas Tech University Method of epitaxial growth of high quality nitride layers on silicon substrates
US6583034B2 (en) 2000-11-22 2003-06-24 Motorola, Inc. Semiconductor structure including a compliant substrate having a graded monocrystalline layer and methods for fabricating the structure and semiconductor devices including the structure
US6548333B2 (en) 2000-12-01 2003-04-15 Cree, Inc. Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment
US6649287B2 (en) * 2000-12-14 2003-11-18 Nitronex Corporation Gallium nitride materials and methods
JP2002274996A (ja) * 2001-01-15 2002-09-25 Ngk Insulators Ltd エピタキシャル下地基板及びエピタキシャル基板
US6497763B2 (en) 2001-01-19 2002-12-24 The United States Of America As Represented By The Secretary Of The Navy Electronic device with composite substrate
US6461944B2 (en) 2001-02-07 2002-10-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Methods for growth of relatively large step-free SiC crystal surfaces
US6956250B2 (en) 2001-02-23 2005-10-18 Nitronex Corporation Gallium nitride materials including thermally conductive regions
US6611002B2 (en) 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
US7233028B2 (en) 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
US6849882B2 (en) 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
PL219109B1 (pl) 2001-06-06 2015-03-31 Ammono Spółka Z Ograniczoną Odpowiedzialnością Sposób otrzymywania objętościowego monokrystalicznego azotku zawierającego gal oraz urządzenie do otrzymywania objętościowego monokrystalicznego azotku zawierającego gal
US6841409B2 (en) 2002-01-17 2005-01-11 Matsushita Electric Industrial Co., Ltd. Group III-V compound semiconductor and group III-V compound semiconductor device using the same
EP1814166A1 (en) * 2002-05-15 2007-08-01 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting element and production method therefor
US6991972B2 (en) 2002-10-22 2006-01-31 Amberwave Systems Corporation Gate material for semiconductor device fabrication
US7524691B2 (en) 2003-01-20 2009-04-28 Panasonic Corporation Method of manufacturing group III nitride substrate
JP4422473B2 (ja) * 2003-01-20 2010-02-24 パナソニック株式会社 Ｉｉｉ族窒化物基板の製造方法
US20050006639A1 (en) * 2003-05-23 2005-01-13 Dupuis Russell D. Semiconductor electronic devices and methods
US7309534B2 (en) 2003-05-29 2007-12-18 Matsushita Electric Industrial Co., Ltd. Group III nitride crystals usable as group III nitride substrate, method of manufacturing the same, and semiconductor device including the same
JP4768975B2 (ja) * 2003-08-29 2011-09-07 パナソニック株式会社 ＧａＮ結晶およびＧａＮ結晶基板の製造方法
US7154163B2 (en) 2004-05-05 2006-12-26 Supernova Optoelectronics Corp. Epitaxial structure of gallium nitride series semiconductor device utilizing two buffer layers
US7339205B2 (en) 2004-06-28 2008-03-04 Nitronex Corporation Gallium nitride materials and methods associated with the same
US7687827B2 (en) * 2004-07-07 2010-03-30 Nitronex Corporation III-nitride materials including low dislocation densities and methods associated with the same

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